Subclasses list
- 1 BULK EFFECT DEVICE
Patents: 138
Patent Applications: 69
- 2 Bulk effect switching in amorphous material
Patents: 506
Patent Applications: 658
- 3 With means to localize region of conduction (e.g., "pore" structure)
Patents: 471
Patent Applications: 256
- 4 With specified electrode composition or configuration
Patents: 493
Patent Applications: 724
- 5 In array
Patents: 237
Patent Applications: 250
- 6 Intervalley transfer (e.g., Gunn effect)
Patents: 58
Patent Applications: 5
- 7 In monolithic integrated circuit
Patents: 20
Patent Applications: 5
- 8 Three or more terminal device
Patents: 36
Patent Applications: 2
- 9 THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE)
Patents: 382
Patent Applications: 286
- 10 Low workfunction layer for electron emission (e.g., photocathode electron emissive layer)
Patents: 441
Patent Applications: 69
- 11 Combined with a heterojunction involving a III-V compound
Patents: 192
Patent Applications: 25
- 12 Heterojunction
Patents: 309
Patent Applications: 39
- 13 Incoherent light emitter
Patents: 842
Patent Applications: 822
- 14 Quantum well
Patents: 990
Patent Applications: 423
- 15 Superlattice
Patents: 394
Patent Applications: 73
- 16 Of amorphous semiconductor material
Patents: 65
Patent Applications: 3
- 17 With particular barrier dimension
Patents: 451
Patent Applications: 24
- 18 Strained layer superlattice
Patents: 379
Patent Applications: 40
- 19 Si x Ge 1-x
Patents: 448
Patent Applications: 130
- 20 Field effect device
Patents: 384
Patent Applications: 61
- 21 Light responsive structure
Patents: 667
Patent Applications: 105
- 22 With specified semiconductor materials
Patents: 523
Patent Applications: 37
- 23 Current flow across well
Patents: 144
Patent Applications: 9
- 24 Field effect device
Patents: 444
Patent Applications: 280
- 25 Employing resonant tunneling
Patents: 363
Patent Applications: 52
- 26 Ballistic transport device
Patents: 93
Patent Applications: 6
- 27 Field effect transistor
Patents: 100
Patent Applications: 13
- 28 Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)
Patents: 98
Patent Applications: 23
- 29 Ballistic transport device (e.g., hot electron transistor)
Patents: 108
Patent Applications: 61
- 30 Tunneling through region of reduced conductivity
Patents: 260
Patent Applications: 40
- 31 Josephson
Patents: 228
Patent Applications: 52
- 32 Particular electrode material
Patents: 125
Patent Applications: 6
- 33 High temperature (i.e., >30o Kelvin)
Patents: 156
Patent Applications: 5
- 34 Weak link (e.g., narrowed portion of superconductive line)
Patents: 154
Patent Applications: 3
- 35 Particular barrier material
Patents: 171
Patent Applications: 4
- 36 With additional electrode to control conductive state of Josephson junction
Patents: 147
Patent Applications: 3
- 37 At least one electrode layer of semiconductor material
Patents: 64
Patent Applications: 4
- 38 Three or more electrode device
Patents: 75
Patent Applications: 10
- 39 Three or more electrode device
Patents: 157
Patent Applications: 14
- 40 ORGANIC SEMICONDUCTOR MATERIAL
Patents: 2745
Patent Applications: 3475
- 41 POINT CONTACT DEVICE
Patents: 56
Patent Applications: 8
- 42 SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM
Patents: 93
Patent Applications: 62
- 43 SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE
Patents: 363
Patent Applications: 989
- 44 WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE
Patents: 43
Patent Applications: 9
- 45 Elongated alloyed region (e.g., thermal gradient zone melting, TGZM)
Patents: 53
Patent Applications: 2
- 46 In pn junction tunnel diode (Esaki diode)
Patents: 58
Patent Applications: 11
- 47 In bipolar transistor structure
Patents: 36
Patent Applications: 3
- 48 TEST OR CALIBRATION STRUCTURE
Patents: 1551
Patent Applications: 842
- 49 NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)
Patents: 287
Patent Applications: 137
- 50 Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
Patents: 298
Patent Applications: 16
- 51 Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
Patents: 242
Patent Applications: 57
- 52 Amorphous semiconductor material
Patents: 332
Patent Applications: 82
- 53 Responsive to nonelectrical external signals (e.g., light)
Patents: 548
Patent Applications: 105
- 54 With Schottky barrier to amorphous material
Patents: 79
Patent Applications: 3
- 55 Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )
Patents: 264
Patent Applications: 8
- 56 With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Patents: 123
Patent Applications: 0
- 57 Field effect device in amorphous semiconductor material
Patents: 731
Patent Applications: 487
- 58 With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Patents: 73
Patent Applications: 6
- 59 In array having structure for use as imager or display, or with transparent electrode
Patents: 3051
Patent Applications: 1770
- 60 With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path)
Patents: 124
Patent Applications: 45
- 61 With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain)
Patents: 166
Patent Applications: 10
- 62 With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
Patents: 58
Patent Applications: 2
- 63 Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )
Patents: 154
Patent Applications: 5
- 64 Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)
Patents: 430
Patent Applications: 61
- 65 Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)
Patents: 301
Patent Applications: 50
- 66 Field effect device in non-single crystal, or recrystallized, Semiconductor material
Patents: 1389
Patent Applications: 665
- 67 In combination with device formed in single crystal semiconductor material (e.g., stacked FETs)
Patents: 381
Patent Applications: 36
- 68 Capacitor element in single crystal semiconductor (e.g., DRAM)
Patents: 245
Patent Applications: 20
- 69 Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS)
Patents: 382
Patent Applications: 32
- 70 Recrystallized semiconductor material
Patents: 169
Patent Applications: 18
- 71 In combination with capacitor element (e.g., DRAM)
Patents: 261
Patent Applications: 153
- 72 In array having structure for use as imager or display, or with transparent electrode
Patents: 2695
Patent Applications: 1393
- 73 Schottky barrier to polycrystalline semiconductor material
Patents: 80
Patent Applications: 5
- 74 Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit")
Patents: 162
Patent Applications: 21
- 75 Recrystallized semiconductor material
Patents: 187
Patent Applications: 78
- 76 SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS
Patents: 480
Patent Applications: 634
- 77 Diamond or silicon carbide
Patents: 1262
Patent Applications: 775
- 78 II-VI compound
Patents: 186
Patent Applications: 16
- 79 INCOHERENT LIGHT EMITTER STRUCTURE
Patents: 1751
Patent Applications: 906
- 80 In combination with or also constituting light responsive device
Patents: 570
Patent Applications: 124
- 81 With specific housing or contact structure
Patents: 876
Patent Applications: 146
- 82 Discrete light emitting and light responsive devices
Patents: 679
Patent Applications: 117
- 83 Light coupled transistor structure
Patents: 214
Patent Applications: 50
- 84 Combined in integrated structure
Patents: 394
Patent Applications: 113
- 85 With heterojunction
Patents: 271
Patent Applications: 34
- 86 Active layer of indirect band gap semiconductor
Patents: 219
Patent Applications: 42
- 87 With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)
Patents: 113
Patent Applications: 19
- 88 Plural light emitting devices (e.g., matrix, 7-segment array)
Patents: 1048
Patent Applications: 1146
- 89 Multi-color emission
Patents: 531
Patent Applications: 521
- 90 With heterojunction
Patents: 146
Patent Applications: 21
- 91 With shaped contacts or opaque masking
Patents: 302
Patent Applications: 162
- 92 Alphanumeric segmented array
Patents: 48
Patent Applications: 0
- 93 With electrical isolation means in integrated circuit structure
Patents: 183
Patent Applications: 56
- 94 With heterojunction
Patents: 1218
Patent Applications: 553
- 95 With contoured external surface (e.g., dome shape to facilitate light emission)
Patents: 410
Patent Applications: 79
- 96 Plural heterojunctions in same device
Patents: 763
Patent Applications: 115
- 97 More than two heterojunctions in same device
Patents: 492
Patent Applications: 50
- 98 With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package
Patents: 2797
Patent Applications: 3550
- 99 With housing or contact structure
Patents: 2132
Patent Applications: 1975
- 100 Encapsulated
Patents: 707
Patent Applications: 496
- 101 With particular dopant concentration or concentration profile (e.g., graded junction)
Patents: 373
Patent Applications: 72
- 102 With particular dopant material (e.g., zinc as dopant in GaAs)
Patents: 473
Patent Applications: 159
- 103 With particular semiconductor material
Patents: 1997
Patent Applications: 1021
- 104 TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE
Patents: 169
Patent Applications: 25
- 105 In three or more terminal device
Patents: 54
Patent Applications: 5
- 106 Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode)
Patents: 118
Patent Applications: 14
- 107 REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)
Patents: 280
Patent Applications: 59
- 108 Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal)
Patents: 76
Patent Applications: 6
- 109 Having only two terminals and no control electrode (gate), e.g., Shockley diode
Patents: 127
Patent Applications: 26
- 110 More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.)
Patents: 113
Patent Applications: 1
- 111 Triggered by V BO overvoltage means
Patents: 55
Patent Applications: 3
- 112 With highly-doped breakdown diode trigger
Patents: 37
Patent Applications: 3
- 113 With light activation
Patents: 125
Patent Applications: 10
- 114 With separate light detector integrated on chip with regenerative switching device
Patents: 37
Patent Applications: 1
- 115 With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
Patents: 76
Patent Applications: 5
- 116 With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package
Patents: 60
Patent Applications: 5
- 117 In groove or with thinned semiconductor portion
Patents: 39
Patent Applications: 1
- 118 With groove or thinned light sensitive portion
Patents: 63
Patent Applications: 2
- 119 Bidirectional rectifier with control electrode (gate) (e.g., Triac)
Patents: 108
Patent Applications: 21
- 120 Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure)
Patents: 47
Patent Applications: 4
- 121 With diode or transistor in reverse path
Patents: 81
Patent Applications: 8
- 122 Lateral
Patents: 62
Patent Applications: 3
- 123 With trigger signal amplification (e.g., amplified gate)
Patents: 31
Patent Applications: 2
- 124 Combined with field effect transistor structure
Patents: 98
Patent Applications: 16
- 125 Controllable emitter shunting
Patents: 28
Patent Applications: 0
- 126 With means to separate a device into sections having different conductive polarity
Patents: 46
Patent Applications: 0
- 127 Guard ring or groove
Patents: 114
Patent Applications: 13
- 128 Having overlapping sections of different conductive polarity
Patents: 31
Patent Applications: 0
- 129 With means to increase reverse breakdown voltage
Patents: 65
Patent Applications: 1
- 130 Switching speed enhancement means
Patents: 53
Patent Applications: 4
- 131 Recombination centers or deep level dopants
Patents: 45
Patent Applications: 1
- 132 Five or more layer unidirectional structure
Patents: 74
Patent Applications: 6
- 133 Combined with field effect transistor
Patents: 370
Patent Applications: 105
- 134 J-FET (junction field effect transistor)
Patents: 101
Patent Applications: 30
- 135 Vertical (i.e., where the source is located above the drain or vice versa)
Patents: 144
Patent Applications: 12
- 136 Enhancement mode (e.g., so-called SITs)
Patents: 135
Patent Applications: 5
- 137 Having controllable emitter shunt
Patents: 105
Patent Applications: 9
- 138 Having gate turn off (GTO) feature
Patents: 184
Patent Applications: 7
- 139 With extended latchup current level (e.g., COMFET device)
Patents: 340
Patent Applications: 170
- 140 Combined with other solid-state active device in integrated structure
Patents: 121
Patent Applications: 70
- 141 Lateral structure, i.e., current flow parallel to main device surface
Patents: 126
Patent Applications: 31
- 142 Having impurity doping for gain reduction
Patents: 61
Patent Applications: 5
- 143 Having anode shunt means
Patents: 44
Patent Applications: 10
- 144 Cathode emitter or cathode electrode feature
Patents: 92
Patent Applications: 8
- 145 Low impedance channel contact extends below surface
Patents: 20
Patent Applications: 2
- 146 Combined with other solid-state active device in integrated structure
Patents: 237
Patent Applications: 21
- 147 With extended latchup current level (e.g., gate turn off "GTO" device)
Patents: 198
Patent Applications: 28
- 148 Having impurity doping for gain reduction
Patents: 34
Patent Applications: 1
- 149 Having anode shunt means
Patents: 76
Patent Applications: 5
- 150 With specified housing or external terminal
Patents: 30
Patent Applications: 3
- 151 External gate terminal structure or composition
Patents: 30
Patent Applications: 2
- 152 Cathode emitter or cathode electrode feature
Patents: 125
Patent Applications: 3
- 153 Gate region or electrode feature
Patents: 132
Patent Applications: 2
- 154 With resistive region connecting separate sections of device
Patents: 157
Patent Applications: 2
- 155 With switching speed enhancement means (e.g., Schottky contact)
Patents: 150
Patent Applications: 12
- 156 Having deep level dopants or recombination centers
Patents: 98
Patent Applications: 2
- 157 With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
Patents: 57
Patent Applications: 6
- 158 Three or more amplification stages
Patents: 23
Patent Applications: 0
- 159 Transistor as amplifier
Patents: 28
Patent Applications: 0
- 160 With distributed amplified current
Patents: 54
Patent Applications: 0
- 161 With a turn-off diode
Patents: 31
Patent Applications: 0
- 162 Lateral structure
Patents: 155
Patent Applications: 8
- 163 Emitter region feature
Patents: 97
Patent Applications: 3
- 164 Multi-emitter region (e.g., emitter geometry or emitter ballast resistor)
Patents: 79
Patent Applications: 6
- 165 Laterally symmetric regions
Patents: 34
Patent Applications: 0
- 166 Radially symmetric regions
Patents: 42
Patent Applications: 0
- 167 Having at least four external electrodes
Patents: 87
Patent Applications: 0
- 168 With means to increase breakdown voltage
Patents: 83
Patent Applications: 6
- 169 High resistivity base layer
Patents: 33
Patent Applications: 1
- 170 Surface feature (e.g., guard ring, groove, mesa, etc.)
Patents: 173
Patent Applications: 6
- 171 Edge feature (e.g., beveled edge)
Patents: 60
Patent Applications: 3
- 172 With means to lower "ON" voltage drop
Patents: 41
Patent Applications: 2
- 173 Device protection (e.g., from overvoltage)
Patents: 575
Patent Applications: 142
- 174 Rate of rise of current (e.g., dI/dt)
Patents: 86
Patent Applications: 3
- 175 With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.)
Patents: 135
Patent Applications: 8
- 176 Located in an emitter-gate region
Patents: 17
Patent Applications: 0
- 177 With housing or external electrode
Patents: 103
Patent Applications: 37
- 178 With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor)
Patents: 41
Patent Applications: 10
- 179 With malleable electrode (e.g., silver electrode layer)
Patents: 14
Patent Applications: 2
- 180 Stud mount
Patents: 20
Patent Applications: 6
- 181 With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)
Patents: 73
Patent Applications: 9
- 182 With lead feedthrough means on side of housing
Patents: 45
Patent Applications: 5
- 183 HETEROJUNCTION DEVICE
Patents: 331
Patent Applications: 130
- 183.1 Charge transfer device
Patents: 81
Patent Applications: 0
- 184 Light responsive structure
Patents: 785
Patent Applications: 129
- 185 Staircase (including graded composition) device
Patents: 182
Patent Applications: 11
- 186 Avalanche photodetection structure
Patents: 245
Patent Applications: 44
- 187 Having transistor structure
Patents: 199
Patent Applications: 25
- 188 Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.)
Patents: 132
Patent Applications: 9
- 189 Layer is a group III-V semiconductor compound
Patents: 253
Patent Applications: 31
- 190 With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch)
Patents: 728
Patent Applications: 349
- 191 Having graded composition
Patents: 363
Patent Applications: 31
- 192 Field effect transistor
Patents: 1271
Patent Applications: 553
- 194 Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))
Patents: 842
Patent Applications: 399
- 195 Combined with diverse type device
Patents: 190
Patent Applications: 26
- 196 Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p)
Patents: 61
Patent Applications: 6
- 197 Bipolar transistor
Patents: 885
Patent Applications: 237
- 198 Wide band gap emitter
Patents: 449
Patent Applications: 41
- 199 Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)
Patents: 110
Patent Applications: 15
- 200 Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI))
Patents: 852
Patent Applications: 129
- 201 Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs
Patents: 393
Patent Applications: 108
- 202 GATE ARRAYS
Patents: 542
Patent Applications: 220
- 203 With particular chip input/output means
Patents: 410
Patent Applications: 85
- 204 Having specific type of active device (e.g., CMOS)
Patents: 452
Patent Applications: 124
- 205 With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs)
Patents: 117
Patent Applications: 10
- 206 Particular layout of complementary FETs with regard to each other
Patents: 479
Patent Applications: 63
- 207 With particular power supply distribution means
Patents: 632
Patent Applications: 89
- 208 With particular signal path connections
Patents: 693
Patent Applications: 166
- 209 Programmable signal paths (e.g., with fuse elements, laser programmable, etc)
Patents: 506
Patent Applications: 105
- 210 With wiring channel area
Patents: 261
Patent Applications: 24
- 211 Multi-level metallization
Patents: 649
Patent Applications: 142
- 212 CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR)
Patents: 109
Patent Applications: 14
- 213 FIELD EFFECT DEVICE
Patents: 461
Patent Applications: 278
- 214 Charge injection device
Patents: 87
Patent Applications: 11
- 215 Charge transfer device
Patents: 220
Patent Applications: 38
- 216 Majority signal carrier (e.g., buried or bulk channel, or peristaltic)
Patents: 120
Patent Applications: 7
- 217 Having a conductive means in direct contact with channel (e.g., non-insulated gate)
Patents: 80
Patent Applications: 1
- 218 High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semiconductor) or minority carriers at input (i.e., surface channel input)
Patents: 48
Patent Applications: 2
- 219 Impurity concentration variation
Patents: 81
Patent Applications: 11
- 220 Vertically within channel (e.g., profiled)
Patents: 66
Patent Applications: 4
- 221 Along the length of the channel (e.g., doping variations for transfer directionality)
Patents: 121
Patent Applications: 5
- 222 Responsive to non-electrical external signal (e.g., imager)
Patents: 468
Patent Applications: 128
- 223 Having structure to improve output signal (e.g., antiblooming drain)
Patents: 330
Patent Applications: 37
- 224 Channel confinement
Patents: 113
Patent Applications: 5
- 225 Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)
Patents: 292
Patent Applications: 123
- 226 Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid")
Patents: 145
Patent Applications: 17
- 227 With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared)
Patents: 57
Patent Applications: 8
- 228 Light responsive, back illuminated
Patents: 105
Patent Applications: 24
- 229 Having structure to improve output signal (e.g., exposure control structure)
Patents: 267
Patent Applications: 20
- 230 With blooming suppression structure
Patents: 185
Patent Applications: 11
- 231 2-dimensional area architecture
Patents: 285
Patent Applications: 20
- 232 Having alternating strips of sensor structures and register structures (e.g., interline imager)
Patents: 422
Patent Applications: 49
- 233 Sensors not overlaid by electrode (e.g., photodiodes)
Patents: 570
Patent Applications: 79
- 234 Single strip of sensors (e.g., linear imager)
Patents: 149
Patent Applications: 12
- 235 Electrical input
Patents: 73
Patent Applications: 1
- 236 Signal applied to field effect electrode
Patents: 206
Patent Applications: 6
- 237 Charge-presetting/linear input type (e.g., fill and spill)
Patents: 71
Patent Applications: 3
- 238 Input signal responsive to signal charge in charge transfer device (e.g., regeneration or feedback)
Patents: 78
Patent Applications: 1
- 239 Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)
Patents: 431
Patent Applications: 43
- 240 Changing width or direction of channel (e.g., meandering channel)
Patents: 132
Patent Applications: 2
- 241 Multiple channels (e.g., converging or diverging or parallel channels)
Patents: 249
Patent Applications: 3
- 242 Vertical charge transfer
Patents: 76
Patent Applications: 3
- 243 Channel confinement
Patents: 128
Patent Applications: 5
- 244 Comprising a groove
Patents: 63
Patent Applications: 15
- 245 Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel)
Patents: 155
Patent Applications: 3
- 246 Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit")
Patents: 125
Patent Applications: 26
- 247 Uniphase or virtual phase structure
Patents: 85
Patent Applications: 1
- 248 2-phase
Patents: 128
Patent Applications: 6
- 249 Electrode structures or materials
Patents: 260
Patent Applications: 13
- 250 Plural gate levels
Patents: 306
Patent Applications: 18
- 251 Substantially incomplete signal charge transfer (e.g., bucket brigade)
Patents: 46
Patent Applications: 0
- 252 Responsive to non-optical, non-electrical signal
Patents: 142
Patent Applications: 45
- 253 Chemical (e.g., ISFET, CHEMFET)
Patents: 302
Patent Applications: 166
- 254 Physical deformation (e.g., strain sensor, acoustic wave detector)
Patents: 250
Patent Applications: 49
- 255 With current flow along specified crystal axis (e.g., axis of maximum carrier mobility)
Patents: 99
Patent Applications: 140
- 256 Junction field effect transistor (unipolar transistor)
Patents: 179
Patent Applications: 94
- 257 Light responsive or combined with light responsive device
Patents: 211
Patent Applications: 31
- 258 In imaging array
Patents: 185
Patent Applications: 9
- 259 Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)
Patents: 62
Patent Applications: 9
- 260 Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)
Patents: 114
Patent Applications: 13
- 261 Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)
Patents: 103
Patent Applications: 7
- 262 Combined with insulated gate field effect transistor (IGFET)
Patents: 146
Patent Applications: 45
- 263 Vertical controlled current path
Patents: 167
Patent Applications: 25
- 264 Enhancement mode or with high resistivity channel (e.g., doping of 10 15 cm -3 or less)
Patents: 147
Patent Applications: 8
- 265 In integrated circuit
Patents: 56
Patent Applications: 12
- 266 With multiple parallel current paths (e.g., grid gate)
Patents: 168
Patent Applications: 7
- 267 With Schottky barrier gate
Patents: 53
Patent Applications: 11
- 268 Enhancement mode
Patents: 66
Patent Applications: 7
- 269 With means to adjust barrier height (e.g., doping profile)
Patents: 35
Patent Applications: 2
- 270 Plural, separately connected, gates control same channel region
Patents: 171
Patent Applications: 29
- 271 Load element or constant current source (e.g., with source to gate connection)
Patents: 36
Patent Applications: 1
- 272 Junction field effect transistor in integrated circuit
Patents: 158
Patent Applications: 43
- 273 With bipolar device
Patents: 183
Patent Applications: 27
- 274 Complementary junction field effect transistors
Patents: 100
Patent Applications: 26
- 275 Microwave integrated circuit (e.g., microstrip type)
Patents: 244
Patent Applications: 10
- 276 With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge)
Patents: 207
Patent Applications: 12
- 277 With capacitive or inductive elements
Patents: 125
Patent Applications: 8
- 278 With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit)
Patents: 85
Patent Applications: 10
- 279 Pn junction gate in compound semiconductor material (e.g., GaAs)
Patents: 105
Patent Applications: 16
- 280 With Schottky gate
Patents: 434
Patent Applications: 74
- 281 Schottky gate to silicon semiconductor
Patents: 107
Patent Applications: 11
- 282 Gate closely aligned to source region
Patents: 99
Patent Applications: 1
- 283 With groove or overhang for alignment
Patents: 99
Patent Applications: 0
- 284 Schottky gate in groove
Patents: 203
Patent Applications: 17
- 285 With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
Patents: 162
Patent Applications: 10
- 286 With non-uniform channel thickness or width
Patents: 92
Patent Applications: 3
- 287 With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)
Patents: 207
Patent Applications: 20
- 288 Having insulated electrode (e.g., MOSFET, MOS diode)
Patents: 1320
Patent Applications: 1308
- 289 Significant semiconductor chemical compound in bulk crystal (e.g., GaAs)
Patents: 209
Patent Applications: 20
- 290 Light responsive or combined with light responsive device
Patents: 498
Patent Applications: 157
- 291 Imaging array
Patents: 890
Patent Applications: 331
- 292 Photodiodes accessed by FETs
Patents: 1220
Patent Applications: 864
- 293 Photoresistors accessed by FETs, or photodetectors separate from FET chip
Patents: 164
Patent Applications: 22
- 294 With shield, filter, or lens
Patents: 368
Patent Applications: 136
- 295 With ferroelectric material layer
Patents: 2486
Patent Applications: 737
- 296 Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)
Patents: 3481
Patent Applications: 910
- 297 With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection)
Patents: 260
Patent Applications: 16
- 298 Capacitor for signal storage in combination with non-volatile storage means
Patents: 610
Patent Applications: 101
- 299 Structure configured for voltage converter (e.g., charge pump, substrate bias generator)
Patents: 188
Patent Applications: 16
- 300 Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., non-destructive readout dynamic memory cell structure)
Patents: 775
Patent Applications: 139
- 301 Capacitor in trench
Patents: 1342
Patent Applications: 291
- 302 Vertical transistor
Patents: 783
Patent Applications: 86
- 303 Stacked capacitor
Patents: 967
Patent Applications: 90
- 304 Storage node isolated by dielectric from semiconductor substrate
Patents: 504
Patent Applications: 35
- 305 With means to insulate adjacent storage nodes (e.g., channel stops or field oxide)
Patents: 354
Patent Applications: 7
- 306 Stacked capacitor
Patents: 2148
Patent Applications: 355
- 307 Parallel interleaved capacitor electrode pairs (e.g., interdigitized)
Patents: 309
Patent Applications: 25
- 308 With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post)
Patents: 440
Patent Applications: 45
- 309 With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes)
Patents: 713
Patent Applications: 76
- 310 With high dielectric constant insulator (e.g., Ta 2 O 5 )
Patents: 1217
Patent Applications: 173
- 311 Storage Node isolated by dielectric from semiconductor substrate
Patents: 399
Patent Applications: 22
- 312 Voltage variable capacitor (i. e., capacitance varies with applied voltage)
Patents: 187
Patent Applications: 37
- 313 Inversion layer capacitor
Patents: 157
Patent Applications: 10
- 314 Variable threshold (e.g., floating gate memory device)
Patents: 1738
Patent Applications: 643
- 315 With floating gate electrode
Patents: 2758
Patent Applications: 895
- 316 With additional contacted control electrode
Patents: 2477
Patent Applications: 765
- 317 With irregularities on electrode to facilitate charging or discharging of floating electrode
Patents: 643
Patent Applications: 57
- 318 Additional control electrode is doped region in semiconductor substrate
Patents: 373
Patent Applications: 18
- 319 Plural additional contacted control electrodes
Patents: 449
Patent Applications: 97
- 320 Separate control electrodes for charging and for discharging floating electrode
Patents: 395
Patent Applications: 23
- 321 With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling
Patents: 1236
Patent Applications: 355
- 322 With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction)
Patents: 270
Patent Applications: 11
- 323 With means to facilitate light erasure
Patents: 96
Patent Applications: 3
- 324 Multiple insulator layers (e.g., MNOS structure)
Patents: 1161
Patent Applications: 994
- 325 Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions)
Patents: 238
Patent Applications: 93
- 326 With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure)
Patents: 393
Patent Applications: 170
- 327 Short channel insulated gate field effect transistor
Patents: 604
Patent Applications: 217
- 328 Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)
Patents: 978
Patent Applications: 311
- 329 Gate controls vertical charge flow portion of channel (e.g., VMOS device)
Patents: 879
Patent Applications: 345
- 330 Gate electrode in groove
Patents: 1594
Patent Applications: 847
- 331 Plural gate electrodes or grid shaped gate electrode
Patents: 757
Patent Applications: 152
- 332 Gate electrode self-aligned with groove
Patents: 447
Patent Applications: 49
- 333 With thick insulator to reduce gate capacitance in non-channel areas (e.g., thick oxide over source or drain region)
Patents: 311
Patent Applications: 27
- 334 In integrated circuit structure
Patents: 298
Patent Applications: 236
- 335 Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor)
Patents: 838
Patent Applications: 251
- 336 With lightly doped portion of drain region adjacent channel (e.g., LDD structure)
Patents: 912
Patent Applications: 189
- 337 In integrated circuit structure
Patents: 260
Patent Applications: 115
- 338 With complementary field effect transistor
Patents: 230
Patent Applications: 54
- 339 With means to increase breakdown voltage
Patents: 614
Patent Applications: 98
- 340 With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode)
Patents: 158
Patent Applications: 16
- 341 Plural sections connected in parallel (e.g., power MOSFET)
Patents: 1209
Patent Applications: 238
- 342 With means to reduce ON resistance
Patents: 458
Patent Applications: 56
- 343 All contacts on same surface (e.g., lateral structure)
Patents: 555
Patent Applications: 167
- 344 With lightly doped portion of drain region adjacent channel (e.g., LDD structure)
Patents: 1175
Patent Applications: 159
- 345 With means to prevent sub-surface currents, or with non-uniform channel doping
Patents: 414
Patent Applications: 25
- 346 Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)
Patents: 304
Patent Applications: 26
- 347 Single crystal semiconductor layer on insulating substrate (SOI)
Patents: 3288
Patent Applications: 1400
- 348 Depletion mode field effect transistor
Patents: 329
Patent Applications: 79
- 349 With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate
Patents: 566
Patent Applications: 36
- 350 Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.)
