Did You Know...
...that the Slinky toy was the result of a failed attempt by engineer Richard James to produce an antivibration device for ship instruments? His goal was to develop a spring that would instantaneously counterbalance the wave motion that rocks a ship at sea. Instead, he developed the Slinky.
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| Number | Title | Issue Date |
| 7439144 | CMOS gate structures fabricated by selective oxidation A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial polymer containing silicon that is deposited over a gate conductor layer and covered by a cover layer. The sacrificial polymer layer is patterned with convention... | 10/21/2008 |
| 7316784 | Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method o... | 01/08/2008 |
| 7220612 | Liquid crystal display device and fabricating method thereof A thin film transistor substrate and a fabricating method thereof for simplifying a process are disclosed. In a liquid crystal display device according to the present invention, a gate line is provided on a substrate. A data line crosses the gate line with having a ... | 05/22/2007 |
| 7183224 | Liftoff process for thin photoresist A method is invented for processing a thin-film head/semiconductor wafer. A layer of polymer is applied onto a wafer. A layer of dielectric material is added above the polymer layer. A layer of photoresist is added above the dielectric layer. The photoresist layer i... | 02/27/2007 |
| 7008810 | Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence A method for fabricating at least one mesa or ridge structure in a layer or layer sequence, in which a sacrificial layer (4) is applied and patterned above the layer or layer sequence. A mask layer is applied and patterned above the sacrificial layer for defi... | 03/07/2006 |
| 6458682 | Method of manufacturing a bump electrode semiconductor device using photosensitive resin An electrode pad, a surface protection film, an inter-layer insulation film, an undercoat metal layer, and a rewiring layer are formed in that order on top of an insulation film formed on a wafer. A liquid photosensitive resin film and a solid photosensit... | 10/01/2002 |
| 6440846 | Method for forming semiconductor device In a method for forming a semiconductor device, when polishing the wafer, the photo-resin so as to cure with ultraviolet is buried. Then, after polishing and forming the back side electrode, the photo-resin is removed by organic solvent. Accordingly, the ... | 08/27/2002 |
| 6420252 | Methods of forming robust metal contacts on compound semiconductors A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern an... | 07/16/2002 |
| 6340626 | Method for making a metallic pattern by photolithography A method for making a metallic pattern that includes redundant photolithography to significantly reduce the occurrence of defects in the metal layer that defines the desired metallic pattern. The presence of contaminants in the photoresist layer during ex... | 01/22/2002 |
| 6340635 | Resist pattern, process for the formation of the same, and process for the formation of wiring pattern A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a r... | 01/22/2002 |
| 6156672 | Method of forming dielectric thin film pattern and method of forming laminate pattern comprising dielectric thin film and conductive thin film A method of forming a dielectric thin film pattern, comprises the steps of: depositing a dielectric thin film on a substrate having a resist pattern thereon by a vapor deposition method, wherein as a material for the dielectric thin film, at least one of ... | 12/05/2000 |
| 6156665 | Trilayer lift-off process for semiconductor device metallization The specification describes a trilevel resist technique for defining metallization patterns by lift-off. The trilevel resist comprises two standard photoresist levels separated by a thin silicon oxide layer with approximate composition SiO2.... | 12/05/2000 |
| 6080514 | Fabrication method of mask for semiconductor device A fabrication method of a mask for a semiconductor device includes the steps of: applying a first photoresist film on a silicone wafer; sequentially stacking a first insulation film, a second insulation film, and a second photoresist film on the first pho... | 06/27/2000 |
| 5981319 | Method of forming a T-shaped gate The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated int... | 11/09/1999 |
| 5953595 | Method of manufacturing thin film transistor The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the grou... | 09/14/1999 |
| 5903023 | Semiconductor device, method of fabricating the same, and sputtering apparatus A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so a... | 05/11/1999 |
| 5895271 | Metal film forming method A metal film forming method by which a metal film having a desired pattern can be formed with good reproducibility and satisfactory precision. In a metal film forming method for forming a metal film into the desired pattern on a surface of an object by th... | 04/20/1999 |
| 5891804 | Process for conductors with selective deposition This is a method of forming a conductor 26 on an interlevel dielectric layer 12 which is over an electronic microcircuit substrate 10, and the structure produced thereby. The method utilizes: forming an intralevel dielectric layer 14 over the interlevel d... | 04/06/1999 |
| 5888892 | Metal layer pattern forming method Disclosed is a metal layer pattern forming method which easily allows lift-off. The thickness of the photoresist layer is not less than double the thickness of the metal layer, and the maximum temperature that the surface of the substrate to be processed ... | 03/30/1999 |
| 5856067 | Contact photolithographic process for realizing metal lines on a substrate by varying exposure energy The present invention concerns a contact photolithographic process for realizing submicrometer metal lines, in particular lines for devices such as FETs, MESFETs and ICs, with width different from the pattern width on the masks, through contact photolitho... | 01/05/1999 |
