Class 257/E21.102 - Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.101. This subclass
No. of patents: 107
Last issue date: 10/28/2008

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Number	Title	Issue Date
7442657	Producing stress-relaxed crystalline layer on a substrate A stress relaxed monocrystalline layer structure is made on a nonlattice matched substrate by first applying to the substrate epitaxially a monocrystalline layer structure comprising at least one layer, the monocrystalline layer structure forming with the substrate ...	10/28/2008
7427545	Trench memory cells with buried isolation collars, and methods of fabricating same The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrat...	09/23/2008
7393735	Structure for and method of fabricating a high-mobility field-effect transistor A structure and method of fabricating a high-mobility semiconductor layer structure and field-effect transistor (MODFET) that includes a high-mobility conducting channel, while at the same time, maintaining counter doping to control deleterious short-channel effects...	07/01/2008
7375040	Etch stop layer A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to form...	05/20/2008
7371665	Method for fabricating shallow trench isolation layer of semiconductor device A method for fabricating an STI layer of a semiconductor device is disclosed, to improve the integration of the semiconductor device in a method of increasing a moat area for a gate line by minimizing an isolation area between moat areas, which includes the steps of...	05/13/2008
7364980	Manufacturing method of semiconductor substrate Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layer 11 on the surface of a si...	04/29/2008
7358166	Relaxed, low-defect SGOI for strained Si CMOS applications Thermal mixing methods of forming a substantially relaxed and low-defect SGOI substrate material are provided. The methods include a patterning step which is used to form a structure containing at least SiGe islands formed atop a Ge resistant diffusion barrier layer...	04/15/2008
7314790	Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein ...	01/01/2008
7288430	Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst...	10/30/2007
7273818	Film formation method and apparatus for semiconductor process In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process f...	09/25/2007
7244667	Method and device for the production of thin epitaxial semiconductor layers System for producing diffusion-inhibiting epitaxial semiconductor layers, by means of which thin diffusion-inhibiting, epitaxial semiconductor layers can be produced on large semiconductor substrates at a high throughput. The surfaces of the semiconductor sub...	07/17/2007
7202145	Strained Si formed by anneal A semiconductor structure includes a silicon substrate layer, a relaxed silicon-germanium layer on the silicon substrate layer and a strained single crystal silicon layer on the silicon-germanium layer. The silicon-germanium layer may include a thickness of 500 angs...	04/10/2007
6646304	Universal semiconductor wafer for high-voltage semiconductor components A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones o...	11/11/2003
6645835	Semiconductor film forming method and manufacturing method for semiconductor devices thereof A method for forming a semiconductor film capable allowing easy cleaning of the processing equipment and capable of forming an epitaxial film at low temperatures as well as a manufacturing method for semiconductor devices utilizing this forming method is ...	11/11/2003
6617010	Semiconductor thin film and thin film device A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an am...	09/09/2003
6597057	Epitaxial growth in a silicon-germanium semiconductor device with reduced contamination A structure includes an etch stop layer and a cap layer. The etch stop layer is situated over a first oxide isolation region and a second oxide isolation region in a wafer. A window is situated in the cap layer and the etch stop layer. The window exposes ...	07/22/2003
6593211	Semiconductor substrate and method for producing the same There are disclosed a semiconductor substrate having a non-porous monocrystalline layer with reduced crystal defects on a porous silicon layer and a method of forming the substrate. The forming method comprises a heat treatment step of heat-treating a por...	07/15/2003
6562720	Apparatus and method for surface finishing a silicon film A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temp...	05/13/2003
6548380	Semiconductor thin film, semiconductor device employing the same, methods for manufacturing the same and device for manufacturing a semiconductor thin film By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface ...	04/15/2003
6541355	Method of selective epitaxial growth for semiconductor devices A method of selective epitaxial growth for a semiconductor device is disclosed. By employing a hydrogen gas as a selectivity promoting gas in addition to a chlorine gas conventionally used, the method can guarantee the selectivity of epitaxial growth and ...	04/01/2003
6541117	Silicon epitaxial wafer and a method for producing it There is disclosed a silicon epitaxial wafer comprising an epitaxial layer formed on a silicon wafer wherein Erratic phenomenon does not occur in a MOS device fabricated on the silicon epitaxial wafer, a silicon epitaxial wafer having oxide dielectric bre...	04/01/2003