Patents: 1405
Patent Applications: 217
- 351 Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)
Patents: 793
Patent Applications: 245
- 352 Substrate is single crystal insulator (e.g., sapphire or spinel)
Patents: 310
Patent Applications: 26
- 353 Single crystal islands of semiconductor layer containing only one active device
Patents: 337
Patent Applications: 40
- 354 Including means to eliminate island edge effects (e.g., insulating filling between islands, or ions in island edges)
Patents: 311
Patent Applications: 18
- 355 With overvoltage protective means
Patents: 1658
Patent Applications: 390
- 356 For protecting against gate insulator breakdown
Patents: 571
Patent Applications: 57
- 357 In complementary field effect transistor integrated circuit
Patents: 524
Patent Applications: 51
- 358 Including resistor element
Patents: 335
Patent Applications: 23
- 359 As thin film structure (e.g., polysilicon resistor)
Patents: 219
Patent Applications: 15
- 360 Protection device includes insulated gate transistor structure (e.g., combined with resistor element)
Patents: 774
Patent Applications: 106
- 361 For operation as bipolar or punchthrough element
Patents: 302
Patent Applications: 26
- 362 Punchthrough or bipolar element
Patents: 392
Patent Applications: 43
- 363 Including resistor element
Patents: 301
Patent Applications: 18
- 364 With resistive gate electrode
Patents: 98
Patent Applications: 15
- 365 With plural, separately connected, gate electrodes in same device
Patents: 589
Patent Applications: 253
- 366 Overlapping gate electrodes
Patents: 176
Patent Applications: 21
- 367 Insulated gate controlled breakdown of pn junction (e.g., field plate diode)
Patents: 120
Patent Applications: 23
- 368 Insulated gate field effect transistor in integrated circuit
Patents: 1095
Patent Applications: 692
- 369 Complementary insulated gate field effect transistors
Patents: 1857
Patent Applications: 1106
- 370 Combined with bipolar transistor
Patents: 692
Patent Applications: 79
- 371 Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells
Patents: 734
Patent Applications: 148
- 372 With means to prevent latchup or parasitic conduction channels
Patents: 439
Patent Applications: 34
- 373 With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action
Patents: 165
Patent Applications: 6
- 374 Dielectric isolation means (e.g., dielectric layer in vertical grooves)
Patents: 494
Patent Applications: 138
- 375 With means to reduce substrate spreading resistance (e.g., heavily doped substrate)
Patents: 79
Patent Applications: 4
- 376 With barrier region of reduced minority carrier lifetime (e.g., heavily doped P+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region)
Patents: 202
Patent Applications: 8
- 377 With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide)
Patents: 377
Patent Applications: 44
- 378 Combined with bipolar transistor
Patents: 598
Patent Applications: 64
- 379 Combined with passive components (e.g., resistors)
Patents: 696
Patent Applications: 190
- 380 Polysilicon resistor
Patents: 255
Patent Applications: 32
- 381 With multiple levels of polycrystalline silicon
Patents: 103
Patent Applications: 1
- 382 With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
Patents: 823
Patent Applications: 139
- 383 Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium)
Patents: 352
Patent Applications: 37
- 384 Including silicide
Patents: 585
Patent Applications: 165
- 385 Multiple polysilicon layers
Patents: 174
Patent Applications: 5
- 386 With means to reduce parasitic capacitance
Patents: 178
Patent Applications: 21
- 387 Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate)
Patents: 175
Patent Applications: 20
- 388 Gate electrode consists of refractory or platinum group metal or silicide
Patents: 230
Patent Applications: 32
- 389 With thick insulator over source or drain region
Patents: 162
Patent Applications: 5
- 390 Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM))
Patents: 1042
Patent Applications: 244
- 391 Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations)
Patents: 405
Patent Applications: 74
- 392 Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)
Patents: 493
Patent Applications: 195
- 393 Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor
Patents: 339
Patent Applications: 65
- 394 With means to prevent parasitic conduction channels
Patents: 190
Patent Applications: 16
- 395 Thick insulator portion
Patents: 132
Patent Applications: 13
- 396 Recessed into semiconductor surface
Patents: 249
Patent Applications: 28
- 397 In vertical-walled groove
Patents: 213
Patent Applications: 24
- 398 Combined with heavily doped channel stop portion
Patents: 136
Patent Applications: 1
- 399 Combined with heavily doped channel stop portion
Patents: 114
Patent Applications: 1
- 400 With heavily doped channel stop portion
Patents: 98
Patent Applications: 8
- 401 With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET)
Patents: 1694
Patent Applications: 423
- 402 With permanent threshold adjustment (e.g., depletion mode)
Patents: 293
Patent Applications: 91
- 403 With channel conductivity dopant same type as that of source and drain
Patents: 170
Patent Applications: 7
- 404 Non-uniform channel doping
Patents: 153
Patent Applications: 6
- 405 With gate insulator containing specified permanent charge
Patents: 94
Patent Applications: 13
- 406 Plural gate insulator layers
Patents: 161
Patent Applications: 15
- 407 With gate electrode of controlled workfunction material (e.g., low workfunction gate material)
Patents: 331
Patent Applications: 65
- 408 Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)
Patents: 1213
Patent Applications: 325
- 409 With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)
Patents: 620
Patent Applications: 129
- 410 Gate insulator includes material (including air or vacuum) other than SiO 2
Patents: 904
Patent Applications: 331
- 411 Composite or layered gate insulator (e.g., mixture such as silicon oxynitride)
Patents: 881
Patent Applications: 382
- 412 Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
Patents: 1036
Patent Applications: 335
- 413 Polysilicon laminated with silicide
Patents: 473
Patent Applications: 97
- 414 RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)
Patents: 950
Patent Applications: 383
- 415 Physical deformation
Patents: 904
Patent Applications: 514
- 416 Acoustic wave
Patents: 229
Patent Applications: 148
- 417 Strain sensors
Patents: 554
Patent Applications: 126
- 418 With means to concentrate stress
Patents: 226
Patent Applications: 40
- 419 With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge)
Patents: 527
Patent Applications: 113
- 420 Means to reduce sensitivity to physical deformation
Patents: 180
Patent Applications: 6
- 421 Magnetic field
Patents: 860
Patent Applications: 583
- 422 With magnetic field directing means (e.g., shield, pole piece, etc.)
Patents: 223
Patent Applications: 28
- 423 Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor)
Patents: 92
Patent Applications: 12
- 424 Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)
Patents: 54
Patent Applications: 2
- 425 Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.)
Patents: 95
Patent Applications: 8
- 426 Differential output (e.g., with offset adjustment means or with means to reduce temperature sensitivity)
Patents: 70
Patent Applications: 2
- 427 Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit)
Patents: 185
Patent Applications: 40
- 428 Electromagnetic or particle radiation
Patents: 241
Patent Applications: 101
- 429 Charged or elementary particles
Patents: 116
Patent Applications: 52
- 430 With active region having effective impurity concentration less than 10 12 atoms/cm 3
Patents: 24
Patent Applications: 2
- 431 Light
Patents: 937
Patent Applications: 305
- 432 With optical element
Patents: 1289
Patent Applications: 1080
- 433 With housing or encapsulation
Patents: 917
Patent Applications: 281
- 434 With window means
Patents: 497
Patent Applications: 156
- 435 With optical shield or mask means
Patents: 536
Patent Applications: 140
- 436 With means for increasing light absorption (e.g., redirection of unabsorbed light)
Patents: 486
Patent Applications: 69
- 437 Antireflection coating
Patents: 324
Patent Applications: 79
- 438 Avalanche junction
Patents: 208
Patent Applications: 80
- 439 Containing dopant adapted for photoionization
Patents: 75
Patent Applications: 17
- 440 With different sensor portions responsive to different wavelengths (e.g., color imager)
Patents: 420
Patent Applications: 91
- 441 Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe)
Patents: 89
Patent Applications: 7
- 442 II-VI compound semiconductor (e.g., HgCdTe)
Patents: 219
Patent Applications: 14
- 443 Matrix or array (e.g., single line arrays)
Patents: 681
Patent Applications: 232
- 444 Light sensor elements overlie active switching elements in integrated circuit (e.g., where the sensor elements are deposited on an integrated circuit)
Patents: 266
Patent Applications: 42
- 445 With antiblooming means
Patents: 57
Patent Applications: 5
- 446 With specific isolation means in integrated circuit
Patents: 295
Patent Applications: 54
- 447 With backside illumination (e.g., having a thinned central area or a non-absorbing substrate)
Patents: 116
Patent Applications: 56
- 448 With particular electrode configuration
Patents: 476
Patent Applications: 48
- 449 Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide))
Patents: 181
Patent Applications: 17
- 450 With doping profile to adjust barrier height
Patents: 29
Patent Applications: 1
- 451 Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor)
Patents: 62
Patent Applications: 4
- 452 With edge protection, e.g., doped guard ring or mesa structure
Patents: 112
Patent Applications: 8
- 453 With specified Schottky metallic layer
Patents: 87
Patent Applications: 9
- 454 Schottky metallic layer is a silicide
Patents: 27
Patent Applications: 1
- 455 Silicide of Platinum group metal
Patents: 42
Patent Applications: 2
- 456 Silicide of refractory metal
Patents: 24
Patent Applications: 2
- 457 With particular contact geometry (e.g., ring or grid)
Patents: 128
Patent Applications: 6
- 458 PIN detector, including combinations with non-light responsive active devices
Patents: 726
Patent Applications: 132
- 459 With particular contact geometry (e.g., ring or grid, or bonding pad arrangement)
Patents: 440
Patent Applications: 109
- 460 With backside illumination (e.g., with a thinned central area or non-absorbing substrate)
Patents: 108
Patent Applications: 42
- 461 Light responsive pn junction
Patents: 793
Patent Applications: 186
- 462 Phototransistor
Patents: 306
Patent Applications: 74
- 463 With particular doping concentration
Patents: 190
Patent Applications: 45
- 464 With particular layer thickness (e.g., layer less than light absorption depth)
Patents: 205
Patent Applications: 9
- 465 Geometric configuration of junction (e.g., fingers)
Patents: 217
Patent Applications: 7
- 466 External physical configuration of semiconductor (e.g., mesas, grooves)
Patents: 381
Patent Applications: 38
- 467 Temperature
Patents: 421
Patent Applications: 104
- 468 Semiconductor device operated at cryogenic temperature
Patents: 35
Patent Applications: 1
- 469 With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element)
Patents: 112
Patent Applications: 3
- 470 Pn junction adapted as temperature sensor
Patents: 130
Patent Applications: 25
- 471 SCHOTTKY BARRIER
Patents: 275
Patent Applications: 109
- 472 To compound semiconductor
Patents: 192
Patent Applications: 28
- 473 With specified Schottky metal
Patents: 143
Patent Applications: 16
- 474 As active junction in bipolar transistor (e.g., Schottky collector)
Patents: 74
Patent Applications: 5
- 475 With doping profile to adjust barrier height
Patents: 97
Patent Applications: 16
- 476 In integrated structure
Patents: 181
Patent Applications: 59
- 477 With bipolar transistor
Patents: 117
Patent Applications: 4
- 478 Plural Schottky barriers with different barrier heights
Patents: 37
Patent Applications: 3
- 479 Connected across base-collector junction of transistor (e.g., Baker clamp)
Patents: 49
Patent Applications: 3
- 480 In voltage variable capacitance diode
Patents: 54
Patent Applications: 12
- 481 Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts)
Patents: 104
Patent Applications: 21
- 482 Microwave transit time device (e.g., IMPATT diode)
Patents: 35
Patent Applications: 5
- 483 With means to prevent edge breakdown
Patents: 81
Patent Applications: 15
- 484 Guard ring
Patents: 176
Patent Applications: 32
- 485 Specified materials
Patents: 119
Patent Applications: 18
- 486 Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer)
Patents: 181
Patent Applications: 17
- 487 WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD
Patents: 177
Patent Applications: 39
- 488 Field relief electrode
Patents: 214
Patent Applications: 17
- 489 Resistive
Patents: 97
Patent Applications: 3
- 490 Combined with floating pn junction guard region
Patents: 118
Patent Applications: 10
- 491 In integrated circuit
Patents: 160
Patent Applications: 40
- 492 With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)
Patents: 238
Patent Applications: 72
- 493 With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)
Patents: 234
Patent Applications: 54
- 494 Reverse-biased pn junction guard region
Patents: 86
Patent Applications: 10
- 495 Floating pn junction guard region
Patents: 139
Patent Applications: 20
- 496 With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)
Patents: 136
Patent Applications: 15
- 497 PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE)
Patents: 84
Patent Applications: 3
- 498 Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "Bipolar SIT" devices)
Patents: 43
Patent Applications: 3
- 499 INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS
Patents: 438
Patent Applications: 243
- 500 Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit
Patents: 406
Patent Applications: 114
- 501 Including dielectric isolation means
Patents: 296
Patent Applications: 50
- 502 High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact)
Patents: 130
Patent Applications: 10
- 503 With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit)
Patents: 217
Patent Applications: 49
- 504 Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation)
Patents: 58
Patent Applications: 16
- 505 With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material
Patents: 86
Patent Applications: 4
- 506 Including dielectric isolation means
Patents: 914
Patent Applications: 536
- 507 With single crystal insulating substrate (e.g., sapphire)
Patents: 131
Patent Applications: 55
- 508 With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
Patents: 414
Patent Applications: 71
- 509 Combined with pn junction isolation (e.g., isoplanar, LOCOS)
Patents: 197
Patent Applications: 33
- 510 Dielectric in groove
Patents: 949
Patent Applications: 319
- 511 With complementary (npn and pnp) bipolar transistor structures
Patents: 146
Patent Applications: 7
- 512 Complementary devices share common active region (e.g., integrated injection logic, I 2 L)
Patents: 70
Patent Applications: 1
- 513 Vertical walled groove
Patents: 332
Patent Applications: 40
- 514 With active junction abutting groove (e.g., "walled emitter")
Patents: 125
Patent Applications: 2
- 515 With active junction abutting groove (e.g., "walled emitter")
Patents: 110
Patent Applications: 1
- 516 With passive component (e.g., resistor, capacitor, etc.)
Patents: 215
Patent Applications: 36
- 517 With bipolar transistor structure
Patents: 245
Patent Applications: 16
- 518 With polycrystalline connecting region (e.g., polysilicon base contact)
Patents: 169
Patent Applications: 0
- 519 Including heavily doped channel stop region adjacent groove
Patents: 173
Patent Applications: 9
- 520 Conductive filling in dielectric-lined groove (e.g., polysilicon backfill)
Patents: 285
Patent Applications: 31
- 521 Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.)
Patents: 67
Patent Applications: 5
- 522 Air isolation (e.g., beam lead supported semiconductor islands)
Patents: 411
Patent Applications: 56
- 523 Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)
Patents: 95
Patent Applications: 4
- 524 Full dielectric isolation with polycrystalline semiconductor substrate
Patents: 170
Patent Applications: 5
- 525 With complementary (npn and pnp) bipolar transistor structures
Patents: 68
Patent Applications: 1
- 526 With bipolar transistor structure
Patents: 135
Patent Applications: 23
- 527 Sides of isolated semiconductor islands along major crystal planes (e.g., (111), (100) planes, etc.)
Patents: 33
Patent Applications: 1
- 528 Passive components in ICs
Patents: 584
Patent Applications: 167
- 529 Including programmable passive component (e.g., fuse)
Patents: 1035
Patent Applications: 437
- 530 Anti-fuse
Patents: 788
Patent Applications: 173
- 531 Including inductive element
Patents: 764
Patent Applications: 347
- 532 Including capacitor component
Patents: 1576
Patent Applications: 1006
- 533 Combined with resistor to form RC filter structure
Patents: 176
Patent Applications: 23
- 534 With means to increase surface area (e.g., grooves, ridges, etc.)
Patents: 248
Patent Applications: 57
- 535 Both terminals of capacitor isolated from substrate
Patents: 215
Patent Applications: 50
- 536 Including resistive element
Patents: 672
Patent Applications: 208
- 537 Using specific resistive material
Patents: 278
Patent Applications: 50
- 538 Polycrystalline silicon (doped or undoped)
Patents: 292
Patent Applications: 40
- 539 Combined with bipolar transistor
Patents: 131
Patent Applications: 9
- 540 With compensation for non-linearity (e.g., dynamic isolation pocket bias)
Patents: 22
Patent Applications: 1
- 541 Pinch resistor
Patents: 50
Patent Applications: 1
- 542 Resistor has same doping as emitter or collector of bipolar transistor
Patents: 35
Patent Applications: 1
- 543 Lightly doped junction isolated resistor (e.g., ion implanted resistor)
Patents: 45
Patent Applications: 4
- 544 With pn junction isolation
Patents: 214
Patent Applications: 32
- 545 With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)
Patents: 38
Patent Applications: 3
- 546 With structural means to protect against excess or reversed polarity voltage
Patents: 242
Patent Applications: 20
- 547 With structural means to control parasitic transistor action or leakage current
Patents: 166
Patent Applications: 9
- 548 At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit)
Patents: 80
Patent Applications: 4
- 549 With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)
Patents: 110
Patent Applications: 2
- 550 With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent
Patents: 66
Patent Applications: 6
- 551 Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage)
Patents: 149
Patent Applications: 3
- 552 With bipolar transistor structure
Patents: 223
Patent Applications: 16
- 553 Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics
Patents: 41
Patent Applications: 1
- 554 With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact)
Patents: 61
Patent Applications: 1
- 555 Complementary bipolar transistor structures (e.g., integrated injection logic, I 2 L)
Patents: 108
Patent Applications: 3
- 556 Including lateral bipolar transistor structure
Patents: 125
Patent Applications: 0
- 557 Lateral bipolar transistor structure
Patents: 245
Patent Applications: 12
- 558 With base region doping concentration step or gradient or with means to increase current gain
Patents: 66
Patent Applications: 2
- 559 With active region formed along groove or exposed edge in semiconductor
Patents: 74
Patent Applications: 2
- 560 With multiple collectors or emitters
Patents: 93
Patent Applications: 1
- 561 With different emitter to collector spacings or facing areas
Patents: 42
Patent Applications: 1
- 562 With auxiliary collector/re-emitter between emitter and output collector (e.g., "Current Hogging Logic" device)
Patents: 24
Patent Applications: 0
- 563 With multiple separately connected emitter, collector, or base regions in same transistor structure
Patents: 81
Patent Applications: 1
- 564 Multiple base or collector regions
Patents: 59
Patent Applications: 0
- 565 BIPOLAR TRANSISTOR STRUCTURE
Patents: 550
Patent Applications: 194
- 566 Plural non-isolated transistor structures in same structure
Patents: 131
Patent Applications: 21
- 567 Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor)
Patents: 59
Patent Applications: 6
- 568 More than two Darlington-connected transistors
Patents: 25
Patent Applications: 3
- 569 Complementary Darlington-connected transistors
Patents: 20
Patent Applications: 1
- 570 With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.)
Patents: 51
Patent Applications: 1
- 571 Non-planar structure (e.g., mesa emitter, or having a groove to define resistor)
Patents: 64
Patent Applications: 4
- 572 With resistance means connected between transistor base regions
Patents: 42
Patent Applications: 1
- 573 With housing or contact structure or configuration
Patents: 26
Patent Applications: 7
- 574 Complementary transistors share common active region (e.g., integrated injection logic, I 2 L)
Patents: 94
Patent Applications: 8
- 575 Including lateral bipolar transistor structure
Patents: 181
Patent Applications: 9
- 576 With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal)
Patents: 75
Patent Applications: 2
- 577 Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)
Patents: 383
Patent Applications: 34
- 578 With enlarged emitter area (e.g., power device)
Patents: 145
Patent Applications: 11
- 579 With separate emitter areas connected in parallel
Patents: 121
Patent Applications: 4
- 580 With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means)
Patents: 73
Patent Applications: 5
- 581 Thin film ballasting means (e.g., polysilicon resistor)
Patents: 35
Patent Applications: 1
- 582 With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)
Patents: 67
Patent Applications: 1
- 583 With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)
Patents: 67
Patent Applications: 2
- 584 With housing or contact (i.e., electrode) means
Patents: 133
Patent Applications: 9
- 585 With means to increase inverse gain
Patents: 41
Patent Applications: 3
- 586 With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.)
Patents: 367
Patent Applications: 22
- 587 With specified electrode means
Patents: 310
Patent Applications: 29
- 588 Including polycrystalline semiconductor as connection
Patents: 352
Patent Applications: 14
- 589 Avalanche transistor
Patents: 21
Patent Applications: 1
- 590 With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)
Patents: 73
Patent Applications: 1
- 591 With emitter region having specified doping concentration profile (e.g., high-low concentration step)
Patents: 129
Patent Applications: 16
- 592 With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))
Patents: 495
Patent Applications: 36
- 593 With means to increase current gain or operating frequency
Patents: 266
Patent Applications: 12
- 594 WITH GROOVE TO DEFINE PLURAL DIODES
Patents: 73
Patent Applications: 8
- 595 VOLTAGE VARIABLE CAPACITANCE DEVICE
Patents: 146
Patent Applications: 48
- 596 With specified dopant profile
Patents: 56
Patent Applications: 6
- 597 Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)
Patents: 19
Patent Applications: 2
- 598 With plural junctions whose depletion regions merge to vary voltage dependence
Patents: 31
Patent Applications: 8
- 599 With means to increase active junction area (e.g., grooved or convoluted surface)
Patents: 29
Patent Applications: 3
- 600 With physical configuration to vary voltage dependence (e.g., mesa)
Patents: 47
Patent Applications: 6
- 601 Plural diodes in same non-isolated structure, or device having three or more terminals
Patents: 76
Patent Applications: 8
- 602 With specified housing or contact
Patents: 38
Patent Applications: 12
- 603 AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
Patents: 227
Patent Applications: 32
- 604 Microwave transit time device (e.g., IMPATT diode)
Patents: 74
Patent Applications: 3
- 605 With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage)
Patents: 75
Patent Applications: 10
- 606 Subsurface breakdown
Patents: 72
Patent Applications: 1
- 607 WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)
Patents: 301
Patent Applications: 75
- 608 Switching device based on filling and emptying of deep energy levels
Patents: 39
Patent Applications: 2
- 609 For compound semiconductor (e.g., deep level dopant)
Patents: 109
Patent Applications: 13
- 610 Deep level dopant
Patents: 102
Patent Applications: 3
- 611 With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient)
Patents: 121
Patent Applications: 6
- 612 Deep level dopant other than gold or platinum
Patents: 74
Patent Applications: 3
- 613 INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE)
Patents: 232
Patent Applications: 96
- 614 Group II-VI compound (e.g., CdTe, Hg x Cd 1-x Te)
Patents: 102
Patent Applications: 22
- 615 Group III-V compound (e.g., InP)
Patents: 281
Patent Applications: 345
- 616 Containing germanium, Ge
Patents: 395
Patent Applications: 110
- 617 INCLUDING REGION CONTAINING CRYSTAL DAMAGE
Patents: 207
Patent Applications: 71
- 618 PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
Patents: 570
Patent Applications: 396
- 619 With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support)
Patents: 147
Patent Applications: 55
- 620 With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area)
Patents: 690
Patent Applications: 316
- 621 With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body)
Patents: 431
Patent Applications: 250
- 622 Groove
Patents: 723
Patent Applications: 162
- 623 Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper)
Patents: 430
Patent Applications: 76
- 624 With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)
Patents: 79
Patent Applications: 2
- 625 Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)
Patents: 110
Patent Applications: 3
- 626 Combined with passivating coating
Patents: 160
Patent Applications: 14
- 627 With specified crystal plane or axis
Patents: 442
Patent Applications: 101
- 628 Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.)
Patents: 219
Patent Applications: 26
- 629 WITH MEANS TO CONTROL SURFACE EFFECTS
Patents: 196
Patent Applications: 95
- 630 With inversion-preventing shield electrode
Patents: 145
Patent Applications: 6
- 631 In compound semiconductor material (e.g., GaAs)
Patents: 110
Patent Applications: 12
- 632 Insulating coating
Patents: 462
Patent Applications: 289
- 633 With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor)
Patents: 73
Patent Applications: 5
- 634 Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass)
Patents: 109
Patent Applications: 6
- 635 Multiple layers
Patents: 472
Patent Applications: 156
- 636 At least one layer of semi-insulating material
Patents: 85
Patent Applications: 6
- 637 Three or more insulating layers
Patents: 307
Patent Applications: 45
- 638 With discontinuous or varying thickness layer (e.g., layer covers only selected portions of semiconductor)
Patents: 180
Patent Applications: 5
- 639 At least one layer of silicon oxynitride
Patents: 221
Patent Applications: 24
- 640 At least one layer of silicon nitride
Patents: 494
Patent Applications: 44
- 641 Combined with glass layer
Patents: 109
Patent Applications: 5
- 642 At least one layer of organic material
Patents: 423
Patent Applications: 74
- 643 Polyimide or polyamide
Patents: 203
Patent Applications: 30
- 644 At least one layer of glass
Patents: 154
Patent Applications: 8
- 645 Insulating layer containing specified electrical charge (e.g., net negative electrical charge)
Patents: 56
Patent Applications: 4
- 646 Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide)
Patents: 139
Patent Applications: 15
- 647 Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide)
Patents: 309
Patent Applications: 25
- 648 Combined with channel stop region in semiconductor
Patents: 106
Patent Applications: 0
- 649 Insulating layer of silicon nitride or silicon oxynitride
Patents: 309
Patent Applications: 61
- 650 Insulating layer of glass
Patents: 122
Patent Applications: 3
- 651 Details of insulating layer electrical charge (e.g., negative insulator layer charge)
Patents: 48
Patent Applications: 6
- 652 Channel stop layer
Patents: 80
Patent Applications: 5
- 653 WITH SPECIFIED SHAPE OF PN JUNCTION
Patents: 190
Patent Applications: 34
- 654 Interdigitated pn junction or more heavily doped side of junction is concave
Patents: 38
Patent Applications: 1
- 655 WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT
Patents: 267
Patent Applications: 60
- 656 With high resistivity (e.g., "intrinsic") layer between P and N layers (e.g., PIN diode)
Patents: 234
Patent Applications: 39
- 657 Stepped profile
Patents: 89
Patent Applications: 4
- 658 PLATE TYPE RECTIFIER ARRAY
Patents: 38
Patent Applications: 1
- 659 WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)
Patents: 870
Patent Applications: 314
- 660 With means to shield device contained in housing or package from charged particles (e.g., alpha particles) or highly ionizing radiation (i.e., hard X-rays or shorter wavelength)
Patents: 254
Patent Applications: 97
- 661 SUPERCONDUCTIVE CONTACT OR LEAD
Patents: 93
Patent Applications: 4
- 662 Transmission line or shielded
Patents: 136
Patent Applications: 13
- 663 On integrated circuit
Patents: 95
Patent Applications: 2
- 664 TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.)
