Class 257/E21.104 - Deposition on an insulating or a metallic substrate (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.102. This subclass
No. of patents: 27
Last issue date: 10/28/2008

Number	Title	Issue Date
7442587	Processes for forming backplanes for electro-optic displays A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional...	10/28/2008
7439136	Method of forming a layer comprising epitaxial silicon The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline ma...	10/21/2008
7435633	Electroluminescence device, manufacturing method thereof, and electronic apparatus An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film...	10/14/2008
7393723	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la...	07/01/2008
7390678	Method for fabricating semiconductor device A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Su...	06/24/2008
7384800	Method of fabricating metal-insulator-metal (MIM) device with stable data retention In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of α-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of β-Ta is provided on the Ta...	06/10/2008
7382021	Insulated gate field-effect transistor having III-VI source/drain layer(s) A transistor includes one or more channel taps containing a stack consisting at least in part of a semiconductor an interfacial III-VI layered compound and a conductor. The III-VI compound consists primarily of atoms from Groups IIIA-B and from Group VIA of the Peri...	06/03/2008
7368336	Organic insulator, organic thin film transistor array panel including organic insulator, and manufacturing method therefor An insulating film according to an embodiment of the present invention has Chemical Formula 1 wherein the Rs are equal to or different from each other, m is an integer, the Rs have Chemical Formula ...	05/06/2008
7329924	Integrated circuits and methods of forming a field effect transistor Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semicondu...	02/12/2008
7326981	Methods and apparatuses for producing a polymer memory device Embodiments of the invention provide a method for producing ferroelectric polymer devices (FPMDs) employing conditions that avoid or reduce detrimental impact on the ferroelectric polymer film. For one embodiment, a damascene patterning metallization technique is us...	02/05/2008
7297577	SOI SRAM device structure with increased W and full depletion An SOI device, and a method for producing the SOI device, for use in an SRAM memory having enhanced stability. The SRAM is formed with a wider W and a fully-depleted FET. The wider FET is extended by an expitaxial silicon sidewall, and the performance of the FET is ...	11/20/2007
7276416	Method of forming a vertical transistor The invention includes methods of forming epitaxial silicon-comprising material and methods of forming vertical transistors. In one implementation, a method of forming epitaxial silicon-comprising material includes providing a substrate comprising monocrystalline ma...	10/02/2007
7229901	Fabrication of strained heterojunction structures Growth of multilayer films is carried out in a manner which allows close control of the strain in the grown layers and complete release of the grown films to allow mounting of the released multilayer structures on selected substrates. A layer of material, such as si...	06/12/2007
6645835	Semiconductor film forming method and manufacturing method for semiconductor devices thereof A method for forming a semiconductor film capable allowing easy cleaning of the processing equipment and capable of forming an epitaxial film at low temperatures as well as a manufacturing method for semiconductor devices utilizing this forming method is ...	11/11/2003
6399429	Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device Single-crystal silicon is deposited on an insulating substrate (1) with a crystalline sapphire layer (50) formed thereon as a seed, to form a silicon epitaxial layer (7). P-type impurity ions are implanted into a single-crystal silicon layer, and then N-t...	06/04/2002
6372558	Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate The present invention provides an active matrix substrate having a built-in high-performance driver, in which a single crystal silicon thin film having high electron/hole mobility is uniformly deposited at a relatively low temperature, and an electrooptic...	04/16/2002
5951757	Method for making silicon germanium alloy and electric device structures A method for fabricating silicon-germanium alloy on a sapphire substrate of the present invention comprises the steps of passivating a surface of a sapphire substrate, maintaining a deposition temperature of about 900 degrees C., exposing the passivated s...	09/14/1999
4479297	Method of fabricating three-dimensional semiconductor devices utilizing CeO₂ and ion-implantation. A method for fabricating a three-dimensional multi-layer integrated circuit of single crystalline CeO2 and Si is proposed. This method is characterized in that a single crystalline CeO2 insulation layer, or the like, is formed on a single...	10/30/1984
4177084	Method for producing a low defect layer of silicon-on-sapphire wafer A method is provided for producing a low-defect layer of silicon on a sapphire substrate. A silicon-on-sapphire (SOS) wafer is formed by initially epitaxially depositing silicon on the sapphire substrate to form a monocrystalline layer which is substantia...	12/04/1979
4169746	Method for making silicon on sapphire transistor utilizing predeposition of leads The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined o...	10/02/1979
4147584	Method for providing low cost wafers for use as substrates for integrated circuits The method of manufacture of the present invention provides a wafer that is better than a bulk monocrystalline silicon wafer and equivalent to silicon on sapphire (SOS) wafers for use as substrates for integrated circuits. The method comprises taking an i...	04/03/1979
4131496	Method of making silicon on sapphire field effect transistors with specifically aligned gates The method comprises forming a blind hole in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask comprising a single layer of silicon nitride. The blind holes are filled with epitaxially grown silicon and field effect transistors...	12/26/1978
4119992	Integrated circuit structure and method for making same The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined o...	10/10/1978
4069094	Method of manufacturing apertured aluminum oxide substrates A method for making an apertured aluminum oxide substrate by selectively masking a sapphire wafer, depositing aluminum oxide adjacent the wafer and the mask, and removing the aluminum oxide deposited adjacent the mask and the mask, whereby an aperture is ...	01/17/1978
4053326	Photovoltaic cell A photovoltaic cell includes a metal support which is coated with a metal having a low melting point on which a crystalline layer of a semiconductive material is deposited, the material being doped to form a p-n semiconductor. In preferred embodiments the...	10/11/1977
4052251	Method of etching sapphire utilizing sulfur hexafluoride A process for forming a blind hole having an isosceles trapezoidal cross-section in a sapphire substrate using a sulfur hexafluoride gas etchant and an etch mask of silicon nitride on top of silicon dioxide. A composite of sapphire, silicon dioxide and si...	10/04/1977
3953876	Silicon solar cell array Silicon semiconductor device array, e.g. solar cell device or array of devices; formed from bulk silicon deposited in the form of columnar crystallites bounded by substantially vertical grain boundaries. Junctions are formed across crystallites and along ...	04/27/1976

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Class 257/E21.104 - Deposition on an insulating or a metallic substrate (EPO)