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Class 257/E21.023 - Making mask on semicond uctor body for further photolithographic processing (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.002. This subclass
No. of patents: 45
Last issue date: 10/21/2008


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NumberTitleIssue Date
7439144CMOS gate structures fabricated by selective oxidation
A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial polymer containing silicon that is deposited over a gate conductor layer and covered by a cover layer. The sacrificial polymer layer is patterned with convention...
10/21/2008
7439187Grayscale reticle for precise control of photoresist exposure
A method of fabricating a grayscale reticule includes preparing a quartz substrate; depositing a layer of silicon-rich oxide on the quartz substrate; depositing a layer of silicon nitride as an oxidation barrier layer on the silicon-rich oxide layer; depositing and ...
10/21/2008
7425508Liquid crystal display device and fabricating method thereof, and thin film patterning method applied thereto
A liquid crystal display device, including: a gate line on a substrate; a data line crossing the gate line with a gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern w...
09/16/2008
7413962Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatus
A method for forming a semiconductor device comprises forming a layer to be etched, then forming a hard mask layer over the layer to be etched. The hard mask is etched to form an opening defined by first and second cross-sectional sidewalls in the hard mask layer. I...
08/19/2008
7410891Method of manufacturing a superjunction device
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etche...
08/12/2008
7393728Method of manufacturing an array substrate of a transflective liquid crystal display
A method of manufacturing an array substrate of a transflective liquid crystal display is provided. Utilizing backward exposure and half-tone photo-mask to reduce the number of photo-masks used in the manufacturing process, only three to four photo-masks are used to...
07/01/2008
7384874Method of forming hardmask pattern of semiconductor device
A method of forming a hardmask pattern over a semiconductor device semiconductor device includes forming a first hardmask layer over a semiconductor substrate. First and second structures are formed over the first hardmask layer, the first and second structures form...
06/10/2008
7386182Optimization of multiple feature lithography
According to one embodiment of the invention, a method for enhancing multiple feature lithography is provided. The method includes generating a plurality of maps each associated with a particular one of a plurality of circuit features. Each map maps an illumination ...
06/10/2008
7381644Pulsed PECVD method for modulating hydrogen content in hard mask
A method for forming a PECVD deposited ashable hardmask (AHM) with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks having the property of high selectivity of the hard mask film to the underlying...
06/03/2008
7381655Mandrel/trim alignment in SIT processing
Disclosed herein is an imaging method for patterning component shapes (e.g., fins, gate electrodes, etc.) into a substrate. By conducting a trim step prior to performing either an additive or subtractive sidewall image transfer process, the method avoids the formati...
06/03/2008
7378289Method for forming photomask having test patterns in blading areas
A photomask and a method for forming a photomask are disclosed in which die regions that define features for a process step of a semiconductor fabrication process are formed on a photomask and a test pattern for a different process step is formed in a blading area o...
05/27/2008
7368362Methods for increasing photo alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ...
05/06/2008
7361523Three-axis accelerometer
The invention comprises a method of fabricating a three-axis accelerometer. A first wafer having a first and a second major surface provided with etching at least two cavities in the first major surface of the first wafer and patterning metal onto the first major su...
04/22/2008
7361569Methods for increasing photo-alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ...
04/22/2008
7354808Resist composition and method for manufacturing semiconductor device using the same
An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a ...
04/08/2008
7354781Method of manufacturing field emission device
A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single photoresist mask. The photoresist has a solubility to a solvent by post-exposure...
04/08/2008
7329936Mask for sequential lateral solidification and crystallization method using thereof
A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from ea...
02/12/2008
7327013Stencil mask with charge-up prevention and method of manufacturing the same
A drive unit is described for switching circuit breakers on and off, in particular disconnecting switches and/or grounding switches of medium-voltage switchgear. The drive unit includes a reversible d.c. motor and a switching device containing two separately drivabl...
02/05/2008
7314773Low resistance thin film organic solar cell electrodes
A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive materi...