Patents: 450
Patent Applications: 90
- 665 CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS
Patents: 345
Patent Applications: 33
- 666 LEAD FRAME
Patents: 2774
Patent Applications: 739
- 667 With dam or vent for encapsulant
Patents: 485
Patent Applications: 39
- 668 On insulating carrier other than a printed circuit board
Patents: 1323
Patent Applications: 100
- 669 With stress relief
Patents: 541
Patent Applications: 58
- 670 With separate tie bar element or plural tie bars
Patents: 439
Patent Applications: 95
- 671 Of insulating material
Patents: 131
Patent Applications: 4
- 672 Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip
Patents: 387
Patent Applications: 24
- 673 With bumps on ends of lead fingers to connect to semiconductor
Patents: 579
Patent Applications: 85
- 674 With means for controlling lead tension
Patents: 275
Patent Applications: 13
- 675 With heat sink means
Patents: 752
Patent Applications: 182
- 676 With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED)
Patents: 2055
Patent Applications: 908
- 677 Of specified material other than copper (e.g., Kovar (T.M.))
Patents: 223
Patent Applications: 36
- 678 HOUSING OR PACKAGE
Patents: 2422
Patent Applications: 891
- 679 Smart (e.g., credit) card package
Patents: 708
Patent Applications: 193
- 680 With window means
Patents: 782
Patent Applications: 152
- 681 For erasing EPROM
Patents: 68
Patent Applications: 9
- 682 With desiccant, getter, or gas filling
Patents: 153
Patent Applications: 45
- 683 With means to prevent explosion of package
Patents: 48
Patent Applications: 4
- 684 With semiconductor element forming part (e.g., base, of housing)
Patents: 755
Patent Applications: 86
- 685 Multiple housings
Patents: 803
Patent Applications: 121
- 686 Stacked arrangement
Patents: 2863
Patent Applications: 1317
- 687 Housing or package filled with solid or liquid electrically insulating material
Patents: 680
Patent Applications: 93
- 688 With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring
Patents: 346
Patent Applications: 40
- 689 Rigid electrode portion
Patents: 163
Patent Applications: 12
- 690 With contact or lead
Patents: 1472
Patent Applications: 899
- 691 Having power distribution means (e.g., bus structure)
Patents: 1451
Patent Applications: 255
- 692 With particular lead geometry
Patents: 1573
Patent Applications: 494
- 693 External connection to housing
Patents: 973
Patent Applications: 212
- 694 Axial leads
Patents: 96
Patent Applications: 5
- 695 Fanned/radial leads
Patents: 118
Patent Applications: 4
- 696 Bent (e.g., J-shaped) lead
Patents: 638
Patent Applications: 46
- 697 Pin grid type
Patents: 555
Patent Applications: 46
- 698 With specific electrical feedthrough structure
Patents: 1623
Patent Applications: 398
- 699 Housing entirely of metal except for feedthrough structure
Patents: 126
Patent Applications: 15
- 700 Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package)
Patents: 1589
Patent Applications: 344
- 701 Insulating material
Patents: 928
Patent Applications: 141
- 702 Of insulating material other than ceramic
Patents: 414
Patent Applications: 57
- 703 Composite ceramic, or single ceramic with metal
Patents: 404
Patent Applications: 34
- 704 Cap or lid
Patents: 1131
Patent Applications: 203
- 705 Of high thermal conductivity ceramic (e.g., BeO)
Patents: 250
Patent Applications: 9
- 706 With heat sink
Patents: 1674
Patent Applications: 326
- 707 Directly attached to semiconductor device
Patents: 1206
Patent Applications: 98
- 708 Entirely of metal except for feedthrough
Patents: 145
Patent Applications: 15
- 709 With specified insulator to isolate device from housing
Patents: 124
Patent Applications: 6
- 710 With specified means (e.g., lip) to seal base to cap
Patents: 350
Patent Applications: 7
- 711 With raised portion of base for mounting semiconductor chip
Patents: 151
Patent Applications: 6
- 712 With provision for cooling the housing or its contents
Patents: 1789
Patent Applications: 428
- 713 For integrated circuit
Patents: 1325
Patent Applications: 172
- 714 Liquid coolant
Patents: 943
Patent Applications: 99
- 715 Boiling (evaporative) liquid
Patents: 518
Patent Applications: 38
- 716 Cryogenic liquid coolant
Patents: 81
Patent Applications: 0
- 717 Isolation of cooling means (e.g., heat sink) by an electrically insulating element (e.g., spacer)
Patents: 697
Patent Applications: 76
- 718 Heat dissipating element held in place by clamping or spring means
Patents: 915
Patent Applications: 71
- 719 Pressed against semiconductor element
Patents: 1010
Patent Applications: 32
- 720 Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink)
Patents: 556
Patent Applications: 96
- 721 With gas coolant
Patents: 149
Patent Applications: 9
- 722 With fins
Patents: 806
Patent Applications: 36
- 723 For plural devices
Patents: 2417
Patent Applications: 465
- 724 With discrete components
Patents: 1512
Patent Applications: 178
- 725 With electrical isolation means
Patents: 301
Patent Applications: 16
- 726 Devices held in place by clamping
Patents: 256
Patent Applications: 12
- 727 Device held in place by clamping
Patents: 634
Patent Applications: 28
- 728 For high frequency (e.g., microwave) device
Patents: 735
Patent Applications: 82
- 729 Portion of housing of specific materials
Patents: 290
Patent Applications: 41
- 730 Outside periphery of package having specified shape or configuration
Patents: 706
Patent Applications: 42
- 731 With housing mount
Patents: 197
Patent Applications: 24
- 732 Flanged mount
Patents: 117
Patent Applications: 11
- 733 Stud mount
Patents: 76
Patent Applications: 2
- 734 COMBINED WITH ELECTRICAL CONTACT OR LEAD
Patents: 1201
Patent Applications: 533
- 735 Beam leads (i.e., leads that extend beyond the ends or sides of a chip component)
Patents: 419
Patent Applications: 70
- 736 Layered
Patents: 214
Patent Applications: 13
- 737 Bump leads
Patents: 2422
Patent Applications: 1637
- 738 Ball shaped
Patents: 2138
Patent Applications: 886
- 739 With textured surface
Patents: 158
Patent Applications: 22
- 740 With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking")
Patents: 81
Patent Applications: 2
- 741 Of specified material other than unalloyed aluminum
Patents: 349
Patent Applications: 277
- 742 With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal)
Patents: 88
Patent Applications: 4
- 743 For compound semiconductor material
Patents: 86
Patent Applications: 3
- 744 For compound semiconductor material
Patents: 162
Patent Applications: 25
- 745 Contact for III-V material
Patents: 224
Patent Applications: 25
- 746 Composite material (e.g., fibers or strands embedded in solid matrix)
Patents: 191
Patent Applications: 41
- 747 With thermal expansion matching of contact or lead material to semiconductor active device
Patents: 167
Patent Applications: 10
- 748 Plural layers of specified contact or lead material
Patents: 208
Patent Applications: 7
- 749 At least portion of which is transparent to ultraviolet, visible or infrared light
Patents: 157
Patent Applications: 22
- 750 Layered
Patents: 1201
Patent Applications: 180
- 751 At least one layer forms a diffusion barrier
Patents: 1631
Patent Applications: 770
- 752 Planarized to top of insulating layer
Patents: 573
Patent Applications: 20
- 753 With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer
Patents: 399
Patent Applications: 75
- 754 At least one layer of silicide or polycrystalline silicon
Patents: 565
Patent Applications: 91
- 755 Polysilicon laminated with silicide
Patents: 336
Patent Applications: 14
- 756 Multiple polysilicon layers
Patents: 207
Patent Applications: 13
- 757 Silicide of refractory or platinum group metal
Patents: 311
Patent Applications: 29
- 758 Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit)
Patents: 3783
Patent Applications: 908
- 759 Including organic insulating material between metal levels
Patents: 719
Patent Applications: 120
- 760 Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride)
Patents: 903
Patent Applications: 116
- 761 At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum
Patents: 306
Patent Applications: 55
- 762 At least one layer containing silver or copper
Patents: 1068
Patent Applications: 410
- 763 At least one layer of molybdenum, titanium, or tungsten
Patents: 905
Patent Applications: 109
- 764 Alloy containing molybdenum, titanium, or tungsten
Patents: 588
Patent Applications: 28
- 765 At least one layer of an alloy containing aluminum
Patents: 436
Patent Applications: 40
- 766 At least one layer containing chromium or nickel
Patents: 374
Patent Applications: 48
- 767 Resistive to electromigration or diffusion of the contact or lead material
Patents: 458
Patent Applications: 19
- 768 Refractory or platinum group metal or alloy or silicide thereof
Patents: 391
Patent Applications: 49
- 769 Platinum group metal or silicide thereof
Patents: 181
Patent Applications: 41
- 770 Molybdenum, tungsten, or titanium or their silicides
Patents: 331
Patent Applications: 63
- 771 Alloy containing aluminum
Patents: 263
Patent Applications: 34
- 772 Solder composition
Patents: 368
Patent Applications: 89
- 773 Of specified configuration
Patents: 2241
Patent Applications: 1108
- 774 Via (interconnection hole) shape
Patents: 2770
Patent Applications: 1370
- 775 Varying width or thickness of conductor
Patents: 808
Patent Applications: 83
- 776 Cross-over arrangement, component or structure
Patents: 741
Patent Applications: 110
- 777 Chip mounted on chip
Patents: 2503
Patent Applications: 881
- 778 Flip chip
Patents: 3329
Patent Applications: 826
- 779 Solder wettable contact, lead, or bond
Patents: 1010
Patent Applications: 218
- 780 Ball or nail head type contact, lead, or bond
Patents: 1461
Patent Applications: 186
- 781 Layered contact, lead or bond
Patents: 771
Patent Applications: 90
- 782 Die bond
Patents: 651
Patent Applications: 246
- 783 With adhesive means
Patents: 1192
Patent Applications: 198
- 784 Wire contact, lead, or bond
Patents: 1919
Patent Applications: 501
- 785 By pressure alone
Patents: 278
Patent Applications: 9
- 786 Configuration or pattern of bonds
Patents: 1893
Patent Applications: 344
- 787 ENCAPSULATED
Patents: 2146
Patent Applications: 416
- 788 With specified encapsulant
Patents: 507
Patent Applications: 97
- 789 With specified filler material
Patents: 359
Patent Applications: 33
- 790 Plural encapsulating layers
Patents: 390
Patent Applications: 24
- 791 Including polysiloxane (e.g., silicone resin)
Patents: 184
Patent Applications: 34
- 792 Including polyimide
Patents: 192
Patent Applications: 16
- 793 Including epoxide
Patents: 281
Patent Applications: 37
- 794 Including glass
Patents: 127
Patent Applications: 10
- 795 With specified filler material
Patents: 243
Patent Applications: 13
- 796 With heat sink embedded in encapsulant
Patents: 595
Patent Applications: 17
- 797 ALIGNMENT MARKS
Patents: 885
Patent Applications: 266
- 798 MISCELLANEOUS
Patents: 197
Patent Applications: 46
- E47.001 BULK NEGATIVE RESISTANCE EFFECT DEVICES, E.G., GUNN-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
Patents: 10
Patent Applications: 488
- E47.002 Gunn-effect devices or transferred electron devices (EPO)
Patents: 16
Patent Applications: 5
- E47.003 Controlled by electromagnetic radiation (EPO)
Patents: 1
Patent Applications: 0
- E47.004 Gunn diodes (EPO)
Patents: 23
Patent Applications: 3
- E47.005 Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO)
Patents: 2
Patent Applications: 87
- E39.001 DEVICES USING SUPERCONDUCTIVITY, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
Patents: 9
Patent Applications: 3
- E39.002 Containers or mountings (EPO)
Patents: 10
Patent Applications: 0
- E39.003 For Josephson devices (EPO)
Patents: 5
Patent Applications: 0
- E39.004 Characterized by current path (EPO)
Patents: 2
Patent Applications: 0
- E39.005 Characterized by shape of element (EPO)
Patents: 3
Patent Applications: 1
- E39.006 Characterized by material (EPO)
Patents: 59
Patent Applications: 6
- E39.007 Organic materials (EPO)
Patents: 34
Patent Applications: 3
- E39.008 Fullerene superconductors, e.g., soccerball-shaped allotrope of carbon, e.g., C60, C94 (EPO)
Patents: 9
Patent Applications: 0
- E39.009 Ceramic materials (EPO)
Patents: 18
Patent Applications: 0
- E39.01 Comprising copper oxide (EPO)
Patents: 256
Patent Applications: 1
- E39.011 Multilayered structures, e.g., super lattices (EPO)
Patents: 32
Patent Applications: 0
- E39.012 Devices comprising junction of dissimilar materials, e.g., Josephson-effect devices (EPO)
Patents: 14
Patent Applications: 6
- E39.013 Single electron tunnelling devices (EPO)
Patents: 5
Patent Applications: 4
- E39.014 Josephson-effect devices (EPO)
Patents: 82
Patent Applications: 18
- E39.015 Comprising high Tc ceramic materials (EPO)
Patents: 120
Patent Applications: 1
- E39.016 Three or more electrode devices, e.g., transistor-like structures (EPO)
Patents: 65
Patent Applications: 2
- E39.017 Permanent superconductor devices (EPO)
Patents: 120
Patent Applications: 1
- E39.018 Comprising high Tc ceramic materials (EPO)
Patents: 206
Patent Applications: 1
- E39.019 Three or more electrode devices (EPO)
Patents: 11
Patent Applications: 0
- E39.02 Field-effect devices (EPO)
Patents: 64
Patent Applications: 1
- E51.001 ORGANIC SOLID STATE DEVICES, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES OR OF PARTS THEREOF
Patents: 31
Patent Applications: 261
- E51.002 Structural detail of device (EPO)
Patents: 3
Patent Applications: 59
- E51.003 Organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
Patents: 12
Patent Applications: 54
- E51.004 Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO)
Patents: 15
Patent Applications: 8
- E51.005 Field-effect device (e.g., TFT, FET) (EPO)
Patents: 103
Patent Applications: 156
- E51.006 Insulated gate field-effect transistor (EPO)
Patents: 83
Patent Applications: 256
- E51.007 Comprising organic gate dielectric (EPO)
Patents: 45
Patent Applications: 57
- E51.008 Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (e.g., two terminal device) (EPO)
Patents: 2
Patent Applications: 13
- E51.009 Comprising Schottky junction (EPO)
Patents: 5
Patent Applications: 2
- E51.01 Comprising organic/organic junction (e.g., heterojunction) (EPO)
Patents: 10
Patent Applications: 2
- E51.011 Comprising organic/inorganic heterojunction (EPO)
Patents: 14
Patent Applications: 1
- E51.012 Radiation-sensitive organic solid-state device (EPO)
Patents: 81
Patent Applications: 95
- E51.013 Metal-organic semiconductor-metal device (EPO)
Patents: 16
Patent Applications: 7
- E51.014 Comprising bulk heterojunction (EPO)
Patents: 18
Patent Applications: 6
- E51.015 Comprising organic/inorganic heterojunction (EPO)
Patents: 5
Patent Applications: 8
- E51.016 Majority carrier device using sensitization of wide band gap semiconductor (e.g., TiO 2 ) (EPO)
Patents: 15
Patent Applications: 2
- E51.017 Comprising organic semiconductor-organic semiconductor heterojunction (EPO)
Patents: 29
Patent Applications: 12
- E51.018 Light-emitting organic solid-state device with potential or surface barrier (EPO)
Patents: 45
Patent Applications: 772
- E51.019 Electrode (EPO)
Patents: 16
Patent Applications: 104
- E51.02 Encapsulation (EPO)
Patents: 11
Patent Applications: 102
- E51.021 Arrangements for extracting light from device (e.g., Bragg reflector pair) (EPO)
Patents: 5
Patent Applications: 10
- E51.022 Multicolor organic light-emitting device (OLED) (EPO)
Patents: 45
Patent Applications: 324
- E51.023 Molecular electronic device (EPO)
Patents: 63
Patent Applications: 10
- E51.024 Selection of material for organic solid-state device (EPO)
Patents: 28
Patent Applications: 238
- E51.025 For organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
Patents: 2
Patent Applications: 95
- E51.026 For radiation-sensitive or light-emitting organic solid-state device with potential or surface barrier (EPO)
Patents: 13
Patent Applications: 285
- E51.027 Organic polymer or oligomer (EPO)
Patents: 22
Patent Applications: 285
- E51.028 Comprising aromatic, heteroaromatic, or arrylic chains (e.g., polyaniline, polyphenylene, polyphenylene vinylene) (EPO)
Patents: 118
Patent Applications: 91
- E51.029 Heteroaromatic compound comprising sulfur or selene (e.g., polythiophene) (EPO)
Patents: 112
Patent Applications: 31
- E51.03 Polyethylene dioxythiophene and derivative (EPO)
Patents: 19
Patent Applications: 8
- E51.031 Polyphenylenevinylene and derivatives (EPO)
Patents: 74
Patent Applications: 9
- E51.032 Polyflurorene and derivative (EPO)
Patents: 30
Patent Applications: 23
- E51.033 Comprising aliphatic or olefinic chains (e.g., polyN-vinylcarbazol, PVC, PTFE) (EPO)
Patents: 35
Patent Applications: 13
- E51.034 Polyacetylene or derivatives (EPO)
Patents: 9
Patent Applications: 3
- E51.035 PolyN-vinylcarbazol and derivative (EPO)
Patents: 14
Patent Applications: 6
- E51.036 Copolymers (EPO)
Patents: 53
Patent Applications: 34
- E51.037 Ladder-type polymer (EPO)
Patents: 13
Patent Applications: 1
- E51.038 Carbon-containing materials (EPO)
Patents: 18
Patent Applications: 9
- E51.039 Fullerenes (EPO)
Patents: 16
Patent Applications: 16
- E51.04 Carbon nanotubes (EPO)
Patents: 56
Patent Applications: 38
- E51.041 Coordination compound (e.g., porphyrin, phthalocyanine, metal(II) polypyridine complexes) (EPO)
Patents: 96
Patent Applications: 190
- E51.042 Phthalocyanine (EPO)
Patents: 53
Patent Applications: 12
- E51.043 Metal complexes comprising Group IIIB metal (Al, Ga, In, or Ti) (e.g., Tris (8-hydroxyquinoline) aluminium (Alq3)) (EPO)
Patents: 91
Patent Applications: 50
- E51.044 Transition metal complexes (e.g., Ru(II) polypyridine complexes) (EPO)
Patents: 104
Patent Applications: 177
- E51.045 Biomolecule or macromolecule (e.g., proteins, ATP, chlorophyl, beta-carotene, lipids, enzymes) (EPO)
Patents: 19
Patent Applications: 11
- E51.046 Silicon-containing organic semiconductor (EPO)
Patents: 52
Patent Applications: 9
- E51.047 Macromolecular system with low molecular weight (e.g., cyanine dyes, coumarine dyes, tetrathiafulvalene) (EPO)
Patents: 180
Patent Applications: 9
- E51.048 Charge transfer complexes (EPO)
Patents: 21
Patent Applications: 5
- E51.049 Polycondensed aromatic or heteroaromatic compound (e.g., pyrene, perylene, pentacene) (EPO)
Patents: 122
Patent Applications: 132
- E51.05 Aromatic compound containing heteroatom (e.g., perylenetetracarboxylic dianhydride, perylene tetracarboxylic diimide) (EPO)
Patents: 49
Patent Applications: 89
- E51.051 Amine compound having at least two aryl on amine-nitrogen atom (e.g., triphenylamine) (EPO)
Patents: 153
Patent Applications: 72
- E51.052 Langmuir Blodgett film (EPO)
Patents: 21
Patent Applications: 0
- E43.001 SEMICONDUCTOR OR SOLID-STATE DEVICES USING GALVANO-MAGNETIC OR SIMILAR MAGNETIC EFFECTS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
Patents: 14
Patent Applications: 42
- E43.002 Hall-effect devices (EPO)
Patents: 24
Patent Applications: 6
- E43.003 Semiconductor Hall-effect devices (EPO)
Patents: 65
Patent Applications: 15
- E43.004 Magnetic-field-controlled resistors (EPO)
Patents: 189
Patent Applications: 30
- E43.005 Selection of materials (EPO)
Patents: 148
Patent Applications: 11
- E43.006 Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO)
Patents: 56
Patent Applications: 71
- E43.007 For Hall-effect devices (EPO)
Patents: 11
Patent Applications: 4
- E33.001 LIGHT EMITTING SEMICONDUCTOR DEVICES HAVING A POTENTIAL OR A SURFACE BARRIER, PROCESSES OR APPARATUS PECULIAR TO THE MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF
Patents: 60
Patent Applications: 959
- E33.002 Device characterized by semiconductor body (EPO)
Patents: 7
Patent Applications: 120
- E33.003 Particular crystalline orientation or structure (EPO)
Patents: 90
Patent Applications: 154
- E33.004 Comprising amorphous semiconductor (EPO)
Patents: 39
Patent Applications: 148
- E33.005 Shape or structure (e.g., shape of epitaxial layer) (EPO)
Patents: 161
Patent Applications: 422
- E33.006 Shape of semiconductor body (EPO)
Patents: 135
Patent Applications: 81
- E33.007 Shape of potential barrier (EPO)
Patents: 75
Patent Applications: 12
- E33.008 Multiple quantum well structure (EPO)
Patents: 222
Patent Applications: 431
- E33.009 Including, apart from doping materials or other only impurities, Group IV element (e.g., Si-SiGe superlattice) (EPO)
Patents: 16
Patent Applications: 2
- E33.01 Doped superlattice (e.g., nipi superlattice) (EPO)
Patents: 4
Patent Applications: 21
- E33.011 For current confinement (EPO)
Patents: 27
Patent Applications: 17
- E33.012 Multiple active regions between two electrodes (e.g., stacks) (EPO)
Patents: 38
Patent Applications: 138
- E33.013 Material of active region (EPO)
Patents: 9
Patent Applications: 281
- E33.014 In different regions (EPO)
Patents: 2
Patent Applications: 20
- E33.015 Comprising only Group IV element (EPO)
Patents: 36
Patent Applications: 10
- E33.016 With heterojunction (EPO)
Patents: 6
Patent Applications: 8
- E33.017 Characterized by doping material (EPO)
Patents: 22
Patent Applications: 2
- E33.018 Including porous Si (EPO)
Patents: 61
Patent Applications: 1
- E33.019 Comprising only Group II-VI compound (EPO)
Patents: 27
Patent Applications: 77
- E33.02 Ternary or quaternary compound (e.g., CdHgTe) (EPO)
Patents: 16
Patent Applications: 5
- E33.021 With heterojunction (EPO)
Patents: 76
Patent Applications: 5
- E33.022 Characterized by doping material (EPO)
Patents: 51
Patent Applications: 5
- E33.023 Comprising only Group III-V compound (EPO)
Patents: 15
Patent Applications: 384
- E33.024 Binary compound (e.g., GaAs) (EPO)
Patents: 21
Patent Applications: 13
- E33.025 Including nitride (e.g., GaN) (EPO)
Patents: 58
Patent Applications: 268
- E33.026 Ternary or quaternary compound (e.g., AlGaAs) (EPO)
Patents: 35
Patent Applications: 21
- E33.027 With heterojunction (EPO)
Patents: 202
Patent Applications: 101
- E33.028 Including nitride (e.g., AlGaN) (EPO)
Patents: 272
Patent Applications: 72
- E33.029 Characterized by doping material (EPO)
Patents: 103
Patent Applications: 3
- E33.03 Nitride compound (EPO)
Patents: 86
Patent Applications: 19
- E33.031 Including ternary or quaternary compound (e.g., AlGaAs) (EPO)
Patents: 1
Patent Applications: 1
- E33.032 With heterojunction (e.g., AlGaAs/GaAs) (EPO)
Patents: 6
Patent Applications: 44
- E33.033 Comprising nitride compound (e.g., AlGaN) (EPO)
Patents: 7
Patent Applications: 24
- E33.034 With heterojunction (e.g., AlGaN/GaN) (EPO)
Patents: 12
Patent Applications: 53
- E33.035 Comprising only Group IV compound (e.g., SiC) (EPO)
Patents: 34
Patent Applications: 13
- E33.036 Characterized by doping material (EPO)
Patents: 8
Patent Applications: 2
- E33.037 Comprising compound other than Group II-VI, III-V, and IV compound (EPO)
Patents: 17
Patent Applications: 20
- E33.038 Comprising only Group IV-VI compound (EPO)
Patents: 3
Patent Applications: 0
- E33.039 Comprising only Group II-IV-VI compound (EPO)
Patents: 0
Patent Applications: 1
- E33.04 Comprising only Group I-III-VI compound (EPO)
Patents: 10
Patent Applications: 1
- E33.041 Characterized by doping material (EPO)
Patents: 4
Patent Applications: 1
- E33.042 Comprising only Group IV-VI or II-IV-VI compound (EPO)
Patents: 0
Patent Applications: 0
- E33.043 Physical imperfections (e.g., particular concentration or distribution of impurity) (EPO)
Patents: 101
Patent Applications: 26
- E33.044 Device characterized by their operation (EPO)
Patents: 34
Patent Applications: 47
- E33.045 Having p-n or hi-lo junction (EPO)
Patents: 93
Patent Applications: 31
- E33.046 P-I-N device (EPO)
Patents: 23
Patent Applications: 5
- E33.047 Having at least two p-n junctions (EPO)
Patents: 35
Patent Applications: 8
- E33.048 Having heterojunction or graded gap (EPO)
Patents: 29
Patent Applications: 38
- E33.049 Comprising only Group III-V compound (EPO)
Patents: 205
Patent Applications: 35
- E33.05 Comprising only Group II-IV compound (EPO)
Patents: 7
Patent Applications: 6
- E33.051 Having Schottky barrier (EPO)
Patents: 17
Patent Applications: 0
- E33.052 Having MIS barrier layer (EPO)
Patents: 22
Patent Applications: 1
- E33.053 Characterized by field-effect operation (EPO)
Patents: 11
Patent Applications: 693
- E33.054 Device being superluminescent diode (EPO)
Patents: 40
Patent Applications: 1
- E33.055 Detail of nonsemiconductor component other than light-emitting semiconductor device (EPO)
Patents: 13
Patent Applications: 286
- E33.056 Packaging (EPO)
Patents: 78
Patent Applications: 701
- E33.057 Adapted for surface mounting (EPO)
Patents: 113
Patent Applications: 92
- E33.058 Housing (EPO)
Patents: 106
Patent Applications: 287
- E33.059 Encapsulation (EPO)
Patents: 174
Patent Applications: 490
- E33.06 Coatings (EPO)
Patents: 109
Patent Applications: 257
- E33.061 Comprising luminescent material (e.g., fluorescent) (EPO)
Patents: 165
Patent Applications: 795
- E33.062 Electrodes (EPO)
Patents: 27
Patent Applications: 363
- E33.063 Characterized by material (EPO)
Patents: 192
Patent Applications: 88
- E33.064 Comprising transparent conductive layers (e.g., transparent conductive oxides (TCO), indium tin oxide (ITO)) (EPO)
Patents: 96
Patent Applications: 255
- E33.065 Characterized by shape (EPO)
Patents: 169
Patent Applications: 55
- E33.066 Electrical contact or lead (e.g., lead frame) (EPO)
Patents: 184
Patent Applications: 692
- E33.067 Means for light extraction or guiding (EPO)
Patents: 180
Patent Applications: 904
- E33.068 Integrated with device (e.g., back surface reflector, lens) (EPO)
Patents: 214
Patent Applications: 407
- E33.069 Comprising resonant cavity structure (e.g., Bragg reflector pair) (EPO)
Patents: 104
Patent Applications: 54
- E33.07 Comprising window layer (EPO)
Patents: 89
Patent Applications: 15
- E33.071 Not integrated with device (EPO)
Patents: 13
Patent Applications: 11
- E33.072 Reflective means (EPO)
Patents: 123
Patent Applications: 317
- E33.073 Refractive means (e.g., lens) (EPO)
Patents: 72
Patent Applications: 127
