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| Number | Title | Issue Date |
| 7435678 | Method of depositing noble metal electrode using oxidation-reduction reaction Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a ... | 10/14/2008 |
| 7436016 | MIM capacitor with a cap layer over the conductive plates A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bott... | 10/14/2008 |
| 7417276 | Thin film capacitor and fabrication method thereof A thin film capacitor comprising a top electrode, a bottom electrode, and a dielectric film held between the top and bottom electrodes. The dielectric film is composed of at least cations Ba, Sr, and Ti and anion O. The concentration of Sr, Ti, and O ions are unifor... | 08/26/2008 |
| 7408232 | Semiconductor device and method for fabricating the same A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a capacitive insulating film covering the entire surfaces of the plurality ... | 08/05/2008 |
| 7390756 | Atomic layer deposited zirconium silicon oxide films A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include form... | 06/24/2008 |
| 7390678 | Method for fabricating semiconductor device A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Su... | 06/24/2008 |
| 7371633 | Dielectric layer for semiconductor device and method of manufacturing the same A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides. ... | 05/13/2008 |
| 7361549 | Method for fabricating memory cells for a memory device The invention provides a method for fabricating a memory device having memory cells which are formed on a microstructured driving unit (100), in which method a shaping layer (104) is provided and is patterned in such a manner that vertical trench struc... | 04/22/2008 |
| 7332391 | Method for forming storage node contacts in semiconductor device A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a h... | 02/19/2008 |
| 7329548 | Integration processes for fabricating a conductive metal oxide gate ferroelectric memory transistor A method of fabricating a conductive metal oxide gate ferroelectric memory transistor includes forming an oxide layer a substrate and removing the oxide layer in a gate area; depositing a conductive metal oxide layer on the oxide layer and on the exposed gate area; ... | 02/12/2008 |
| 7326981 | Methods and apparatuses for producing a polymer memory device Embodiments of the invention provide a method for producing ferroelectric polymer devices (FPMDs) employing conditions that avoid or reduce detrimental impact on the ferroelectric polymer film. For one embodiment, a damascene patterning metallization technique is us... | 02/05/2008 |
| 7291530 | Semiconductor storage device and method of manufacturing the same A method of manufacturing a semiconductor storage device having a capacitive element having a dielectric layer having a perovskite-type crystal structure represented by general formula ABO3 and a lower electrode and an upper electrode disposed so as to sa... | 11/06/2007 |
| 7256088 | Semiconductor device and manufacturing method thereof A semiconductor device of the present invention includes capacitors made up of a lower electrode, a capacitive insulation film made from metal oxide material, provided on one surface of a semiconductor substrate. An ozone TEOS film is provided on these capacitors, a... | 08/14/2007 |
| 7252773 | Clean for high density capacitors One aspect of the invention relates to a method of cleaning high density capacitors. According to the method, the capacitors are cleaned with a plasma that includes fluorine-containing radicals. The plasma removes a small layer from the capacitors, including their s... | 08/07/2007 |
| 7253102 | Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers An enhanced-surface-area conductive layer compatible with high-dielectric constant materials is created by forming a film or layer having at least two phases, at least one of which is electrically conductive. The film may be formed in any convenient manner, such as ... | 08/07/2007 |
| 7241691 | Conducting metal oxide with additive as p-MOS device electrode Methods for fabricating high work function p-MOS device metal electrodes are provided. In one embodiment, a method is provided for producing a metal electrode including the steps of: providing a high k dielectric stack with an exposed surface; contacting the exposed... | 07/10/2007 |
| 7223614 | Method for manufacturing semiconductor device, and semiconductor device A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface an... | 05/29/2007 |
| 7205247 | Atomic layer deposition of hafnium-based high-k dielectric A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafniu... | 04/17/2007 |
| 7195928 | Method of manufacturing ferroelectric substance thin film and ferroelectric memory using the ferroelectric substance thin film The invention provides a method for forming a ferroelectric thin film that is uniform and good in crystallinity. The method includes applying a liquid to a surface of a substrate. The liquid includes ultra-fine particle powder comprising at least one element constit... | 03/27/2007 |
| 7179705 | Ferroelectric capacitor and its manufacturing method, and ferroelectric memory device A method for manufacturing a ferroelectric capacitor includes successively disposing a lower electrode, at least one intermediate electrode and an upper electrode over a base substrate, and providing ferroelectric films between the electrodes, respectively. In the s... | 02/20/2007 |
| 7176100 | Capacitor and its manufacturing method, and semiconductor device A method is provided for manufacturing a capacitor including the steps of forming a lower electrode on a substrate, forming an insulation film formed of a perovskite type metal oxide on the lower electrode, and forming an upper electrode on the insulation film. The ... | 02/13/2007 |
