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| Number | Title | Issue Date |
| 7417271 | Electrode structure having at least two oxide layers and non-volatile memory device having the same An electrode structure having at least two oxide layers that more reliably switch and operate without the use of additional devices and a non-volatile memory device having the same are provided. The electrode structure may include a lower electrode, a first oxide la... | 08/26/2008 |
| 7414296 | Method of manufacturing a metal-insulator-metal capacitor The present invention provides method of manufacturing a metal-insulator-metal capacitor (100). A method of manufacturing includes depositing a first refractory metal layer (105) over a semiconductor substrate (110). The first refractory metal l... | 08/19/2008 |
| 7410510 | Process of producing activated carbon for electrode of electric double layer capacitor A process for producing an activated carbon for an electrode of an electric double-layer capacitor, includes a step of subjecting a carbonized material to an alkali activating treatment, wherein the carbonized material has an average true specific gravity of 1.450 t... | 08/12/2008 |
| 7407520 | Method of making a multi-electrode double layer capacitor having hermetic electrolyte seal A long life double layer capacitor and method of making the same including a case and a first terminal with an electrically insulating hermitic seal interposed between the first terminal and the case. A first current collector foil is electrically coupled to an inte... | 08/05/2008 |
| 7399704 | Fabrication method of a semiconductor device using liquid repellent film In the case where a contact hole is formed by a conventional process of the semiconductor device fabrication, a resist is required to be formed almost entirely over a substrate in order to form the resist over the film where the contact hole is not formed. According... | 07/15/2008 |
| 7387929 | Capacitor in semiconductor device and method of manufacturing the same The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formati... | 06/17/2008 |
| 7387928 | Device and method for making air, gas or vacuum capacitors and other microwave components A device and method for making a capacitor and other high frequency and/or microwave components. In particular, an air dielectric capacitor has a first electrode and a second electrode that are spaced apart, planar and each of a different size or area. The first ele... | 06/17/2008 |
| 7378682 | Memory element using active layer of blended materials The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive laye... | 05/27/2008 |
| 7371651 | Flat-type capacitor for integrated circuit and method of manufacturing the same Embodiments of the invention provide flat-type capacitors that prevent degradation of the dielectric layer, thereby improving the electrical properties of the capacitor. The capacitor includes a lower interconnection formed in a predetermined portion of a semiconduc... | 05/13/2008 |
| 7348266 | Method and apparatus for a metallic dry-filling process An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the siz... | 03/25/2008 |
| 7329548 | Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor A method of fabricating a conductive metal oxide gate ferroelectric memory transistor includes forming an oxide layer a substrate and removing the oxide layer in a gate area; depositing a conductive metal oxide layer on the oxide layer and on the exposed gate area; ... | 02/12/2008 |
| 7329572 | Method of forming PIP capacitor A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a dielectric layer over the lower electrode, forming a second polysilicon lay... | 02/12/2008 |
| 7320924 | Method of producing a chip-type solid electrolytic capacitor A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The capacitor elements are bonded to each other by a bonding agent such as a s... | 01/22/2008 |
| 7276091 | Method of producing polymer capacitor by forming micropore in ion exchange membrane and polymer capacitor produced thereby A method of producing a polymer capacitor includes forming a first electrode on a surface of a first ion exchange resin solid and coating a mixture of an ion exchange resin solution and a salt on the other surface of the first resin; putting a second ion exchange re... | 10/02/2007 |
| 7273778 | Method of electroplating a substance over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 09/25/2007 |
| 7273802 | Methods for consolidating previously unconsolidated conductive material to form conductive structures or contact pads or secure conductive structures to contact pads Methods for fabricating conductive structures on contact pads of semiconductor device components or other electronic components and for securing conductive structures to contact pads include directing consolidating energy toward unconsolidated conductive material. A... | 09/25/2007 |
| 7271083 | One-transistor random access memory technology compatible with metal gate process One-transistor RAM technology compatible with a metal gate process fabricates a metal gate electrode formed of the same metal material as a top electrode of a MIM capacitor embedded isolation structure. A gate dielectric layer is formed of the same high-k dielectric... | 09/18/2007 |
| 7271050 | Silicon nanocrystal capacitor and process for forming same A storage capacitor plate for a semiconductor assembly comprising a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjac... | 09/18/2007 |
| 7256072 | Semiconductor device, electronic device, electronic apparatus, and method of manufacturing semiconductor device A method is provided to suppress detachment between semiconductor packages while preventing dislocation at the time of mounting a stacked semiconductor package on a motherboard. Semiconductor packages PK1 and PK2 are bonded to each other through protru... | 08/14/2007 |
| 7256147 | Porous body and manufacturing method therefor It is an object of the present invention to provide a porous body containing an oxide semiconductor in which more efficient photocatalytic reactions and photoelectrode reactions occur. The present invention relates to a porous body having a network structure skeleto... | 08/14/2007 |
