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| Number | Title | Issue Date |
| 7429534 | Etching a nitride-based heterostructure An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. A... | 09/30/2008 |
| 7368332 | SOI substrate manufacturing method This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer... | 05/06/2008 |
| 7238589 | In-place bonding of microstructures A method for bonding microstructures to a semiconductor substrate using attractive forces, such as, hydrophobic, van der Waals, and covalent bonding is provided. The microstructures maintain their absolute position with respect to each other and translate vertically... | 07/03/2007 |
| 7151061 | Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure and products produced thereof A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. Accord... | 12/19/2006 |
| 6617188 | Quantum well intermixing The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions f... | 09/09/2003 |
| 6611007 | Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsP quant... | 08/26/2003 |
| 6027989 | Bandgap tuning of semiconductor well structure In a method of bandgap tuning of a quantum well heterostructure wherein ions are implanted in the heterostructure by ion implantation, the ions are implanted so that different regions are implanted in such a way as to create different concentrations of de... | 02/22/2000 |
| 5843802 | Semiconductor laser formed by layer intermixing A method for fabricating a multiple layer semiconductor device, such as a laser, using impurity-induced, or vacancy-enhanced, intermixing of semiconductor layers to selectively inactivate quantum well regions in the device.... | 12/01/1998 |
| 5708674 | Semiconductor laser or array formed by layer intermixing A fabrication process and several structures for an index-guided laser diode formed by IILD or for a multiple wavelength laser array containing stacked semi-conductive active layers with quantum wells. The laser wavelength is varied laterally by effective... | 01/13/1998 |
| 5703894 | Radiation-emitting semiconductor diode and method of manufacturing such a diode The invention relates to a radiation-emitting semiconductor diode, in particular a laser diode, whose active layer (3) comprises a II-V mixed crystal in which various elements, for example III elements, may be present in orderly or disorderly arrangement.... | 12/30/1997 |
| 5395793 | Method of bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semiconductor heterostructure includes repeatedly forming a disordered region that is spatially separated from a quantum well active region and subsequently annealing the heterostructure each time after the... | 03/07/1995 |
| 5381027 | Semiconductor device having a heterojunction and a two dimensional gas as an active layer This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which ... | 01/10/1995 |
| 5376583 | Method for producing P-type impurity induced layer disordering P-type impurity induced layer disordering (IILD) in compound semiconductor structures or multilayer semiconductor material structures is produced by providing a source of a disordering agent during annealing multiple layers of III-V semiconductor material... | 12/27/1994 |
| 5346856 | Method of making a selective compositional disordering of a GaAs based heterostructure by the in-diffusion of Au through a single crystal, epitaxially grown Ge film A method for producing a buried heterostructure active devices and a passive waveguide by providing a heterostructure substrate such as a superlattice having at least one planar GaAs layer and at least one AlGaAs layer adjacent to it. A single crystal ger... | 09/13/1994 |
| 5281543 | Fabrication method for quantum devices in compound semiconductor layers Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electro... | 01/25/1994 |
| 5258631 | Semiconductor device having a two-dimensional electron gas as an active layer This invention discloses a heterojunction type field effect transistor such as 2DEG-FET and a heterojunction type bipolar transistor such as 2DEG-HBT. The former is fabricated by applying to the formation of its source and drain regions a technique which ... | 11/02/1993 |
| 5238868 | Bandgap tuning of semiconductor quantum well structures A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects i... | 08/24/1993 |
| 5232867 | Method for the making of optoelectronic semiconductor devices A method for the making of an optoelectronic device comprising at least one quantum well, the barriers of which are made of GaInP and the well of which is made of GaAs, is carried out by the interdiffusion of elements between barriers and quantum wells in... | 08/03/1993 |
| 5182229 | Method for diffusing an n type impurity from a solid phase source into a III-V compound semiconductor A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from th... | 01/26/1993 |
| 5170226 | Fabrication of quantum devices in compound semiconductor layers and resulting structures Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electro... | 12/08/1992 |
| 5108948 | Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source A method of producing a semiconductor device such as a semiconductor laser having a controllably disordered superlattice. The superlattice is grown epitaxially and in the same epitaxial growth process a heavily selenium doped semiconductor layer is also g... | 04/28/1992 |
| 5023199 | Method of diffusing Zn into compound semiconductor A method of diffusing Zn into AlGaInP using Alx G1-x As (0ࣘxࣘ1) as a diffusion stopping at a position of predetermined depth from the surface of the AlGaInP, or using Alx Ga1-x As (0ࣘxࣘ1) as a diffusion ... | 06/11/1991 |
| 5013684 | Buried disordering sources in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function... | 05/07/1991 |
| 4871690 | Semiconductor structures utilizing semiconductor support means selectively pretreated with migratory defects Different diffusion rates can be made operative relative to diffusion disordering in designated areas of a thin active layer or of quantum well feature compared to thermal disordering in other areas thereof where disordering is not desired by the selectiv... | 10/03/1989 |
| 4865923 | Selective intermixing of layered structures composed of thin solid films Synthetic layered structures, which may be semiconductor structures, are modified, both laterally and vertically, to provide novel electronic, optoelectronic, and optical properties. This is accomplished by selective intermixing of such layered structures... | 09/12/1989 |
| 4830983 | Method of enhanced introduction of impurity species into a semiconductor structure from a deposited source and application thereof A two step annealing process is utilized for performing imputity induced disordering comprising an initial higher temperature, shorter term or rapid thermal anneal (RTA) treatment followed by a lower temperature, longer term or slow thermal anneal (STA) t... | 05/16/1989 |
| 4771010 | Energy beam induced layer disordering (EBILD) A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/o... | 09/13/1988 |
| 4751194 | Structures including quantum well wires and boxes A method of fabricating quantum well wires and boxes is described in which interdiffusion in a semiconductor having a compositional profile is enhanced by the presence of defects created by ion implantation in localized regions.... | 06/14/1988 |
| 4731338 | Method for selective intermixing of layered structures composed of thin solid films A multilayer structure formed of two or more separate layers of different materials can be selectively intermixed so as to become compositionally transmuted, such that the distinction between the different original materials is lost, at least partially. T... | 03/15/1988 |
| 4671830 | Method of controlling the modeling of the well energy band profile by interdiffusion The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component th... | 06/09/1987 |
| 4654090 | Selective disordering of well structures by laser annealing A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material dep... | 03/31/1987 |
| 4639275 | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the mult... | 01/27/1987 |
| 4594603 | Semiconductor device with disordered active region A semiconductor device is disclosed, which includes a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from th... | 06/10/1986 |
| 4511408 | Semiconductor device fabrication with disordering elements introduced into active region Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.... | 04/16/1985 |
| 4378255 | Method for producing integrated semiconductor light emitter A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gal... | 03/29/1983 |
