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| Number | Title | Issue Date |
| 7442622 | Silicon direct bonding method A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surfac... | 10/28/2008 |
| 7429499 | Method of fabricating wafer level package A method of fabricating wafer level package is provided. The method includes the following steps. Firstly, a wafer having a front surface and a rear surface is provided, and the front surface has several conductive pads. Next, a supporting material is attached on th... | 09/30/2008 |
| 7429521 | Capillary underfill of stacked wafers A plurality of wafers are aligned and stacked on a thermally variable rotary table, the table and stack are rotated, and an underfill material is disposed and cured between wafers in the stack, bonding the wafers. Corresponding wafer portions of the plurality of waf... | 09/30/2008 |
| 7422958 | Method of fabricating a mixed substrate A method for fabricating a mixed substrate that include insulating material layer portions buried in a substrate of semiconductor material. The method includes providing a support substrate made of semiconductor material and having a front face that includes open ca... | 09/09/2008 |
| 7411276 | Photosensitive device A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielect... | 08/12/2008 |
| 7410883 | Glass-based semiconductor on insulator structures and methods of making same Methods and apparatus provide for: a semiconductor wafer; at least one porous layer in the semiconductor wafer; an epitaxial semiconductor layer directly or indirectly on the porous layer; and a glass substrate bonded to the epitaxial semiconductor layer via electro... | 08/12/2008 |
| 7410885 | Method of reducing contamination by removing an interlayer dielectric from the substrate edge By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed... | 08/12/2008 |
| 7407863 | Adhesive bonding with low temperature grown amorphous or polycrystalline compound semiconductors Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pres... | 08/05/2008 |
| 7407867 | Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a... | 08/05/2008 |
| 7405108 | Methods for forming co-planar wafer-scale chip packages Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carr... | 07/29/2008 |
| 7402501 | Method of manufacturing a coaxial trace in a surrounding material, coaxial trace formed thereby, and semiconducting material containing same A method of manufacturing a coaxial trace (100) within a surrounding material (190) includes: providing a first substrate (191, 410) and a second substrate (192, 1010) composed of the surrounding material; forming a first portion (101,... | 07/22/2008 |
| 7402446 | Method of manufacturing an electroluminescence device A semiconductor device is provided. The semiconductor device includes an element; a mounting board; and a single film made of a conductive material directly coupling the element with the mounting board. ... | 07/22/2008 |
| 7399652 | Method for manufacturing a micro-electro-mechanical device, in particular an optical microswitch, and micro-electro-mechanical device thus obtained A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top ... | 07/15/2008 |
| 7399680 | Method and structure for implanting bonded substrates for electrical conductivity A partially completed multi-layered substrate, e.g., silicon on silicon. The substrate has a thickness of material from a first substrate. The thickness of material comprises a first face region. The substrate has a second substrate having a second face region. Pref... | 07/15/2008 |
| 7381630 | Method for integrating MEMS device and interposer A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by di... | 06/03/2008 |
| 7381587 | Method of making circuitized substrate A method of making a circuitized substrate and an electrical assembly utilizing same in which the substrate is comprised of at least two sub-composites in which the dielectric material of at least one of these sub-composites is heated during bonding (e.g., laminatio... | 06/03/2008 |
| 7375005 | Method for reclaiming and reusing wafers Embodiments of the present invention provide a method for reclaiming and reusing a wafer. In one embodiment, a method for reclaiming a wafer comprises providing a used, nonproductive wafer having a semiconductor substrate and a polysilicon layer formed on the semico... | 05/20/2008 |
| 7364984 | Method for manufacturing SOI substrate The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the... | 04/29/2008 |
| 7354844 | Method for manufacturing SOI substrate The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the... | 04/08/2008 |
| 7354806 | Semiconductor device structure with active regions having different surface directions and methods Semiconductor structure and method to simultaneously achieve optimal stress type and current flow for both nFET and pFET devices, and for gates orientated in one direction, are disclosed. One embodiment of the method includes bonding a first wafer having a first sur... | 04/08/2008 |
| 7348259 | Method of fabricating a semiconductor structure that includes transferring one or more material layers to a substrate and smoothing an exposed surface of at least one of the material layers A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si1-xGex buffer is deposited where the Ge composition x is increasing from about zer... | 03/25/2008 |
