Did You Know...
...that a workman who left the soap mixing machine on too long was responsible for making Ivory Soap? He was so embarrassed by his mistake that he threw the mess in a stream. Imagine his dismay when the evidence of his error floated to the surface! Result: Ivory soap, the soap that floats.
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| Number | Title | Issue Date |
| 7442606 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes providing a semiconductor substrate in which a floating gate pattern is formed. A dielectric layer, a conductive layer for a control gate, a tungsten silicide layer, a first silicon oxynitride layer, a hard m... | 10/28/2008 |
| 7416992 | Method of patterning a low-k dielectric using a hard mask By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes. ... | 08/26/2008 |
| 7390738 | Fabrication of semiconductor devices using anti-reflective coatings Techniques are disclosed for fabricating a device using a photolithographic process. The method includes providing a first anti-reflective coating over a surface of a substrate. A layer which is transparent to a wavelength of light used during the photolithographic ... | 06/24/2008 |
| 7368331 | Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a substrate, b) forming an isolati... | 05/06/2008 |
| 7365408 | Structure for photolithographic applications using a multi-layer anti-reflection coating A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring feat... | 04/29/2008 |
| 7344990 | Method of manufacturing micro-structure element by utilizing molding glass A method of manufacturing micro-structure elements by utilizing molding glass includes the steps of forming a mold having a micro-structure pattern thereon by using an electroforming process, making a copy of the micro-structuring pattern on a glass structure by usi... | 03/18/2008 |
| 7345002 | Replication and transfer of microstructures and nanostructures A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto a receiving substrate using one of a variety of printing or imprint t... | 03/18/2008 |
| 7335585 | Method for preventing the formation of a void in a bottom anti-reflective coating filling a via hole A method for manufacturing a semiconductor device which, on performing a via first Dual Damascene process, inhibits or prevents the formation of a void in a bottom anti-reflective coating filling a via hole. The method typically includes the steps of forming a botto... | 02/26/2008 |
| 7326646 | Nitrogen-free ARC layer and a method of manufacturing the same The present invention provides a nitrogen-free ARC layer, which is formed on the basis of silane and carbon dioxide by PECVD in a nitrogen-free deposition atmosphere. The optical characteristics may be tuned in a wide range, wherein, in particular, a back reflection... | 02/05/2008 |
| 7314813 | Methods of forming planarized multilevel metallization in an integrated circuit A method is provided for forming a semiconductor device that reduces metal-stress-induced photo misalignment by incorporating a multi-layered anti-reflective coating over a metal layer. The method includes providing a substrate with a conductive layer formed over th... | 01/01/2008 |
| 7314824 | Nitrogen-free ARC/capping layer and method of manufacturing the same The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover... | 01/01/2008 |
| 7291552 | Multi-layer film stack for extinction of substrate reflections during patterning A method including introducing a dielectric layer over a substrate between an interconnection line and the substrate, the dielectric layer comprising a plurality of alternating material layers; and patterning an interconnection to the substrate. An apparatus compris... | 11/06/2007 |
| 7265021 | Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment Aspects of the invention can provide an alignment method that is preferably applicable when manufacturing equipments by liquid-phase processing. The alignment method in a device manufacturing process can include forming of a functional film on a substrate by liquid-... | 09/04/2007 |
| 7235479 | Organic solvents having ozone dissolved therein for semiconductor processing utilizing sacrificial materials A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist ... | 06/26/2007 |
| 7172964 | Method of preventing photoresist poisoning of a low-dielectric-constant insulator A method comprises forming a low-dielectric constant (low-k) layer over a semiconductor substrate, forming an anti-reflective layer over the low-k layer, forming at least one opening in the anti-reflective layer and in the low-k layer, forming a nitrogen-free liner ... | 02/06/2007 |
| 7163879 | Hard mask etch for gate polyetch A transistor gate structure that is free from notches is formed by using a hard mask. The hard mask has a bilayer structure of a BARC (bottom antireflective coating) over a silicon dioxide layer. A photoresist layer is formed over a portion corresponding to the gate... | 01/16/2007 |
| 6931619 | Apparatus for reshaping a patterned organic photoresist surface The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is fabricated using the patterned photoresist. In addition, the method may ... | 08/16/2005 |
| 6727566 | TRANSPARENT SUBSTRATE WITH CONDUCTIVE MULTILAYER ANTI REFLECTION FILM, TRANSPARENT TOUCH PANEL USING THE TRANSPARENT SUBSTRATE WITH MULTILAYER ANTI REFLECTION FILM AND ELECTRONIC APPARATUS USING THE TOUCH PANEL With objectives of providing with a transparent board with conductive multi-layer antireflection thin films, under condition of high transmissivity not only on a glass substrate but also on a non-glass transparent substrate with property of demanded electrical resis... | 04/27/2004 |
| 6703323 | Method of inhibiting pattern collapse using a relacs material A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material ... | 03/09/2004 |
