Did You Know...
...Chester Carlson was a patent agent who tired of having to make multiple copies of patent applications using the only duplication method available at the time: carbon paper. In 1959 he came up with a new copying system and took it to IBM for evaluation. The "experts" at IBM determined potential sales to be only 5,000 units because people wouldn't want to use a bulky machine when they had carbon paper. Carlson's invention was the xerography process, the company founded on the system is Xerox.
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| Number | Title | Issue Date |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7400000 | Nitride-based semiconductor device A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type i... | 07/15/2008 |
| 7393736 | Atomic layer deposition of ZrHfSnOfilms as high k gate dielectrics The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of ZrXHfYSn... | 07/01/2008 |
| 7364933 | Image sensor and method for forming the same A method for forming an image sensor is provided. The method includes providing a semiconductor substrate having a pixel region and a peripheral circuit region, forming a photoelectric transformation section at the semiconductor substrate of the pixel region, formin... | 04/29/2008 |
| 7358544 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device comprising an n-side nitride semiconductor layer and a p-side nitride semiconductor layer formed on a substrate, with a light transmitting electrode 10 formed on the p-side nitride semiconductor layer, and the p-s... | 04/15/2008 |
| 7288458 | SOI active layer with different surface orientation A wafer having an SOI configuration and active regions having different surface orientations for different channel type transistors. In one example, semiconductor structures having a first surface orientation are formed on a donor wafer. Semiconductor structures hav... | 10/30/2007 |
| 7279369 | Germanium on insulator fabrication via epitaxial germanium bonding A method of forming a germanium-on-insulator (GOI). An epitaxial germanium layer is formed on top of a first substrate. A first dielectric film is formed on top of the epitaxial germanium layer. A second substrate is provided. The first substrate is bonded to the se... | 10/09/2007 |
| 7259084 | Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer This invention provides a process for growing Ge epitaxial layers on Si substrate by using ultra-high vacuum chemical vapor deposition (UHVCVD), and subsequently growing a GaAs layer on Ge film of the surface of said Ge epitaxial layers by using metal organic chemic... | 08/21/2007 |
| 7256107 | Damascene process for use in fabricating semiconductor structures having micro/nano gaps In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrific... | 08/14/2007 |
| 7226850 | Gallium nitride high electron mobility transistor structure A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on... | 06/05/2007 |
| 7214598 | Formation of lattice-tuning semiconductor substrates In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36, which comprises alternating graded SiGe layers 38 an... | 05/08/2007 |
| 7211455 | Method for manufacturing semiconductor module A method for manufacturing a semiconductor module incorporated with an optical isolator making use of a Faraday rotator formed of a magnetic garnet film in which a magnetically saturated condition is maintained even without any external magnetic field, in which, at ... | 05/01/2007 |
| 7211521 | Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at lea... | 05/01/2007 |
| 6703649 | Semiconductor element A semiconductor element includes a conductive SiC base having a resistivity of less than 1×105 Ωcm, an underlayer made of a semiconductor nitride including at least Al element which is formed on the SiC base, and a semiconductor nitride layer... | 03/09/2004 |
| 6696306 | Methods of fabricating layered structure and semiconductor device A method of fabricating a layered structure including a substrate, a first semiconductor layer with a first thermal expansion coefficient 댚, and a second semiconductor layer with a second thermal expansion coefficient 댛... | 02/24/2004 |
| 6693033 | Method of removing an amorphous oxide from a monocrystalline surface A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxid... | 02/17/2004 |
| 6667196 | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer ... | 12/23/2003 |
| 6667184 | Single crystal GaN substrate, method of growing same and method of producing same Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms f... | 12/23/2003 |
| 6657232 | Defect reduction in GaN and related materials A material with reduced surface defects includes a defect filter layer on an underlying material. The defect filter reduces dislocations and defects present in an underlying material. The defect filter include islands of one material formed on the underly... | 12/02/2003 |
| 6649287 | Gallium nitride materials and methods The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon subs... | 11/18/2003 |
| 6649288 | Nitride film A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant "c" of the c-axis of the Group III nitri... | 11/18/2003 |
| 6649493 | Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Gr... | 11/18/2003 |
| 6646293 | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 11/11/2003 |
| 6638872 | Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 10/28/2003 |
| 6630692 | III-Nitride light emitting devices with low driving voltage III-Nitride light emitting diodes having improved performance are provided. In one embodiment, a light emitting device includes a substrate, a nucleation layer disposed on the substrate, a defect reduction structure disposed above the nucleation layer, an... | 10/07/2003 |
| 6627520 | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the suppo... | 09/30/2003 |
| 6627974 | Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the suppo... | 09/30/2003 |
| 6623877 | III nitride epitaxial wafer and usage of the same An epitaxial wafer includes a base material made of sapphire-SiC single crystal or the like, a III nitride underfilm including at least Al epitaxially grown on the base material and a GaN film, preferably having a thickness of 50 Å or more, formed on the... | 09/23/2003 |
| 6621148 | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grow... | 09/16/2003 |
| 6617182 | Semiconductor device and semiconductor substrate, and method for fabricating the same A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor l... | 09/09/2003 |
| 6617060 | Gallium nitride materials and methods The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon subs... | 09/09/2003 |
| 6617668 | Methods and devices using group III nitride compound semiconductor A layer comprising silicon oxide (SiO2) is formed on (111) plane of a silicon (Si) substrate in a striped pattern which is longer in the [1-10] axis direction perpendicular to the [110] axis direction. Then a group III nitride compound semicond... | 09/09/2003 |
| 6610144 | Method to reduce the dislocation density in group III-nitride films The present invention discloses a semiconductor film having a reduced dislocation density. The film comprises at least one interlayer structure, including a group III-nitride layer, a passivation interlayer disposed on the group III-nitride layer, interru... | 08/26/2003 |
| 6599362 | Cantilever epitaxial process A process of growing a material on a substrate, particularly growing a Group II-VI or Group III-V material, by a vapor-phase growth technique where the growth process eliminates the need for utilization of a mask or removal of the substrate from the react... | 07/29/2003 |
| 6597023 | Semiconductor light-detecting element A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation... | 07/22/2003 |
| 6594293 | Relaxed InxGa1-xAs layers integrated with Si A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxailly growing a relaxed graded layer of Inx Gal-x | 07/15/2003 |
| 6590236 | Semiconductor structure for use with high-frequency signals High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apar... | 07/08/2003 |
| 6589335 | Relaxed InxGa1-xAs layers integrated with Si A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of Inx Ga1-x | 07/08/2003 |
| 6589856 | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a la... | 07/08/2003 |
| 6586778 | Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts A gallium nitride layer is pendeoepitaxially grown on weak posts on a substrate that are configured to crack due to a thermal expansion coefficient mismatch between the substrate and the gallium nitride layer on the weak posts. Thus, upon cooling, at leas... | 07/01/2003 |