| 7247177 | Production method for electric double-layer capacitor A method of manufacturing electric double layer capacitors is disclosed. The method assumes a model in which solute is dissolved in solvent before preparing electrolyte, and estimates a withstanding voltage through a simulation. The electrolyte, of which withstandin... | 07/24/2007 |
| 7244279 | Use of poly(alkylene) carbonates in the manufacture of valve metal anodes for electrolytic capacitors Deposition of a metal-containing reagent solution or suspension onto a conductive substrate by various pad-printing techniques is described. The result in a pseudocapacitive oxide coating, nitride coating, carbon nitride coating, or carbide coating having an accepta... | 07/17/2007 |
| 7232736 | Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A first insulation layer covers a lower electrode. A window is formed in t... | 06/19/2007 |
| 7224012 | Thin film capacitor and fabrication method thereof A metal/insulator/metal capacitor and a fabrication method thereof are presented. The method includes forming a first electrode on an insulation film; forming a side wall made of insulating material on a side surface of the first electrode; forming an interlayer ins... | 05/29/2007 |
| 7223685 | Damascene fabrication with electrochemical layer removal The present application discloses process comprising providing a wafer, the wafer comprising an inter-layer dielectric (ILD) having a feature therein, an under-layer deposited on the ILD, and a barrier layer deposited on the under-layer, and a conductive layer depos... | 05/29/2007 |
| 7217618 | Semiconductor device and method for fabricating the same using damascene process A semiconductor device and method for fabricating same according to an embodiment of the invention includes: preparing a semiconductor substrate having a first contact pad and a second contact pad; forming a first insulating film on the substrate; etching the first ... | 05/15/2007 |
| 7208399 | Transistor with notched gate A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regi... | 04/24/2007 |
| 7199445 | Integrated capacitor on packaging substrate An integrated capacitor on a packaging substrate. The integrated capacitor comprises a conductor plane, a first dielectric layer and a signal transmission layer. The conductor plane has an extrusion layer of a first thickness. The first extrusion layer and the condu... | 04/03/2007 |
| 7198654 | Separator sheet and method for manufacturing electric double layer capacitor using the same A separator sheet for manufacturing an electric double layer capacitor, and a method for manufacturing the electric double layer capacitor using the same, are provided. According to an embodiment, the separator sheet for manufacturing the electric double layer capac... | 04/03/2007 |
| 7192788 | Semiconductor device and manufacturing method of the same The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the present inventive manufacturing method of a semiconductor device incl... | 03/20/2007 |
| 7188411 | Process for forming portions of a compound material inside a cavity A process for forming portions of a compound material within an electronic circuit includes the formation of a cavity having at least one opening facing onto an access surface. The cavity furthermore has an internal wall with at least one region made of an initial m... | 03/13/2007 |
| 7179704 | Methods of forming capacitors with high dielectric layers and capacitors so formed Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx... | 02/20/2007 |
| 7179705 | Ferroelectric capacitor and its manufacturing method, and ferroelectric memory device A method for manufacturing a ferroelectric capacitor includes successively disposing a lower electrode, at least one intermediate electrode and an upper electrode over a base substrate, and providing ferroelectric films between the electrodes, respectively. In the s... | 02/20/2007 |
| 7180094 | Nitride-based light emitting device and method of manufacturing the same Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. ... | 02/20/2007 |
| 7169658 | Method for formation of an ultra-thin film and semiconductor device containing such a film A method of manufacturing an ultra-thin PZT pyrochlore film comprises providing a structure comprising a base layer, and forming on the base layer, a titanium layer and a PZT layer in mutual contact. The structure is annealed to form a PZT pyrochlore layer on said b... | 01/30/2007 |
| 7160772 | Structure and method for integrating MIM capacitor in BEOL wiring levels A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level, forming a bottom electrode of the capacitor on the isolating layer, and... | 01/09/2007 |
| 7087522 | Multilayer copper structure for improving adhesion property A multilayer copper structure has been provided for improving the adhesion of copper to a diffusion barrier material, such as TiN, in an integrated circuit substrate. The multilayer copper structure comprises a thin high-resistive copper layer to provide improved ad... | 08/08/2006 |
| 7042034 | Capacitor The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositing Ru or Ir ... | 05/09/2006 |
| 7029372 | Method of forming an electrode equipped in an apparatus for manufacturing an array substrate of a liquid crystal display device The present invention relates to a method of forming an electrode of an apparatus for manufacturing a liquid crystal display (LCD) device, wherein the electrode has a substantially flat surface. A method of forming an electrode of an apparatus for manufacturing a li... | 04/18/2006 |
| 6703285 | Method for manufacturing capacitor structure, and method for manufacturing capacitor element An object of the present invention is to provide a method for manufacturing a capacitor structure that makes it possible to control the accumulation of electric charges on a top electrode film as a factor that brings about electrostatic breakdown in the i... | 03/09/2004 |