- E33.074 Scattering means (e.g., surface roughening) (EPO)
Patents: 41
Patent Applications: 169
- E33.075 With means for cooling or heating (EPO)
Patents: 171
Patent Applications: 222
- E33.076 With means for light detecting (e.g., photodetector) (EPO)
Patents: 100
Patent Applications: 89
- E33.077 Monolithic integration with photosensitive device (EPO)
Patents: 3
Patent Applications: 112
- E31.001 SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO)
Patents: 28
Patent Applications: 789
- E31.002 Characterized by semiconductor body (EPO)
Patents: 3
Patent Applications: 106
- E31.003 Characterized by semiconductor body material (EPO)
Patents: 8
Patent Applications: 162
- E31.004 Inorganic materials (EPO)
Patents: 5
Patent Applications: 118
- E31.005 In different semiconductor regions (e.g., Cu 2 X/CdX heterojunction and X being Group VI element) (EPO)
Patents: 2
Patent Applications: 53
- E31.006 Comprising only Cu 2 X/CdX heterojunction and X being Group VI element (EPO)
Patents: 49
Patent Applications: 2
- E31.007 Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe 2 heterojunction) (EPO)
Patents: 62
Patent Applications: 1
- E31.008 Selenium or tellurium (EPO)
Patents: 12
Patent Applications: 64
- E31.009 For device having potential or surface barrier (EPO)
Patents: 5
Patent Applications: 6
- E31.01 Characterized by doping material (EPO)
Patents: 3
Patent Applications: 6
- E31.011 Including, apart from doping material or other impurity, only Group IV element (EPO)
Patents: 11
Patent Applications: 36
- E31.012 For device having potential or surface barrier (EPO)
Patents: 19
Patent Applications: 8
- E31.013 Comprising porous silicon as part of active layer (EPO)
Patents: 2
Patent Applications: 0
- E31.014 Characterized by doping material (EPO)
Patents: 52
Patent Applications: 6
- E31.015 Including, apart from doping material or other impurity, only Group II-VI compound (e.g., CdS, ZnS, HgCdTe) (EPO)
Patents: 7
Patent Applications: 89
- E31.016 For device having potential or surface barrier (EPO)
Patents: 9
Patent Applications: 4
- E31.017 Characterized by doping material (EPO)
Patents: 27
Patent Applications: 2
- E31.018 Including ternary compound (e.g., HgCdTe) (EPO)
Patents: 67
Patent Applications: 10
- E31.019 Including, apart from doping material or other impurity, only Group III-V compound (EPO)
Patents: 7
Patent Applications: 49
- E31.02 For device having potential or surface barrier (EPO)
Patents: 19
Patent Applications: 17
- E31.021 Characterized by doping material GaAlAs, InGaAs, InGaAsP (EPO)
Patents: 47
Patent Applications: 4
- E31.022 Including ternary or quaternary compound (EPO)
Patents: 61
Patent Applications: 17
- E31.023 Including, apart from doping material or other impurity, only Group IV compound (e.g., SiC) (EPO)
Patents: 7
Patent Applications: 27
- E31.024 For device having potential or surface barrier (EPO)
Patents: 9
Patent Applications: 1
- E31.025 Characterized by doping material (EPO)
Patents: 0
Patent Applications: 1
- E31.026 Including, apart from doping material or other impurity, only compound other than Group II-VI, III-V, and IV compound (EPO)
Patents: 57
Patent Applications: 26
- E31.027 Comprising only Group I-III-VI chalcopyrite compound (e.g., CuInSe 2 , CuGaSe 2 , CuInGaSe 2 ) (EPO)
Patents: 74
Patent Applications: 65
- E31.028 Characterized by doping material (EPO)
Patents: 6
Patent Applications: 2
- E31.029 Comprising only Group IV-VI or II-IV-VI chalcogenide compound (e.g., PbSnTe) (EPO)
Patents: 72
Patent Applications: 10
- E31.03 Characterized by doping material (EPO)
Patents: 3
Patent Applications: 0
- E31.031 Characterized by doping material (EPO)
Patents: 1
Patent Applications: 1
- E31.032 Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (EPO)
Patents: 154
Patent Applications: 275
- E31.033 Multiple quantum well structure (EPO)
Patents: 194
Patent Applications: 90
- E31.034 Characterized by amorphous semiconductor layer (EPO)
Patents: 12
Patent Applications: 2
- E31.035 Including, apart from doping material or other impurity, only Group IV element or compound (e.g., Si-SiGe superlattice) (EPO)
Patents: 30
Patent Applications: 5
- E31.036 Doping superlattice (e.g., nipi superlattice) (EPO)
Patents: 7
Patent Applications: 2
- E31.037 For device having potential or surface barrier (EPO)
Patents: 9
Patent Applications: 32
- E31.038 Shape of body (EPO)
Patents: 160
Patent Applications: 21
- E31.039 Shape of potential or surface barrier (EPO)
Patents: 128
Patent Applications: 18
- E31.04 Characterized by semiconductor body crystalline structure or plane (EPO)
Patents: 27
Patent Applications: 46
- E31.041 Including thin film deposited on metallic or insulating substrate (EPO)
Patents: 85
Patent Applications: 12
- E31.042 Including only Group IV element (EPO)
Patents: 241
Patent Applications: 2
- E31.043 Including polycrystalline semiconductor (EPO)
Patents: 25
Patent Applications: 73
- E31.044 Including only Group IV element (EPO)
Patents: 64
Patent Applications: 9
- E31.045 Including microcrystalline silicon ( c-Si) (EPO)
Patents: 19
Patent Applications: 18
- E31.046 Including microcrystalline Group IV compound (e.g., c-SiGe, c-SiC) (EPO)
Patents: 6
Patent Applications: 1
- E31.047 Including amorphous semiconductor (EPO)
Patents: 23
Patent Applications: 94
- E31.048 Including only Group IV element (EPO)
Patents: 65
Patent Applications: 31
- E31.049 Including Group IV compound (e.g., SiGe, SiC) (EPO)
Patents: 37
Patent Applications: 13
- E31.05 Having light-induced characteristic variation (e.g., Staebler-Wronski effect) (EPO)
Patents: 9
Patent Applications: 2
- E31.051 Including other nonmonocrystalline material (e.g., semiconductor particles embedded in insulating material) (EPO)
Patents: 23
Patent Applications: 5
- E31.052 Adapted to control current flow through device (e.g., photoresistor) (EPO)
Patents: 50
Patent Applications: 43
- E31.053 For device having potential or surface barrier (e.g., phototransistor) (EPO)
Patents: 17
Patent Applications: 77
- E31.054 Device sensitive to infrared, visible, or ultraviolet radiation (EPO)
Patents: 78
Patent Applications: 113
- E31.055 Characterized by only one potential or surface barrier (EPO)
Patents: 13
Patent Applications: 60
- E31.056 Potential barrier being of point contact type (EPO)
Patents: 1
Patent Applications: 0
- E31.057 PN homojunction potential barrier (EPO)
Patents: 118
Patent Applications: 57
- E31.058 Device comprising active layer formed only by Group II-VI compound (e.g., HgCdTe IR photodiode) (EPO)
Patents: 77
Patent Applications: 1
- E31.059 Device comprising active layer formed only by Group III-V compound (EPO)
Patents: 59
Patent Applications: 2
- E31.06 Device comprising active layer formed only by Group IV compound (EPO)
Patents: 12
Patent Applications: 3
- E31.061 PIN potential barrier (EPO)
Patents: 153
Patent Applications: 115
- E31.062 Device comprising Group IV amorphous material (EPO)
Patents: 66
Patent Applications: 7
- E31.063 Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO)
Patents: 76
Patent Applications: 49
- E31.064 Heterostructure (e.g., surface absorption or multiplication (SAM) layer) (EPO)
Patents: 112
Patent Applications: 11
- E31.065 Schottky potential barrier (EPO)
Patents: 117
Patent Applications: 14
- E31.066 Metal-semiconductor-metal (MSM) Schottky barrier (EPO)
Patents: 32
Patent Applications: 4
- E31.067 PN heterojunction potential barrier (EPO)
Patents: 101
Patent Applications: 15
- E31.068 Characterized by two potential or surface barriers (EPO)
Patents: 45
Patent Applications: 5
- E31.069 Bipolar phototransistor (EPO)
Patents: 99
Patent Applications: 7
- E31.07 Characterized by at least three potential barriers (EPO)
Patents: 18
Patent Applications: 2
- E31.071 Photothyristor (EPO)
Patents: 105
Patent Applications: 1
- E31.072 Static induction type (i.e., SIT device) (EPO)
Patents: 8
Patent Applications: 0
- E31.073 Field-effect type (e.g., junction field-effect phototransistor) (EPO)
Patents: 13
Patent Applications: 82
- E31.074 With Schottky gate (EPO)
Patents: 3
Patent Applications: 0
- E31.075 Charge-coupled device (CCD) (EPO)
Patents: 3
Patent Applications: 3
- E31.076 Photo MESFET (EPO)
Patents: 22
Patent Applications: 0
- E31.077 With PN homojunction gate (EPO)
Patents: 3
Patent Applications: 3
- E31.078 Charge-coupled device (CCD) (EPO)
Patents: 4
Patent Applications: 5
- E31.079 Field-effect phototransistor (EPO)
Patents: 39
Patent Applications: 69
- E31.08 With PN heterojunction gate (EPO)
Patents: 2
Patent Applications: 1
- E31.081 Charge-coupled device (CCD) (EPO)
Patents: 1
Patent Applications: 0
- E31.082 Field-effect phototransistor (EPO)
Patents: 8
Patent Applications: 3
- E31.083 Conductor-insulator-semiconductor type (EPO)
Patents: 42
Patent Applications: 51
- E31.084 Diode or charge-coupled device (CCD) (EPO)
Patents: 39
Patent Applications: 29
- E31.085 Metal-insulator-semiconductor field-effect transistor (EPO)
Patents: 57
Patent Applications: 58
- E31.086 Device sensitive to very short wavelength (e.g., X-ray, gamma-ray, or corpuscular radiation) (EPO)
Patents: 76
Patent Applications: 24
- E31.087 Bulk-effect radiation detector (e.g., Ge-Li compensated PIN gamma-ray detector) (EPO)
Patents: 12
Patent Applications: 2
- E31.088 Li-compensated PIN gamma-ray detector (EPO)
Patents: 4
Patent Applications: 0
- E31.089 With surface barrier or shallow PN junction (e.g., surface barrier alpha-particle detector) (EPO)
Patents: 13
Patent Applications: 3
- E31.09 With shallow PN junction (EPO)
Patents: 15
Patent Applications: 0
- E31.091 Field-effect type (e.g., MIS-type detector) (EPO)
Patents: 16
Patent Applications: 9
- E31.092 Device being sensitive to very short wavelength (e.g., X-ray, gamma-ray) (EPO)
Patents: 21
Patent Applications: 24
- E31.093 Device sensitive to infrared, visible, or ultraviolet radiation (EPO)
Patents: 180
Patent Applications: 54
- E31.094 Comprising amorphous semiconductor (EPO)
Patents: 132
Patent Applications: 1
- E31.095 Structurally associated with electric light source (e.g., electroluminescent light source) (EPO)
Patents: 72
Patent Applications: 65
- E31.096 Hybrid device containing photosensitive and electroluminescent components within one single body (EPO)
Patents: 72
Patent Applications: 8
- E31.097 Light source controlled by radiation-sensitive semiconductor device (e.g., image converter, image amplifier, image storage device) (EPO)
Patents: 9
Patent Applications: 141
- E31.098 Device without potential or surface barrier (EPO)
Patents: 8
Patent Applications: 1
- E31.099 Light source being semiconductor device with potential or surface barrier (e.g., light-emitting diode) (EPO)
Patents: 15
Patent Applications: 2
- E31.1 Device with potential or surface barrier (EPO)
Patents: 5
Patent Applications: 4
- E31.101 Semiconductor light source and radiation-sensitive semiconductor device both having potential or surface barrier (EPO)
Patents: 8
Patent Applications: 4
- E31.102 Formed in or on common substrate (EPO)
Patents: 36
Patent Applications: 7
- E31.103 Radiation-sensitive semiconductor device controlled by light source (EPO)
Patents: 42
Patent Applications: 11
- E31.104 Radiation-sensitive semiconductor device without potential or surface barrier (e.g., photoresistor) (EPO)
Patents: 6
Patent Applications: 1
- E31.105 Light source being semiconductor device having potential or surface barrier (e.g., light-emitting diode) (EPO)
Patents: 14
Patent Applications: 0
- E31.106 Optical potentiometer (EPO)
Patents: 6
Patent Applications: 0
- E31.107 Radiation-sensitive semiconductor device with potential or surface barrier (EPO)
Patents: 3
Patent Applications: 2
- E31.108 Semiconductor light source and radiation-sensitive semiconductor device both having potential or surface barrier (EPO)
Patents: 153
Patent Applications: 7
- E31.109 Formed in or on common substrate (EPO)
Patents: 66
Patent Applications: 7
- E31.11 Detail of nonsemiconductor component of radiation-sensitive semiconductor device (EPO)
Patents: 8
Patent Applications: 455
- E31.111 Input/output circuit of device (EPO)
Patents: 26
Patent Applications: 29
- E31.112 For device having potential or surface barrier (EPO)
Patents: 39
Patent Applications: 3
- E31.113 Circuit arrangement of general character for device (EPO)
Patents: 11
Patent Applications: 130
- E31.114 For device having potential or surface barrier (EPO)
Patents: 24
Patent Applications: 13
- E31.115 Position-sensitive and lateral-effect photodetector (e.g., quadrant photodiode) (EPO)
Patents: 75
Patent Applications: 3
- E31.116 Device working in avalanche mode (EPO)
Patents: 19
Patent Applications: 4
- E31.117 Encapsulation (EPO)
Patents: 181
Patent Applications: 204
- E31.118 For device having potential or surface barrier (EPO)
Patents: 197
Patent Applications: 11
- E31.119 Coatings (EPO)
Patents: 55
Patent Applications: 254
- E31.12 For device having potential or surface barrier (EPO)
Patents: 145
Patent Applications: 46
- E31.121 For filtering or shielding light (e.g., multicolor filter for photodetector) (EPO)
Patents: 189
Patent Applications: 67
- E31.122 For shielding light (e.g., light-blocking layer, cold shield for infrared detector) (EPO)
Patents: 163
Patent Applications: 55
- E31.123 For interference filter (e.g., multilayer dielectric filter) (EPO)
Patents: 31
Patent Applications: 5
- E31.124 Electrode (EPO)
Patents: 73
Patent Applications: 417
- E31.125 For device having potential or surface barrier (EPO)
Patents: 109
Patent Applications: 35
- E31.126 Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO)
Patents: 201
Patent Applications: 164
- E31.127 Optical element associated with device (EPO)
Patents: 187
Patent Applications: 1181
- E31.128 Device having potential or surface barrier (EPO)
Patents: 288
Patent Applications: 80
- E31.129 Comprising luminescent member (e.g., fluorescent sheet) (EPO)
Patents: 65
Patent Applications: 24
- E31.13 Texturized surface (EPO)
Patents: 194
Patent Applications: 144
- E31.131 Arrangement for temperature regulation (e.g., cooling, heating, or ventilating) (EPO)
Patents: 97
Patent Applications: 20
- E27.001 DEVICE CONSISTING OF A PLURALITY OF SEMICONDUCTOR OR OTHER SOLID STATE COMPONENTS FORMED IN OR ON A COMMON SUBSTRATE, E.G., INTEGRATED CIRCUIT DEVICE (EPO)
Patents: 33
Patent Applications: 141
- E27.002 Including bulk negative resistance effect component (EPO)
Patents: 6
Patent Applications: 9
- E27.003 Including Gunn-effect device (EPO)
Patents: 3
Patent Applications: 0
- E27.004 Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO)
Patents: 115
Patent Applications: 50
- E27.005 Including component using galvano-magnetic effects, e.g. Hall effect (EPO)
Patents: 107
Patent Applications: 11
- E27.006 Including piezo-electric, electro-resistive, or magneto-resistive component (EPO)
Patents: 120
Patent Applications: 25
- E27.007 Including superconducting component (EPO)
Patents: 41
Patent Applications: 3
- E27.008 Including thermo-electric or thermo-magnetic component with or without a junction of dissimilar material or thermo-magnetic component (EPO)
Patents: 61
Patent Applications: 4
- E27.009 Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO)
Patents: 59
Patent Applications: 77
- E27.01 With semiconductor substrate only (EPO)
Patents: 31
Patent Applications: 65
- E27.011 Including a plurality of components in a non-repetitive configuration (EPO)
Patents: 27
Patent Applications: 60
- E27.012 Made of compound semiconductor material, e.g. III-V material (EPO)
Patents: 331
Patent Applications: 4
- E27.013 Integrated circuit having a two-dimensional layout of components without a common active region (EPO)
Patents: 19
Patent Applications: 34
- E27.014 Including a field-effect type component (EPO)
Patents: 36
Patent Applications: 73
- E27.015 In combination with bipolar transistor (EPO)
Patents: 517
Patent Applications: 98
- E27.016 In combination with diode, resistor, or capacitor (EPO)
Patents: 411
Patent Applications: 394
- E27.017 In combination with bipolar transistor and diode, resistor, or capacitor (EPO)
Patents: 91
Patent Applications: 22
- E27.018 With component other than field-effect type (EPO)
Patents: 14
Patent Applications: 12
- E27.019 Bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 22
Patent Applications: 31
- E27.02 Vertical bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 28
Patent Applications: 1
- E27.021 Vertical bipolar transistor in combination with resistor or capacitor only (EPO)
Patents: 44
Patent Applications: 2
- E27.022 Vertical bipolar transistor in combination with diode only (EPO)
Patents: 33
Patent Applications: 4
- E27.023 Lateral bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 4
Patent Applications: 3
- E27.024 Including combination of diode, capacitor, or resistor (EPO)
Patents: 29
Patent Applications: 29
- E27.025 Including combination of capacitor or resistor only (EPO)
Patents: 18
Patent Applications: 22
- E27.026 Integrated circuit having a three-dimensional layout (EPO)
Patents: 551
Patent Applications: 27
- E27.027 Including components formed on opposite sides of a semiconductor substrate (EPO)
Patents: 0
Patent Applications: 7
- E27.028 Including component having an active region in common (EPO)
Patents: 7
Patent Applications: 1
- E27.029 Including component of the field-effect type (EPO)
Patents: 42
Patent Applications: 10
- E27.03 In combination with bipolar transistor and diode, capacitor, or resistor (EPO)
Patents: 15
Patent Applications: 4
- E27.031 In combination with vertical bipolar transistor and diode, capacitor, or resistor (EPO)
Patents: 114
Patent Applications: 2
- E27.032 In combination with lateral bipolar transistor and diode, capacitor, or resistor (EPO)
Patents: 43
Patent Applications: 2
- E27.033 In combination with diode, capacitor, or resistor (EPO)
Patents: 90
Patent Applications: 9
- E27.034 In combination with capacitor only (EPO)
Patents: 32
Patent Applications: 8
- E27.035 In combination with resistor only (EPO)
Patents: 25
Patent Applications: 4
- E27.036 With component other than field-effect type (EPO)
Patents: 8
Patent Applications: 0
- E27.037 Bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 16
Patent Applications: 1
- E27.038 Vertical bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 37
Patent Applications: 0
- E27.039 Vertical bipolar transistor in combination with diode only (EPO)
Patents: 36
Patent Applications: 0
- E27.04 With Schottky diode only (EPO)
Patents: 47
Patent Applications: 1
- E27.041 Vertical bipolar transistor in combination with resistor only (EPO)
Patents: 41
Patent Applications: 0
- E27.042 Vertical bipolar transistor in combination with capacitor only (EPO)
Patents: 12
Patent Applications: 0
- E27.043 Lateral bipolar transistor in combination with diode, capacitor, or resistor (EPO)
Patents: 5
Patent Applications: 0
- E27.044 Including combination of diode, capacitor, or resistor (EPO)
Patents: 13
Patent Applications: 1
- E27.045 Combination of capacitor and resistor (EPO)
Patents: 11
Patent Applications: 4
- E27.046 Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all CMOS (EPO)
Patents: 217
Patent Applications: 67
- E27.047 Resistor only (EPO)
Patents: 210
Patent Applications: 20
- E27.048 Capacitor only (EPO)
Patents: 273
Patent Applications: 60
- E27.049 Varactor diode (EPO)
Patents: 22
Patent Applications: 5
- E27.05 Metal-insulated-semiconductor (MIS) diode (EPO)
Patents: 18
Patent Applications: 3
- E27.051 Diode only (EPO)
Patents: 109
Patent Applications: 13
- E27.052 Thyristor only (EPO)
Patents: 40
Patent Applications: 2
- E27.053 Bipolar component only (EPO)
Patents: 49
Patent Applications: 37
- E27.054 Combination of lateral and vertical transistors only (EPO)
Patents: 94
Patent Applications: 2
- E27.055 Vertical bipolar transistor only (EPO)
Patents: 34
Patent Applications: 6
- E27.056 Vertical direct transistor of the same conductivity type having different characteristics, (e.g. Darlington transistor) (EPO)
Patents: 87
Patent Applications: 0
- E27.057 Vertical complementary transistor (EPO)
Patents: 91
Patent Applications: 1
- E27.058 Combination of direct and inverse vertical transistors (e.g., collector acts as emitter) (EPO)
Patents: 16
Patent Applications: 0
- E27.059 Including field-effect component only (EPO)
Patents: 48
Patent Applications: 38
- E27.06 Field-effect transistor with insulated gate (EPO)
Patents: 496
Patent Applications: 840
- E27.061 Combination of depletion and enhancement field-effect transistors (EPO)
Patents: 74
Patent Applications: 59
- E27.062 Complementary MIS (EPO)
Patents: 422
Patent Applications: 769
- E27.063 Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (EPO)
Patents: 220
Patent Applications: 15
- E27.064 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS (EPO)
Patents: 327
Patent Applications: 39
- E27.065 Including an N-well only in the substrate (EPO)
Patents: 53
Patent Applications: 2
- E27.066 Including a P-well only in the substrate (EPO)
Patents: 66
Patent Applications: 2
- E27.067 Including both N- and P- wells in the substrate, e.g. twin-tub (EPO)
Patents: 258
Patent Applications: 49
- E27.068 Schottky barrier gate field-effect transistor (EPO)
Patents: 71
Patent Applications: 10
- E27.069 PN junction gate field-effect transistor
Patents: 33
Patent Applications: 7
- E27.07 Including a plurality of individual components in a repetitive configuration (EPO)
Patents: 43
Patent Applications: 117
- E27.071 Including resistor or capacitor only (EPO)
Patents: 57
Patent Applications: 37
- E27.072 Including bipolar component (EPO)
Patents: 1
Patent Applications: 3
- E27.073 Including diode only (EPO)
Patents: 101
Patent Applications: 4
- E27.074 Including bipolar transistor (EPO)
Patents: 12
Patent Applications: 5
- E27.075 Bipolar dynamic random access memory structure (EPO)
Patents: 23
Patent Applications: 2
- E27.076 Array of single bipolar transistors only, e.g. read only memory structure (EPO)
Patents: 14
Patent Applications: 1
- E27.077 Static bipolar memory cell structure (EPO)
Patents: 84
Patent Applications: 2
- E27.078 Bipolar electrically programmable memory structure (EPO)
Patents: 42
Patent Applications: 3
- E27.079 Thyristor (EPO)
Patents: 16
Patent Applications: 5
- E27.08 Unijunction transistor, i.e., three terminal device with only one p-n junction having a negative resistance region in the I-V characteristic (EPO)
Patents: 3
Patent Applications: 0
- E27.081 Including field-effect component (EPO)
Patents: 739
Patent Applications: 181
- E27.082 Including bucket brigade type charge coupled device (C.C.D) (EPO)
Patents: 20
Patent Applications: 0
- E27.083 Including charge coupled device (C.C.D) or charge injection device (C.I.D) (EPO)
Patents: 118
Patent Applications: 4
- E27.084 Dynamic random access memory, DRAM, structure (EPO)
Patents: 422
Patent Applications: 434
- E27.085 One-transistor memory cell structure, i.e., each memory cell containing only one transistor (EPO)
Patents: 494
Patent Applications: 19
- E27.086 Storage electrode stacked over the transistor
Patents: 501
Patent Applications: 47
- E27.087 With bit line higher than capacitor (EPO)
Patents: 35
Patent Applications: 1
- E27.088 With capacitor higher than bit line level (EPO)
Patents: 47
Patent Applications: 9
- E27.089 Storage electrode having multiple wings (EPO)
Patents: 621
Patent Applications: 4
- E27.09 Capacitor extending under the transistor (EPO)
Patents: 50
Patent Applications: 1
- E27.091 Transistor in trench (EPO)
Patents: 142
Patent Applications: 10
- E27.092 Capacitor in trench (EPO)
Patents: 314
Patent Applications: 47
- E27.093 Capacitor extending under or around the transistor (EPO)
Patents: 75
Patent Applications: 3
- E27.094 Having storage electrode extension stacked over the transistor (EPO)
Patents: 64
Patent Applications: 6
- E27.095 Capacitor and transistor in common trench (EPO)
Patents: 10
Patent Applications: 5
- E27.096 Vertical transistor (EPO)
Patents: 197
Patent Applications: 7
- E27.097 Peripheral structure (EPO)
Patents: 237
Patent Applications: 9
- E27.098 Static random access memory, SRAM, structure (EPO)
Patents: 315
Patent Applications: 86
- E27.099 Load element being a MOSFET transistor (EPO)
Patents: 373
Patent Applications: 32
- E27.1 Load element being a thin film transistor (EPO)
Patents: 334
Patent Applications: 1
- E27.101 Load element being a resistor (EPO)
Patents: 378
Patent Applications: 7
- E27.102 Read-only memory, ROM, structure (EPO)
Patents: 528
Patent Applications: 48
- E27.103 Electrically programmable ROM (EPO)
Patents: 1940
Patent Applications: 197
- E27.104 Ferroelectric non-volatile memory structure (EPO)
Patents: 519
Patent Applications: 82
- E27.105 Masterslice integrated circuit (EPO)
Patents: 182
Patent Applications: 13
- E27.106 Using bipolar structure (EPO)
Patents: 45
Patent Applications: 1
- E27.107 Using field-effect structure (EPO)
Patents: 83
Patent Applications: 2
- E27.108 CMOS gate array (EPO)
Patents: 306
Patent Applications: 28
- E27.109 Using combined field-effect/bipolar structure (EPO)
Patents: 35
Patent Applications: 2
- E27.11 Input and output buffer/driver (EPO)
Patents: 116
Patent Applications: 6
- E27.111 Substrate comprising other than a semiconductor material, e.g. insulating substrate or layered substrate Including a non-semiconductor layer (EPO)
Patents: 1055
Patent Applications: 180
- E27.112 Including insulator on semiconductor, e.g. SOI (silicon on insulator) (EPO)
Patents: 916
Patent Applications: 534
- E27.113 Combined with thin-film or thick-film passive component (EPO)
Patents: 29
Patent Applications: 15
- E27.114 Including only passive thin-film or thick-film elements on a common insulating substrate (EPO)
Patents: 38
Patent Applications: 26
- E27.115 Thick-film circuits (EPO)
Patents: 41
Patent Applications: 0
- E27.116 Thin-film circuits (EPO)
Patents: 73
Patent Applications: 9
- E27.117 Including organic material in active region
Patents: 12
Patent Applications: 9
- E27.118 Including semiconductor components sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO)
Patents: 1
