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| Number | Title | Issue Date |
| 7439196 | Method for manufacturing pattern formed structure The main object of the present invention is to provide a method for manufacturing efficiently a pattern formed structure which has a surface having a property-varied pattern and can be used to manufacture a color filter or the like. In order to achieve the ob... | 10/21/2008 |
| 7413922 | Fabricating method of a pixel structure A method of fabricating a pixel structure is disclosed. A substrate having a color filter layer thereon and a leveling layer further covers the color filter layer is provided. A first metal layer is formed over the leveling layer. The first metal layer is patterned ... | 08/19/2008 |
| 7381654 | Method for fabricating right-angle holes in a substrate A method is disclosed for forming right-angle contact/via holes for semiconductor devices. A device is provided on a substrate and covered with a first dielectric layer. A second dielectric layer having an etch rate different from that of the first layer is provided... | 06/03/2008 |
| 7368362 | Methods for increasing photo alignment margins Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ... | 05/06/2008 |
| 7368390 | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-l... | 05/06/2008 |
| 7335593 | Method of fabricating semiconductor device A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different prope... | 02/26/2008 |
| 7262129 | Minimizing resist poisoning in the manufacture of semiconductor devices The present invention provides a method for manufacturing an interconnect and a method for manufacturing an integrated circuit including the interconnect. The method of manufacturing an interconnect, among other steps, includes forming a via (160) in a substr... | 08/28/2007 |
| 7259106 | Method of making a microelectronic and/or optoelectronic circuitry sheet A circuitry sheet (322) comprising an electronic device layer stack (304) containing electronic devices, e.g., thin-film transistors, or portions thereof, formed by removing material from both sides of the device layer stack. The circuitry sheet may be... | 08/21/2007 |
| 7169716 | Photosensitive lacquer for providing a coating on a semiconductor substrate or a mask A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which s... | 01/30/2007 |
| 7145247 | Offset-bonded, multi-chip semiconductor device The present invention is aimed at bonding a lower chip and an upper chip through bumps in a highly reliable manner, while ensuring a sufficient area for an external connection terminal region, by offsetting the upper chip to the lower chip. The substrate 2 ha... | 12/05/2006 |
| 6699641 | Photosensitive bottom anti-reflective coating Various circuit structures incorporating masks and anti-reflective coatings and methods of fabricating the same are provided. In one aspect, a circuit structure is provided that includes a substrate and a first photosensitive film on the substrate. The fi... | 03/02/2004 |
| 6673706 | Method of forming a pattern using a photoresist without exposing the photoresist and silicidation method incorporating the same A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a phot... | 01/06/2004 |
| 6664194 | Photoexposure method for facilitating photoresist stripping There is first provided a substrate 10 and a target layer 12. There is then formed upon the target layer a patterned positive photoresist layer 14. There is then processed the target layer while employing the patterned positive photoresist layer as a mask... | 12/16/2003 |
| 6664011 | Hole printing by packing and unpacking using alternating phase-shifting masks A new method is provided for the creation of contact holes. The DOF and MEF of closely packed holes can be improved using Alternating Phase Shifting Mask (Alt PSM) for the exposure of the holes. However, Alt PSM are dependent on hole density or hole separ... | 12/16/2003 |
| 6660646 | Method for plasma hardening photoresist in etching of semiconductor and superconductor films A plasma photoresist hardening technique is provided to improve the etch resistance of a photoresist mask 26. The technique involves the formation of a thin passivation layer 26b on the photoresist mask 26 which substantially slows down the etching rate o... | 12/09/2003 |
| 6653058 | Methods for reducing profile variation in photoresist trimming A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a patterned photoresist mask. A layer comprised of polymer material is formed over the patterned photoresist mask. The layer compr... | 11/25/2003 |
| 6649525 | Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues... | 11/18/2003 |
| 6645682 | Thinner for rinsing photoresist and method of treating photoresist layer A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant o... | 11/11/2003 |
| 6642152 | Method for ultra thin resist linewidth reduction using implantation The present invention relates to a system and a method for reducing the linewidth of ultra thin resist features. The present invention accomplishes this end by applying a densification process to an ultra thin resist having a thickness of less than about ... | 11/04/2003 |
| 6642148 | RELACS shrink method applied for single print resist mask for LDD or buried bitline implants using chemically amplified DUV type photoresist The present invention generally relates to a method of forming a graded junction within a semiconductor substrate. A first masking pattern having a first opening characterized by a first lateral dimension is formed over the semiconductor substrate. The se... | 11/04/2003 |
| 6627360 | Carbonization process for an etch mask A method of forming an etch mask includes patterning a top surface of a photoresist layer, carbonizing the patterned top surface of the photoresist layer and selectively removing portions of the photoresist layer. Portions of the photoresist layer under t... | 09/30/2003 |
| 6610609 | Compatibilization treatment Disclosed are compositions and methods for improving compatibility of imaging layers with dielectric layers. Also disclosed are methods of reducing or eliminating poisoning of photoresists during electronic device manufacture.... | 08/26/2003 |