| 7344922 | Methods for forming co-planar wafer-scale chip packages Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carr... | 03/18/2008 |
| 7344977 | Method of electroplating a substance over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 03/18/2008 |
| 7335521 | Method for the production of multilayer discs A Method for manufacturing an optical disc substrate comprises a first substrate with at least one structured surface, on which an anti-adhesive layer, preferably carbon, is deposited and first layer on top of said anti-adhesive layer. On a second substrate with a s... | 02/26/2008 |
| 7332410 | Method of epitaxial-like wafer bonding at low temperature and bonded structure A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-cont... | 02/19/2008 |
| 7326591 | Interconnecting substrates for microelectronic dies, methods for forming vias in such substrates, and methods for packaging microelectronic devices Substrates for mounting microelectronic dies, methods for forming vias in such substrates, and methods for packaging microelectronic devices are disclosed herein. A method of manufacturing a substrate in accordance with one embodiment of the invention includes formi... | 02/05/2008 |
| 7319052 | Alloying method, and wiring forming method, display device forming method, and image display unit fabricating method An alloying method includes the steps of forming a metal layer on a semiconductor having been transferred to a material having a low thermal conductivity, and alloying an interface between the semiconductor and the metal layer by irradiating the interface with a las... | 01/15/2008 |
| 7316966 | Method for transferring substrates in a load lock chamber Provided herein is a substrate processing system, which comprises a cassette load station; a load lock chamber; a centrally located transfer chamber; and one or more process chambers located about the periphery of the transfer chamber. The load lock chamber comprise... | 01/08/2008 |
| 7297613 | Method of fabricating and integrating high quality decoupling capacitors Method of making an integrated passive, such as a high quality decoupling capacitor, includes providing a first temporary support, a silicon capacitor wafer, and providing an oxide layer and a conductive layer on it. Then, a second temporary support, such as a handl... | 11/20/2007 |
| 7288436 | Semiconductor chip package manufacturing method including screen printing process A method for manufacturing a semiconductor chip package may include screen printing an adhesive on a substrate using a screen printing mask. The adhesive may be heated during a first curing process. A semiconductor chip may be attached to the adhesive on the substra... | 10/30/2007 |
| 7288464 | MEMS packaging structure and methods A MEMS article is made by forming a MEMS device on a first substrate, providing a second substrate, depositing a layer of etchable dielectric material, forming at least one lateral post-bond release-etch port by a damascene process using a sacrificial material, and ... | 10/30/2007 |
| 7276428 | Methods for forming a semiconductor structure Methods for forming a semiconductor structure are described. In an embodiment, the technique includes providing a donor wafer having a first semiconductor layer and a second semiconductor layer on the first layer and having a free surface, implanting atomic species ... | 10/02/2007 |
| 7276427 | Method for manufacturing SOI wafer The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafe... | 10/02/2007 |
| 7276430 | Manufacturing method of silicon on insulator wafer Provided is a method of manufacturing a silicon on insulator (SOI) substrate, which includes the steps of (a) forming a buried oxidation layer to a predetermined depth of a first wafer and forming an oxidation layer on a surface of the first wafer; (b) bonding a sec... | 10/02/2007 |
| 7273797 | Methods of forming semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 09/25/2007 |
| 7271439 | Semiconductor device having pad structure for preventing and buffering stress of silicon nitride film The present invention discloses a semiconductor device having a pad structure for preventing a stress of a silicon nitride film. The semiconductor device includes a semiconductor substrate, a lower structure formed on the semiconductor substrate, a first insulation ... | 09/18/2007 |
| 7271043 | Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating laye... | 09/18/2007 |
| 7265028 | Method for producing dislocation-free strained crystalline films A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon ni... | 09/04/2007 |
| 7262112 | Method for producing dislocation-free strained crystalline films A method for forming dislocation-free strained silicon thin film includes the step of providing two curved silicon substrates. One substrate is curved by the presence of silicon dioxide on a back surface. The other substrate is curved by the presence of a silicon ni... | 08/28/2007 |
| 7262088 | Thin film device supply body, method of fabricating thin film device, method of transfer, method of fabricating semiconductor device, and electronic equipment A technique is described in which a layer to be transferred is easily peeled and transferred to a transferred body that is pliable or flexible. Also, a method of fabricating a semiconductor device using these peeling and transfer techniques, and electronic equipment... | 08/28/2007 |
