Did You Know...
...that several people are credited with the invention of the flush toilet? Most people have heard of Thomas Crapper (1837-1910), the sanitary engineer who invented the valve-and-siphon arrangement that made the modern toilet possible. Another claimant to "the throne" was British inventor Alexander Cumming who patented a toilet in 1775. Then there's a nameless Minoan (a native of ancient Crete) who lived 4,000 years ago who supposedly was ahead of his time and created the first flush toilet!
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7439165 | Method of fabricating tensile strained layers and compressive strain layers for a CMOS device A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac... | 10/21/2008 |
| 7435666 | Epitaxial growth method Provided is an epitaxial growth method for forming a high-quality crystalline growth semiconductor wafer. The method includes forming a buffer layer on a single crystalline wafer using a single crystalline material; forming a mask layer on the buffer layer; forming ... | 10/14/2008 |
| 7410913 | Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ... | 08/12/2008 |
| 7410888 | Method for manufacturing strained silicon In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial l... | 08/12/2008 |
| 7410864 | Trench and a trench capacitor and method for forming the same A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. ... | 08/12/2008 |
| 7399716 | Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4. ... | 07/15/2008 |
| 7371665 | Method for fabricating shallow trench isolation layer of semiconductor device A method for fabricating an STI layer of a semiconductor device is disclosed, to improve the integration of the semiconductor device in a method of increasing a moat area for a gate line by minimizing an isolation area between moat areas, which includes the steps of... | 05/13/2008 |
| 7364982 | Process for preparing a bonding type semiconductor substrate The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cl... | 04/29/2008 |
| 7361556 | Method of fabricating semiconductor side wall fin A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.... | 04/22/2008 |
| 7358112 | Method of growing a semiconductor layer A method of growing a p-type nitride semiconductor material having magnesium as a p-type dopant by molecular beam epitaxy (MBE), comprises supplying ammonia gas, gallium and magnesium to an MBE growth chamber containing a substrate so as to grow a p-type nitride sem... | 04/15/2008 |
| 7341927 | Wafer bonded epitaxial templates for silicon heterostructures A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed... | 03/11/2008 |
| 7338886 | Implantation-less approach to fabricating strained semiconductor on isolation wafers A method of fabricating a semiconductor substrate includes forming a buffer layer on the substrate. A Ge containing layer, such as a SiGe is formed over the buffer layer. The buffer layer includes defects at the interface of the substrate and buffer layer. The subst... | 03/04/2008 |
| 7329596 | Method for tuning epitaxial growth by interfacial doping and structure including same A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that r... | 02/12/2008 |
| 7312128 | Selective epitaxy process with alternating gas supply In one example, a method of epitaxially forming a silicon-containing material on a substrate surface is presented which includes positioning a substrate into a process chamber. The substrate has a monocrystalline surface and at least a second surface, such as an amo... | 12/25/2007 |
| 7294562 | Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the firs... | 11/13/2007 |
| 7288423 | In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first l... | 10/30/2007 |
| 7265417 | Method of fabricating semiconductor side wall fin A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.... | 09/04/2007 |
| 7244659 | Integrated circuits and methods of forming a field effect transistor Integrated circuits and methods of forming field effect transistors are disclosed. In one aspect, an integrated circuit includes a semiconductor substrate comprising bulk semiconductive material. Electrically insulative material is received within the bulk semicondu... | 07/17/2007 |
| 7241700 | Methods for post offset spacer clean for improved selective epitaxy silicon growth A gate structure is formed overlying a substrate. A source/drain region of the substrate is exposed to a soluction comprising ammonium hydroxide, hydrogen peroxide, and deionized water to etch an upper-most semiconductor porton of the source/drain region. ... | 07/10/2007 |
| 7202142 | Method for producing low defect density strained -Si channel MOSFETS A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one depositi... | 04/10/2007 |
| 7157297 | Method for fabrication of semiconductor device On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of t... | 01/02/2007 |