| 6593063 | Method of manufacturing a semiconductor device having an improved fine structure A first resist layer, capable of generating an acid, is formed on a semiconductor base layer and is developed in a shortened developing time than usual. The first resist pattern is covered with a second resist layer containing a material capable of crossl... | 07/15/2003 |
| 6479395 | Methods for forming openings in a substrate and apparatuses with these openings and methods for creating assemblies with openings Methods for forming openings having predetermined shapes in a substrate and apparatuses with these openings. The methods may be used to form assemblies which include the substrate with its openings and elements which are disposed in the openings. In one e... | 11/12/2002 |
| 6458516 | Method of etching dielectric layers using a removable hardmask A method of patterning a layer of dielectric material having a thickness greater than 1,000 Å, and typically a thickness greater than 5,000 Å. The method is particularly useful for forming a high aspect ratio via or a high aspect ratio contact including... | 10/01/2002 |
| 6454956 | Structuring method A method for structuring at least one layer to be structured. First, a mask is applied to the layer and the layer is structured using the mask. After the structuring step, the mask is then removed, while leaving behind redepositions of the material of the... | 09/24/2002 |
| 6448183 | Method of forming contact portion of semiconductor element Disclosed is a method for forming a contact portion of a semiconductor element. An exemplary method includes the steps of depositing an insulation layer on a lower thin film on which there is formed a semiconductor element electrode or a metal wiring patt... | 09/10/2002 |
| 6448164 | Dark field image reversal for gate or line patterning A method of forming either a gate pattern or a line pattern in a resist by using a dark field mask and a combination of a negative photoresist and a positive photoresist. The dark field mask is used to create a hole within the positive photoresist, by exp... | 09/10/2002 |
| 6432619 | Method for reducing photolithographic steps in a semiconductor interconnect process A method for forming a photomask including applying photoresist to a semiconductor substrate, exposing a first area of the photoresist to a first dosage of radiation, and exposing a second area of the photoresist to a second dosage of radiation. The first... | 08/13/2002 |
| 6420766 | Transistor having raised source and drain The preferred embodiment of the present invention provides a transistor structure and method for fabricating the same that overcomes the disadvantages of the prior art. In particular, the preferred structure and method results in lower leakage and junctio... | 07/16/2002 |
| 6395457 | Method for manufacturing a semiconductor device A method for manufacturing a liquid crystal display, includes the steps of forming a first metal layer on a transparent substrate, forming a first photo-resist pattern on the first metal layer by using a first mask with a predetermined pattern, forming a ... | 05/28/2002 |
| 6391800 | Method for patterning a substrate with photoresist A method for patterning a substrate having a surface with high aspect ratio topography with a photoresist is described. Specifically the surface of a semiconductor substrate is pre-wetted with a solvent solution to form a liquid solvent film. An additiona... | 05/21/2002 |
| 6358793 | Method for localized masking for semiconductor structure development Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize loca... | 03/19/2002 |
| 6340635 | Resist pattern, process for the formation of the same, and process for the formation of wiring pattern A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a r... | 01/22/2002 |
| 6337172 | Method for reducing photolithographic steps in a semiconductor interconnect process A semiconductor wafer having a first layer and overlying insulating layer receives a photoresist layer. A first photoresist area is exposed to light having a first dosage, while a second, adjacent photoresist area is concurrently exposed to light having a... | 01/08/2002 |
| 6331380 | Method of pattern etching a low K dielectric layer A first embodiment of the present invention pertains to a method of patterning a semiconductor device conductive feature while permitting easy removal of any residual masking layer which remains after completion of the etching process. A multi-layered mas... | 12/18/2001 |
| 6315912 | Process for forming a lower electrode of a cylindrical capacitor In a process for forming a lower electrode of a cylindrical capacitor in a semiconductor memory, a polysilicon film is formed on an insulator film to cover an inner surface of a hole formed in the insulator film. An exposed surface of the polysilicon film... | 11/13/2001 |
| 6309926 | Thin resist with nitride hard mask for gate etch application A method of forming a gate structure is provided. In the method, a nitride layer is formed on a gate material layer. An ultra-thin photoresist layer is formed on the nitride layer. The ultra-thin photoresist layer is patterned with short wavelength radiat... | 10/30/2001 |
| 6277543 | Method for forming features using frequency doubling hybrid resist and device formed thereby The preferred embodiment of the present invention overcomes the limitations of the prior art by providing a method to form unlinked features using hybrid resist. The method uses a trim process in order to trim the linking features from the "loops" formed ... | 08/21/2001 |
| 6255178 | Method for forming transistors with raised source and drains and device formed thereby The preferred embodiment of the present invention provides a transistor structure and method for fabricating the same that overcomes the disadvantages of the prior art. In particular, the preferred structure and method results in lower leakage and junctio... | 07/03/2001 |
