Bizarre Patents
Pneumatic Shoe Lacing Apparatus
This invention provides a pneumatic shoe lacing apparatus for the pneumatic lacing of shoe.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7439151 | Method and structure for integrating MIM capacitors within dual damascene processing techniques A method for integrating the formation of metal-insulator-metal (MIM) capacitors within dual damascene processing includes forming a lower interlevel dielectric (ILD) layer having a lower capacitor electrode and one or more lower metal lines therein, the ILD layer h... | 10/21/2008 |
| 7414296 | Method of manufacturing a metal-insulator-metal capacitor The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal l... | 08/19/2008 |
| 7385240 | Storage cell capacitor compatible with high dielectric constant materials An integrated circuit structure includes a digit line and an electrode adapted to be part of a storage cell capacitor and includes a barrier layer interposed between a conductive plug and an oxidation resistant layer. An insulative layer protects sidewalls of the ba... | 06/10/2008 |
| 7384808 | Fabrication method of high-brightness light emitting diode having reflective layer A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a firs... | 06/10/2008 |
| 7375002 | MIM capacitor in a semiconductor device and method therefor A MIM capacitor is formed over one or more metal interconnect layers in a semiconductor device. The capacitor has a lower plate electrode and an upper plate electrode. An insulator is formed between the plate electrodes. Prior to forming the first plate electrode a ... | 05/20/2008 |
| 7375000 | Discrete on-chip SOI resistors A semiconductor resistor, method of making the resistor and method of making an IC including resistors. Buried wells are formed in the silicon substrate of a silicon on insulator (SOI) wafer. At least one trench is formed in the buried wells. Resistors are formed al... | 05/20/2008 |
| 7371598 | Wiring substrate and method of manufacturing thereof, and thin film transistor and method of manufacturing thereof The invention includes a first step for forming a first conductive layer composed of a high melting point metal to be in contact with an insulating layer; and a second step for forming a second conductive layer by discharging a composition containing a conductive ma... | 05/13/2008 |
| 7303936 | Method for forming anti-stiction bumps on a micro-electro mechanical structure A technique for forming anti-stiction bumps on a bottom surface of a micro-electro mechanical (MEM) structure includes a number of process steps. The MEM structure is fabricated from an assembly that includes a support substrate bonded to a single-crystal semiconduc... | 12/04/2007 |
| 7164203 | Methods and procedures for engineering of composite conductive by atomic layer deposition A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer b... | 01/16/2007 |
| 6660611 | Method to form a corrugated structure for enhanced capacitance with plurality of boro-phospho silicate glass including germanium A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, co... | 12/09/2003 |
| 6627938 | Capacitor constructions In one aspect, the invention encompasses a method of forming a capacitor. A mass is formed over an electrical node. An opening is formed within the mass. The opening has a lower portion proximate the node and an upper portion above the lower portion. The ... | 09/30/2003 |
| 6624018 | Method of fabricating a DRAM device featuring alternate fin type capacitor structures A process for fabricating an alternate fin type capacitor structure, used to increase capacitor surface area has been developed. The process features the formation of fin shaped, storage node structures, located in fin type capacitor openings, which are i... | 09/23/2003 |
| 6620675 | Increased capacitance trench capacitor Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: forming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into ... | 09/16/2003 |
| 6617208 | High capacitance damascene capacitors The invention describes a high capacitance damascene capacitor. A etch-stop/capacitor dielectric layer 60 is sandwiched between two conductive plates 40 and 75 to form an integrated circuit capacitor. One metal plate 40 is copper formed using a damascene ... | 09/09/2003 |
| 6586312 | Method for fabricating a DRAM capacitor and device made The present invention discloses a method for forming a DRAM capacitor that has improved charge storage capacity by first alternatingly depositing layers of BPTEOS oxide and PETEOS oxide onto a semiconductor substrate and then forming a contact hole throug... | 07/01/2003 |
| 6555433 | Method of manufacture of a crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor In this process, a capacitor core is formed on a semiconductor device with a first conductive sublayer in contact with a plug. First form a stack of alternately doped and undoped oxide layers on the sublayer with the stack comprising a bottom layer formed... | 04/29/2003 |
| 6528327 | Method for fabricating semiconductor memory device having a capacitor A contact plug is formed in a contact hole, which has been formed through a passivation film on a substrate, so that a recess is left over the contact plug. Then, the passivation film is dry-etched so that the opening of the recess is expanded or that the... | 03/04/2003 |
| 6518125 | Method for forming flash memory with high coupling ratio First of all, a semiconductor substrate has the poly regions thereon. Then the souse/drain regions are formed in the semiconductor substrate by performing the ion-implant method. Next, the dielectric layers are formed on the souse/drain regions and betwee... | 02/11/2003 |
| 6476437 | Crown or stack capacitor with a monolithic fin structure A capacitor core is formed on a semiconductor device with a first conductive layer in contact with a plug. A mold is formed from a stack of alternately doped and undoped silicon dioxide layers on the sublayer with the stack comprising a bottom layer forme... | 11/05/2002 |
| 6437385 | Integrated circuit capacitor Use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates. The films may be undercut by d... | 08/20/2002 |
