Class 257/E21.062 - Ohmic electrode (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.061. This subclass
No. of patents: 32
Last issue date: 08/12/2008

Number	Title	Issue Date
7411219	Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap ...	08/12/2008
7368822	Copper metalized ohmic contact electrode of compound device The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis...	05/06/2008
7312529	Structure and method for producing multiple size interconnections An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises ...	12/25/2007
7205220	Gallium nitride based III-V group compound semiconductor device and method of producing the same A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed o...	04/17/2007
7141498	Method of forming an ohmic contact in wide band semiconductor A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate at a high temperature to cause a solid state chemical reaction betwee...	11/28/2006
7135420	Semiconductor device and manufacturing method thereof Single crystal silicon is grown in a [100] direction to make a bulk. Next, a silicon substrate with a normal of a surface extending in an inclined direction from a [100] direction is cut from the bulk. At this time, when an angle (off-angle) of inclination of the no...	11/14/2006
6667495	Semiconductor configuration with ohmic contact-connection and method for contact-connecting a semiconductor configuration A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first co...	12/23/2003
6544674	Stable electrical contact for silicon carbide devices An electrical contact for a silicon carbide component comprises a material that is in thermodynamic equilibrium with silicon carbide. The electrical contact is typically formed of Ti3 SiC2 that is deposited on the silicon carbide com...	04/08/2003
6468890	Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having ...	10/22/2002
6388272	W/WC/TAC ohmic and rectifying contacts on SiC Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrodes connect to the c...	05/14/2002
6365919	Silicon carbide junction field effect transistor A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a p...	04/02/2002
6365494	Method for producing an ohmic contact A component is produced on a substrate made of SiC. The component has at least one ohmic contact and at least one Schottky contact. The component is brought to a temperature of more than 1300° C. at least during the growth of an epitaxial layer. To ensur...	04/02/2002
6274889	Method for forming ohmic electrode, and semiconductor device A semiconductor device having a single substrate made of silicon carbide; an epitaxial film made of Alx Iny Ga.sub.(1-x-y) N which is selectively formed on the single substrate; an amplifier section including a gate formed on the sin...	08/14/2001
6273950	SiC device and method for manufacturing the same A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmenta...	08/14/2001
6262439	Silicon carbide semiconductor device A semiconductor substrate includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer thereon. A first conductivity type semiconductor region is formed in a surface portion of the second conductivity type semi...	07/17/2001
6214107	Method for manufacturing a SiC device A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmenta...	04/10/2001
6150246	Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC Metallic osmium on SiC (either ଲ or ଱) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction h...	11/21/2000
6110813	Method for forming an ohmic electrode A first metal film and a second metal film, both of which are made of Ni or the like, are deposited on the upper surface of a substrate made of SiC. In such a state, the interface between the first metal film and the substrate and the interface between th...	08/29/2000
6043513	Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact In a method of producing an ohmic contact (5) to a p-type ଱-SiC layer (3b) in a semiconductor device (1), layers of aluminium, titanium and silicon are deposited on said ଱-SiC layer (3b), and said deposited layers (5) are annealed to convert a...	03/28/2000
5980265	Low resistance, stable ohmic contacts to silicon carbide, and method of making the same Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providi...	11/09/1999
5929523	Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC Metallic osmium on SiC (either ଲ or ଱)forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction ha...	07/27/1999
5877077	Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact In a method of producing an ohmic contact to a p-type ଱-SiC layer in a semiconductor device, layers of aluminum, titanium and silicon are deposited on the ଱-SiC layer, and the deposited layers are annealed to convert at least a part of the dep...	03/02/1999
5766343	Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same A silicon carbide semiconductor material; and method of making same, in which a doped film of 3C-silicon carbide is grown heteroepitaxially on a 6H-silicon carbide material. Growth occurs at 1200° C. or less, and produces a heterolayer having a reduced b...	06/16/1998
5652437	Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer The present invention is a semiconductor device comprising a semiconductor layer of SiC, a metal layer adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer of a material having a smaller bandgap than the SiC of the SiC-layer ...	07/29/1997
5597744	Method of producing a silicon carbide semiconductor device Electrodes 16a and 16b composed of metal nitride made of either one of TiN, ZrN, HfN, VN and TaN are formed on an N-type source region 12 and drain region 13 of a P-type SiC substrate 11, respectively, Nitrogen-rich layers 12a and 13a are formed in surfac...	01/28/1997
5502003	Silicon carbide electronic device manufacturing method Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does...	03/26/1996
5442200	Low resistance, stable ohmic contacts to silcon carbide, and method of making the same Stable, high temperature electrical contacts to silicon carbide formed using a unique silicide formation process that employs a sacrificial silicon layer between the silicon carbide and the contacting metal, which forms a metal silicide interlayer providi...	08/15/1995
5409859	Method of forming platinum ohmic contact to p-type silicon carbide A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. ...	04/25/1995
5323022	Platinum ohmic contact to p-type silicon carbide A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. ...	06/21/1994
5171608	Method of pattern transfer in photolithography using laser induced metallization Method for improved photolithography using a laser induced metallization cess to produce a metal mask wherein a work piece surface is treated to have a predetermined pattern of at least two materials each having different electron band gaps, the treated ...	12/15/1992
5124779	Silicon carbide semiconductor device with ohmic electrode consisting of alloy A silicon carbide semiconductor device is disclosed which includes a silicon carbide single-crystal layer and at least one ohmic electrode in contact with the silicon carbide single-crystal layer, wherein the ohmic electrode is made of a titanium-aluminum...	06/23/1992
5087322	Selective metallization for high temperature semiconductors A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor depos...	02/11/1992

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Class 257/E21.062 - Ohmic electrode (EPO)