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Class 257/E21.008 - Of capacitor (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E21.003. This subclass
No. of patents: 835
Last issue date: 10/28/2008


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NumberTitleIssue Date
7442633Decoupling capacitor for high frequency noise immunity
Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate,...
10/28/2008
7439112Semiconductor device using partial SOI substrate and manufacturing method thereof
A semiconductor device manufacturing method includes selectively removing portions of a buried oxide layer and first semiconductor layer in an SOI substrate having the first semiconductor layer formed above a semiconductor substrate with the buried oxide layer dispo...
10/21/2008
7435641Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ...
10/14/2008
7435654Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same
There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower...
10/14/2008
7436016MIM capacitor with a cap layer over the conductive plates
A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bott...
10/14/2008
7432548Silicon lanthanide oxynitride films
Electronic apparatus and methods of forming the electronic apparatus include a silicon lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The silicon lanthanide oxynitride film may be arranged as a layered structure having one or m...
10/07/2008
7432170Semiconductor device and fabrication method thereof
On a silicon substrate, a first insulation layer, a lower conductive layer, a capacitor-insulator layer, and an upper conductive layer are formed in that order. Then, a first resist pattern is formed, the upper conductive layer is etched to form an upper electrode, ...
10/07/2008
7416953Vertical MIM capacitors and method of fabricating the same
A method of fabricating a vertical MIM capacitor. An insulation layer is formed on the substrate. The insulation layer is patterned to form an opening in a predetermined area of a core electrode. Then, the opening is filled to form a sacrificial plug. Subsequently, ...
08/26/2008
7413947Integrated high voltage capacitor having a top-level dielectric layer and a method of manufacture therefor
The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) loca...
08/19/2008
7407852Trench capacitor of a DRAM and fabricating method thereof
A method of fabricating trench capacitors is described. A substrate having at least one isolation structure is provided. A first trench and a second trench are formed in the substrate beside the isolation structure. A first lower electrode and a second lower electro...
08/05/2008
7407520Method of making a multi-electrode double layer capacitor having hermetic electrolyte seal
A long life double layer capacitor and method of making the same including a case and a first terminal with an electrically insulating hermitic seal interposed between the first terminal and the case. A first current collector foil is electrically coupled to an inte...
08/05/2008
7405439Memory cell structure and semiconductor memory device
A memory cell structure comprises a first memory capacitor that is arranged in a first local area, and includes a first lower electrode, a first upper electrode, and a first dielectric oxide film interposed between the first lower electrode and the first upper elect...
07/29/2008
7405167Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same
A method of manufacturing a nonvolatile organic memory device including a memory layer interposed between an upper electrode layer and a lower electrode layer, which includes dispersing ions of conductive nanoparticles in an organic material disposed between the two...
07/29/2008
7402488Method of manufacturing a semiconductor memory device
A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern partially exposing an upper surface of t...
07/22/2008
7402487Process for fabricating a semiconductor device having deep trench structures
A process for fabricating a semiconductor device having deep trench structures includes forming a first portion of the trench in a semiconductor substrate and a second portion of the trench in a selectively-formed upper layer. After etching the substrate to form the...
07/22/2008
7402183High capacitance cathode foil produced by abrasion process using titanium nitride powder
A dry titanium nitride (TiN) powder abrasion method roughens the surface of a valve metal foil for use as a cathode in an electrolytic capacitor. This increases the surface area of the foil, thereby increasing the double-layer capacitance of the cathode, and also me...
07/22/2008
7393740Methods for making fixed parallel plate MEMS capacitor microsensors and microsensor arrays
A fixed parallel plate micro-mechanical systems (MEMS) based sensor is fabricated to allow a dissolved dielectric to flow through a porous top plate, coming to rest on a bottom plate. A post-deposition bake ensures further purity and uniformity of the dielectric lay...
07/01/2008
7387928Device and method for making air, gas or vacuum capacitors and other microwave components
A device and method for making a capacitor and other high frequency and/or microwave components. In particular, an air dielectric capacitor has a first electrode and a second electrode that are spaced apart, planar and each of a different size or area. The first ele...
06/17/2008
7387929Capacitor in semiconductor device and method of manufacturing the same
The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formati...
06/17/2008
7378692Integrated electronic circuit comprising superposed components
An integrated electronic circuit with at least at least one passive electronic component and at least one active electronic component. The passive electronic component is formed within an insulating material disposed on a substrate. The active component is formed wi...
