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| Number | Title | Issue Date |
| 7399687 | Substrate of gallium nitride single crystal and process for producing the same The present invention relates to a method for producing an epitaxial substrate having a III-V group compound semiconductor crystal represented by the general formula InxGayAlzN (wherein, x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) havi... | 07/15/2008 |
| 7374960 | Stress measurement and stress balance in films Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a therm... | 05/20/2008 |
| 7288423 | In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first l... | 10/30/2007 |
| 7288430 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst... | 10/30/2007 |
| 7250360 | Single step, high temperature nucleation process for a lattice mismatched substrate A single step process for nucleation and subsequent epitaxial growth on a lattice mismatched substrate is achieved by pre-treating the substrate surface with at least one group III reactant or at least one group II reactant prior to the introduction of a group V rea... | 07/31/2007 |
| 7226849 | Method of producing integrated semiconductor components on a semiconductor substrate There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or mor... | 06/05/2007 |
| 7132351 | Method of fabricating a compound semiconductor layer A method of fabricating a compound semiconductor layer has steps of forming a first layer made of an oxidizable material on a substrate, forming a second layer made of a compound semiconductor on the first layer, oxidizing the first layer made of the oxidizable mate... | 11/07/2006 |
| 6900070 | Dislocation reduction in non-polar gallium nitride thin films Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achie... | 05/31/2005 |
| 6703255 | Method for fabricating a III nitride film Plural island-shaped crystal portions are formed on a first Al-including nitride base. The island-shaped crystal portions are made of a second nitride, and have a nitride film including a third nitride epitaxially grown thereon. The island-shaped crystal ... | 03/09/2004 |
| 6699760 | Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconducto... | 03/02/2004 |
| 6692982 | Optical semiconductor integrated circuit device and manufacturing method for the same In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrati... | 02/17/2004 |
| 6683013 | Method of formation for quantum dots array using tilted substrate Disclosed is a method of forming a quantum dots array. In the method of the present invention, a structure of wire-like quantum dots with good quality is formed in materials having an inconsistency in the lattice constant on a tilted substrate by using th... | 01/27/2004 |
| 6676751 | Epitaxial film produced by sequential hydride vapor phase epitaxy An epitaxial film of a III-V compound may be formed on a non-native substrate by sequentially forming a plurality of epitaxial layers on the substrate at a growth temperature. By cooling the substrate and each sequentially grown epitaxial layer to a sub-g... | 01/13/2004 |
| 6673702 | Method for producing a semiconductor device A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made o... | 01/06/2004 |
| 6667185 | Method of fabricating nitride semiconductor device The method of fabricating a nitride semiconductor device of this invention includes plural steps of respectively growing plural nitride semiconductor layers on a substrate; and between a step of growing one nitride semiconductor layer and a step of growin... | 12/23/2003 |
| 6660083 | Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to t... | 12/09/2003 |
| 6656272 | Method of epitaxially growing submicron group III nitride layers utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to t... | 12/02/2003 |
| 6645885 | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple Inx Ga1-x N/Iny Ga1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn),... | 11/11/2003 |
| 6645302 | Vapor phase deposition system An object of the present invention is to reduce variance in the flow rates of source gasses and inconsistency in the mixing ratio of the source gasses when the flow paths of the source gasses are switched in a vent/run-type piping system of a vapor deposi... | 11/11/2003 |
| 6642070 | Electrically pumped long-wavelength VCSEL and methods of fabrication A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallo... | 11/04/2003 |
| 6639254 | Epitaxial layer capable of exceeding critical thickness A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a... | 10/28/2003 |
| 6617261 | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates Gallium nitride substrates are formed by etching a gallium nitride layer on a sapphire substrate or by selective area regrowth of a gallium nitride layer first deposited onto a sapphire substrate. The gallium nitride layers are bonded to a support substra... | 09/09/2003 |
| 6617235 | Method of manufacturing Group III-V compound semiconductor The present invention provides for a method of manufacturing a Group III-V compound semiconductor, which grows a nitrogen-contained Group III-V compound semiconductor of the p-type conductivity, without performing any particular post-processing after grow... | 09/09/2003 |
| 6599133 | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 07/29/2003 |
| 6573164 | Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to t... | 06/03/2003 |
| 6566256 | Dual process semiconductor heterostructures and methods A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process. By using such a dual process, the first and second deposi... | 05/20/2003 |
| 6559467 | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 05/06/2003 |
| 6555452 | Method for growing p-type III-V compound material utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 04/29/2003 |
| 6489175 | Electrically pumped long-wavelength VCSEL and methods of fabrication A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR positioned on a substrate wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallo... | 12/03/2002 |
| 6479839 | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 11/12/2002 |
| 6475820 | Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements The present invention provides a method for growing a semiconductor layer by which the size of generable voids is controllable, inclination of the c-axis of the semiconductor crystal is avoidable and the defects in the semiconductor layer is reducible, in... | 11/05/2002 |
| 6476420 | P-N homojunction-based structures utilizing HVPE growth III-V compound layers A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 11/05/2002 |
| 6472300 | Method for growing p-n homojunction-based structures utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 10/29/2002 |
| 6429103 | MOCVD-grown emode HIGFET buffer A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a ga... | 08/06/2002 |
| 6399963 | Semiconductor light emitting element and its manufacturing method When a plurality of semiconductor layers including a nitride compound layer containing indium are stacked on a substrate, materials of layers above the indium containing nitride compound layer are limited to specific compounds, or their growth temperature... | 06/04/2002 |
| 6376338 | Manufacturing method of a semiconductor device having a diffraction grating A first layer of InP is deposited on a diffraction grating so as to cover it, by MOCVD in which PH3 or organophosphorus is used as a source material of P and in which H2 is used as a carrier gas. The substrate is heated up to a tempe... | 04/23/2002 |
| 6336970 | Surface preparation method and semiconductor device A surface preparation method and semiconductor device constituted so as to enable the prevention of carrier accumulation resulting from Si acting as a donor, without making the constitution of a semiconductor manufacturing apparatus complex. When forming ... | 01/08/2002 |
| 6319565 | Stable hydride source compositions for manufacture of semiconductor devices and structures A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21 H) or tritium (31 H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transi... | 11/20/2001 |
| 6300153 | Metal organic vapor phase epitaxy and method for manufacturing semiconductor laser device First, a waveguide which lases in accordance with a predetermined voltage applied thereto is formed on a predetermined region on a substrate. An SiO2 mask is formed on a top of the waveguide. Then, a current-blocking layer of group III material... | 10/09/2001 |
| 6277713 | Amorphous and polycrystalline growing method for gallium nitride based compound semiconductor The amorphous and polycrystalline structures of a GaN-based semiconductor are grown on the surface of a compound semiconductor layer showing by formation of Inx Aly Ga.sub.(1-x-y) N(0ࣘ(x,y)ࣘ1.0000, and (x+y)ࣘ1.0000). More speci... | 08/21/2001 |