Patent Applications: 2
- E27.119 Including semiconductor components with at least one potential barrier, surface barrier, or recombination zone adapted for light emission (EPO)
Patents: 4
Patent Applications: 52
- E27.12 Including semiconductor component with at least one potential barrier or surface barrier adapted for light emission structurally associated with controlling devices having a variable impedance and not being light sensitive (EPO)
Patents: 179
Patent Applications: 127
- E27.121 In a repetitive configuration (EPO)
Patents: 150
Patent Applications: 74
- E27.122 Including active semiconductor component sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO)
Patents: 22
Patent Applications: 45
- E27.123 Energy conversion device (EPO)
Patents: 54
Patent Applications: 15
- E27.124 In a repetitive configuration, e.g. planar multi-junction solar cells (EPO)
Patents: 60
Patent Applications: 16
- E27.125 Including only thin film solar cells deposited on a substrate (EPO)
Patents: 222
Patent Applications: 8
- E27.126 Including multiple vertical junction or V-groove junction solar cells formed in a semiconductor substrate (EPO)
Patents: 25
Patent Applications: 2
- E27.127 Device controlled by radiation (EPO)
Patents: 33
Patent Applications: 12
- E27.128 With at least one potential barrier or surface barrier (EPO)
Patents: 269
Patent Applications: 5
- E27.129 In a repetitive configuration (EPO)
Patents: 136
Patent Applications: 8
- E27.13 Imager Including structural or functional details of the device (EPO)
Patents: 128
Patent Applications: 121
- E27.131 Geometry or disposition of pixel-elements, address-lines, or gate-electrodes (EPO)
Patents: 140
Patent Applications: 54
- E27.132 Pixel-elements with integrated switching, control, storage, or amplification elements (EPO)
Patents: 242
Patent Applications: 57
- E27.133 Photodiode array or MOS imager (EPO)
Patents: 575
Patent Applications: 391
- E27.134 Color imager (EPO)
Patents: 77
Patent Applications: 34
- E27.135 Multicolor imager having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements (EPO)
Patents: 23
Patent Applications: 5
- E27.136 Infrared imager (EPO)
Patents: 109
Patent Applications: 2
- E27.137 Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO)
Patents: 112
Patent Applications: 2
- E27.138 Multispectral infrared imager having a stacked pixel-element structure, e.g., npn, npnpn or MQW structures (EPO)
Patents: 15
Patent Applications: 1
- E27.139 Anti-blooming (EPO)
Patents: 43
Patent Applications: 3
- E27.14 X-ray, gamma-ray, or high energy radiation imager (measuring X-, gamma- or corpuscular radiation) (EPO)
Patents: 46
Patent Applications: 4
- E27.141 Imager using a photoconductor layer (e.g., single photoconductor layer for all pixels) (EPO)
Patents: 239
Patent Applications: 8
- E27.142 Color imager (EPO)
Patents: 20
Patent Applications: 2
- E27.143 Infrared imager (EPO)
Patents: 50
Patent Applications: 0
- E27.144 Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO)
Patents: 29
Patent Applications: 0
- E27.145 Anti-blooming (EPO)
Patents: 16
Patent Applications: 0
- E27.146 X-ray, gamma-ray, or high energy radiation imagers (EPO)
Patents: 38
Patent Applications: 3
- E27.147 Contact-type imager (e.g., contacts document surface) (EPO)
Patents: 25
Patent Applications: 1
- E27.148 Junction field effect transistor (JFET) imager or static induction transistor (SIT) imager (EPO)
Patents: 70
Patent Applications: 4
- E27.149 Bipolar transistor imager (EPO)
Patents: 103
Patent Applications: 1
- E27.15 Charge coupled imager (EPO)
Patents: 113
Patent Applications: 100
- E27.151 Structural or functional details (EPO)
Patents: 71
Patent Applications: 24
- E27.152 Geometry or disposition of pixel-elements, address lines or gate-electrodes (EPO)
Patents: 76
Patent Applications: 3
- E27.153 Linear CCD imager (EPO)
Patents: 88
Patent Applications: 3
- E27.154 Area CCD imager (EPO)
Patents: 474
Patent Applications: 4
- E27.155 Frame-interline transfer (EPO)
Patents: 2
Patent Applications: 1
- E27.156 Interline transfer (EPO)
Patents: 20
Patent Applications: 2
- E27.157 Frame transfer (EPO)
Patents: 19
Patent Applications: 0
- E27.158 Charge injection device (CID) imager (EPO)
Patents: 33
Patent Applications: 0
- E27.159 CCD or CID color imager (EPO)
Patents: 78
Patent Applications: 1
- E27.16 Infrared CCD or CID imager (EPO)
Patents: 91
Patent Applications: 0
- E27.161 Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO)
Patents: 102
Patent Applications: 0
- E27.162 Anti-blooming (EPO)
Patents: 181
Patent Applications: 7
- E27.163 Including a photoconductive layer deposited on the CCD structure (EPO)
Patents: 9
Patent Applications: 1
- E29.001 SEMICONDUCTORS DEVICES ADAPTED FOR RECTIFYING, AMPLIFYING, OSCILLATING, OR SWITCHING, CAPACITORS, OR RESISTORS WITH AT LEAST ONE POTENTIAL-JUMP BARRIER OR SURFACE BARRIER (EPO)
Patents: 12
Patent Applications: 720
- E29.002 Electrical characteristics due to properties of entire semiconductor body rather than just surface region (EPO)
Patents: 8
Patent Applications: 267
- E29.003 Characterized by their crystalline structure (e.g., polycrystalline, cubic) particular orientation of crystalline planes (EPO)
Patents: 191
Patent Applications: 622
- E29.004 With specified crystalline planes or axis (EPO)
Patents: 173
Patent Applications: 166
- E29.005 Characterized by specified shape or size of PN junction or by specified impurity concentration gradient within the device (EPO)
Patents: 18
Patent Applications: 298
- E29.006 Characterized by particular design considerations to control electrical field effect within device (EPO)
Patents: 10
Patent Applications: 80
- E29.007 For controlling surface leakage or electric field concentration (EPO)
Patents: 13
Patent Applications: 48
- E29.008 For controlling breakdown voltage of reverse biased devices (EPO)
Patents: 14
Patent Applications: 11
- E29.009 With field relief electrode (field plate) (EPO)
Patents: 165
Patent Applications: 8
- E29.01 With at least two field relief electrodes used in combination and not electrically interconnected (EPO)
Patents: 124
Patent Applications: 6
- E29.011 With one or more field relief electrode comprising resistance material (e.g., semi insulating material, lightly doped poly-silicon) (EPO)
Patents: 63
Patent Applications: 0
- E29.012 By doping profile or shape or arrangement of the PN junction, or with supplementary regions (e.g., guard ring, LDD, drift region) (EPO)
Patents: 146
Patent Applications: 33
- E29.013 With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO)
Patents: 242
Patent Applications: 7
- E29.014 With breakdown supporting region for localizing breakdown or limiting its voltage (EPO)
Patents: 33
Patent Applications: 11
- E29.015 With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (EPO)
Patents: 79
Patent Applications: 5
- E29.016 For preventing surface leakage due to surface inversion layer (e.g., channel stop) (EPO)
Patents: 147
Patent Applications: 4
- E29.017 With field relief electrodes acting on insulator potential or insulator charges (EPO)
Patents: 67
Patent Applications: 3
- E29.018 Comprising internal isolation within devices or components (EPO)
Patents: 30
Patent Applications: 72
- E29.019 Isolation by PN junctions (EPO)
Patents: 27
Patent Applications: 22
- E29.02 Isolation by dielectric regions (EPO)
Patents: 180
Patent Applications: 281
- E29.021 For source or drain region of field-effect device (EPO)
Patents: 188
Patent Applications: 9
- E29.022 Characterized by shape of semiconductor body (EPO)
Patents: 210
Patent Applications: 84
- E29.023 Adapted for altering junction breakdown voltage by shape of semiconductor body (EPO)
Patents: 83
Patent Applications: 1
- E29.024 Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (EPO)
Patents: 30
Patent Applications: 80
- E29.025 Characterized by particular shape of junction between semiconductor regions (EPO)
Patents: 29
Patent Applications: 10
- E29.026 Surface layout of device (EPO)
Patents: 185
Patent Applications: 13
- E29.027 Surface layout of MOS gated device (e.g., DMOSFET or IGBT) (EPO)
Patents: 238
Patent Applications: 33
- E29.028 With a nonplanar gate structure (EPO)
Patents: 73
Patent Applications: 6
- E29.029 With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)
Patents: 6
Patent Applications: 28
- E29.03 Emitter regions of bipolar transistors (EPO)
Patents: 179
Patent Applications: 1
- E29.031 Of lateral transistors (EPO)
Patents: 15
Patent Applications: 0
- E29.032 Noninterconnected multiemitter structures (EPO)
Patents: 37
Patent Applications: 0
- E29.033 Of heterojunction bipolar transistors (EPO)
Patents: 48
Patent Applications: 7
- E29.034 Collector regions of bipolar transistors (EPO)
Patents: 200
Patent Applications: 2
- E29.035 Pedestal collectors (EPO)
Patents: 27
Patent Applications: 0
- E29.036 Anode or cathode regions of thyristors or gated bipolar-mode devices (EPO)
Patents: 8
Patent Applications: 0
- E29.037 Anode regions of thyristors or gated bipolar-mode devices (EPO)
Patents: 157
Patent Applications: 0
- E29.038 Cathode regions of thyristors (EPO)
Patents: 65
Patent Applications: 0
- E29.039 Source or drain regions of field-effect devices (EPO)
Patents: 43
Patent Applications: 1
- E29.04 Of field-effect transistors with insulated gate (EPO)
Patents: 546
Patent Applications: 20
- E29.041 Of field-effect transistors with Schottky gate (EPO)
Patents: 103
Patent Applications: 2
- E29.042 Tunneling barrier (EPO)
Patents: 42
Patent Applications: 7
- E29.043 With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)
Patents: 21
Patent Applications: 28
- E29.044 Base region of bipolar transistors (EPO)
Patents: 299
Patent Applications: 2
- E29.045 Of lateral transistors (EPO)
Patents: 31
Patent Applications: 0
- E29.046 Base regions of thyristors (EPO)
Patents: 12
Patent Applications: 0
- E29.047 Anode base regions of thyristors (EPO)
Patents: 34
Patent Applications: 0
- E29.048 Cathode base regions of thyristors (EPO)
Patents: 81
Patent Applications: 0
- E29.049 Channel region of field-effect devices (EPO)
Patents: 16
Patent Applications: 1
- E29.05 Of field-effect transistors (EPO)
Patents: 175
Patent Applications: 3
- E29.051 With insulated gate (EPO)
Patents: 159
Patent Applications: 2
- E29.052 Nonplanar channel (EPO)
Patents: 42
Patent Applications: 1
- E29.053 With nonuniform doping structure in channel region surface (EPO)
Patents: 37
Patent Applications: 1
- E29.054 Doping structure being parallel to channel length (EPO)
Patents: 219
Patent Applications: 0
- E29.055 With vertical doping variation (EPO)
Patents: 94
Patent Applications: 0
- E29.056 With variation of composition of channel (EPO)
Patents: 80
Patent Applications: 2
- E29.057 With PN junction gate
Patents: 29
Patent Applications: 1
- E29.058 Of charge coupled devices (EPO)
Patents: 113
Patent Applications: 0
- E29.059 Gate region of field-effect devices with PN junction gate (EPO)
Patents: 99
Patent Applications: 0
- E29.06 Substrate region of field-effect devices (EPO)
Patents: 9
Patent Applications: 3
- E29.061 Of field-effect transistors (EPO)
Patents: 91
Patent Applications: 2
- E29.062 With insulated gate (EPO)
Patents: 83
Patent Applications: 4
- E29.063 With inactive supplementary region (e.g., for preventing punch-through, improving capacity effect or leakage current) (EPO)
Patents: 337
Patent Applications: 3
- E29.064 Characterized by contact structure of substrate region (EPO)
Patents: 163
Patent Applications: 0
- E29.065 Of charge coupled devices (EPO)
Patents: 14
Patent Applications: 0
- E29.066 Body region structure of IGFET's with channel containing layer (DMOSFET or IGBT) (EPO)
Patents: 310
Patent Applications: 12
- E29.067 With nonplanar gate structure (EPO)
Patents: 84
Patent Applications: 0
- E29.068 Characterized by materials of semiconductor body (EPO)
Patents: 7
Patent Applications: 511
- E29.069 Single quantum well structures (EPO)
Patents: 18
Patent Applications: 55
- E29.07 Quantum wire structures (EPO)
Patents: 60
Patent Applications: 51
- E29.071 Quantum box or quantum dot structures (EPO)
Patents: 85
Patent Applications: 28
- E29.072 Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (EPO)
Patents: 16
Patent Applications: 95
- E29.073 Doping structures (e.g., doping superlattices, nipi-superlattices) (EPO)
Patents: 18
Patent Applications: 7
- E29.074 Structures without potential periodicity in direction perpendicular to major surface of substrate (e.g., lateral superlattice) (EPO)
Patents: 27
Patent Applications: 1
- E29.075 Compositional structures (EPO)
Patents: 18
Patent Applications: 6
- E29.076 With layered structures with quantum effects in vertical direction (EPO)
Patents: 14
Patent Applications: 7
- E29.077 Comprising at least one long-range structurally disordered material (e.g., one-dimensional vertical amorphous superlattices) (EPO)
Patents: 12
Patent Applications: 2
- E29.078 Comprising only semiconductor materials (EPO)
Patents: 144
Patent Applications: 12
- E29.079 Two or more elements from two or more groups of Periodic Table of elements (e.g., alloys) (EPO)
Patents: 17
Patent Applications: 28
- E29.08 Amorphous materials (EPO)
Patents: 8
Patent Applications: 13
- E29.081 In different semiconductor regions (e.g., heterojunctions) (EPO)
Patents: 136
Patent Applications: 56
- E29.082 Only element from fourth group of Periodic System in uncombined form (EPO)
Patents: 112
Patent Applications: 71
- E29.083 Amorphous materials (EPO)
Patents: 36
Patent Applications: 5
- E29.084 Including two or more of elements from fourth group of Periodic System (EPO)
Patents: 51
Patent Applications: 79
- E29.085 In different semiconductor regions (e.g., heterojunctions) (EPO)
Patents: 62
Patent Applications: 31
- E29.086 Further characterized by doping material (EPO)
Patents: 174
Patent Applications: 10
- E29.087 Selenium or tellurium only (EPO)
Patents: 3
Patent Applications: 19
- E29.088 Amorphous materials (EPO)
Patents: 1
Patent Applications: 5
- E29.089 Only Group III-V compounds (EPO)
Patents: 40
Patent Applications: 501
- E29.09 Including two or more compounds (e.g., alloys) (EPO)
Patents: 47
Patent Applications: 12
- E29.091 In different semiconductor regions (e.g., heterojunctions) (EPO)
Patents: 192
Patent Applications: 149
- E29.092 Amorphous materials (EPO)
Patents: 3
Patent Applications: 2
- E29.093 Further characterized by doping material (EPO)
Patents: 64
Patent Applications: 18
- E29.094 Only Group II-VI compounds (EPO)
Patents: 17
Patent Applications: 121
- E29.095 Amorphous materials (EPO)
Patents: 0
Patent Applications: 25
- E29.096 Including two or more compounds (e.g., alloys) (EPO)
Patents: 27
Patent Applications: 6
- E29.097 In different semiconductor regions (e.g., heterojunctions) (EPO)
Patents: 17
Patent Applications: 3
- E29.098 Further characterized by doping material (EPO)
Patents: 13
Patent Applications: 6
- E29.099 CdX compounds being one element of sixth group of Periodic System (EPO)
Patents: 7
Patent Applications: 3
- E29.1 Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO)
Patents: 39
Patent Applications: 49
- E29.101 Amorphous materials (EPO)
Patents: 7
Patent Applications: 23
- E29.102 Group I-VI or I-VII compounds (e.g., Cu 2 O, CuI) (EPO)
Patents: 2
Patent Applications: 4
- E29.103 Pb compounds (e.g., PbO) (EPO)
Patents: 12
Patent Applications: 0
- E29.104 Si compounds (e.g., SiC) (EPO)
Patents: 236
Patent Applications: 298
- E29.105 Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (EPO)
Patents: 11
Patent Applications: 18
- E29.106 Characterized by physical imperfections; having polished or roughened surface (EPO)
Patents: 1
Patent Applications: 40
- E29.107 Imperfections within semiconductor body (EPO)
Patents: 126
Patent Applications: 24
- E29.108 Imperfections on surface of semiconductor body (EPO)
Patents: 18
Patent Applications: 10
- E29.109 Characterized by concentration or distribution of impurities in bulk material (EPO)
Patents: 122
Patent Applications: 67
- E29.11 Planar doping (e.g., atomic-plane doping, delta-doping) (EPO)
Patents: 41
Patent Applications: 0
- E29.111 Electrodes (EPO)
Patents: 15
Patent Applications: 86
- E29.112 Characterized by their shape, relative sizes or dispositions (EPO)
Patents: 63
Patent Applications: 44
- E29.113 Carrying current to be rectified, amplified or switched (EPO)
Patents: 37
Patent Applications: 10
- E29.114 Emitter or collector electrodes for bipolar transistors (EPO)
Patents: 152
Patent Applications: 4
- E29.115 Cathode or anode electrodes for thyristors (EPO)
Patents: 59
Patent Applications: 0
- E29.116 Source or drain electrodes for field-effect devices (EPO)
Patents: 121
Patent Applications: 15
- E29.117 For thin film transistors with insulated gate (EPO)
Patents: 206
Patent Applications: 47
- E29.118 For vertical current flow (EPO)
Patents: 108
Patent Applications: 2
- E29.119 For lateral devices where connection to source or drain region is done through at least one part of semiconductor substrate thickness (e.g., with connecting sink or with via-hole) (EPO)
Patents: 65
Patent Applications: 2
- E29.12 Layout configuration for lateral device source or drain region (e.g., cellular, interdigitated or ring structure or being curved or angular) (EPO)
Patents: 84
Patent Applications: 1
- E29.121 Source or drain electrode in groove (EPO)
Patents: 90
Patent Applications: 1
- E29.122 Characterized by relative position of source or drain electrode and gate electrode (EPO)
Patents: 231
Patent Applications: 4
- E29.123 Not carrying current to be rectified, amplified, or switched (EPO)
Patents: 7
Patent Applications: 8
- E29.124 Base electrodes for bipolar transistors (EPO)
Patents: 127
Patent Applications: 1
- E29.125 Gate electrodes for thyristors (EPO)
Patents: 53
Patent Applications: 0
- E29.126 Gate stack for field-effect devices (EPO)
Patents: 34
Patent Applications: 8
- E29.127 For field-effect transistors (EPO)
Patents: 232
Patent Applications: 14
- E29.128 With insulated gate (EPO)
Patents: 60
Patent Applications: 47
- E29.129 Gate electrodes for transistors with floating gate (EPO)
Patents: 652
Patent Applications: 76
- E29.13 Gate electrodes for nonplanar MOSFET (EPO)
Patents: 208
Patent Applications: 3
- E29.131 Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (EPO)
Patents: 145
Patent Applications: 2
- E29.132 Characterized by insulating layer (EPO)
Patents: 53
Patent Applications: 28
- E29.133 Nonuniform insulating layer thickness (EPO)
Patents: 193
Patent Applications: 2
- E29.134 Characterized by configuration of gate electrode layer (EPO)
Patents: 41
Patent Applications: 4
- E29.135 Characterized by length or sectional shape (EPO)
Patents: 285
Patent Applications: 6
- E29.136 Characterized by surface lay-out (EPO)
Patents: 175
Patent Applications: 4
- E29.137 Characterized by configuration of gate stack of thin film FETs (EPO)
Patents: 233
Patent Applications: 9
- E29.138 For charge coupled devices (EPO)
Patents: 120
Patent Applications: 0
- E29.139 Of specified material (EPO)
Patents: 23
Patent Applications: 43
- E29.14 For gate of heterojunction field-effect devices (EPO)
Patents: 57
Patent Applications: 4
- E29.141 Resistive materials for field-effect devices (EPO)
Patents: 54
Patent Applications: 4
- E29.142 Superconductor materials (EPO)
Patents: 10
Patent Applications: 1
- E29.143 Ohmic electrodes (EPO)
Patents: 100
Patent Applications: 19
- E29.144 On Group III-V material (EPO)
Patents: 217
Patent Applications: 8
- E29.145 On thin-film Group III-V material (EPO)
Patents: 2
Patent Applications: 1
- E29.146 On silicon (EPO)
Patents: 382
Patent Applications: 3
- E29.147 For thin-film silicon (EPO)
Patents: 239
Patent Applications: 5
- E29.148 Schottky barrier electrodes (EPO)
Patents: 137
Patent Applications: 33
- E29.149 On Group III-V material (EPO)
Patents: 138
Patent Applications: 6
- E29.15 Electrodes for IGFET (EPO)
Patents: 21
Patent Applications: 11
- E29.151 For TFT (EPO)
Patents: 475
Patent Applications: 34
- E29.152 With lateral structure (e.g., poly-silicon gate with lateral doping variation or with lateral composition variation or characterized by sidewalls being composed of conductive, resistivity) (EPO)
Patents: 279
Patent Applications: 1
- E29.154 Silicon gate conductor material (EPO)
Patents: 134
Patent Applications: 9
- E29.155 Multiple silicon layers
Patents: 134
Patent Applications: 5
- E29.156 Including silicide layer contacting silicon layer (EPO)
Patents: 222
Patent Applications: 18
- E29.157 Including barrier layer between silicon and non-Si electrode
Patents: 152
Patent Applications: 2
- E29.158 Elemental metal gate conductor material (e.g., W, Mo) (EPO)
Patents: 86
Patent Applications: 8
- E29.159 Diverse conductors (EPO)
Patents: 16
Patent Applications: 1
- E29.16 Gate conductor material being compound or alloy material (e.g., organic material, TiN, MoSi 2 ) (EPO)
Patents: 130
Patent Applications: 10
- E29.161 Silicide (EPO)
Patents: 76
Patent Applications: 15
- E29.162 Insulating materials for IGFET (EPO)
Patents: 446
Patent Applications: 32
- E29.164 With at least one ferroelectric layer (EPO)
Patents: 89
Patent Applications: 12
- E29.165 Multiple layers (EPO)
Patents: 402
Patent Applications: 31
- E29.166 Types of semiconductor device (EPO)
Patents: 16
Patent Applications: 283
- E29.167 Controllable by plural effects that include variations in magnetic field, mechanical force, or electric current/potential applied to device or one or more electrodes of device (EPO)
Patents: 17
Patent Applications: 9
- E29.168 Quantum effect device (EPO)
Patents: 49
Patent Applications: 241
- E29.169 Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO)
Patents: 5
Patent Applications: 34
- E29.17 Memory effect devices (EPO)
Patents: 41
Patent Applications: 92
- E29.171 Bipolar device (EPO)
Patents: 5
Patent Applications: 26
- E29.172 Double-base diode (EPO)
Patents: 3
Patent Applications: 1
- E29.173 Transistor-type device (i.e., able to continuously respond to applied control signal)
Patents: 43
Patent Applications: 25
- E29.174 Bipolar junction transistor
Patents: 67
Patent Applications: 97
- E29.175 Structurally associated with other devices (EPO)
Patents: 64
Patent Applications: 9
- E29.176 Device being resistive element (e.g., ballasting resistor) (EPO)
Patents: 71
Patent Applications: 3
- E29.177 Point contact transistors (EPO)
Patents: 1
Patent Applications: 1
- E29.178 Schottky transistors (EPO)
Patents: 2
Patent Applications: 5
- E29.179 Tunnel transistors (EPO)
Patents: 15
Patent Applications: 0
- E29.18 Avalanche transistors (EPO)
Patents: 5
Patent Applications: 2
- E29.181 Transistors with hook collector (i.e., collector having two layers of opposite conductivity type (e.g., SCR)) (EPO)
Patents: 4
Patent Applications: 30
- E29.182 Bipolar thin-film transistors (EPO)
Patents: 118
Patent Applications: 3
- E29.183 Vertical transistor (EPO)
Patents: 174
Patent Applications: 20
- E29.184 Having emitter-base and base-collector junctions in same plane (EPO)
Patents: 198
Patent Applications: 1
- E29.185 Having emitter-base junction and base-collector junction on different surfaces (e.g., mesa planar transistor) (EPO)
Patents: 99
Patent Applications: 5
- E29.186 Inverse vertical transistor (EPO)
Patents: 22
Patent Applications: 0
- E29.187 Lateral transistor (EPO)
Patents: 219
Patent Applications: 18
- E29.188 Hetero-junction transistor (EPO)
Patents: 34
Patent Applications: 82
- E29.189 Vertical transistors (EPO)
Patents: 345
Patent Applications: 11
- E29.19 Having two-dimensional base (e.g., modulation-doped base, inversion layer base, delta-doped base) (EPO)
Patents: 18
Patent Applications: 0
- E29.191 Having emitter comprising one or more nonmonocrystalline elements of Group IV (e.g., amorphous silicon) alloys comprising Group IV elements (EPO)
Patents: 30
Patent Applications: 2
- E29.192 Resonant tunneling transistors (EPO)
Patents: 43
Patent Applications: 1
- E29.193 Comprising lattice mismatched active layers (e.g., SiGe strained layer transistors) (EPO)
Patents: 178
Patent Applications: 18
- E29.194 Controlled by field effect (e.g., bipolar static induction transistor (BSIT)) (EPO)
Patents: 58
Patent Applications: 16
- E29.195 Gated diode structure (EPO)
Patents: 74
Patent Applications: 4
- E29.196 With PN junction gate (e.g., field-controlled thyristor (FCTh), static induction thyristor (SITh)) (EPO)
Patents: 117
Patent Applications: 2
- E29.197 Insulated gate bipolar mode transistor (e.g., IGBT; IGT; COMFET) (EPO)
Patents: 115
Patent Applications: 174
- E29.198 Transistor with vertical current flow (EPO)
Patents: 360
Patent Applications: 63
- E29.199 With both emitter and collector contacts in same substrate side (EPO)
Patents: 38
Patent Applications: 7
- E29.2 With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (EPO)
Patents: 66
Patent Applications: 2
- E29.201 And gate structure lying on slanted or vertical surface or formed in groove (e.g., trench gate IGBT) (EPO)
Patents: 204
Patent Applications: 41
- E29.202 Thin-film device (EPO)
Patents: 95
Patent Applications: 13
- E29.211 Thyristor-type device (e.g., having four-zone regenerative action) (EPO)
Patents: 111
Patent Applications: 59
- E29.212 Gate-turn-off device (EPO)
Patents: 147
Patent Applications: 6
- E29.213 With turn off by field effect (EPO)
Patents: 17
Patent Applications: 4
- E29.214 Produced by insulated gate structure (EPO)
Patents: 188
Patent Applications: 6
- E29.215 Bidirectional device (e.g., triac) (EPO)
Patents: 97
Patent Applications: 18
- E29.216 With turn on by field effect (EPO)
Patents: 153
Patent Applications: 3
- E29.217 Combined structurally with at least one other device (EPO)
Patents: 31
Patent Applications: 3
- E29.218 Combined with capacitor or resistor (EPO)
Patents: 26
Patent Applications: 4
- E29.219 Combined with diode (EPO)
Patents: 24
Patent Applications: 1
- E29.22 Antiparallel diode (EPO)
Patents: 36
Patent Applications: 0
- E29.221 Combined with field-effect transistor (EPO)
Patents: 35
Patent Applications: 3
- E29.222 Having built-in localized breakdown/breakover region (EPO)