05/27/2008
7377947Electrolyte capacitors having a polymeric outer layer and process for their production
The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current, and which comprise a solid electrolyte of conductive polymers and an outer layer comprising conductive polymers applie...
05/27/2008
7378719Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ...
05/27/2008
7378326Printed circuit board with embedded capacitors therein and manufacturing process thereof
A printed circuit board having embedded capacitors includes a double-sided copper-clad laminate including first circuit layers formed in the outer layers thereof, the first circuit layers including bottom electrodes and circuit patterns; dielectric layers formed by ...
05/27/2008
7374993Methods of forming capacitors
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The expo...
05/20/2008
7374585Method for producing solid electrolytic capacitor
A production method for a solid electrolytic capacitor comprises the steps of mixing a metal alkoxybenzenesulfonate and/or a metal alkylsulfonate as an oxidizing agent and an electrically conductive polymer in a solvent, immersing a capacitor element in the resultin...
05/20/2008
7368343Low leakage MIM capacitor
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures ...
05/06/2008
7365412Vertical parallel plate capacitor using spacer shaped electrodes and method for fabrication thereof
A capacitor structure uses an aperture located within a dielectric layer in turn located over a substrate. A pair of conductor interconnection layers embedded within the dielectric layer terminates at a pair of opposite sidewalls of the aperture. A pair of capacitor...
04/29/2008
7364979Capcitor with single crystal tantalum oxide layer and method for fabricating the same
A capacitor and a method for fabricating the same are provided. The capacitor includes: a substrate; an inter-layer insulation layer formed over the substrate and including a contact hole; a storage node formed over the inter-layer insulation layer and filled into t...
04/29/2008
7361568Embedded capacitors and methods for their fabrication and connection
Embedded capacitors comprise a bimetal foil (500) that includes a first copper layer (205) and an aluminum layer (210) on the first copper layer. The aluminum layer has a smooth side adjacent the first copper layer and a high surface area textur...
04/22/2008
7354843Method of forming a capacitor that includes forming a bottom electrode in a strained silicon layer
A decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer. A substantially flat bottom electrode is formed in a portion of the strained silicon layer and a capacitor dielectric overlying the bottom electrode. A substantiall...
04/08/2008
7351640Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules
Methods are provided for robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical si...
04/01/2008
7348661Array capacitor apparatuses to filter input/output signal
An apparatus for filtering noise from an input/output (I/O) signal is disclosed. In various embodiments, the apparatus may be an array capacitor, and may be disposed between an electronic package and an underlying substrate such as a printed circuit board. ...
03/25/2008
7348194Electrode compositions containing carbon nanotubes for solid electrolyte capacitors
An improved capacitor with an anode with an anode wire and an oxide layer on the surface of the anode. A cathode layer is exterior to the oxide layer. A carbon conductive layer is exterior to the cathode layer wherein the cathode layer comprises 5-75 wt % resin and ...
03/25/2008
7341608Method for making a device of storing energy, enhancing the efficiency of manufacture and the reliability of products
This invention demonstrates a method for making a device of storing energy, enhancing the efficiency of manufacture and the reliability of products. The electrode plates of storing energy are accumulated according to the working voltage needed to form a pre-structur...
03/11/2008
7338815Semiconductor device manufacturing method
A semiconductor device manufacturing method, includes a step of forming refractory metal silicide layers 13a to 13c in a partial area of a semiconductor substrate 10, a step of forming an interlayer insulating film 21 on the...
03/04/2008
7331999Method of producing solid electrolytic capacitor
The invention provides a production method of a solid electrolytic capacitor capable of efficiently producing a solid electrolytic capacitor consisting of a stack of capacitor elements. For producing a solid electrolytic capacitor consisting of a stack of capacitor ...
02/19/2008
7332401Method of fabricating an electrode structure for use in an integrated circuit
An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the d...
02/19/2008
7332434Semiconductor device having diffusion barrier layer containing chrome and method for fabricating the same
A semiconductor device is provided which is capable of preventing a constitutional material of a diffusion barrier layer from diffusing into a bottom electrode during a high thermal process and of preventing an increase in contact resistance of a contact plug by sup...
02/19/2008
7329572Method of forming PIP capacitor
A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a dielectric layer over the lower electrode, forming a second polysilicon lay...
02/12/2008
7326261Surface-mount capacitor and method of producing the same
A surface-mount capacitor includes a multilayer capacitor structure formed by laminating plate-like capacitor elements each having anode lead portions at opposite ends thereof and a cathode portion at the center, an anode terminal connected to each anode lead portio...
02/05/2008
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