| 6429087 | Methods of forming capacitors In one aspect, the invention encompasses a method of forming a capacitor. A mass is formed over an electrical node. An opening is formed within the mass. The opening has a lower portion proximate the node and an upper portion above the lower portion. The ... | 08/06/2002 |
| 6403440 | Method for fabricating a stacked capacitor in a semiconductor configuration, and stacked capacitor fabricated by this method A method for fabricating a stacked capacitor in a semiconductor configuration, in which one electrode of the stacked capacitor is connected via a terminal region of a first conductivity type to a source or drain of a transistor. The semiconductor configur... | 06/11/2002 |
| 6399980 | Fabrication of a T-shaped capacitor A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a f... | 06/04/2002 |
| 6399437 | Enhanced side-wall stacked capacitor A method of forming a stacked capacitor having improved capacitance in a dynamic random access memory device is provided wherein and additional pad polysilicon layer is deposited prior to the forming of the capacitor cell contact area such that the side-w... | 06/04/2002 |
| 6395602 | Method of forming a capacitor A method of forming a capacitor includes, a) providing a node to which electrical connection to a first capacitor plate is to be made; b) then, providing a finned lower capacitor plate in ohmic electrical connection with the node using no more than one ph... | 05/28/2002 |
| 6388284 | Capacitor structures Integrated circuitry capacitors and methods of forming the same are described. In accordance with one implementation, a capacitor plate is formed and a conductive layer of material is formed thereover. Preferably, the conductive layer of material is more ... | 05/14/2002 |
| 6376303 | Method of manufacturing a capacitor having oxide layers with different impurities and method of fabricating a semiconductor device comprising the same A method of manufacturing a capacitor having a high storage capacitance and a method of fabricating semiconductor devices incorporating the same include measures to ensure that the substrate and/or components of the device are not thermally damaged during... | 04/23/2002 |
| 6376326 | Method of manufacturing DRAM capacitor A method of manufacturing a dynamic random access memory capacitor. To form the lower electrode of the capacitor involves using two different materials each having a different etching rate to form an alternately laid stack above a substrate. Differences i... | 04/23/2002 |
| 6368908 | Method of fabricating dynamic random access memory capacitor A method of fabricating a capacitor includes formation of a stacked layer formed by alternately forming conductive layers and isolation layers and then patterning these layers to form a stacked layer. An opening is formed above the source/drain region. A ... | 04/09/2002 |
| 6346455 | Method to form a corrugated structure for enhanced capacitance A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprising a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, c... | 02/12/2002 |
| 6344392 | Methods of manufacture of crown or stack capacitor with a monolithic fin structure made with a different oxide etching rate in hydrogen fluoride vapor A capacitor core is formed on a semiconductor device with a first conductive layer in contact with a plug. A mold is formed from a stack of alternately doped and undoped silicon dioxide layers on the sublayer with the stack comprising a bottom layer forme... | 02/05/2002 |
| 6323100 | Method for manufacturing a semiconductor device In a semiconductor memory having a cylindrical storage electrode which is electrically connected to a semiconductor substrate through a contact hole formed to penetrate through an insulating film formed on the semiconductor substrate, the cylindrical stor... | 11/27/2001 |
| 6319770 | Method for fabricating a bottom electrode of a dynamic random access memory capacitor The present invention provides a method for fabricating a bottom electrode of a dynamic random access memory (DRAM) capacitor. First, a first sacrificial layer, an intermediate layer and a second sacrificial layer are sequentially formed on a substrate. T... | 11/20/2001 |
| 6315912 | Process for forming a lower electrode of a cylindrical capacitor In a process for forming a lower electrode of a cylindrical capacitor in a semiconductor memory, a polysilicon film is formed on an insulator film to cover an inner surface of a hole formed in the insulator film. An exposed surface of the polysilicon film... | 11/13/2001 |
| 6312986 | Concentric container fin capacitor and method A container capacitor and method having an internal concentric fin. In one embodiment, the finned capacitor is a stacked container capacitor in a dynamic random access memory circuit. The finned container capacitor provides a high storage capacitance with... | 11/06/2001 |
| 6300217 | Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer wi... | 10/09/2001 |
| 6294437 | Method of manufacturing crown-shaped DRAM capacitor A method of manufacturing a crown-shaped DRAM capacitor. A silicon oxide layer and a silicon nitride layer are sequentially formed over a substrate. A conductive plug passing through the silicon oxide layer and the silicon nitride layer is formed. A first... | 09/25/2001 |
| 6291289 | Method of forming DRAM trench capacitor with metal layer over hemispherical grain polysilicon Integrated circuitry capacitors and methods of forming the same are described. In accordance with one implementation, a capacitor plate is formed and a conductive layer of material is formed thereove. Preferably, the conductive layer of material is more c... | 09/18/2001 |
| 6274427 | Method of manufacturing a DRAM capacitor A capacitor is provided, which makes it easy to increase the opposing area size between the lower and upper electrode in spite of miniaturization, and which ensures a desired capacitance value large enough for stable operation of a semiconductor memory de... | 08/14/2001 |
| 6271085 | Method for forming a bottom electrode of a storage capacitor The present invention provides a method of forming an electrode, comprising the steps of: forming a dummy electrode having an uneven side face; forming a template insulating film which completely buries the dummy electrode; removing the dummy electrode wi... | 08/07/2001 |
