Class 257/E21.07 - Preliminary treatment of Se or Te, its application to substrate, or the subsequent treatment of combination (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.068. This subclass
No. of patents: 3
Last issue date: 05/20/2008

Number	Title	Issue Date
7374174	Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is located between the first and...	05/20/2008
7229918	Nitrogen rich barrier layers and methods of fabrication thereof Methods of forming barrier layers and structures thereof are disclosed. A nitrogen rich region is formed at a top surface of a barrier layer by exposing the barrier layer to a nitridation treatment. The nitrogen rich region increases the oxidation resistance of the ...	06/12/2007
7163837	Method of forming a resistance variable memory element A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a silver layer over a chalcogenide glass layer. Processing the silver layer via heat treating, light irradiation, ...	01/16/2007

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