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| Number | Title | Issue Date |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7288430 | Method of fabricating heteroepitaxial microstructures An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microst... | 10/30/2007 |
| 7105370 | Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III–V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joi... | 09/12/2006 |
| 6531379 | High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr... | 03/11/2003 |
| 6251755 | High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the pr... | 06/26/2001 |
| 6010950 | Method of manufacturing semiconductor bonded substrate The most distinctive feature of the present invention lies in that a warp and crystal defects can be prevented from occurring and a processing margin for forming an isolation groove can be improved in an intelligent power device including a power element ... | 01/04/2000 |
| 4667076 | Method and apparatus for microwave heat-treatment of a semiconductor water The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is pr... | 05/19/1987 |
| 4593168 | Method and apparatus for the heat-treatment of a plate-like member The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting state, and the electromagnetic wave, such as microwave, is pr... | 06/03/1986 |