6537924	Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film ...	03/25/2003
6489241	Apparatus and method for surface finishing a silicon film A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temp...	12/03/2002
6486520	Structure and method for a large-permittivity gate using a germanium layer A structure for, and method of forming, a metal-insulator-semiconductor field-effect transistor in an integrated circuit is disclosed. The disclosed method comprises forming a germanium layer 52 on a semiconductor substrate (e.g. silicon 20), depositing a...	11/26/2002
6475627	Semiconductor wafer and vapor growth apparatus It is the object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate ...	11/05/2002
6458205	Silicon epitaxial wafer and its manufacturing method By forming a silicon single-crystal thin film direct on a chemically etched substrate, a time required for all the process can be effectively shortened, which largely contributes to reduction in production cost of a silicon epitaxial wafer and improvement...	10/01/2002
6454854	Semiconductor wafer and production method therefor It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter. When a process gas is sup...	09/24/2002
6444591	Method for reducing contamination prior to epitaxial growth and related structure According to a disclosed embodiment, the surface of a semiconductor wafer is covered by an etch stop layer. For example, the etch stop layer can be composed of silicon dioxide. A cap layer is then fabricated over the etch stop layer. For example, the cap ...	09/03/2002
6436842	Semiconductor wafer including a dot mark of a peculiar shape and method of forming the dot mark A fine protruded dot-like mark is formed on part of a semiconductor wafer surface. A growth layer is grown by epitaxial treatment on an entire surface of a semiconductor wafer including the dot mark so as to form a dot mark. During this growth process, th...	08/20/2002
6426274	Method for making thin film semiconductor The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous struct...	07/30/2002
6342436	Method of manufacturing semiconductor substrate and method of manufacturing solid-state image-pickup device There is a provided a method of manufacturing a semiconductor substrate in which generation of bright points after epitaxial growth is reduced, and there is provided a method of manufacturing a solid-state image-pickup device in which illuminated defects ...	01/29/2002
6342453	Method for CVD process control for enhancing device performance A method and system for controlling the introduction of a species according to a determined concentration profile of a film comprising the species introduced on a substrate. In one aspect, the method comprises controlling the flow rate of a species accord...	01/29/2002
6335269	Semiconductor substrate and method for producing the same The present invention provides a semiconductor substrate comprising a non-porous monocrystalline layer with decreased crystal defects which is formed on a porous silicon layer, and a method of producing the substrate. The method of producing the substrate...	01/01/2002
6313017	Plasma enhanced CVD process for rapidly growing semiconductor films A process of epitaxially growing a Group IV semiconductor film on a surface (WS) of a substrate (W) made of a material comprising one of Si or Ge in a reaction chamber (14) under vacuum. The process includes the steps of heating the substrate to a tempera...	11/06/2001
6306776	Catalytic breakdown of reactant gases in chemical vapor deposition Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface temperature of the semiconductor wafer needed to form the film ther...	10/23/2001
6294443	Method of epitaxy on a silicon substrate comprising areas heavily doped with boron A method of vapor phase epitaxy deposition of silicon on a silicon substrate on or in which exist areas containing dopants at high concentration, among which is boron, while avoiding a selfdoping of the epitaxial layer by boron, including the step of intr...	09/25/2001
6274403	Process for producing heteropitaxial diamond layers on Si-substrates The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which (a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and (b) following t...	08/14/2001
6238478	Silicon single crystal and process for producing single-crystal silicon thin film A first layer having a same conductivity and a substantially identical concentration as a CZ substrate having a high impurity concentration is formed by a vapor phase growth process on the substrate directly, a pressure is changed to purge an atmosphere, ...	05/29/2001
6217650	Epitaxial-wafer fabricating process In an epitaxial-wafer fabricating process for epitaxially growing a silicon layer on the surface of a silicon wafer having the crystal orientation or and an inclination angle of 0°&#b1;1° in a reactive gas at a atmosphereicpressure, a growth...	04/17/2001
6211042	Growth of epitaxial semiconductor films in presence of reactive metal A method is disclosed for forming an epitaxial layer of a semiconductor material over a metal structure disposed upon a surface of a semiconductor substrate, the metal being characterized by a negative Gibbs free energy for the formation of a compound of ...	04/03/2001

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Class 257/E21.102 - Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO)