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Kissing Shield

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Class 257/E21.046 - Ohmic electrode (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.045. This subclass
No. of patents: 16
Last issue date: 05/06/2008


NumberTitleIssue Date
7368822Copper metalized ohmic contact electrode of compound device
The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resis...
05/06/2008
6614095Diamond component with rear side contact and a method for the production thereof
The invention relates to a component which has a function element arranged on a substrate the function element being electrically contacted in a contact region on its rear side facing the substrate. The substrate has an opening in the contact region and t...
09/02/2003
6140148Method of making a contact to a diamond
The invention provides a method of making an ohmic contact to a n-type diamond or an injecting contact to a p-type diamond. The method includes the steps of implanting a surface of the diamond with a n-type dopant atom at a dose just below the amorphisati...
10/31/2000
5869390Method for forming electrode on diamond for electronic devices
Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of ...
02/09/1999
5770467Method for forming electrode on diamond for electronic devices
Disclosed is a method of forming electrodes on diamond comprising the steps of: forming a mask pattern on diamond or diamond film; performing a treatment of the diamond surface by a plasma of inert gases; forming an electrode film on the whole surface of ...
06/23/1998
5757032Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature
A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further incl...
05/26/1998
5668382Ohmic electrode and method for forming it
An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistanc...
09/16/1997
5382808Metal boride ohmic contact on diamond and method for making same
An ohmic contact includes a metal boride layer on a semiconducting diamond layer. The metal boride preferably includes boron and a transition metal and, more preferably, a refractory metal. Heating of the metal boride layer and diamond during fabrication ...
01/17/1995
5306529Process for forming an ohmic electrode on a diamond film involving heating in a vacuum atmosphere
Herein described is a process for forming ohmic electrodes to a diamond film, comprising the steps of implanting the ions of at least one element selected from the group consisting of B, Li, Na, Ar, C, Ti, W, Ta, Mo, Fe, Ni and Co on the diamond film at t...
04/26/1994
5210431Ohmic connection electrodes for p-type semiconductor diamonds
In an ohmic contact electrode for the p-type semiconductor diamond, the electrode is formed of metals or metallic compounds containing boron on a p-type semiconductor diamond, so as to obtain a decreased contact resistance....
05/11/1993
5075757Ohmic contact electrodes for semiconductor diamonds
As electrodes for the semiconductor diamond, the p+ or n+ polycrystalline silicon film or amorphous silicon film including microcrystalline silicon phase is formed on the semiconductor diamond, whereby an ohmic contact electrode with...
12/24/1991
5055424Method for fabricating ohmic contacts on semiconducting diamond
A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the car...
10/08/1991
5002899Electrical contacts on diamond
A method for forming ohmic contacts on diamond substrates, where, by irradiating a diamond substrate with radiation having a wavelength in the neighborhood of 193 nm, regions of enhanced electrical conductivity may be formed without substantially heating ...
03/26/1991
4833328Forming contacts on diamonds
The invention provides a method of preparing a detector which is sensitive to ionizing radiation or atomic emissions. The method includes the steps of forming at least two discrete conductive regions on a counting diamond by ion implantation, at a tempera...
05/23/1989
4581623Interlayer contact for use in a static RAM cell
A CMOS static RAM, which has P channel transistors formed in a second polysilicon layer, N channel transistors formed in the substrate, and gates of both the N channel and P channel transistors formed in a first polysilicon layers, requires that ohmic con...
04/08/1986
4511783Method for making electrical contacts to diamond by means of a laser, and diamond provided with contacts according to this optical method
A method for making electrical contacts to diamond, in which a surface layer of the diamond is transformed by means of a laser beam into graphite having a sheet resistivity in the range of 5 to 100 Ohms. The diamond to be treated and the laser beam are mo...
04/16/1985
 
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