Patents: 27
Patent Applications: 1
- E29.223 Having amplifying gate structure (e.g., Darlington configuration) (EPO)
Patents: 67
Patent Applications: 1
- E29.224 Asymmetrical thyristor (EPO)
Patents: 12
Patent Applications: 0
- E29.225 Lateral thyristor (EPO)
Patents: 80
Patent Applications: 8
- E29.226 Unipolar device (EPO)
Patents: 17
Patent Applications: 180
- E29.227 Charge transfer device (EPO)
Patents: 7
Patent Applications: 8
- E29.228 Charge-coupled device (EPO)
Patents: 25
Patent Applications: 4
- E29.229 With field effect produced by insulated gate (EPO)
Patents: 38
Patent Applications: 24
- E29.23 Input structure (EPO)
Patents: 93
Patent Applications: 0
- E29.231 Output structure (EPO)
Patents: 127
Patent Applications: 0
- E29.232 Structure for improving output signal (EPO)
Patents: 22
Patent Applications: 0
- E29.233 Buried channel CCD (EPO)
Patents: 62
Patent Applications: 1
- E29.234 Two-phase CCD (EPO)
Patents: 49
Patent Applications: 2
- E29.235 Three-phase CCD (EPO)
Patents: 11
Patent Applications: 0
- E29.236 Four-phase CCD (EPO)
Patents: 17
Patent Applications: 0
- E29.237 Surface channel CCD (EPO)
Patents: 45
Patent Applications: 1
- E29.238 Two-phase CCD (EPO)
Patents: 50
Patent Applications: 0
- E29.239 Three-phase CCD (EPO)
Patents: 19
Patent Applications: 0
- E29.24 Four-phase CCD (EPO)
Patents: 18
Patent Applications: 0
- E29.241 Hot electron transistor (HET) or metal base transistor (MBT) (EPO)
Patents: 117
Patent Applications: 8
- E29.242 Field-effect transistor (EPO)
Patents: 99
Patent Applications: 431
- E29.243 Using static field induced region (e.g., SIT, PBT) (EPO)
Patents: 171
Patent Applications: 1
- E29.244 Velocity modulations transistor (i.e., VMT) (EPO)
Patents: 10
Patent Applications: 0
- E29.245 With one-dimensional charge carrier gas channel (e.g., quantum wire FET) (EPO)
Patents: 51
Patent Applications: 72
- E29.246 With two-dimensional charge carrier gas channel (e.g., HEMT; with two-dimensional charge-carrier layer formed at heterojunction interface) (EPO)
Patents: 41
Patent Applications: 377
- E29.247 With inverted single heterostructure (i.e., with active layer formed on top of wide bandgap layer (e.g., IHEMT)) (EPO)
Patents: 21
Patent Applications: 6
- E29.248 With confinement of carriers by at least two heterojunctions (e.g., DHHEMT, quantum well HEMT, DHMODFET) (EPO)
Patents: 34
Patent Applications: 8
- E29.249 Using Group III-V semiconductor material (EPO)
Patents: 220
Patent Applications: 10
- E29.25 With more than one donor layer (EPO)
Patents: 29
Patent Applications: 1
- E29.251 With delta or planar doped donor layer (EPO)
Patents: 21
Patent Applications: 2
- E29.252 With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure MIS-like HEMT)) (EPO)
Patents: 33
Patent Applications: 8
- E29.253 With wide bandgap charge-carrier supplying layer (e.g., direct single heterostructure MODFET) (EPO)
Patents: 117
Patent Applications: 10
- E29.254 With delta-doped channel (EPO)
Patents: 16
Patent Applications: 1
- E29.255 With field effect produced by insulated gate (EPO)
Patents: 520
Patent Applications: 1935
- E29.256 With channel containing layer contacting drain drift region (e.g., DMOS transistor) (EPO)
Patents: 353
Patent Applications: 319
- E29.257 Having vertical bulk current component or current vertically following trench gate (e.g., vertical power DMOS transistor) (EPO)
Patents: 629
Patent Applications: 163
- E29.258 With both source and drain contacts in same substrate side (EPO)
Patents: 116
Patent Applications: 2
- E29.259 With nonplanar surface (EPO)
Patents: 145
Patent Applications: 1
- E29.26 Channel structure lying under slanted or vertical surface or being formed along surface of groove (e.g., trench gate DMOSFET) (EPO)
Patents: 413
Patent Applications: 16
- E29.261 With at least part of active region on insulating substrate (e.g., lateral DMOS in oxide isolated well) (EPO)
Patents: 102
Patent Applications: 130
- E29.262 Vertical transistor (EPO)
Patents: 278
Patent Applications: 812
- E29.263 Comprising gate-to-body connection (i.e., bulk dynamic threshold voltage MOSFET) (EPO)
Patents: 15
Patent Applications: 10
- E29.264 With multiple gate structure (EPO)
Patents: 148
Patent Applications: 204
- E29.265 Structure comprising MOS gate and at least one non-MOS gate (e.g., JFET or MESFET gate) (EPO)
Patents: 41
Patent Applications: 10
- E29.266 With lightly doped drain or source extension (EPO)
Patents: 347
Patent Applications: 208
- E29.267 With nonplanar structure (e.g., gate or source or drain being nonplanar) (EPO)
Patents: 241
Patent Applications: 8
- E29.268 Source region and drain region having nonsymmetrical structure about gate electrode (EPO)
Patents: 505
Patent Applications: 19
- E29.269 With overlap between lightly doped extension and gate electrode (EPO)
Patents: 204
Patent Applications: 18
- E29.27 With buried channel (EPO)
Patents: 122
Patent Applications: 16
- E29.271 With Schottky drain or source contact (EPO)
Patents: 70
Patent Applications: 28
- E29.272 Gate comprising ferroelectric layer (EPO)
Patents: 128
Patent Applications: 14
- E29.273 Thin-film transistor (EPO)
Patents: 75
Patent Applications: 635
- E29.274 Vertical transistor (EPO)
Patents: 139
Patent Applications: 13
- E29.275 With multiple gates (EPO)
Patents: 372
Patent Applications: 29
- E29.276 With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (EPO)
Patents: 50
Patent Applications: 3
- E29.277 Characterized by drain or source properties (EPO)
Patents: 290
Patent Applications: 1
- E29.278 With LDD structure or extension or offset region or characterized by doping profile (EPO)
Patents: 452
Patent Applications: 5
- E29.279 Asymmetrical source and drain regions (EPO)
Patents: 236
Patent Applications: 0
- E29.28 For preventing leakage current (EPO)
Patents: 143
Patent Applications: 0
- E29.281 For preventing kink or snapback effect (e.g., discharging minority carriers of channel region for preventing bipolar effect) (EPO)
Patents: 217
Patent Applications: 2
- E29.282 With light shield (EPO)
Patents: 114
Patent Applications: 3
- E29.283 With supplementary region or layer for improving flatness of device (EPO)
Patents: 91
Patent Applications: 0
- E29.284 With drain or source connected to bulk conducting substrate (EPO)
Patents: 34
Patent Applications: 0
- E29.285 Silicon transistor (EPO)
Patents: 19
Patent Applications: 16
- E29.286 Monocrystalline only (EPO)
Patents: 200
Patent Applications: 75
- E29.287 SOS transistor (EPO)
Patents: 67
Patent Applications: 9
- E29.288 Nonmonocrystalline (EPO)
Patents: 22
Patent Applications: 27
- E29.289 Amorphous silicon transistor (EPO)
Patents: 11
Patent Applications: 62
- E29.29 With top gate (EPO)
Patents: 70
Patent Applications: 11
- E29.291 With inverted transistor structure (EPO)
Patents: 156
Patent Applications: 115
- E29.292 Polycrystalline or microcrystalline silicon transistor (EPO)
Patents: 22
Patent Applications: 78
- E29.293 With top gate (EPO)
Patents: 338
Patent Applications: 24
- E29.294 With inverted transistor structure (EPO)
Patents: 150
Patent Applications: 69
- E29.295 Characterized by insulating substrate or support (EPO)
Patents: 157
Patent Applications: 26
- E29.296 Comprising Group III-V or II-VI compound, or of Se, Te, or oxide semiconductor (EPO)
Patents: 61
Patent Applications: 295
- E29.297 Comprising Group IV non-Si semiconductor materials or alloys (e.g., Ge, SiN alloy, SiC alloy) (EPO)
Patents: 112
Patent Applications: 7
- E29.298 With multilayer structure or superlattice structure (EPO)
Patents: 43
Patent Applications: 2
- E29.299 Characterized by property or structure of channel or contact thereto (EPO)
Patents: 401
Patent Applications: 15
- E29.3 With floating gate (EPO)
Patents: 84
Patent Applications: 928
- E29.301 Programmable by two single electrons (EPO)
Patents: 62
Patent Applications: 1
- E29.302 Hi-lo programming levels only (EPO)
Patents: 209
Patent Applications: 11
- E29.303 Charging by injection of carriers through conductive insulator (e.g., Poole-Frankel conduction) (EPO)
Patents: 30
Patent Applications: 0
- E29.304 Charging by tunneling of carriers (e.g., Fowler-Nordheim tunneling) (EPO)
Patents: 533
Patent Applications: 61
- E29.305 Charging by hot carrier injection (EPO)
Patents: 17
Patent Applications: 2
- E29.306 Hot carrier injection from channel (EPO)
Patents: 459
Patent Applications: 3
- E29.307 Hot carrier produced by avalanche breakdown of PN junction (e.g., FAMOS) (EPO)
Patents: 76
Patent Applications: 0
- E29.308 Programmable with more than two possible different levels (EPO)
Patents: 111
Patent Applications: 1
- E29.309 With charge trapping gate insulator (e.g., MNOS-memory transistors) (EPO)
Patents: 253
Patent Applications: 916
- E29.31 With field effect produced by PN or other rectifying junction gate (i.e., potential barrier) (EPO)
Patents: 36
Patent Applications: 65
- E29.311 With Schottky drain or source contact (EPO)
Patents: 8
Patent Applications: 4
- E29.312 With PN junction gate (e.g., PN homojunction gate) (EPO)
Patents: 144
Patent Applications: 50
- E29.313 Vertical transistors (EPO)
Patents: 79
Patent Applications: 12
- E29.314 Thin-film JFET (EPO)
Patents: 23
Patent Applications: 6
- E29.315 With heterojunction gate (e.g., transistors with semiconductor layer acting as gate insulating layer) (EPO)
Patents: 114
Patent Applications: 35
- E29.316 Programmable transistor (e.g., with charge-trapping quantum well) (EPO)
Patents: 11
Patent Applications: 2
- E29.317 With Schottky gate (EPO)
Patents: 264
Patent Applications: 47
- E29.318 Vertical transistors (EPO)
Patents: 60
Patent Applications: 6
- E29.319 With multiple gate (EPO)
Patents: 68
Patent Applications: 5
- E29.32 Thin-film MESFET (EPO)
Patents: 30
Patent Applications: 0
- E29.321 With recessed gate (EPO)
Patents: 104
Patent Applications: 4
- E29.322 Single electron transistors: Coulomb blockade device (EPO)
Patents: 70
Patent Applications: 3
- E29.323 Controllable by variation of magnetic field applied to device (EPO)
Patents: 56
Patent Applications: 488
- E29.324 Controllable by variation of applied mechanical force (e.g., of pressure) (EPO)
Patents: 125
Patent Applications: 625
- E29.325 Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (EPO)
Patents: 28
Patent Applications: 133
- E29.326 Resistor with PN junction (EPO)
Patents: 142
Patent Applications: 30
- E29.327 Diode (EPO)
Patents: 221
Patent Applications: 89
- E29.328 Planar PN junction diode (EPO)
Patents: 101
Patent Applications: 10
- E29.329 Mesa PN junction diode (EPO)
Patents: 25
Patent Applications: 6
- E29.33 Hi-lo semiconductor device (e.g., memory device) (EPO)
Patents: 28
Patent Applications: 1
- E29.331 Charge trapping diode (EPO)
Patents: 26
Patent Applications: 0
- E29.332 Punchthrough diode (i.e., with bulk potential barrier (e.g., camel diode, planar doped barrier diode, graded bandgap diode)) (EPO)
Patents: 28
Patent Applications: 3
- E29.333 Point contact diode (EPO)
Patents: 1
Patent Applications: 0
- E29.334 Transit-time diode (e.g., IMPATT, TRAPATT diode) (EPO)
Patents: 58
Patent Applications: 0
- E29.335 Avalanche diode (e.g., Zener diode) (EPO)
Patents: 115
Patent Applications: 42
- E29.336 PIN diode (EPO)
Patents: 97
Patent Applications: 37
- E29.337 Thyristor diode (i.e., having only two terminals and no control electrode (e.g., Shockley diode, break-over diode)) (EPO)
Patents: 104
Patent Applications: 6
- E29.338 Schottky diode (EPO)
Patents: 301
Patent Applications: 100
- E29.339 Tunneling diode (EPO)
Patents: 36
Patent Applications: 13
- E29.34 Resonant tunneling diode (i.e., RTD, RTBD) (EPO)
Patents: 69
Patent Applications: 5
- E29.341 Esaki diode (EPO)
Patents: 9
Patent Applications: 3
- E29.342 Capacitor with potential barrier or surface barrier (EPO)
Patents: 25
Patent Applications: 234
- E29.343 Conductor-insulator-conductor capacitor on semiconductor substrate (EPO)
Patents: 190
Patent Applications: 269
- E29.344 Variable capacitance diode (e.g., varactors) (EPO)
Patents: 94
Patent Applications: 60
- E29.345 Metal-insulator-semiconductor (e.g., MOS capacitor) (EPO)
Patents: 213
Patent Applications: 364
- E29.346 Trench capacitor (EPO)
Patents: 163
Patent Applications: 29
- E29.347 Controllable by thermal signal (e.g., IR) (EPO)
Patents: 24
Patent Applications: 66
- E45.001 SOLID-STATE DEVICES ADAPTED FOR RECTIFYING, AMPLIFYING, OSCILLATING, OR SWITCHING WITHOUT POTENTIAL-JUMP BARRIER OR SURFACE BARRIER, E.G., DIELECTRIC TRIODES; OVSHINSKY-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT THEREOF, OR OF PARTS THEREOF (EPO)
Patents: 137
Patent Applications: 259
- E45.002 Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)
Patents: 162
Patent Applications: 641
- E45.003 Switching materials being oxides or nitrides (EPO)
Patents: 28
Patent Applications: 143
- E45.004 N: Light-controlled Ovshinsky devices (EPO)
Patents: 9
Patent Applications: 0
- E45.005 Charge density wave transport devices (EPO)
Patents: 0
Patent Applications: 0
- E45.006 Solid-state travelling-wave devices (EPO)
Patents: 9
Patent Applications: 3
- E25.001 ASSEMBLIES CONSISTING OF PLURALITY OF INDIVIDUAL SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO)
Patents: 1
Patent Applications: 44
- E25.002 All devices being of same type, e.g., assemblies of rectifier diodes (EPO)
Patents: 4
Patent Applications: 9
- E25.003 Devices not having separate containers (EPO)
Patents: 6
Patent Applications: 3
- E25.004 Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation (EPO)
Patents: 1
Patent Applications: 3
- E25.005 Devices being arranged next to each other (EPO)
Patents: 46
Patent Applications: 2
- E25.006 Stacked arrangements of devices (EPO)
Patents: 82
Patent Applications: 30
- E25.007 Devices being solar cells (EPO)
Patents: 56
Patent Applications: 0
- E25.008 Organic solid-state devices (EPO)
Patents: 12
Patent Applications: 2
- E25.009 Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation, e.g., photovoltaic modules based on organic solar cells (EPO)
Patents: 5
Patent Applications: 0
- E25.01 Device consisting of plurality of semiconductor or other solid state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO)
Patents: 42
Patent Applications: 16
- E25.011 Devices being arranged next and on each other, i.e., mixed assemblies (EPO)
Patents: 332
Patent Applications: 3
- E25.012 Devices being arranged next to each other (EPO)
Patents: 336
Patent Applications: 2
- E25.013 Stacked arrangements of devices (EPO)
Patents: 874
Patent Applications: 168
- E25.014 Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)
Patents: 10
Patent Applications: 13
- E25.015 Devices being arranged next and on each other, i.e., mixed assemblies (EPO)
Patents: 29
Patent Applications: 0
- E25.016 Devices being arranged next to each other (EPO)
Patents: 246
Patent Applications: 8
- E25.017 Apertured devices mounted on one or more rods passed through apertures (EPO)
Patents: 6
Patent Applications: 0
- E25.018 Stacked arrangements of nonapertured devices (EPO)
Patents: 73
Patent Applications: 30
- E25.019 Incoherent light-emitting semiconductor devices having potential or surface barrier (EPO)
Patents: 8
Patent Applications: 5
- E25.02 Devices being arranged next to each other (EPO)
Patents: 202
Patent Applications: 4
- E25.021 Stacked arrangements of devices (EPO)
Patents: 63
Patent Applications: 2
- E25.022 Devices having separate containers (EPO)
Patents: 46
Patent Applications: 1
- E25.023 Device consisting of plurality of semiconductor or other solid-state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO)
Patents: 560
Patent Applications: 9
- E25.024 Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)
Patents: 6
Patent Applications: 3
- E25.025 Mixed assemblies (EPO)
Patents: 70
Patent Applications: 0
- E25.026 Devices being arranged next to each other (EPO)
Patents: 84
Patent Applications: 1
- E25.027 Stacked arrangements of devices (EPO)
Patents: 81
Patent Applications: 62
- E25.028 Incoherent light-emitting semiconductor devices having potential or surface barrier (EPO)
Patents: 43
Patent Applications: 0
- E25.029 Devices being of two or more types, e.g., forming hybrid circuits (EPO)
Patents: 252
Patent Applications: 45
- E25.03 Devices being mounted on two or more different substrates (EPO)
Patents: 101
Patent Applications: 11
- E25.031 Containers (EPO)
Patents: 118
Patent Applications: 2
- E25.032 Comprising optoelectronic devices, e.g., LED, photodiodes (EPO)
Patents: 210
Patent Applications: 12
- E23.001 PACKAGING, INTERCONNECTS, AND MARKINGS FOR SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO)
Patents: 57
Patent Applications: 264
- E23.002 Details not otherwise provided for, e.g., protection against moisture (EPO)
Patents: 183
Patent Applications: 565
- E23.003 Mountings, e.g., nondetachable insulating substrates (EPO)
Patents: 24
Patent Applications: 173
- E23.004 Characterized by shape (EPO)
Patents: 760
Patent Applications: 21
- E23.005 Characterized by material or its electrical properties (EPO)
Patents: 19
Patent Applications: 40
- E23.006 Metallic substrates having insulating layers (EPO)
Patents: 225
Patent Applications: 11
- E23.007 Organic substrates, e.g., plastic (EPO)
Patents: 210
Patent Applications: 8
- E23.008 Semiconductor insulating substrates (EPO)
Patents: 110
Patent Applications: 16
- E23.009 Ceramic or glass substrates (EPO)
Patents: 395
Patent Applications: 23
- E23.01 Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (EPO)
Patents: 83
Patent Applications: 1856
- E23.011 Internal lead connections, e.g., via connections, feedthrough structures (EPO)
Patents: 345
Patent Applications: 835
- E23.012 Consisting of lead-in layers inseparably applied to semiconductor body (EPO)
Patents: 32
Patent Applications: 70
- E23.013 Bridge structure with air gap (EPO)
Patents: 73
Patent Applications: 7
- E23.014 Beam leads (EPO)
Patents: 39
Patent Applications: 14
- E23.015 Pads with extended contours, e.g., grid structure, branch structure, finger structure (EPO)
Patents: 188
Patent Applications: 23
- E23.016 For devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g., silicon on sapphire devices, i.e., SOS (EPO)
Patents: 64
Patent Applications: 2
- E23.017 Materials (EPO)
Patents: 66
Patent Applications: 27
- E23.018 Conductive organic material or pastes, e.g., conductive adhesives, inks (EPO)
Patents: 103
Patent Applications: 7
- E23.019 Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (EPO)
Patents: 658
Patent Applications: 120
- E23.02 Bonding areas, e.g., pads (EPO)
Patents: 663
Patent Applications: 134
- E23.021 Bump or ball contacts (EPO)
Patents: 1057
Patent Applications: 308
- E23.022 Overhang structure (EPO)
Patents: 12
Patent Applications: 1
- E23.023 Consisting of soldered or bonded constructions (EPO)
Patents: 90
Patent Applications: 752
- E23.024 Wire-like arrangements or pins or rods (EPO)
Patents: 127
Patent Applications: 233
- E23.025 Characterized by materials of wires or their coatings (EPO)
Patents: 98
Patent Applications: 22
- E23.026 Bases or plates or solder therefor (EPO)
Patents: 57
Patent Applications: 27
- E23.027 Having heterogeneous or anisotropic structure (EPO)
Patents: 33
Patent Applications: 1
- E23.028 Characterized by material (EPO)
Patents: 65
Patent Applications: 7
- E23.029 Semiconductor (EPO)
Patents: 8
Patent Applications: 1
- E23.03 Carbon (EPO)
Patents: 16
Patent Applications: 1
- E23.031 Lead frames or other flat leads (EPO)
Patents: 132
Patent Applications: 784
- E23.032 Additional leads (EPO)
Patents: 53
Patent Applications: 11
- E23.033 Additional leads being bump or wire (EPO)
Patents: 62
Patent Applications: 47
- E23.034 Additional leads being tape carrier or flat leads (EPO)
Patents: 101
Patent Applications: 7
- E23.035 Additional leads being multilayer (EPO)
Patents: 36
Patent Applications: 1
- E23.036 Additional leads being wiring board (EPO)
Patents: 151
Patent Applications: 15
- E23.037 Characterized by die pad (EPO)
Patents: 341
Patent Applications: 120
- E23.038 Insulative substrate being used as die pad, e.g., ceramic, plastic (EPO)
Patents: 46
Patent Applications: 7
- E23.039 Chip-on-leads or leads-on-chip techniques, i.e., inner lead fingers being used as die pad (EPO)
Patents: 779
Patent Applications: 34
- E23.04 Having bonding material between chip and die pad (EPO)
Patents: 137
Patent Applications: 45
- E23.041 Multilayer (EPO)
Patents: 68
Patent Applications: 4
- E23.042 Plurality of lead frames mounted in one device (EPO)
Patents: 137
Patent Applications: 13
- E23.043 Geometry of lead frame (EPO)
Patents: 481
Patent Applications: 48
- E23.044 For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)
Patents: 314
Patent Applications: 6
- E23.045 Deformation absorbing parts in lead frame plane, e.g., meanderline shape (EPO)
Patents: 38
Patent Applications: 10
- E23.046 Cross-section geometry (EPO)
Patents: 233
Patent Applications: 3
- E23.047 Characterized by bent parts (EPO)
Patents: 157
Patent Applications: 10
- E23.048 Bent parts being outer leads (EPO)
Patents: 172
Patent Applications: 13
- E23.049 Insulating layers on lead frame, e.g., bridging members (EPO)
Patents: 176
Patent Applications: 5
- E23.05 Side rails of lead frame, e.g., with perforations, sprocket holes (EPO)
Patents: 30
Patent Applications: 0
- E23.051 Specifically adapted to facilitate heat dissipation (EPO)
Patents: 172
Patent Applications: 89
- E23.052 Assembly of semiconductor devices on lead frame (EPO)
Patents: 387
Patent Applications: 85
- E23.053 Characterized by materials of lead frames or layers thereon (EPO)
Patents: 96
Patent Applications: 10
- E23.054 Metallic layers on lead frames (EPO)
Patents: 229
Patent Applications: 11
- E23.055 Consisting of thin flexible metallic tape with or without film carrier (EPO)
Patents: 464
Patent Applications: 3
- E23.056 Insulating layers on lead frames (EPO)
Patents: 58
Patent Applications: 5
- E23.057 Capacitor integral with or on lead frame (EPO)
Patents: 85
Patent Applications: 11
- E23.058 Battery in combination with lead frame (EPO)
Patents: 19
Patent Applications: 1
- E23.059 Oscillators in combination with lead frame (EPO)
Patents: 12
Patent Applications: 0
- E23.06 Leads, i.e., metallizations or lead frames on insulating substrates, e.g., chip carriers (EPO)
Patents: 126
Patent Applications: 167
- E23.061 Leads being also applied on sidewalls or bottom of substrate, e.g., leadless packages for surface mounting (EPO)
Patents: 238
Patent Applications: 14
- E23.062 Multilayer substrates (EPO)
Patents: 363
Patent Applications: 22
- E23.063 Chip support structure consisting of plurality of insulating substrates (EPO)
Patents: 203
Patent Applications: 9
- E23.064 For flat cards, e.g., credit cards (EPO)
Patents: 166
Patent Applications: 17
- E23.065 Flexible insulating substrates (EPO)
Patents: 566
Patent Applications: 19
- E23.066 Lead frames fixed on or encapsulated in insulating substrates (EPO)
Patents: 242
Patent Applications: 5
- E23.067 Via connections through substrates, e.g., pins going through substrate, coaxial cables (EPO)
Patents: 881
Patent Applications: 58
- E23.068 Additional leads joined to metallizations on insulating substrate, e.g., pins, bumps, wires, flat leads (EPO)
Patents: 549
Patent Applications: 453
- E23.069 Spherical bumps on substrate for external connection, e.g., ball grid arrays (BGA) (EPO)
Patents: 958
Patent Applications: 262
- E23.07 Geometry or layout (EPO)
Patents: 540
Patent Applications: 67
- E23.071 For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)
Patents: 20
Patent Applications: 1
- E23.072 Characterized by materials (EPO)
Patents: 187
Patent Applications: 32
- E23.073 Conductive materials containing semiconductor material (EPO)
Patents: 11
Patent Applications: 1
- E23.074 Carbon, e.g., fullerenes (EPO)
Patents: 7
Patent Applications: 2
- E23.075 Conductive materials containing organic materials or pastes, e.g., for thick films (EPO)
Patents: 278
Patent Applications: 0
- E23.076 Conductive materials containing superconducting material (EPO)
Patents: 31
Patent Applications: 0
- E23.077 Materials of insulating layers or coatings (EPO)
Patents: 331
Patent Applications: 4
- E23.078 Flexible arrangements, e.g., pressure contacts without soldering (EPO)
Patents: 354
Patent Applications: 18
- E23.079 For integrated circuit devices, e.g., power bus, number of leads (EPO)
Patents: 536
Patent Applications: 201
- E23.08 Arrangements for cooling, heating, ventilating or temperature compensation; temperature-sensing arrangements (EPO)
Patents: 188
Patent Applications: 358
- E23.081 Arrangements for heating (EPO)
Patents: 50
Patent Applications: 9
- E23.082 Cooling arrangements using Peltier effect (EPO)
Patents: 103
Patent Applications: 9
- E23.083 Mountings or securing means for detachable cooling or heating arrangements; fixed by friction, plugs or springs (EPO)
Patents: 67
Patent Applications: 7
- E23.084 With bolts or screws (EPO)
Patents: 400
Patent Applications: 6
- E23.085 For stacked arrangements of plurality of semiconductor devices (EPO)
Patents: 59
Patent Applications: 107
- E23.086 Snap-on arrangements, e.g., clips (EPO)
Patents: 576
Patent Applications: 4
- E23.087 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling (EPO)
Patents: 124
Patent Applications: 9
- E23.088 Cooling by change of state, e.g., use of heat pipes (EPO)
Patents: 419
Patent Applications: 6
- E23.089 By melting or evaporation of solids (EPO)
Patents: 41
Patent Applications: 0
- E23.09 Auxiliary members in containers characterized by their shape, e.g., pistons (EPO)
Patents: 189
Patent Applications: 2
- E23.091 Bellows (EPO)
Patents: 36
Patent Applications: 0
- E23.092 Auxiliary members in encapsulations (EPO)
Patents: 607
Patent Applications: 4
- E23.093 In combination with jet impingement (EPO)
Patents: 28
Patent Applications: 0
- E23.094 Pistons, e.g., spring-loaded members (EPO)
Patents: 97
Patent Applications: 0
- E23.095 Complete device being wholly immersed in fluid other than air (EPO)
Patents: 22
Patent Applications: 2
- E23.096 Fluid being liquefied gas, e.g., in cryogenic vessel (EPO)