| 7167387 | Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resist... | 01/23/2007 |
| 7160772 | Structure and method for integrating MIM capacitor in BEOL wiring levels A method for integrating a metal-insulator-metal (MIM) capacitor in back end of line (BEOL) wiring levels of a semiconductor device includes forming an isolating layer over a lower wiring level, forming a bottom electrode of the capacitor on the isolating layer, and... | 01/09/2007 |
| 7095067 | Oxidation-resistant conducting perovskites The present invention provides a semicondctor device that includes a conductor comprised of first and second layers of perovskite that have different stoichiometric compositions. The conductors provide a good template for the formation of dielectric layers thereon a... | 08/22/2006 |
| 6700147 | Semiconductor device and method of manufacturing the same There is provided such a structure that a first insulating layer, a conductive pattern, a second insulating layer, a capacitor Q, a third insulating layer, and a lower electrode leading wiring are formed sequentially on a semiconductor substrate, and a lo... | 03/02/2004 |
| 6699768 | Method for forming capacitor of semiconductor device Methods for forming capacitors of semiconductor devices are disclosed, and more particularly, methods for forming capacitors having a stacked structure of metal layer-insulating film-metal layer and having its storage electrode formed of ruthenium (herein... | 03/02/2004 |
| 6699751 | Method of fabricating a capacitor for semiconductor devices A method of fabricating a capacitor in semiconductor devices includes forming an insulating interlayer on a semiconductor substrate; forming a contact hole in the insulating interlayer to expose a portion of the semiconductor substrate; forming a plug in ... | 03/02/2004 |
| 6699769 | Method for fabricating capacitor using electrochemical deposition and wet etching Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH4)2 (NO3)6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a s... | 03/02/2004 |
| 6699725 | Methods of fabricating ferroelectric memory devices having a ferroelectric planarization layer In the present invention, ferroelectric memory devices using a ferroelectric planarization layer and methods of fabricating the same are disclosed. According to the method of the present invention, a conductive layer is formed on an interlayer insulation ... | 03/02/2004 |
| 6699726 | Semiconductor device and method for the manufacture thereof The semiconductor device is constituted in such a manner that a switching transistor having a drain region and a source region which are comprised of an impurity-diffused region is formed in the surface layer portion of a semiconductor substrate. On the s... | 03/02/2004 |
| 6700145 | Capacitor with high charge storage capacity A capacitor structure characterized by improved capacitance as a result of increasing the capacitance associated with charge spreading that occurs within the electrodes of the capacitor. The electrodes are formed of superconducting or high-dielectric cons... | 03/02/2004 |
| 6696721 | Semiconductor device having a three-dimensional capacitor such as a stack-type capacitor A plurality of storage node electrodes are formed on a semiconductor substrate. A capacitor insulating film is formed on the storage node electrodes. A plate electrode, facing the storage node electrodes, is formed on the capacitor insulating film. A cavi... | 02/24/2004 |
| 6696716 | Structures and methods for enhancing capacitors in integrated ciruits Systems, devices, structures, and methods are described that inhibit dielectric degradation in the presence of contaminants. An enhanced capacitor in a dynamic random access memory cell is discussed. The enhanced capacitor includes a first electrode, a di... | 02/24/2004 |
| 6696718 | Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same A capacitor including a first electrode selected from a group consisting of transition metals, conductive metal-oxides, alloys thereof, and combinations thereof. The capacitor also includes a second electrode and a dielectric between the first and second ... | 02/24/2004 |
| 6693791 | Ferroelectric capacitor and a method for manufacturing thereof A ferroelectric capacitor including a silicon oxidation layer, a lower electrode, a ferroelectric layer and an upper electrode formed on a silicon substrate. The lower electrode having columnar crystals is made of palladium oxide. Also, the upper electrod... | 02/17/2004 |
| 6692795 | Method for fabricating semiconductor device having ruthenium layer and equipment for fabricating the same A method for fabricating a semiconductor device is provided. The method includes the steps of: forming an insulating layer having an opening region on a semiconductor substrate; forming a first ruthenium layer on the insulating layer and the opening regio... | 02/17/2004 |
| 6692976 | Post-etch cleaning treatment The present disclosure relates to a post-etch cleaning treatment for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semicond... | 02/17/2004 |
| 6693366 | Electroless deposition of doped noble metals and noble metal alloys A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal ... | 02/17/2004 |
| 6690055 | Devices containing platinum-rhodium layers and methods A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula Ly RhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and elec... | 02/10/2004 |
| 6689623 | Method for forming a capacitor The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositin... | 02/10/2004 |