01/01/2008
7303994Process for interfacial adhesion in laminate structures through patterned roughing of a surface
The present invention relates to a process for improved interfacial adhesion of dielectrics using patterned roughing. Improved adhesion strength between layers and substrates can be achieved through increasing the roughness of the interface between the materials. Ro...
12/04/2007
7271094Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
The present invention is a multi-layer shadow mask and method of use thereof. The multi-layer shadow mask includes a sacrificial mask bonded to a deposition mask. The sacrificial mask provides protection against an accumulation of evaporant on the deposition mask wh...
09/18/2007
7268054Methods for increasing photo-alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ...
09/11/2007
7259107Method of forming isolated features of semiconductor devices
A method of forming isolated features of semiconductor devices is disclosed. A first hard mask is deposited over a material layer to be patterned, and a second hard mask is deposited over the first hard mask. The second hard mask is patterned with a pattern for an a...
08/21/2007
7247574Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target ...
07/24/2007
7242100Method for manufacturing semiconductor device with plural semiconductor chips
A method for manufacturing a semiconductor device with plural semiconductor chips is provided. The method includes the step of attaching a second semiconductor chip to a first surface of a supporting member in a manner such that a third set of electrodes are wireles...
07/10/2007
7189646Method of enhancing the adhesion between photoresist layer and substrate and bumping process
A method of enhancing the adhesion between photoresist material and a substrate that can be applied to fabricate bumps on the substrate is provided. The bump fabrication process uses at least photoresist materials each having a different viscosity. A photoresist mat...
03/13/2007
7176114Method of depositing patterned films of materials using a positive imaging process
The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developin...
02/13/2007
7160814Method for forming contact in semiconductor device
Disclosed is a method for forming a contact in a semiconductor device. The method includes the steps of: forming a bit line on a substrate; forming an oxide layer made of high density plasma (HDP) oxide on a substrate structure including the bit line and the substra...
01/09/2007
7151040Methods for increasing photo alignment margins
Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ...
12/19/2006
7132361System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
Via holes are formed in a continuous inline shadow mask production system by depositing a first conductor layer and subsequently depositing a first insulator layer over a portion of the first conductor layer. The first insulator layer is deposited in a manner to def...
11/07/2006
7129176Optical device having micro lens array and method for manufacturing the same
An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical ...
10/31/2006
7122453Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a subresolution assist feature that is transmissive of at least a portion of the radiation. The subresolution assist feature alters a patt...
10/17/2006
7122455Patterning with rigid organic under-layer
For patterning an IC (integrated circuit) material, a rigid organic under-layer is formed over the IC material, and the rigid organic under-layer is patterned to form a rigid organic mask structure. In addition, the rigid organic mask structure is trimmed to lower a...
10/17/2006
7109110Method of manufacturing a superjunction device
A partially manufactured semiconductor device includes a semiconductor substrate. The device includes a first oxide layer formed on the substrate, with a mask placed over the oxide-covered substrate, a plurality of first trenches and at least one second trench etche...
09/19/2006
7084445High-throughput thin-film fabrication vacuum flange
A mechanism and methodology is provided for performing high-throughput thin-film experimentation with the use and integration of a heater. A single flange assembly contains an automated two-dimensional shutter system (which provides variable masking schemes for spat...
08/01/2006
6436220Process for the collective removal of resist material and side wall protective film
The present invention is intended to collectively remove unnecessary resist material and side wall protective film after dry etching by side wall protection process, making it possible to simplify the process for the preparation of semiconductors, etc. Th...
08/20/2002
6358763Methods of forming a mask pattern and methods of forming a field emitter tip mask
Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comp...
03/19/2002
6165878Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device which prevents a short circuit between a gate electrode and a diffusion layer region if a contact hole is shifted from its proper position. A material having an etch selectivity to an interlayer insulation ...
12/26/2000
6143580Methods of forming a mask pattern and methods of forming a field emitter tip mask
Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comp...
11/07/2000
6042738Pattern film repair using a focused particle beam system
The present invention generally provides methods for employing a focused particle beam system in the removal of an excess portion from a workpiece having an opaque film patterned on a substrate and more particularly provides methods of gas-assisted etchin...
03/28/2000
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