Patents: 48
Patent Applications: 0
- E23.097 Involving transfer of heat by flowing fluids (EPO)
Patents: 9
Patent Applications: 18
- E23.098 By flowing liquids (EPO)
Patents: 437
Patent Applications: 23
- E23.099 By flowing gases, e.g., air (EPO)
Patents: 540
Patent Applications: 10
- E23.1 Jet impingement (EPO)
Patents: 63
Patent Applications: 0
- E23.101 Selection of materials, or shaping, to facilitate cooling or heating, e.g., heat sinks (EPO)
Patents: 399
Patent Applications: 193
- E23.102 Cooling facilitated by shape of device (EPO)
Patents: 249
Patent Applications: 17
- E23.103 Foil-like cooling fins or heat sinks (EPO)
Patents: 367
Patent Applications: 23
- E23.104 Characterized by shape of housing (EPO)
Patents: 210
Patent Applications: 5
- E23.105 Wire-like or pin-like cooling fins or heat sinks (EPO)
Patents: 353
Patent Applications: 4
- E23.106 Laminates or multilayers, e.g., direct bond copper ceramic substrates (EPO)
Patents: 265
Patent Applications: 8
- E23.107 Organic materials with or without thermo-conductive filler (EPO)
Patents: 207
Patent Applications: 2
- E23.108 Semiconductor materials (EPO)
Patents: 27
Patent Applications: 0
- E23.109 Metallic materials (EPO)
Patents: 133
Patent Applications: 10
- E23.11 Cooling facilitated by selection of materials for device (or materials for thermal expansion adaptation, e.g., carbon) (EPO)
Patents: 35
Patent Applications: 28
- E23.111 Diamond (EPO)
Patents: 151
Patent Applications: 9
- E23.112 Having heterogeneous or anisotropic structure, e.g., powder or fibers in matrix, wire mesh, porous structures (EPO)
Patents: 228
Patent Applications: 3
- E23.113 Ceramic materials or glass (EPO)
Patents: 69
Patent Applications: 3
- E23.114 Protection against radiation, e.g., light, electromagnetic waves (EPO)
Patents: 409
Patent Applications: 250
- E23.115 Against alpha rays (EPO)
Patents: 83
Patent Applications: 14
- E23.116 Encapsulations, e.g., encapsulating layers, coatings, e.g., for protection (EPO)
Patents: 38
Patent Applications: 349
- E23.117 Characterized by material, e.g., carbon (EPO)
Patents: 38
Patent Applications: 40
- E23.118 Oxides or nitrides or carbides, e.g., ceramics, glass (EPO)
Patents: 193
Patent Applications: 11
- E23.119 Organic, e.g., plastic, epoxy (EPO)
Patents: 488
Patent Applications: 52
- E23.12 Organo-silicon compounds, e.g., silicone (EPO)
Patents: 102
Patent Applications: 9
- E23.121 Containing filler (EPO)
Patents: 146
Patent Applications: 15
- E23.122 Semiconductor material, e.g., amorphous silicon (EPO)
Patents: 37
Patent Applications: 1
- E23.123 Characterized by arrangement or shape (EPO)
Patents: 34
Patent Applications: 28
- E23.124 Device being completely enclosed (EPO)
Patents: 797
Patent Applications: 59
- E23.125 Substrate forming part of encapsulation (EPO)
Patents: 546
Patent Applications: 9
- E23.126 Double encapsulation or coating and encapsulation (EPO)
Patents: 227
Patent Applications: 3
- E23.127 Sealing arrangements between parts, e.g., adhesion promoters (EPO)
Patents: 65
Patent Applications: 10
- E23.128 Encapsulation having cavity (EPO)
Patents: 84
Patent Applications: 10
- E23.129 Partial encapsulation or coating (EPO)
Patents: 107
Patent Applications: 40
- E23.13 Coating being foil (EPO)
Patents: 43
Patent Applications: 0
- E23.131 Coating or filling in grooves made in semiconductor body (EPO)
Patents: 43
Patent Applications: 0
- E23.132 Coating being directly applied to semiconductor body, e.g., passivation layer (EPO)
Patents: 319
Patent Applications: 3
- E23.133 Coating also covering sidewalls of semiconductor body (EPO)
Patents: 49
Patent Applications: 3
- E23.134 Multilayer coating (EPO)
Patents: 89
Patent Applications: 5
- E23.135 Fillings or auxiliary members in containers or encapsulations, e.g., centering rings (EPO)
Patents: 166
Patent Applications: 19
- E23.136 Fillings characterized by material, its physical or chemical properties, or its arrangement within complete device (EPO)
Patents: 14
Patent Applications: 10
- E23.137 Including materials for absorbing or reacting with moisture or other undesired substances, e.g., getters (EPO)
Patents: 57
Patent Applications: 13
- E23.138 Gaseous at normal operating temperature of device (EPO)
Patents: 14
Patent Applications: 11
- E23.139 Liquid at normal operating temperature of device (EPO)
Patents: 15
Patent Applications: 4
- E23.14 Solid or gel at normal operating temperature of device (EPO)
Patents: 320
Patent Applications: 12
- E23.141 Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (EPO)
Patents: 114
Patent Applications: 1462
- E23.142 Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (EPO)
Patents: 260
Patent Applications: 280
- E23.143 Crossover interconnections (EPO)
Patents: 72
Patent Applications: 14
- E23.144 Capacitive arrangements or effects of, or between wiring layers (EPO)
Patents: 674
Patent Applications: 18
- E23.145 Via connections in multilevel interconnection structure (EPO)
Patents: 838
Patent Applications: 258
- E23.146 With adaptable interconnections (EPO)
Patents: 145
Patent Applications: 12
- E23.147 Comprising antifuses, i.e., connections having their state changed from nonconductive to conductive (EPO)
Patents: 384
Patent Applications: 70
- E23.148 Change of state resulting from use of external beam, e.g., laser beam or ion beam (EPO)
Patents: 61
Patent Applications: 4
- E23.149 Comprising fuses, i.e., connections having their state changed from conductive to nonconductive (EPO)
Patents: 309
Patent Applications: 194
- E23.15 Change of state resulting from use of external beam, e.g., laser beam or ion beam (EPO)
Patents: 307
Patent Applications: 11
- E23.151 Geometry or layout of interconnection structure (EPO)
Patents: 451
Patent Applications: 85
- E23.152 Cross-sectional geometry (EPO)
Patents: 275
Patent Applications: 18
- E23.153 Arrangements of power or ground buses (EPO)
Patents: 234
Patent Applications: 24
- E23.154 Characterized by materials (EPO)
Patents: 47
Patent Applications: 30
- E23.155 Conductive materials (EPO)
Patents: 1
Patent Applications: 49
- E23.156 Containing superconducting materials (EPO)
Patents: 38
Patent Applications: 0
- E23.157 Based on metals, e.g., alloys, metal silicides (EPO)
Patents: 59
Patent Applications: 65
- E23.158 Principal metal being aluminum (EPO)
Patents: 39
Patent Applications: 6
- E23.159 Aluminum alloys (EPO)
Patents: 90
Patent Applications: 2
- E23.16 Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)
Patents: 582
Patent Applications: 8
- E23.161 Principal metal being copper (EPO)
Patents: 71
Patent Applications: 140
- E23.162 Principal metal being noble metal, e.g., gold (EPO)
Patents: 110
Patent Applications: 11
- E23.163 Principal metal being refractory metal (EPO)
Patents: 179
Patent Applications: 24
- E23.164 Containing semiconductor material, e.g., polysilicon (EPO)
Patents: 258
Patent Applications: 15
- E23.165 Containing carbon, e.g., fullerenes (EPO)
Patents: 10
Patent Applications: 8
- E23.166 Containing conductive organic materials or pastes, e.g., conductive adhesives, inks (EPO)
Patents: 54
Patent Applications: 1
- E23.167 Insulating materials (EPO)
Patents: 835
Patent Applications: 32
- E23.168 Including internal interconnections, e.g., cross-under constructions (EPO)
Patents: 124
Patent Applications: 140
- E23.169 Interconnection structure between plurality of semiconductor chips being formed on or in insulating substrates (EPO)
Patents: 176
Patent Applications: 364
- E23.17 Crossover interconnections, e.g., bridge stepovers (EPO)
Patents: 55
Patent Applications: 2
- E23.171 Adaptable interconnections, e.g., for engineering changes (EPO)
Patents: 181
Patent Applications: 5
- E23.172 Assembly of plurality of insulating substrates (EPO)
Patents: 349
Patent Applications: 34
- E23.173 Multilayer substrates (EPO)
Patents: 372
Patent Applications: 31
- E23.174 Conductive vias through substrate with or without pins, e.g., buried coaxial conductors (EPO)
Patents: 254
Patent Applications: 154
- E23.175 Geometry or layout of interconnection structure (EPO)
Patents: 167
Patent Applications: 33
- E23.176 For flat cards, e.g., credit cards (EPO)
Patents: 49
Patent Applications: 7
- E23.177 Flexible insulating substrates (EPO)
Patents: 212
Patent Applications: 2
- E23.178 Chips being integrally enclosed by interconnect and support structures (EPO)
Patents: 225
Patent Applications: 15
- E23.179 Marks applied to semiconductor devices or parts, e.g., registration marks, test patterns, alignment structures, wafer maps (EPO)
Patents: 833
Patent Applications: 411
- E23.18 Containers; seals (EPO)
Patents: 14
Patent Applications: 230
- E23.181 Characterized by shape of container or parts, e.g., caps, walls (EPO)
Patents: 257
Patent Applications: 79
- E23.182 Container being hollow construction having no base used as mounting for semiconductor body (EPO)
Patents: 21
Patent Applications: 3
- E23.183 Container being hollow construction and having conductive base as mounting as well as lead for the semiconductor body (EPO)
Patents: 15
Patent Applications: 7
- E23.184 Other leads having insulating passage through base (EPO)
Patents: 31
Patent Applications: 3
- E23.185 Other leads being parallel to base (EPO)
Patents: 71
Patent Applications: 0
- E23.186 Other leads being perpendicular to base (EPO)
Patents: 57
Patent Applications: 0
- E23.187 Another lead being formed by cover plate parallel to base plate, e.g., sandwich type (EPO)
Patents: 184
Patent Applications: 1
- E23.188 Container being hollow construction and having insulating or insulated base as mounting for semiconductor body (EPO)
Patents: 50
Patent Applications: 11
- E23.189 Leads being parallel to base (EPO)
Patents: 418
Patent Applications: 2
- E23.19 Leads having passage through base (EPO)
Patents: 141
Patent Applications: 9
- E23.191 Characterized by material of container or its electrical properties (EPO)
Patents: 45
Patent Applications: 34
- E23.192 Material being electrical insulator, e.g., glass (EPO)
Patents: 68
Patent Applications: 18
- E23.193 Characterized by material or arrangement of seals between parts, e.g., between cap and base of container or between leads and walls of container (EPO)
Patents: 507
Patent Applications: 36
- E23.194 Protection against mechanical damage (EPO)
Patents: 130
Patent Applications: 87
- E49.001 SOLID-STATE DEVICES WITH AT LEAST ONE POTENTIAL-JUMP BARRIER OR SURFACE BARRIER USING ACTIVE LAYER OF LOWER ELECTRICAL CONDUCTIVITY THAN MATERIAL ADJACENT THERETO AND THROUGH WHICH CARRIER TUNNELING OCCURS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
Patents: 20
Patent Applications: 31
- E49.002 Devices using Mott metal-insulator transition, e.g., field-effect transistors (EPO)
Patents: 10
Patent Applications: 8
- E49.003 Quantum devices, e.g., quantum interference devices, metal single electron transistor (EPO)
Patents: 21
Patent Applications: 5
- E49.004 Thin-film or thick-film devices (EPO)
Patents: 39
Patent Applications: 7
- E21.001 PROCESSES OR APPARATUS ADAPTED FOR MANUFACTURE OR TREATMENT OF SEMICONDUCTOR OR SOLID-STATE DEVICES OR OF PARTS THEREOF (EPO)
Patents: 73
Patent Applications: 1958
- E21.002 Manufacture or treatment of semiconductor device (EPO)
Patents: 64
Patent Applications: 1456
- E21.003 Manufacture of two-terminal component for integrated circuit (EPO)
Patents: 4
Patent Applications: 127
- E21.004 Of resistor (EPO)
Patents: 454
Patent Applications: 259
- E21.005 Active material comprising carbon, e.g., diamond or diamond-like carbon (EPO)
Patents: 8
Patent Applications: 4
- E21.006 Active material comprising refractory, transition, or noble metal or metal compound, e.g., alloy, silicide, oxide, nitride (EPO)
Patents: 117
Patent Applications: 35
- E21.007 Active material comprising organic conducting material, e.g., conducting polymer (EPO)
Patents: 13
Patent Applications: 1
- E21.008 Of capacitor (EPO)
Patents: 835
Patent Applications: 501
- E21.009 Dielectric having perovskite structure (EPO)
Patents: 578
Patent Applications: 25
- E21.01 Dielectric comprising two or more layers, e.g., buffer layers, seed layers, gradient layers (EPO)
Patents: 245
Patent Applications: 18
- E21.011 Formation of electrode (EPO)
Patents: 718
Patent Applications: 172
- E21.012 With increased surface area, e.g., by roughening, texturing (EPO)
Patents: 266
Patent Applications: 9
- E21.013 With rough surface, e.g., using hemispherical grains (EPO)
Patents: 364
Patent Applications: 4
- E21.014 Having cylindrical, crown, or fin-type shape (EPO)
Patents: 42
Patent Applications: 9
- E21.015 Having horizontal extensions (EPO)
Patents: 18
Patent Applications: 0
- E21.016 Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO)
Patents: 150
Patent Applications: 1
- E21.017 Made by patterning layers, e.g., etching conductive layers (EPO)
Patents: 30
Patent Applications: 3
- E21.018 Having vertical extensions (EPO)
Patents: 72
Patent Applications: 5
- E21.019 Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO)
Patents: 421
Patent Applications: 6
- E21.02 Made by patterning layers, e.g., etching conductive layers (EPO)
Patents: 153
Patent Applications: 15
- E21.021 Having multilayers, e.g., comprising barrier layer and metal layer (EPO)
Patents: 296
Patent Applications: 14
- E21.022 Of inductor (EPO)
Patents: 147
Patent Applications: 92
- E21.023 Making mask on semicond uctor body for further photolithographic processing (EPO)
Patents: 45
Patent Applications: 67
- E21.024 Comprising organic layer (EPO)
Patents: 117
Patent Applications: 12
- E21.025 For lift-off process (EPO)
Patents: 148
Patent Applications: 6
- E21.026 Characterized by treatment of photoresist layer (EPO)
Patents: 61
Patent Applications: 9
- E21.027 Photolith ographic process (EPO)
Patents: 222
Patent Applications: 2
- E21.028 Using laser (EPO)
Patents: 26
Patent Applications: 2
- E21.029 Using anti-reflective coating (EPO)
Patents: 251
Patent Applications: 7
- E21.03 Electro-lithographic process (EPO)
Patents: 57
Patent Applications: 0
- E21.031 X-ray lithographic process (EPO)
Patents: 15
Patent Applications: 0
- E21.032 Ion lithographic process (EPO)
Patents: 11
Patent Applications: 0
- E21.033 Comprising inorganic layer (EPO)
Patents: 476
Patent Applications: 8
- E21.034 For lift-off process (EPO)
Patents: 37
Patent Applications: 3
- E21.035 Characterized by their composition, e.g., multilayer masks, materials (EPO)
Patents: 116
Patent Applications: 6
- E21.036 Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (EPO)
Patents: 61
Patent Applications: 8
- E21.037 Characterized by their behavior during process, e.g., soluble mask, re-deposited mask (EPO)
Patents: 19
Patent Applications: 0
- E21.038 Characterized by process involved to create mask, e.g., lift-off mask, sidewalls, or to modify mask, such as pre-treatment, post-treatment (EPO)
Patents: 268
Patent Applications: 6
- E21.039 Process specially adapted to improve the resolution of the mask (EPO)
Patents: 89
Patent Applications: 7
- E21.04 Device having at least one potential-jump barrier or surface barrier, e.g., PN junction, depletion layer, carrier concentration layer (EPO)
Patents: 12
Patent Applications: 302
- E21.041 Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (EPO)
Patents: 18
Patent Applications: 22
- E21.042 Making n- or p-doped regions (EPO)
Patents: 7
Patent Applications: 7
- E21.043 Using ion im plantation (EPO)
Patents: 23
Patent Applications: 3
- E21.044 Changing their shape, e.g., forming recess (EPO)
Patents: 5
Patent Applications: 0
- E21.045 Making electrode (EPO)
Patents: 2
Patent Applications: 2
- E21.046 Ohmic electrode (EPO)
Patents: 16
Patent Applications: 0
- E21.047 Schottky electrode (EPO)
Patents: 14
Patent Applications: 2
- E21.048 Conductor-insulator-semiconductor electrode, e.g., MIS contacts (EPO)
Patents: 6
Patent Applications: 2
- E21.049 Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (EPO)
Patents: 3
Patent Applications: 9
- E21.05 Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal devices such as source, drain, and gate terminals; emitter, base, collector terminals (EPO)
Patents: 6
Patent Applications: 2
- E21.051 Field-effect transistor (EPO)
Patents: 45
Patent Applications: 20
- E21.052 Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (EPO)
Patents: 2
Patent Applications: 1
- E21.053 Diode (EPO)
Patents: 14
Patent Applications: 3
- E21.054 Device having semiconductor body comprising silicon carbide (SiC) (EPO)
Patents: 66
Patent Applications: 38
- E21.055 Passivating silicon carbide surface (EPO)
Patents: 18
Patent Applications: 6
- E21.056 Making n- or p- doped regions or layers, e.g., using diffusion (EPO)
Patents: 14
Patent Applications: 3
- E21.057 Using ion implantation (EPO)
Patents: 36
Patent Applications: 6
- E21.058 Using masks (EPO)
Patents: 14
Patent Applications: 1
- E21.059 Angled implantation (EPO)
Patents: 3
Patent Applications: 2
- E21.06 Changing shape of semiconductor body, e.g., forming recesses (EPO)
Patents: 19
Patent Applications: 3
- E21.061 Making electrode (EPO)
Patents: 4
Patent Applications: 6
- E21.062 Ohmic electrode (EPO)
Patents: 32
Patent Applications: 7
- E21.063 Conductor-insulator-semiconductor electrode, e.g., MIS contact (EPO)
Patents: 29
Patent Applications: 1
- E21.064 Schottky electrode (EPO)
Patents: 20
Patent Applications: 7
- E21.065 Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (EPO)
Patents: 7
Patent Applications: 16
- E21.066 Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal device (EPO)
Patents: 159
Patent Applications: 26
- E21.067 Device controllable only by variation of electric current supplied or electric potential applied to one or more of the electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (EPO)
Patents: 47
Patent Applications: 2
- E21.068 Device having semiconductor body comprising selenium (Se) or tellurium (Te) (EPO)
Patents: 6
Patent Applications: 183
- E21.069 Preparation of substrate or foundation plate for Se or Te semiconductor (EPO)
Patents: 2
Patent Applications: 1
- E21.07 Preliminary treatment of Se or Te, its application to substrate, or the subsequent treatment of combination (EPO)
Patents: 3
Patent Applications: 3
- E21.071 Application of Se or Te to substrate or foundation plate (EPO)
Patents: 1
Patent Applications: 10
- E21.072 Conversion of Se or Te to conductive state (EPO)
Patents: 0
Patent Applications: 0
- E21.073 Treatment of surface of Se or Te layer after having been made conductive (EPO)
Patents: 0
Patent Applications: 0
- E21.074 Provision of discrete insulating layer, i.e., specified barrier layer material (EPO)
Patents: 0
Patent Applications: 0
- E21.075 Application of electrode to exposed surface of Se or Te after Se or Te has been applied to foundation plate (EPO)
Patents: 1
Patent Applications: 3
- E21.076 Treatment of complete device, e.g., by electroforming to form barrier (EPO)
Patents: 2
Patent Applications: 2
- E21.077 Heat treating (EPO)
Patents: 4
Patent Applications: 0
- E21.078 Device having semiconductor body comprising cuprous oxide (Cu 2 O) or cuprous iodide (CuI) (EPO)
Patents: 2
Patent Applications: 74
- E21.079 Preparation of substrate, preliminary treatment oxidation of substrate, reduction treatment (EPO)
Patents: 5
Patent Applications: 1
- E21.08 Preliminary treatment of foundation plate (EPO)
Patents: 3
Patent Applications: 0
- E21.081 Reduction of copper oxide, treatment of oxide layer (EPO)
Patents: 3
Patent Applications: 1
- E21.082 Oxidation and subsequent heat treatment of substrate (EPO)
Patents: 7
Patent Applications: 2
- E21.083 Application of specified conductive layer (EPO)
Patents: 0
Patent Applications: 0
- E21.084 Treatment of complete device, e.g., electroforming, heat treating (EPO)
Patents: 3
Patent Applications: 1
- E21.085 Device having semiconductor body comprising Group IV elements or Group III-V compounds with or without impurities, e.g., doping materials (EPO)
Patents: 8
Patent Applications: 135
- E21.086 Intermixing or interdiffusion or disordering of Group III-V heterostructures, e.g., IILD (EPO)
Patents: 35
Patent Applications: 5
- E21.087 Joining of semiconductor body for junction formation (EPO)
Patents: 16
Patent Applications: 43
- E21.088 By direct bonding (EPO)
Patents: 107
Patent Applications: 33
- E21.089 Multistep processes for manufacture of device using quantum interference effect, e.g., electrostatic Aharonov-Bohm effect (EPO)
Patents: 12
Patent Applications: 9
- E21.09 Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (EPO)
Patents: 139
Patent Applications: 2144
- E21.091 Using physical deposition, e.g., vacuum deposition, sputtering (EPO)
Patents: 64
Patent Applications: 24
- E21.092 Epitaxial deposition of Group IV element, e.g., Si, Ge (EPO)
Patents: 57
Patent Applications: 14
- E21.093 Deposition on semiconductor substrate being different from deposited semiconductor material; i.e., formation of heterojunctions (EPO)
Patents: 13
Patent Applications: 3
- E21.094 Deposition on insulating or meta llic substrate (EPO)
Patents: 18
Patent Applications: 5
- E21.095 Epitaxial deposition of diamond (EPO)
Patents: 2
Patent Applications: 0
- E21.096 Deposition of diamond (EPO)
Patents: 1
Patent Applications: 0
- E21.097 Epitaxial deposition of Group III-V compound (EPO)
Patents: 95
Patent Applications: 14
- E21.098 Deposition on semiconductor substrate not being an Group III-V compound (EPO)
Patents: 14
Patent Applications: 5
- E21.099 Deposition on insulating or metallic substrate (EPO)
Patents: 11
Patent Applications: 2
- E21.1 Doping during epitaxial deposition (EPO)
Patents: 20
Patent Applications: 1
- E21.101 Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)
Patents: 444
Patent Applications: 69
- E21.102 Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO)
Patents: 107
Patent Applications: 50
- E21.103 Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunctions (EPO)
Patents: 21
Patent Applications: 11
- E21.104 Deposition on an insulating or a metallic substrate (EPO)
Patents: 27
Patent Applications: 14
- E21.105 Epitaxial deposition of diamond (EPO)
Patents: 9
Patent Applications: 1
- E21.106 Doping during the epitaxial deposition (EPO)
Patents: 37
Patent Applications: 7
- E21.107 Deposition of diamond (EPO)
Patents: 3
Patent Applications: 1
- E21.108 Epitaxial deposition of Group III-V compound (EPO)
Patents: 144
Patent Applications: 51
- E21.109 Using molecular beam technique (EPO)
Patents: 14
Patent Applications: 3
- E21.11 Doping the epitaxial deposit (EPO)
Patents: 68
Patent Applications: 3
- E21.111 Doping with transition metals to form semi-insulating layers (EPO)
Patents: 21
Patent Applications: 1
- E21.112 Deposition on a semiconductor substrate not being Group III-V compound (EPO)
Patents: 79
Patent Applications: 14
- E21.113 Deposition on an insulating or a metallic substrate (EPO)
Patents: 51
Patent Applications: 12
- E21.114 Using liquid deposition (EPO)
Patents: 40
Patent Applications: 32
- E21.115 Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO)
Patents: 21
Patent Applications: 6
- E21.116 Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunction (EPO)
Patents: 2
Patent Applications: 2
- E21.117 Epitaxial deposition of Group III-V compound (EPO)
Patents: 111
Patent Applications: 3
- E21.118 Deposition on a semiconductor substrate not being an Group III-V compound (EPO)
Patents: 4
Patent Applications: 0
- E21.119 Characterized by the substrate (EPO)
Patents: 61
Patent Applications: 50
- E21.12 Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (EPO)
Patents: 43
Patent Applications: 10
- E21.121 Substrate is crystalline insulating material, e.g., sapphire (EPO)
Patents: 149
Patent Applications: 21
- E21.122 Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (EPO)
Patents: 354
Patent Applications: 25
- E21.123 Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (EPO)
Patents: 139
Patent Applications: 5
- E21.124 Heteroepitaxy (EPO)
Patents: 14
Patent Applications: 1
- E21.125 Defect and dislocati on suppression due to lattice mismatch, e.g., lattice adaptation (EPO)
Patents: 217
Patent Applications: 2
- E21.126 Group III-V compound on dissimilar Group III-V compound (EPO)
Patents: 69
Patent Applications: 2
- E21.127 Group III-V compound on Si or Ge (EPO)
Patents: 106
Patent Applications: 3
- E21.128 Carbon on a noncarbon semiconductor substrate (EPO)
Patents: 13
Patent Applications: 1
- E21.129 Group IVA, e.g., Si, C, Ge on Group IVB, e.g., Ti, Zr (EPO)
Patents: 41
Patent Applications: 5
- E21.13 The substrate is crystalline conducting material, e.g., metallic silicide (EPO)
Patents: 26
Patent Applications: 2
- E21.131 Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (EPO)
Patents: 448
Patent Applications: 25
- E21.132 Preparation of substrate for selective epitaxy (EPO)
Patents: 23
Patent Applications: 10
- E21.133 Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (EPO)
Patents: 529
Patent Applications: 72
- E21.134 Using a coherent energy beam, e.g., laser or electron beam (EPO)
Patents: 387
Patent Applications: 64
- E21.135 Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (EPO)
Patents: 88
Patent Applications: 236
- E21.136 From the substrate during epitaxy, e.g., autodoping; preventing or using autodoping (EPO)
Patents: 53
Patent Applications: 2
- E21.137 To control carrier lifetime, i.e., deep level dopant (EPO)
Patents: 36
Patent Applications: 1
- E21.138 In Group III-V compound (EPO)
Patents: 5
Patent Applications: 1
- E21.139 Lithium-drift (EPO)
Patents: 2
Patent Applications: 0
- E21.14 Diffusion source (EPO)
Patents: 61
Patent Applications: 2
- E21.141 Using diffusion into or out of a solid from or into a gaseous phase (EPO)
Patents: 111
Patent Applications: 6
- E21.142 Diffusion into or out of Group III-V compound (EPO)
Patents: 30
Patent Applications: 2
- E21.143 From or into plasma phase (EPO)
Patents: 79
Patent Applications: 14
- E21.144 Using diffusion into or out of a s olid from or into a solid phase, e.g., a doped oxide layer (EPO)
Patents: 22
Patent Applications: 15
- E21.145 Diffusion into or out of Group IV semiconductor (EPO)