| 6703672 | Polysilicon/amorphous silicon composite gate electrode A polysilicon/amorphous silicon composite layer for improved linewidth control in the patterning of gate electrodes, in the manufacture of metal oxide semiconductor (MOS) devices. The formation of a composite polysilicon/amorphous silicon gate in an integ... | 03/09/2004 |
| 6699641 | Photosensitive bottom anti-reflective coating Various circuit structures incorporating masks and anti-reflective coatings and methods of fabricating the same are provided. In one aspect, a circuit structure is provided that includes a substrate and a first photosensitive film on the substrate. The fi... | 03/02/2004 |
| 6690077 | Antireflective coating and field emission display device, semiconductor device and wiring line comprising same Titanium aluminum nitrogen ("Ti--Al--N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti--Al--N layer serves as a cap layer which prevents unwanted reflection of photoli... | 02/10/2004 |
| 6689682 | Multilayer anti-reflective coating for semiconductor lithography A multilayer electrically conductive stack is formed in a semiconductor device prior to one step of photolithography. In this multilayer electrically conductive stack, alternate layers of the stack contain materials that differ in their refractive indices... | 02/10/2004 |
| 6680252 | Method for planarizing barc layer in dual damascene process The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechani... | 01/20/2004 |
| 6677661 | Semiconductive wafer assemblies In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) enriching a portion of the thickness of the sil... | 01/13/2004 |
| 6673713 | Anti-reflective coatings and methods for forming and using same An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of ... | 01/06/2004 |
| 6669995 | Method of treating an anti-reflective coating on a substrate A method of treating an anti-reflective coating on a substrate. The method includes exposing the anti-reflective coating to a dosage of ultraviolet radiation sufficient to result in the direct removal of at least a portion of the exposed anti-reflective c... | 12/30/2003 |
| 6670284 | Method of decontaminating process chambers, methods of reducing defects in anti-reflective coatings, and resulting semiconductor structures A method for fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the anti-reflective coating is to be deposited. The anti-ref... | 12/30/2003 |
| 6670288 | Methods of forming a layer of silicon nitride in a semiconductor fabrication process In one aspect, the invention includes a semiconductor fabrication process, comprising: a) providing a substrate; b) forming a layer of silicon nitride over the substrate, the layer having a thickness; and c) enriching a portion of the thickness of the sil... | 12/30/2003 |
| 6670695 | Method of manufacturing anti-reflection layer An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxyni... | 12/30/2003 |
| 6664177 | Dielectric ARC scheme to improve photo window in dual damascene process This invention relates to a method of fabrication used for semiconductor integrated circuit devices, and more specifically, to improve the photolithography processing window of a multi-layered dual damascene process by using a dielectric anti-reflective c... | 12/16/2003 |
| 6664180 | Method of forming smaller trench line width using a spacer hard mask An exemplary method of forming trench lines includes providing a photoresist pattern over an anti-reflective coating (ARC) layer where the ARC layer is deposited over a layer of material; etching the ARC layer according to the photoresist pattern to form ... | 12/16/2003 |
| 6664201 | Method of manufacturing anti-reflection layer An anti-reflection layer and method of manufacture. A silicon substrate has a conductive layer formed thereon. Plasma-enhanced chemical vapor deposition is performed to form a graded silicon oxynitride layer over the conductive layer. During silicon oxyni... | 12/16/2003 |
| 6653735 | CVD silicon carbide layer as a BARC and hard mask for gate patterning A BARC comprising materials having a lower pinhole density than that of silicon oxynitride and materials having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of polysilicon than that of amorphous carbon is emplo... | 11/25/2003 |
| 6649519 | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a w... | 11/18/2003 |
| 6642152 | Method for ultra thin resist linewidth reduction using implantation The present invention relates to a system and a method for reducing the linewidth of ultra thin resist features. The present invention accomplishes this end by applying a densification process to an ultra thin resist having a thickness of less than about ... | 11/04/2003 |
| 6638441 | Method for pitch reduction A method for pitch reduction is disclosed. The method can form a pattern with a pitch 1/3 the original pitch formed by available photolithography technologies by only using one photo mask or one pattern transfer process, self-aligned etching back processe... | 10/28/2003 |
| 6635583 | Silicon carbide deposition for use as a low-dielectric constant anti-reflective coating The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. The same material may also be used as a barrier ... | 10/21/2003 |
| 6630397 | Method to improve surface uniformity of a layer of arc used for the creation of contact plugs In accordance with the objectives of the invention a new processing sequence is provided for the creation of a layer of ARC. A first layer of ARC is deposited over a supporting surface, a blanket etch is performed to the surface of the first layer of ARC,... | 10/07/2003 |
| 6624068 | Polysilicon processing using an anti-reflective dual layer hardmask for 193 nm lithography A lithographic method of forming submicron polysilicon features on a semiconductor substrate, including the steps of coating said substrate with an anti-reflective coating (ARC) comprising two layers having matched indices of refraction (n) and extinction... | 09/23/2003 |
