Class 257/E21.137 - To control carrier lifetime, i.e., deep level dopant (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.135. This subclass
No. of patents: 36
Last issue date: 12/04/2007

Number	Title	Issue Date
7303967	Method for fabricating transistor of semiconductor device Disclosed is a method for fabricating a transistor of a semiconductor device, the method comprising the steps of: providing a semiconductor; forming a gate electrode; performing a low-density ion implantation process with respect to the substrate, thereby forming an...	12/04/2007
7229886	Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein A method of forming an integrated circuit configured to accommodate higher voltage and low voltage devices. In one embodiment, the method of forming the integrated circuit includes forming a switch on a semiconductor substrate, and forming a driver switch of a drive...	06/12/2007
7217977	Covert transformation of transistor properties as a circuit protection method A technique for and structures for camouflaging an integrated circuit structure. The technique includes the use of a light density dopant (LDD) region of opposite type from the active regions resulting in a transistor that is always off when standard voltages are ap...	05/15/2007
7195981	Method of forming an integrated circuit employable with a power converter A method of forming an integrated circuit employable with a power converter. In one embodiment, the method of forming the integrated circuit includes forming a power switch of a power train of the power converter on a semiconductor substrate, and forming a driver sw...	03/27/2007
6624049	Semiconductor device and method of manufacturing the same Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphe...	09/23/2003
6168981	Method and apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th...	01/02/2001
6133119	Photoelectric conversion device and method manufacturing same Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state. In this state, a heat treatment is conducted in an atmosphe...	10/17/2000
6093955	Power semiconductor device A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has an gold ion implant in a region of the device between two of or the two p-n junctions, which region is the base in the case of...	07/25/2000
5900652	Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in th...	05/04/1999
5747872	Fast power diode A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incor...	05/05/1998
5629555	Integrated structure bipolar transistors with controlled storage time Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an...	05/13/1997
5624852	Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time Integrated structure bipolar transistors with controlled storage time are manufactured by forming at least one bipolar transistor occupying a first area on a first surface of the silicon material, covering the first surface of the silicon material with an...	04/29/1997
5528058	IGBT device with platinum lifetime control and reduced gaw For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (~1014 /cm3	06/18/1996
5468660	Process for manufacturing an integrated bipolar power device and a fast diode A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable...	11/21/1995
5371040	Method for manufacturing semiconductor components with short switching time A method is described for manufacturing semiconductor components with short switching time, having a weakly doped semiconductor area in contact with a PN junction. In order to obtain an inhomogeneous impurity distribution in the axial direction of the sem...	12/06/1994
5342805	Method of growing a semiconductor material by epilaxy This invention concerns itself with an improved method of producing sharply defined misfit dislocations; (MD) with a new, inexpensive method of doping these misfit dislocations with Au; with invention that a combination of Au and Pt doping in misfit dislo...	08/30/1994
5343068	Integrated bipolar power device and a fast diode A bipolar power device and a fast diode are formed in a single chip of semiconductor material. The chip contains a first area having high minority carrier lifetimes in which the bipolar power device is formed. The bipolar power device is therefore capable...	08/30/1994
5300453	Method for producing semiconductor device A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer b...	04/05/1994
5284780	Method for increasing the electric strength of a multi-layer semiconductor component For increasing the electric strength of a semiconductor component that comprises a sequence of semiconductor layers of alternating conductivity type and which is adapted to be charged with a voltage that biases at least one of the p-n junctions that separ...	02/08/1994
5283202	IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (~1014 /cm3	02/01/1994
5227315	Process of introduction and diffusion of platinum ions in a slice of silicon A process is provided for introduction and diffusion of platinum ions in a slice of silicon material. The slice of silicon is subjected to a succession of thermal steps at high temperature for the formation of at least one semiconductor device. Later proc...	07/13/1993
5151766	Semiconductor component In order to improve overall the trade-off between forward voltage drop and turn-off time, in a doped zone an axially limited region is provided with recombination centers. The recombination centers form a trap density profile varying periodically in one o...	09/29/1992
5032540	A Process for modulating the quantity of gold diffused into a silicon substrate For modulating the quantity of gold diffused in a silicon substrate, prior to gold diffusion, one realizes a diffusion of phosphorus varying within a 1013 to 1015 atoms/cm3 range. The concentration of phosphorous is increa...	07/16/1991
4963509	Gold diffusion method for semiconductor devices of high switching speed Gold is diffused into a silicon substrate by first depositing an ultrathin layer of gold on one of the main faces of the substrate and then by heating the substrate to a temperature range of about 300°-850° C., instead of to about 1000° according to ...	10/16/1990
4925812	Platinum diffusion process Platinum atoms are uniformly dispersed throughout a silicon wafer containing preformed junctions by depositing a layer of platinum on a clean silicon surface and thereafter immediately heating the wafer to about 500° C. to form platinum silicide. Alterna...	05/15/1990
4855799	Power MOS FET with carrier lifetime killer In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the...	08/08/1989
4717588	Metal redistribution by rapid thermal processing A method for diffusing a metal dopant into a semiconductor switching device is provided by the use of a rapid thermal heating apparatus. This method provides a procedure for the selectively placing of a metal dopant in a region of the device or circuit. T...	01/05/1988
4370180	Method for manufacturing power switching devices A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conduct...	01/25/1983
4290188	Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion A process for manufacturing a bipolar semiconductor device. An epitaxial layer is formed on a silicon wafer, and a base layer is formed by the diffusion of impurities having one conductivity type in a part of the epitaxial layer. Impurities having the opp...	09/22/1981
4236948	Process for doping semiconductor crystals Semiconductor crystals, especially silicon semiconductor crystals, are doped using a solution to which there are added a silicon dioxide film forming material, a p or n doping material and organic solvent, by applying this solution to the surface of the s...	12/02/1980
4203780	Fe Ion implantation into semiconductor substrate for reduced lifetime sensitivity to temperature A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 10...	05/20/1980
4140560	Process for manufacture of fast recovery diodes A high speed or fast recovery diode having soft turn-off characteristics has gold atoms diffused in a silicon wafer to reduce minority carrier lifetime. The gold atom density gradient is relatively high across the thickness of the wafer. A novel process i...	02/20/1979
4077819	Technique for passivating semiconductor devices The specification discloses a technique for passivating a semiconductor device which includes exposing a P-N junction in a multilayered semiconductor body. A mixture of glass and gold is prepared and applied to the exposed P-N junction. A mixture is fired...	03/07/1978
4066484	Method of manufacture of a gold diffused thyristor Disclosed is a thyristor and a method for the manufacture thereof. An auxiliary dopant, such as gold, is diffused into the cathode emitter region and the area immediately therearound. The auxiliary dopant is selected from among those known to stimulate ch...	01/03/1978
4007476	Technique for passivating semiconductor devices The specification discloses a technique for passivating a semiconductor device which includes exposing a P-N junction in a multilayered semiconductor body. A mixture of glass and gold is prepared and applied to the exposed P-N junction. A mixture is fired...	02/08/1977
3953243	Method for setting the lifetime of charge carriers in semiconductor bodies A method of setting the lifetime of charge carriers in a semiconductor body by the formation of recombination centers in the semiconductor body. The quantity of the recombination centers forming material necessary to provide the desired concentration in t...	04/27/1976

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Class 257/E21.137 - To control carrier lifetime, i.e., deep level dopant (EPO)