Class 257/E21.114 - Using liquid deposition (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.09. This subclass
No. of patents: 40
Last issue date: 05/20/2008

Number	Title	Issue Date
7375011	Ex-situ doped semiconductor transport layer A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticl...	05/20/2008
7361529	Transistor production using semiconductor printing fluid A transistor is formed by applying modifier coatings to source and drain contacts and/or to the channel region between those contacts. The modifier coatings are selected to adjust the surface energy pattern in the source/drain/channel region such that semiconductor ...	04/22/2008
7320936	Plating of multi-layer structures An insulating layer (5) and a conductive seed layer (6) are applied to a substrate (1) in a simple process. A photo resist with palladium chloride are provided in a bath for electrophoretic deposition onto the substrate. The photo resist is an i...	01/22/2008
7259046	Semiconductor device and manufacturing method thereof According to one aspect of the present invention, a semiconductor device, comprising a wiring board provided with wires and electrodes; a semiconductor element which is mounted on the wiring board and has plural connection electrodes formed on its surface; and a met...	08/21/2007
7186581	Organic electroluminescent device, manufacturing method therefor, and electronic devices therewith A method for manufacturing an organic EL device comprising: coating a composition including an organic EL material on a plurality of electrodes to form an organic EL layer on each electrode; defining an effectively optical area in which the plurality of electrodes a...	03/06/2007
7141492	Method for forming thin-film, apparatus for forming thin-film, method for manufacturing semiconductor device, electro-optical unit, and electronic apparatus The invention provides a method of forming a high-performance thin-film at low cost using a liquid material in safety, an apparatus to form a thin-film, a method of manufacturing a semiconductor device, an electro-optical unit, and an electronic apparatus. An...	11/28/2006
7115507	Patterning method A substrate is patterned by forming an indent region 8 in the surface 10 of a substrate 4 and depositing a liquid material onto the surface 10 at selected locations adjacent to the indent region 8. The liquid material spreads over ...	10/03/2006
6541354	Method for forming silicon film A solution containing a cyclic silane compound, which does not contain carbon, and/or a silane compound modified by boron or phosphorus is applied onto a substrate and a silicon precursor film is formed, and the film is then transformed into semiconductor...	04/01/2003
6514801	Method for manufacturing thin-film transistor All or a part of the thin films such as a silicon film, an insulation film and a conductive film constituting the thin film transistor is formed using a liquid material. The method mainly consist of the steps of: foaming a coating film by coating a substr...	02/04/2003
6126740	Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the m...	10/03/2000
6086945	Method of forming polycrystalline silicon thin layer A method of forming a polycrystalline silicon thin layer, which comprises the steps of forming a silicon thin film on a surface of a heat resistant substrate by making use of polycrystalline silicon fine particles as a raw material, and heating the silico...	07/11/2000
5866471	Method of forming semiconductor thin film and method of fabricating solar cell A silicon thin film is formed by coating on a substrate a solution of polysilane represented by the general formula --(SiR12)n --, where R1 substituents are selected from the group consisting of hydrogen, an alk...	02/02/1999
5846609	Masking methods for semiconductor materials A method of forming a mask including providing a fluid from a group including oxygen based, nitrogen based, or carbon based fluids, introducing a substrate of semiconductor material into the fluid, and growing a film with thickness in a range of 10-20 Å ...	12/08/1998
5730798	Masking methods during semiconductor device fabrication A method of masking semiconductor substrates during fabrication of semiconductor devices includes positioning an oxide mask on the substrate so as to define a growth area and an unmasked portion the surface. A dense oxide layer is grown on the unmasked po...	03/24/1998
5711803	Preparation of a semiconductor thin film A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simult...	01/27/1998
5683596	Method for etching compound solid state material A method for etching compound solid state material by a meltback method that provides fast etching speed and a smooth surface, and in which the problem of fast saturation of the solvent is solved, high workability is achieved, and the range of application...	11/04/1997
5670279	Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low ele...	09/23/1997
5639299	Method of making compound semiconductor single-crystalline substrate for liquid phase epitaxial growth The disclosed method of making a compound semiconductor single-crystalline substrate for liquid phase epitaxial growth has a relatively low cost and excellent practicality. The compound semiconductor single-crystalline substrate is prepared to have a surf...	06/17/1997
5576248	Group IV semiconductor thin films formed at low temperature using nanocrystal precursors Thin films of the Group IV materials silicon and germanium are produced in the range of 2.5 to 25 nm thick from nanocrystal precursors. According to the invention a solid, continuous film of silicon or germanium is formed by depositing a contiguous layer ...	11/19/1996
5559057	Method for depositing and patterning thin films formed by fusing nanocrystalline precursors Patterns or circuits of semiconductors or metals are produced with dimensions at least as small as 7 nm using nanocrystalline precursors. The substrate is masked with an electron beam sensitive layer and a pattern is traced using a focused electron beam. ...	09/24/1996