| 6667492 | Quantum ridges and tips The present invention provides a quantum structure product comprising a substrate having quantum ridges and quantum tips on at least one surface thereof. In some embodiments of the invention quantum ridges may support quantum wires and the quantum tips ma... | 12/23/2003 |
| 6620665 | Method for fabricating semiconductor device A process control is performed for fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a device, for example, including no Ge-containing semiconductor film on a common fabrication line. When the wafer includi... | 09/16/2003 |
| 6596555 | Forming of quantum dots A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth ... | 07/22/2003 |
| 6555221 | Method for forming an ultra microparticle-structure A method for forming an ultra microparticle-structure composed of ultra microparticles including the steps of: forming on a substrate higher wettability parts and lower wettability parts to a material to be deposited, depositing on the substrate the material t... | 04/29/2003 |
| 6459712 | Semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 10/01/2002 |
| 6424004 | Semiconductor device having quantum dots A method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the f... | 07/23/2002 |
| 6403976 | Semiconductor crystal, fabrication method thereof, and semiconductor device A Si1-x Gex /Si1-y Cy short-period superlattice which functions as a single SiGeC layer is formed by alternately growing Si1-x Gex layers (0 | 06/11/2002 |
| 6377596 | Semiconductor materials, methods for fabricating semiconductor materials, and semiconductor devices An insulating member (4) of an amorphous structure partially opened to expose a substrate (1; 1, 2, 3) is formed on the substrate. At least a compound semiconductor (5, 51, 52) containing at least nitrogen as a constituent element is deposited on the insu... | 04/23/2002 |
| 6358316 | Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap ... | 03/19/2002 |
| 6344403 | Memory device and method for manufacture A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which ... | 02/05/2002 |
| 6274518 | Method for producing a group III nitride compound semiconductor substrate The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semicond... | 08/14/2001 |
| 6229197 | Epitaxial overgrowth method and devices A vertical field effect transistor (700) and fabrication method with buried gates (704) having gate sidewall crystal orientation the same as the substrate surface and a low index substrate crystal orientation without tilt to a higher index direction. The ... | 05/08/2001 |
| 6194237 | Method for forming quantum dot in semiconductor device and a semiconductor device resulting therefrom Method for forming quantum dots using agglomeration of a conductive layer and a semiconductor device resulting therefrom are disclosed. The method includes the steps of forming a first insulating layer on a substrate, forming a conductive layer on the fir... | 02/27/2001 |
| 6130142 | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450°-650° C. in a silane gas atmosphere of less than 0.... | 10/10/2000 |
| 6130143 | Quantum wires formed on a substrate, manufacturing method thereof, and device having quantum wires on a substrate While a silicon substrate is heated, gold is evaporated thereon at a thickness of 0.6 nm, whereby melted alloy droplets are formed on the substrate surface. Then, the silicon substrate is heated to 450°-650° C. in a silane gas atmosphere of less than 0.... | 10/10/2000 |
| 6124209 | Method for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin film The surface of a silicon single crystal substrate 2 is exposed to a mixed gas of hydrogen fluoride gas and hydrogen gas at 0° C.-100° C. to remove a natural oxide film 3 formed on the surface of silicon single crystal substrate 2. The method, as a pre-t... | 09/26/2000 |
| 6103600 | Method for forming ultrafine particles and/or ultrafine wire, and semiconductor device using ultrafine particles and/or ultrafine wire formed by the forming method A quantum dot and quantum fine wire forming method is provided which can allow control of the position for crystalline particle growth and enables formation of particles with high uniformity in size and density and with high reproducibility. After an Si s... | 08/15/2000 |
| 6097046 | Vertical field effect transistor and diode A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).... | 08/01/2000 |
| 6074936 | Method of fabricating a quantum device A method of fabricating quantum wire structures and devices, and quantum dot structures and devices comprise steps of: depositing an insulating layer on a semiconductor substrate, forming a line patterns and a square patterns in an insulating layer, formi... | 06/13/2000 |
