Did You Know...
...that one person who claimed to be the inventor of the television is Russian emigre Vladimir Zworykin? In 1929 David Sarnoff, founder of RCA, asked Zworykin what it would take to develop TV for commercial use. He said: a year and a half and $100,000. In reality, it took 20 years and $50 million! Before his death in 1982 at the age of 92, Zworykin said of his invention: "The technique is wonderful. It is beyond my expectations. But the programs! I would never let my children even come close to this thing."
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| Number | Title | Issue Date |
| 7442625 | Apparatus for annealing, method for annealing, and method for manufacturing a semiconductor device An apparatus for annealing a substrate includes a substrate stage having a substrate mounting portion configured to mount the substrate; a heat source having a plurality of heaters disposed under the substrate mounting portion, the heaters individually preheating a ... | 10/28/2008 |
| 7442592 | Manufacturing a semiconductor device A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film i... | 10/28/2008 |
| 7439114 | Laser anneal method of a semiconductor layer For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at ... | 10/21/2008 |
| 7439107 | Laser irradiation apparatus, method of irradiating laser light, and method of manufacturing a semiconductor device When the laser light is irradiated with high output in the manufacturing process for a semiconductor device, an attenuator is heated and cause a deformation due to the laser light scattered in the attenuator. As a result, the attenuation ratio of the attenuator fluc... | 10/21/2008 |
| 7432176 | Method of three-dimensional microfabrication and high-density three-dimentional fine structure Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0≦x | 10/07/2008 |
| 7423286 | Laser transfer article and method of making The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystal... | 09/09/2008 |
| 7419860 | Method of fabricating a semiconductor thin film A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semicondu... | 09/02/2008 |
| 7410839 | Thin film transistor and manufacturing method thereof The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semiconductor device which realizes ... | 08/12/2008 |
| 7407848 | Methods of manufacturing semiconductor thin film, electronic device and liquid crystal display device A semiconductor thin film manufacturing method includes: forming a semiconductor thin film on a substrate; forming a transcriptional body containing a metal element on a part thereof; bringing a part of the transcriptional body into contact with the semiconductor th... | 08/05/2008 |
| 7405464 | Array substrate, method of manufacturing the same and method of crystallizing silicon An array substrate includes a base substrate, a switching element, and a pixel electrode. The switching element is on the base substrate. The switching element includes a poly silicon pattern having at least one block. Grains are formed in each of the at least one b... | 07/29/2008 |
| 7402471 | Semiconductor device and method for manufacturing the same A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal ... | 07/22/2008 |
| 7396761 | Semiconductor device and method of manufacturing the same In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewa... | 07/08/2008 |
| 7393764 | Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device The invention relates to a laser treatment apparatus including a laser oscillator, an interlock provided in the laser oscillator, a movable table which moves with a certain movement period, a timer, an interlock provided in the timer, a sensor which can detect movem... | 07/01/2008 |
| 7387954 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irr... | 06/17/2008 |
| 7384810 | Image display device and method for manufacturing the same Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-cr... | 06/10/2008 |
| 7375010 | Laser irradiation device In annealing a non-single crystal silicon film through the use of a linear laser beam emitted by a YAG laser of a light source, it is the object of the present invention to prevent heterogeneity in energy caused by an optical interference produced in the linear lase... | 05/20/2008 |
| 7374955 | Method of manufacturing silicon wafer The present invention provides a method of manufacturing a silicon wafer where a defect does not exist at a wafer surface layer part on which a device is formed, without affecting productivity and production costs of the wafer. An ingot of a silicon single cr... | 05/20/2008 |
| 7365406 | Non-uniform ion implantation apparatus and method thereof A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predete... | 04/29/2008 |
| 7364992 | Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method A method of forming a polycrystalline silicon thin film with improved electrical characteristics and a method of manufacturing a thin film transistor using the method of forming the polycrystalline silicon thin film. The method includes forming an amorphous silicon ... | 04/29/2008 |
| 7358165 | Semiconductor device and method for manufacturing semiconductor device A crystallizing method that can control the orientation of crystal grains with the use of a metal element for promoting crystallization. In the method, the metal element for promoting crystallization is added to selectively form a crystalline semiconductor film, and... | 04/15/2008 |
| 7354810 | Method of and apparatus for manufacturing semiconductor thin film, and method of manufacturing thin film transistor A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is m... | 04/08/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7345002 | Replication and transfer of microstructures and nanostructures A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto a receiving substrate using one of a variety of printing or imprint t... | 03/18/2008 |
| 7344933 | Method of forming device having a raised extension region A method is disclosed of forming an extension region for a transistor having a gate structure overlying a compound semiconductor layer. An anneal is used either before or after deep source/drain implantation to diffuse a dopant from a raised region adjacent the gate... | 03/18/2008 |
| 7341928 | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predeterm... | 03/11/2008 |
| 7335539 | Method for making thin-film semiconductor device A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is co... | 02/26/2008 |
| 7317257 | Inhibiting underfill flow using nanoparticles A method and apparatus for inhibiting the flow of a flowable adhesive material disposed adjacent to a substrate. A chip component is disposed adjacent to a substrate and a plurality of nanoparticles are disposed and cured adjacent to the substrate and proximate to t... | 01/08/2008 |
| 7309645 | Semiconductor thin film crystallization method The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin film 14 over a substrate 10; the step of forming band-shaped portion 16 for blocking crystal growth of the semiconductor thin film in the semic... | 12/18/2007 |
| 7291523 | Method of manufacturing a semiconductor device After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performe... | 11/06/2007 |
| 7279721 | Dual wavelength thermal flux laser anneal A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the... | 10/09/2007 |
| 7273774 | Method for making thin-film semiconductor device A method for making a thin-film semiconductor device includes an annealing step of irradiating an amorphous semiconductor thin film with a laser beam so as to crystallize the amorphous semiconductor thin film. In the annealing step, the semiconductor thin film is co... | 09/25/2007 |
| 7268026 | Method for manufacturing both a semiconductor crystalline film and semiconductor device A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an am... | 09/11/2007 |
| 7250331 | Mask for crystallizing and method of crystallizing amorphous silicon using the same A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of sett... | 07/31/2007 |
| 7247527 | Method for manufacturing semiconductor device, and laser irradiation apparatus It is an object of the present invention to provide a method for manufacturing a crystalline semiconductor film comprising the steps of crystallizing with the use of the metal element for promoting the crystallization to control the orientation and irradiating the l... | 07/24/2007 |
| 7238559 | Method of forming single crystal silicon thin film using sequential lateral solidification (SLS) Provided is a method of forming a single crystal silicon thin film using an SLS method and a patterned grain boundary filtering region. The method of forming a single crystal silicon thin film by crystallizing an amorphous silicon layer deposited on a substrate, inc... | 07/03/2007 |
| 7227186 | Thin film transistor and method of manufacturing the same An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film ... | 06/05/2007 |
| 7223627 | Memory element and its method of formation A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass... | 05/29/2007 |
| 7208395 | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device When the laser light having the harmonic is used for crystallizing the semiconductor film, there is a problem that the energy conversion efficiency from the fundamental wave to the harmonic is low. And since the laser light converted into the harmonic has lower ener... | 04/24/2007 |
| 7208696 | Method of forming a polycrystalline silicon layer A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then... | 04/24/2007 |
| 7205184 | Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same... | 04/17/2007 |