| 5804474 | Method for forming a V-shaped gate electrode in a semiconductor device, and the structure of the electrode A method for forming a V-shaped gate electrode on a semiconductor substrate includes the following steps: A first gate opening is formed in a first resist between a source and a drain formed on a semiconductor substrate, and dummy openings are formed near... | 09/08/1998 |
| 5773333 | Method for manufacturing self-aligned T-type gate Method for manufacturing a self-aligned T-type gate in which an ohmic electrode and a T-type gate electrode are simultaneously disposed and its excellent reproductivity is obtained and the overall process is simplified is disclosed, including the steps of... | 06/30/1998 |
| 5766808 | Process for forming multilayer lift-off structures A process is disclosed for forming multilayered polyimide structure from negative photosensitive polyimide precursors. An initial polyimide layer is deposited and imagewise exposed. The unexposed portions of the initial polyimide layer are inhibited and t... | 06/16/1998 |
| 5712175 | Method of making semiconductor device having a schottky gate electrode A method of manufacturing a semiconductor device using an inexpensive apparatus such as an i-line stepper, with a high throughput and a high yield at a low cost. Exemplary embodiments of the method include a step for forming a first layer of an insulative... | 01/27/1998 |
| 5705432 | Process for providing clean lift-off of sputtered thin film layers A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on ... | 01/06/1998 |
| 5652179 | Method of fabricating sub-micron gate electrode by angle and direct evaporation Disclosed is a method of fabricating semiconductor devices having sub-micron gate electrodes using angle and direct evaporation techniques. A first and second photoresist layer are formed atop a substrate and the second layer is selectively processed to f... | 07/29/1997 |
| 5587328 | Method for manufacturing semiconductor device A semiconductor device manufacturing method with which a GaAs MESFET and an integrated circuit using the same can be manufactured cheaply and with high yield by accurately forming a mushroom-shaped gate electrode with inexpensive equipment and a short pro... | 12/24/1996 |
| 5563079 | Method of making a field effect transistor A method of making a FET includes the steps of forming a source and a drain at respective edges of the surface of a semiconductor substrate, forming a first insulation film on the whole surfaces of the semiconductor substrate, the source, and the drain, c... | 10/08/1996 |
| 5541139 | Method of manufacturing a radiation-emitting semiconductor diode The invention relates to a method of manufacturing a radiation-emitting semiconductor diode (10) whereby a sacrificial layer (1) comprising a polymer is provided on a first side face (11) of a semiconductor body (20) which contains at least one radiation-... | 07/30/1996 |
| 5539222 | High yield sub-micron gate FETs Yields of FETs such as HEMTs are significantly improved by establishing an elongate gate contact opening in a patterning material with the patterning material overhanging the opening along both its elongate sides and its ends. A contact metal is next evap... | 07/23/1996 |
| 5503961 | Process for forming multilayer lift-off structures A process is disclosed for forming multilayered polyimide structure from negative photosensitive polyimide precursors. An initial polyimide layer is deposited and imagewise exposed. The unexposed portions of the initial polyimide layer are inhibited and t... | 04/02/1996 |
| 5432119 | High yield electron-beam gate fabrication method for sub-micron gate FETS Yields of FETs such as HEMTs are significantly improved by establishing an elongate gate contact opening in a patterning material with the patterning material over-hanging the opening along both its elongate sides and its ends. A contact metal is next eva... | 07/11/1995 |
| 5426071 | Polyimide copolymer film for lift-off metallization A polyimide copolymer derived from 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride, oxydiphthalic dianhydride, m-phenylene diamine and 4,4'-oxydianiline, for use as a high-temperature resistant lift-off layer in the fabrication of integrated ... | 06/20/1995 |
| 5360697 | Forming self-aligned diffusion barriers in solid state devices using lift-off process A conductive self-aligned diffusion barrier is formed by using a self-aligned lift-off process.... | 11/01/1994 |
| 5334542 | Method of forming T-shaped electrode A lower mask layer and a first resist layer are formed on a substrate. The first resister is exposed with the use of an exposure mask having a phase shifter. A part of the first resist layer corresponding to the edge of the phase shifter becomes an unexpo... | 08/02/1994 |
| 5277749 | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps A layer of photoresist provides a stress relief (or cushion) layer between a lift-off polymer layer and a barrier of multi-level lift-off structures. When multiple evaporation steps are required using the same lift-off pattern, the adhesion between organo... | 01/11/1994 |
| 5240878 | Method for forming patterned films on a substrate A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist lay... | 08/31/1993 |
| 5234539 | Mechanical lift-off process of a metal layer on a polymer A lift-off process for removing a portion of a metal layer (4). The metal layer is formed on a dielectric polymer substrate with interposition of a corresponding portion of an intermediate layer (2). This process comprises the steps of selecting the mater... | 08/10/1993 |
| 5212117 | Method of manufacturing a semiconductor device contact structure using lift A method of manufacturing a semiconductor device comprising the steps of forming a first insulating layer on a semiconductor substrate, forming a resist film sensitive to electron beams on the first insulating layer, applying electron beams onto a predete... | 05/18/1993 |
| 5209815 | Method for forming patterned films on a substrate A method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone... | 05/11/1993 |
