Bizarre Patents
A haircutting appliance comprises an enclosed housing having a hollow handle connecting the housing to a vacuum source to carry away cut hairs from a subject's head.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7442587 | Processes for forming backplanes for electro-optic displays A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional... | 10/28/2008 |
| 7435633 | Electroluminescence device, manufacturing method thereof, and electronic apparatus An organic electroluminescence device including: a substrate having conductivity on at least one side; a first insulation film, formed on one side of the substrate, while having an aperture which partially exposes the same side of the substrate; a semiconductor film... | 10/14/2008 |
| 7422987 | Method for manufacturing semiconductor device It is an object of the invention to provide a technique forming a crystalline semiconductor film whose orientation is uniform by control of crystal orientation and obtaining a crystalline semiconductor film in which concentration of an impurity is reduced. A configu... | 09/09/2008 |
| 7414266 | Semiconductor device and manufacturing method thereof A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain regio... | 08/19/2008 |
| 7393723 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the la... | 07/01/2008 |
| 7382021 | Insulated gate field-effect transistor having III-VI source/drain layer(s) A transistor includes one or more channel taps containing a stack consisting at least in part of a semiconductor an interfacial III-VI layered compound and a conductor. The III-VI compound consists primarily of atoms from Groups IIIA-B and from Group VIA of the Peri... | 06/03/2008 |
| 7368358 | Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon body A structure, and method of fabrication, for high performance field effect devices is disclosed. The MOS structures include a crystalline Si body of one conductivity type, a strained SiGe layer epitaxially grown on the Si body serving as a buried channel for holes, a... | 05/06/2008 |
| 7297577 | SOI SRAM device structure with increased W and full depletion An SOI device, and a method for producing the SOI device, for use in an SRAM memory having enhanced stability. The SRAM is formed with a wider W and a fully-depleted FET. The wider FET is extended by an expitaxial silicon sidewall, and the performance of the FET is ... | 11/20/2007 |
| 7229863 | Method for fabricating thin film transistors A method for fabricating a thin film transistor is provided. First, a gate is formed on a substrate. A gate-insulating layer is formed to cover the gate. A patterned semiconductor layer is formed on the gate-insulating layer. A first and a second conductive layer ar... | 06/12/2007 |
| 7215006 | Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provi... | 05/08/2007 |
| 7208800 | Silicon-on-insulator substrate, fabricating method thereof, and method for fabricating floating structure using the same A silicon-on-insulator (SOI) substrate including laminated layers of a substrate, an oxide layer, and a silicon layer in order. The oxide layer has an electrifying hole fluidly connected with the substrate and the electrifying hole is filled with a part of the silic... | 04/24/2007 |
| 4833100 | Method for producing a silicon thin film by MBE using silicon beam precleaning The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam ep... | 05/23/1989 |
| 4622236 | Boron nitride film and process for preparing same A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a... | 11/11/1986 |
| 4565741 | Boron nitride film and process for preparing same A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a... | 01/21/1986 |
| 4523211 | Semiconductor device A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers... | 06/11/1985 |
| 4477308 | Heteroepitaxy of multiconstituent material by means of a _template layer The method for growing heteroepitaxial multiconstituent material on a substrate comprises deposition of a thin disordered layer of a "template-forming" material, i.e., material containing at least one constituent of the multiconstituent material to be gro... | 10/16/1984 |
| 4251289 | Gradient doping in amorphous silicon An amorphous silicon semiconductor having a gradient doping profile is produced by thermo-electrically diffusing an ionizable deposit material such as antimony or aluminum, for example, into the amorphous silicon layer. Embodied in a photovoltaic device, ... | 02/17/1981 |
| 4218271 | Method of manufacturing semiconductor devices utilizing a sure-step molecular beam deposition Method of making a semiconductor device which includes a III-V compound stratum. A film consisting of one of the elements Sn, Ge, Si, Be, Mn or Mg is deposited by an M.B.E. process on an exposed surface of the III-V compound stratum. A III-V compound laye... | 08/19/1980 |