5270229	Thin film semiconductor device and process for producing thereof A thin film semiconductor device comprising a semiconductor layer and an electrically conductive thin film which are formed by an alternate current plating method, and a process for producing thereof....	12/14/1993
5262357	Low temperature thin films formed from nanocrystal precursors Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000° K below their bulk melting point. This ...	11/16/1993
5202290	Process for manufacture of quantum dot and quantum wire semiconductors Quantum dot and quantum wire semiconductors in the nanosize range are produced by a process which utilizes a microporous aluminum oxide surface layer on an aluminum metal substrate as a template for the semiconducting material. The microporous surface lay...	04/13/1993
4927786	Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate Disclosed herein is a process for forming a silicon-containing semiconductor thin film, said process comprising the steps of causing a film-forming raw material gas containing silicon atoms as the conventional atoms in the molecule to be adsorbed in liqui...	05/22/1990
4565156	Apparatus for performing solution growth relying on temperature difference technique A solution growth apparatus for conducting an epitaxial growth of a compound semiconductor crystal from solution by relying on the temperature difference technique at a constant growth temperature and on a mass production scale without deranging the contr...	01/21/1986
4561915	Process for epitaxial growth on a corrugated wafer A process for epitaxial growth which effects epitaxial growth while suppressing thermal deformation of surface corrugations of an InGaAsP/InP system semiconductor substrate. Deformation of surface corrugations is suppressed by disposing a GaAs1-z	12/31/1985
4486652	Blackbody radiation source with constant planar energy flux A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the materi...	12/04/1984
4427714	Thin films of compounds and alloy compounds of Group III and Group V elements A thin film of a compound or alloy compound of Group III and Group V elements, particularly of gallium arsenide or gallium arsenide compounds, is produced by impinging, e.g. spraying, onto a heated substrate a liquid or liquids comprising molecules carryi...	01/24/1984
4417347	Semiconductor processor incorporating blackbody radiation source with constant planar energy flux A processor apparatus is provided in which a blackbody radiator having a constant planar energy flux characteristic is placed in opposition to semiconductor material. The blackbody source produces a constant planar energy flux to uniformly heat the materi...	11/22/1983
4383883	Method for fabricating semiconductor device A method is provided for fabricating a semiconductor device comprising the steps of: forming a groove on the surface of an insulator body; forming a polycrystalline or amorphous semiconductor layer on the surface of said insulator body including said groo...	05/17/1983
4375993	Method of producing a semiconductor device by simultaneous multiple laser annealing A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a...	03/08/1983
4371968	Monolithic injection laser arrays formed by crystal regrowth techniques A monolithic laser optical cavity structure and method of forming by use of planar photolithographic and crystal regrowth techniques. An original growth multilayer double heterostructure laser structure is grown by LPE on a N+-GaAs substrate. V-grooves ar...	02/01/1983
4341610	Energy efficient process for continuous production of thin semiconductor films on metallic substrates An energy efficient process is disclosed for the continuous production of semiconductor matrices formed from electrodepositing doped silicon or germanium films on metallic sheet substrates. The energy released from such electrodeposition can then be used ...	07/27/1982
4308820	Apparatus for epitaxial crystal growth from the liquid phase In an arrangement for providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of the reser...	01/05/1982
4298410	Method for growing a liquid phase epitaxial layer on a semiconductor substrate A method for selectively growing a liquid phase epitaxial layer on a semiconductor substrate comprises a first step of supplying a liquid phase epitaxial solution in a chamber of an upper body and supplying a semiconductor substrate on which is selectivel...	11/03/1981
4227291	Energy efficient process for continuous production of thin semiconductor films on metallic substrates An energy efficient process is disclosed for the continuous production of semiconductor matrices formed from depositing doped silicon or germanium films on metallic sheet substrates. The energy released from such deposition can then be used to regenerate ...	10/14/1980
4149914	Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-contain...	04/17/1979
4124411	Method of providing a layer of solid material on a substrate in which liquid from which the solid material can be formed, is spread over the substrate surface A method of providing a layer of solid material, in particular semiconductor material, in which drops of a liquid from which the solid material is deposited, is dropped and spread on a flat surface which is given a rotating movement and also another perio...	11/07/1978
4035205	Amphoteric heterojunction A method of manufacturing a hetero junction by epitaxial deposition in a solution. The solution contains an amphoteric dopant and the composition thereof is modified at a temperature which lies between the transition temperatures prior to and after the mo...	07/12/1977
3940296	Method for growing epitaxial layers from the liquid phase In a method of providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of a reservoir cont...	02/24/1976

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Class 257/E21.114 - Using liquid deposition (EPO)