Patents: 10
Patent Applications: 5
- E21.146 Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (EPO)
Patents: 37
Patent Applications: 2
- E21.147 By ion implantation (EPO)
Patents: 84
Patent Applications: 9
- E21.148 From or through or into an applied layer, e.g., photoresist, nitride (EPO)
Patents: 110
Patent Applications: 2
- E21.149 Applied layer is oxide, e.g., P 2 O 5 , PSG, H 3 BO 3 , doped oxide (EPO)
Patents: 168
Patent Applications: 1
- E21.15 Through the applied layer (EPO)
Patents: 37
Patent Applications: 3
- E21.151 Applied layer being silicon or silicide or SIPOS, e.g., polysilicon, porous silicon (EPO)
Patents: 294
Patent Applications: 3
- E21.152 Diffusion into or out of Group III-V compound (EPO)
Patents: 52
Patent Applications: 5
- E21.153 Using diffusion into or out of a solid from or into a liquid phase, e.g., alloy diffusion process (EPO)
Patents: 12
Patent Applications: 3
- E21.154 Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (EPO)
Patents: 106
Patent Applications: 8
- E21.155 Alloying of doping material with Group III-V compound (EPO)
Patents: 7
Patent Applications: 2
- E21.156 Alloying of electrode material (EPO)
Patents: 6
Patent Applications: 3
- E21.157 With Group III-V compound (EPO)
Patents: 5
Patent Applications: 0
- E21.158 Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (EPO)
Patents: 234
Patent Applications: 940
- E21.159 Deposition of conductive or insulating material for electrode conducting electric current (EPO)
Patents: 34
Patent Applications: 401
- E21.16 From a gas or vapor, e.g., condensation (EPO)
Patents: 24
Patent Applications: 25
- E21.161 Of conductive layer (EPO)
Patents: 15
Patent Applications: 21
- E21.162 On semiconductor body comprising Group IV element (EPO)
Patents: 272
Patent Applications: 1
- E21.163 Deposition of Schottky electrode (EPO)
Patents: 92
Patent Applications: 1
- E21.164 O layer comprising silicide (EPO)
Patents: 0
Patent Applications: 3
- E21.165 Conductive layer comprising silicide (EPO)
Patents: 933
Patent Applications: 21
- E21.166 Conductive layer comprising semiconducting material (EPO)
Patents: 570
Patent Applications: 3
- E21.167 Making of side-wall contact (EPO)
Patents: 11
Patent Applications: 0
- E21.168 Conductive layer comprising transition metal, e.g., Ti, W, Mo (EPO)
Patents: 198
Patent Applications: 10
- E21.169 By physical means, e.g., sputtering, evaporation (EPO)
Patents: 190
Patent Applications: 6
- E21.17 By chemical means, e.g., CVD, LPCVD, PECVD, laser CVD (EPO)
Patents: 415
Patent Applications: 33
- E21.171 Selective deposition (EPO)
Patents: 169
Patent Applications: 10
- E21.172 On semiconductor body comprising Group III-V compound (EPO)
Patents: 208
Patent Applications: 5
- E21.173 Deposition of Schottky electrode (EPO)
Patents: 118
Patent Applications: 2
- E21.174 From a liquid, e.g., electrolytic deposition (EPO)
Patents: 236
Patent Applications: 11
- E21.175 Using an external electrical current, i.e., electro-deposition (EPO)
Patents: 238
Patent Applications: 6
- E21.176 Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (EPO)
Patents: 12
Patent Applications: 7
- E21.177 MOS-gate structure (EPO)
Patents: 19
Patent Applications: 136
- E21.178 Joint-gate structure (EPO)
Patents: 4
Patent Applications: 0
- E21.179 Floating or plural gate structure (EPO)
Patents: 100
Patent Applications: 72
- E21.18 Gate structure with charge-trapping insulator (EPO)
Patents: 17
Patent Applications: 44
- E21.181 On semiconductor body not comprising Group IV element, e.g., Group III-V compound (EPO)
Patents: 25
Patent Applications: 1
- E21.182 On semiconductor body comprising Group IV element excluding non-elemental Si, e.g., Ge, C, diamond, silicon compound or compound, such as SiC or SiGe (EPO)
Patents: 17
Patent Applications: 4
- E21.183 For charge-coupled device (EPO)
Patents: 1
Patent Applications: 0
- E21.184 PN-homojunction gate structure (EPO)
Patents: 0
Patent Applications: 1
- E21.185 For charge-coupled device (EPO)
Patents: 6
Patent Applications: 0
- E21.186 Schottky gate structure (EPO)
Patents: 0
Patent Applications: 6
- E21.187 For charge-coupled device (EPO)
Patents: 1
Patent Applications: 1
- E21.188 Heterojunction gate structure (EPO)
Patents: 2
Patent Applications: 0
- E21.189 For charge-coupled device (EPO)
Patents: 5
Patent Applications: 0
- E21.19 Making electrode structure comprising conductor-insulator-semiconductor, e.g., MIS gate (EPO)
Patents: 88
Patent Applications: 544
- E21.191 Insulator formed on silicon semiconductor body (EPO)
Patents: 20
Patent Applications: 6
- E21.192 Characterized by insulator (EPO)
Patents: 60
Patent Applications: 44
- E21.193 On single crystalline silicon (EPO)
Patents: 676
Patent Applications: 5
- E21.194 Characterized by treatment after formation of definitive gate conductor (EPO)
Patents: 193
Patent Applications: 2
- E21.195 Characterized by conductor (EPO)
Patents: 14
Patent Applications: 7
- E21.196 Final conductor next to insulator having lateral composition or doping variation, or being formed laterally by more than one deposition step (EPO)
Patents: 87
Patent Applications: 1
- E21.197 Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (EPO)
Patents: 173
Patent Applications: 3
- E21.198 Conductor comprising at least another nonsilicon conductive layer (EPO)
Patents: 49
Patent Applications: 1
- E21.199 Conductor comprising silicide layer formed by silicidation reaction of silicon with metal layer (EPO)
Patents: 345
Patent Applications: 13
- E21.2 Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (EPO)
Patents: 356
Patent Applications: 3
- E21.201 Conductor layer next to insulator is Si or Ge or C and their non-Si alloys (EPO)
Patents: 57
Patent Applications: 1
- E21.202 Conductor layer next to the insulator is single metal, e.g., Ta, W, Mo, Al (EPO)
Patents: 81
Patent Applications: 7
- E21.203 Conductor layer next to insulator is metallic silicide (Me Si) (EPO)
Patents: 68
Patent Applications: 8
- E21.204 Conductor layer next to insulator is non-MeSi composite or compound, e.g., TiN (EPO)
Patents: 77
Patent Applications: 4
- E21.205 Characterized by sectional shape, e.g., T-shape, inverted T, spacer (EPO)
Patents: 264
Patent Applications: 4
- E21.206 Lithography, isolation, or planarization-related aspects of making conductor-insulator-semiconductor structure, e.g., sub-lithography lengths; to solve problems arising at crossing with side of device isolation (EPO)
Patents: 373
Patent Applications: 1
- E21.207 Insulator formed on nonelemental silicon semiconductor body, e.g., Ge, SiGe, SiGeC (EPO)
Patents: 22
Patent Applications: 7
- E21.208 Comprising layer having ferroelectric properties (EPO)
Patents: 87
Patent Applications: 17
- E21.209 Making electrode structure comprising conductor-insulator-conuctor-insulator-semiconductor, e.g., gate stack for non-volatile memory (EPO)
Patents: 709
Patent Applications: 146
- E21.21 Comprising charge trapping insulator (EPO)
Patents: 78
Patent Applications: 176
- E21.211 Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (EPO)
Patents: 127
Patent Applications: 827
- E21.212 Hydrogenation or deuterization, e.g., using atomic hydrogen or deuterium from a plasma (EPO)
Patents: 147
Patent Applications: 13
- E21.213 Of Group III-V compound (EPO)
Patents: 6
Patent Applications: 2
- E21.214 To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO)
Patents: 174
Patent Applications: 737
- E21.215 Chemical or electrical treatment, e.g., electrolytic etching (EPO)
Patents: 124
Patent Applications: 294
- E21.216 Electrolytic etching (EPO)
Patents: 96
Patent Applications: 2
- E21.217 Of Group III-V compound (EPO)
Patents: 38
Patent Applications: 1
- E21.218 Plasma etching; reactive-ion etching (EPO)
Patents: 471
Patent Applications: 411
- E21.219 Chemical etching (EPO)
Patents: 233
Patent Applications: 327
- E21.22 Etching of Group III-V compound (EPO)
Patents: 111
Patent Applications: 10
- E21.221 Anisotropic liquid etching (EPO)
Patents: 44
Patent Applications: 1
- E21.222 Vapor phase etching (EPO)
Patents: 123
Patent Applications: 2
- E21.223 Anisotropic liquid etching (EPO)
Patents: 200
Patent Applications: 19
- E21.224 Chemical cleaning (EPO)
Patents: 58
Patent Applications: 30
- E21.225 Cleaning diamond or graphite (EPO)
Patents: 4
Patent Applications: 0
- E21.226 Dry cleaning (EPO)
Patents: 250
Patent Applications: 7
- E21.227 With gaseous hydrogen fluoride (HF) (EPO)
Patents: 56
Patent Applications: 1
- E21.228 Wet cleaning only (EPO)
Patents: 518
Patent Applications: 27
- E21.229 Combining dry and wet cleaning steps (EPO)
Patents: 70
Patent Applications: 3
- E21.23 With simultaneous mechanical treatment, e.g., chemical-mechanical polishing (EPO)
Patents: 252
Patent Applications: 241
- E21.231 Using mask (EPO)
Patents: 121
Patent Applications: 91
- E21.232 Characterized by their composition, e.g., multilayer masks, materials (EPO)
Patents: 191
Patent Applications: 26
- E21.233 Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (EPO)
Patents: 78
Patent Applications: 5
- E21.234 Characterized by their behavior during process, e.g., soluble mask, redeposited mask (EPO)
Patents: 68
Patent Applications: 1
- E21.235 Characterized by process involved to create mask, e.g., lift-off mask, sidewall, or to modify the mask, e.g., pre-treatment, post-treatment (EPO)
Patents: 159
Patent Applications: 24
- E21.236 Process specially adapted to improve resolution of mask (EPO)
Patents: 23
Patent Applications: 4
- E21.237 Mechanical treatment, e.g., grinding, polishing, cutting (EPO)
Patents: 238
Patent Applications: 140
- E21.238 Making grooves, e.g., cutting (EPO)
Patents: 112
Patent Applications: 129
- E21.239 Using abrasion, e.g., sand-blasting (EPO)
Patents: 17
Patent Applications: 23
- E21.24 To form insulating layer thereon, e.g., for masking or by using photolithographic technique (EPO)
Patents: 27
Patent Applications: 702
- E21.241 Post-treatment (EPO)
Patents: 368
Patent Applications: 52
- E21.242 Of organic layer (EPO)
Patents: 100
Patent Applications: 17
- E21.243 Planarization of insulating layer (EPO)
Patents: 184
Patent Applications: 20
- E21.244 Involving dielectric removal step (EPO)
Patents: 576
Patent Applications: 8
- E21.245 Removal by chemical etching, e.g., dry etching (EPO)
Patents: 190
Patent Applications: 16
- E21.246 Removal by selective chemical etching, e.g., selective dry etching through mask (EPO)
Patents: 53
Patent Applications: 10
- E21.247 Doping insulating layer (EPO)
Patents: 19
Patent Applications: 22
- E21.248 By ion implantation (EPO)
Patents: 84
Patent Applications: 7
- E21.249 Etching insulating layer by chemical or physical means (EPO)
Patents: 20
Patent Applications: 399
- E21.25 Etching inorganic layer (EPO)
Patents: 52
Patent Applications: 4
- E21.251 By chemical means (EPO)
Patents: 381
Patent Applications: 15
- E21.252 By dry-etching (EPO)
Patents: 1140
Patent Applications: 22
- E21.253 Of layers not containing Si, e.g., PZT, Al 2 O 3 (EPO)
Patents: 61
Patent Applications: 1
- E21.254 Etching organic layer (EPO)
Patents: 19
Patent Applications: 2
- E21.255 By chemical means (EPO)
Patents: 161
Patent Applications: 2
- E21.256 By dry-etching (EPO)
Patents: 383
Patent Applications: 7
- E21.257 Using mask (EPO)
Patents: 453
Patent Applications: 62
- E21.258 Using masks (EPO)
Patents: 407
Patent Applications: 30
- E21.259 Organic layers, e.g., photoresist (EPO)
Patents: 402
Patent Applications: 70
- E21.26 Layer comprising organo-silicon compound (EPO)
Patents: 137
Patent Applications: 18
- E21.261 Layer comprising polysiloxane compound (EPO)
Patents: 160
Patent Applications: 3
- E21.262 Layer comprising hydrogen silsesquioxane (EPO)
Patents: 61
Patent Applications: 0
- E21.263 Layer comprising silazane compounds (EPO)
Patents: 22
Patent Applications: 3
- E21.264 Layers comprising fluoro hydrocarbon compounds, e.g., polytetrafluoroethylene (EPO)
Patents: 63
Patent Applications: 1
- E21.265 By Langmuir-Blodgett technique (EPO)
Patents: 22
Patent Applications: 0
- E21.266 Inorganic layer (EPO)
Patents: 233
Patent Applications: 46
- E21.267 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (EPO)
Patents: 37
Patent Applications: 48
- E21.268 Of silicon (EPO)
Patents: 265
Patent Applications: 20
- E21.269 Formed by deposition from a gas or vapor (EPO)
Patents: 167
Patent Applications: 19
- E21.27 Carbon layer, e.g., diamond-like layer (EPO)
Patents: 50
Patent Applications: 5
- E21.271 Composed of oxide or glassy oxide or oxide based glass (EPO)
Patents: 285
Patent Applications: 29
- E21.272 With perovskite structure (EPO)
Patents: 397
Patent Applications: 4
- E21.273 Deposition of porous oxide or porous glassy oxide or oxide based porous glass (EPO)
Patents: 182
Patent Applications: 3
- E21.274 Deposition from gas or vapor (EPO)
Patents: 282
Patent Applications: 27
- E21.275 Deposition of boron or phosphorus doped silicon oxide, e.g., BSG, PSG, BPSG (EPO)
Patents: 203
Patent Applications: 2
- E21.276 Deposition of halogen doped silicon oxide, e.g., fluorine doped silicon oxide (EPO)
Patents: 122
Patent Applications: 0
- E21.277 Deposition of carbon doped silicon oxide, e.g., SiOC (EPO)
Patents: 90
Patent Applications: 2
- E21.278 Deposition of silicon oxide (EPO)
Patents: 120
Patent Applications: 29
- E21.279 On silicon body (EPO)
Patents: 522
Patent Applications: 6
- E21.28 Deposition of aluminum oxide (EPO)
Patents: 30
Patent Applications: 3
- E21.281 On a silicon body (EPO)
Patents: 37
Patent Applications: 1
- E21.282 Formed by oxidation (EPO)
Patents: 12
Patent Applications: 17
- E21.283 Of semiconductor material, e.g., by oxidation of semiconductor body itself (EPO)
Patents: 67
Patent Applications: 23
- E21.284 By thermal oxidation (EPO)
Patents: 36
Patent Applications: 5
- E21.285 Of silicon (EPO)
Patents: 331
Patent Applications: 18
- E21.286 Of Group III-V compound (EPO)
Patents: 24
Patent Applications: 1
- E21.287 By anodic oxidation (EPO)
Patents: 6
Patent Applications: 0
- E21.288 Of silicon (EPO)
Patents: 33
Patent Applications: 0
- E21.289 Of Group III-V compound (EPO)
Patents: 22
Patent Applications: 0
- E21.29 Of metallic layer, e.g., Al deposited on body, e.g., formation of multi-layer insulating structures (EPO)
Patents: 111
Patent Applications: 5
- E21.291 By anodic oxidation (EPO)
Patents: 58
Patent Applications: 0
- E21.292 Inorganic layer composed of nitride (EPO)
Patents: 94
Patent Applications: 17
- E21.293 Of silicon nitride (EPO)
Patents: 407
Patent Applications: 53
- E21.294 Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (EPO)
Patents: 24
Patent Applications: 446
- E21.295 Deposition of layer comprising metal, e.g., metal, alloys, metal compounds (EPO)
Patents: 302
Patent Applications: 235
- E21.296 Of metal-silicide layer (EPO)
Patents: 108
Patent Applications: 59
- E21.297 Deposition of semiconductive layer, e.g., poly - or amorphous silicon layer (EPO)
Patents: 72
Patent Applications: 10
- E21.298 Deposition of superconductive layer (EPO)
Patents: 5
Patent Applications: 0
- E21.299 Deposition of conductive or semi-conductive organic layer (EPO)
Patents: 12
Patent Applications: 7
- E21.3 Post treatment (EPO)
Patents: 242
Patent Applications: 14
- E21.301 Oxidation of silicon-containing layer (EPO)
Patents: 133
Patent Applications: 4
- E21.302 Nitriding of silicon-containing layer (EPO)
Patents: 49
Patent Applications: 4
- E21.303 Planarization (EPO)
Patents: 74
Patent Applications: 4
- E21.304 By chemical mechanical polishing (CMP) (EPO)
Patents: 548
Patent Applications: 21
- E21.305 Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (EPO)
Patents: 40
Patent Applications: 22
- E21.306 By physical means only (EPO)
Patents: 42
Patent Applications: 0
- E21.307 Of silicon-containing layer (EPO)
Patents: 15
Patent Applications: 1
- E21.308 By chemical means only (EPO)
Patents: 9
Patent Applications: 2
- E21.309 By liquid etching only (EPO)
Patents: 343
Patent Applications: 5
- E21.31 By vapor etching only (EPO)
Patents: 79
Patent Applications: 5
- E21.311 Using plasma (EPO)
Patents: 552
Patent Applications: 13
- E21.312 Of silicon-containing layer (EPO)
Patents: 479
Patent Applications: 1
- E21.313 Pre- or post-treatment, e.g., anti-corrosion process (EPO)
Patents: 285
Patent Applications: 1
- E21.314 Using mask (EPO)
Patents: 466
Patent Applications: 5
- E21.315 Doping layer (EPO)
Patents: 18
Patent Applications: 0
- E21.316 Doping polycrystalline or amorphous silicon layer (EPO)
Patents: 192
Patent Applications: 4
- E21.317 To modify their internal properties, e.g., to produce internal imperfections (EPO)
Patents: 7
Patent Applications: 59
- E21.318 Of silicon body, e.g., for gettering (EPO)
Patents: 249
Patent Applications: 78
- E21.319 Using cavities formed by inert gas ion implantation, e.g., hydrogen, noble gas (EPO)
Patents: 23
Patent Applications: 6
- E21.32 Of silicon on insulator (SOI) (EPO)
Patents: 132
Patent Applications: 8
- E21.321 Thermally inducing defects using oxygen present in silicon body for intrinsic gettering (EPO)
Patents: 154
Patent Applications: 11
- E21.322 Of Group III-V compound, e.g., to make them semi-insulating (EPO)
Patents: 14
Patent Applications: 3
- E21.323 Of diamond body (EPO)
Patents: 0
Patent Applications: 2
- E21.324 Thermal treatment for modifying the properties of semiconductor body, e.g., annealing, sintering (EPO)
Patents: 290
Patent Applications: 22
- E21.325 For the formation of PN junction without ad dition of impurities (EPO)
Patents: 2
Patent Applications: 1
- E21.326 Of Group III-V compound (EPO)
Patents: 107
Patent Applications: 1
- E21.327 Application of electric current or field, e.g., for electroforming (EPO)
Patents: 41
Patent Applications: 49
- E21.328 Radiation treatment (EPO)
Patents: 22
Patent Applications: 219
- E21.329 Using natural radiation, e.g., alpha , beta or gamma radiation (EPO)
Patents: 1
Patent Applications: 0
- E21.33 To produce chemical element by transmutation (EPO)
Patents: 24
Patent Applications: 0
- E21.331 With high-energy radiation (EPO)
Patents: 69
Patent Applications: 20
- E21.332 For etching, e.g., sputter etching (EPO)
Patents: 51
Patent Applications: 2
- E21.333 For heating, e.g., electron beam heating (EPO)
Patents: 60
Patent Applications: 32
- E21.334 Producing ions for implantation (EPO)
Patents: 89
Patent Applications: 262
- E21.335 In Group IV semiconductor (EPO)
Patents: 390
Patent Applications: 18
- E21.336 Of electrically active species (EPO)
Patents: 326
Patent Applications: 22
- E21.337 Through-implantation (EPO)
Patents: 317
Patent Applications: 4
- E21.338 Recoil-implantation (EPO)
Patents: 15
Patent Applications: 1
- E21.339 Of electrically inactive species in silicon to make buried insulating layer (EPO)
Patents: 77
Patent Applications: 4
- E21.34 In Group III-V compound (EPO)
Patents: 63
Patent Applications: 4
- E21.341 Of electrically active species (EPO)
Patents: 63
Patent Applications: 1
- E21.342 Through-implantation (EPO)
Patents: 18
Patent Applications: 1
- E21.343 Characterized by the implantation of both electrically active and inactive species in the same semiconductor region to be doped (EPO)
Patents: 23
Patent Applications: 0
- E21.344 In diamond (EPO)
Patents: 0
Patent Applications: 0
- E21.345 Characterized by the angle between the ion beam and the crystal planes or the main crystal surface (EPO)
Patents: 335
Patent Applications: 20
- E21.346 Using mask (EPO)
Patents: 382
Patent Applications: 46
- E21.347 Using electromagnetic radiation, e.g., laser radiation (EPO)
Patents: 403
Patent Applications: 152
- E21.348 Using X-ray laser (EPO)
Patents: 2
Patent Applications: 1
- E21.349 Using incoherent radiation (EPO)
Patents: 58
Patent Applications: 10
- E21.35 Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (EPO)
Patents: 16
Patent Applications: 21
- E21.351 Device comprising one or two electrodes, e.g., diode, resistor or capacitor with PN or Schottky junctions (EPO)
Patents: 13
Patent Applications: 14
- E21.352 Diode (EPO)
Patents: 59
Patent Applications: 77
- E21.353 Tunnel diode (EPO)
Patents: 13
Patent Applications: 11
- E21.354 Transit time diode, e.g., IMPATT, TRAPATT diode (EPO)
Patents: 1
Patent Applications: 0
- E21.355 Break-down diode, e.g., Zener diode, avalanche diode (EPO)
Patents: 6
Patent Applications: 6
- E21.356 Zener diode (EPO)
Patents: 26
Patent Applications: 9
- E21.357 Avalanche diode (EPO)
Patents: 8
Patent Applications: 4
- E21.358 Rectifier diode (EPO)
Patents: 72
Patent Applications: 1
- E21.359 Schottky diode (EPO)
Patents: 51
Patent Applications: 65
- E21.36 Planar diode (EPO)
Patents: 10
Patent Applications: 1
- E21.361 Multi-layer diode, e.g., PNPN or NPNP diode (EPO)
Patents: 9
Patent Applications: 4
- E21.362 Gat ed-diode structure, e.g., SITh, FCTh, FCD (EPO)
Patents: 25
Patent Applications: 6
- E21.363 Resistor with PN junction (EPO)
Patents: 35
Patent Applications: 3
- E21.364 Capacitor with PN - or Schottky junction, e.g., varactor (EPO)
Patents: 17
Patent Applications: 17
- E21.365 Active layer is Group III-V compound (EPO)
Patents: 5
Patent Applications: 2
- E21.366 Diode (EPO)
Patents: 12
Patent Applications: 4
- E21.367 With an heterojunction, e.g., resonant tunneling diodes (RTD) (EPO)
Patents: 4
Patent Applications: 2
- E21.368 Schottky diode (EPO)
Patents: 29
Patent Applications: 1
- E21.369 Device comprising three or more electrodes (EPO)
Patents: 2
Patent Applications: 5
- E21.37 Transistor (EPO)
Patents: 17
Patent Applications: 92
- E21.371 Heterojunction transistor (EPO)
Patents: 221
Patent Applications: 68
- E21.372 Bipolar thin film transistor (EPO)
Patents: 76
Patent Applications: 19
- E21.373 Lateral transistor (EPO)
Patents: 64
Patent Applications: 7
- E21.374 Schottky transistor (EPO)
Patents: 0
Patent Applications: 1
- E21.375 Silicon vertical transistor (EPO)
Patents: 531
Patent Applications: 12
- E21.376 Planar transistor (EPO)
Patents: 1
Patent Applications: 0
- E21.377 Mesa-planar transistor (EPO)
Patents: 4
Patent Applications: 1
- E21.378 Inverse transistor (EPO)
Patents: 7
Patent Applications: 0
- E21.379 With single crystalline emitter, collector or base including extrinsic, link or graft base formed on th e silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (EPO)
Patents: 160
Patent Applications: 1
- E21.38 Where main current goes through whole of silicon substrate, e.g., power bipolar transistor (EPO)
Patents: 31
Patent Applications: 0
- E21.381 With a multi- emitter, e.g., interdigitated, multicellular, distributed (EPO)
Patents: 37
Patent Applications: 0
- E21.382 Field-effect controlled bipolar-type transi stor, e.g., insulated gate bipolar transistor (IGBT) (EPO)
Patents: 30
Patent Applications: 63
- E21.383 Vertical insulated gate bipolar transistor (EPO)
Patents: 128
Patent Applications: 24
- E21.384 With recessed gate (EPO)
Patents: 113
Patent Applications: 27
- E21.385 With recess formed by etching in source/emitter contact region (EPO)
Patents: 25
Patent Applications: 2
- E21.386 Active layer, e.g., base, is Group III-V compound (EPO)
Patents: 2
Patent Applications: 0
- E21.387 Heterojunction transistor (EPO)
Patents: 257
Patent Applications: 2
- E21.388 Thyristor (EPO)
Patents: 43
Patent Applications: 49
- E21.389 Lateral or planar thyristor (EPO)
Patents: 6
Patent Applications: 2
- E21.39 Structurally associated with other devices (EPO)
Patents: 8
Patent Applications: 3
- E21.391 Other device being a controlling device of the field-effect-type (EPO)
Patents: 26
Patent Applications: 1
- E21.392 Bi-directional thyristor (EPO)
Patents: 4
Patent Applications: 5
- E21.393 Active layer is Group III-V compound (EPO)
Patents: 0
Patent Applications: 0
- E21.394 Multi-step process for the manufacture of unipolar device (EPO)
Patents: 2
Patent Applications: 2
- E21.395 Transistor-like structure, e.g., hot electron transistor (HET); metal base transistor (MBT); resonant tunneling HET (RHET); resonant tunneling transistor (RTT ); bulk barrier transistor (BBT); planar doped barrier transistor (PDBT); charge injection transistor (CHINT); ballistic transistor (EPO)
Patents: 17
Patent Applications: 8
- E21.396 Metal-insulator-semiconductor capacitor, e.g., trench capacitor (EPO)
Patents: 269
Patent Applications: 23
- E21.397 Comprising PN junction, e.g., hybrid capacitor (EPO)
Patents: 2
Patent Applications: 0
- E21.398 Active layer is Group III-V compound (EPO)
Patents: 0
Patent Applications: 5
- E21.399 Transistor-like structure, e.g., hot electron transistor (HET), metal base transistor (MBT), resonant tunneling hot electron transistor (RHET), resonant tunneling transistor (RTT), bulk barrier transistor (BBT), planar doped barrier transistor (PDBT), charge injection transistor (CHINT) (EPO)
Patents: 15
Patent Applications: 2
- E21.4 Field-effect transistor (EPO)
Patents: 15
Patent Applications: 81
- E21.401 Using static field induced region, e.g., SIT, PBT (EPO)
Patents: 50
Patent Applications: 1
- E21.402 Permeable base transistor (PBT) (EPO)
Patents: 16
Patent Applications: 0
- E21.403 With heterojunction interface channel or gate, e.g., HFET, HIGFET, SISFET, HJFET, HEMT (EPO)
Patents: 27
Patent Applications: 254
- E21.404 With one or zero or quasi-one or quasi-zero dimensional charge carrier gas channel, e.g., quantum wire FET; single electron trans istor (SET); striped channel transistor; coulomb blockade device (EPO)
Patents: 53
Patent Applications: 14
- E21.405 Active layer is Group III-V compound, e.g., III-V velocity modulation transistor (VMT), NERFET (EPO)
Patents: 12
Patent Applications: 3
- E21.406 Using static field induced region, e.g., SIT, PBT (EPO)
Patents: 22
Patent Applications: 0
- E21.407 With an heterojunction interface channel or gate, e.g., HFET, HIGFET, SI SFET, HJFET, HEMT (EPO)
Patents: 250
Patent Applications: 14
- E21.408 With one or zero or quasi-one or quasi-zero dimensional channel, e.g., in plane gate transistor (IPG), single electron transistor (SET), striped channel transistor, coulomb blockade device (EPO)
Patents: 41
Patent Applications: 0
- E21.409 With an insulated gate (EPO)
Patents: 92
Patent Applications: 2205
- E21.41 Vertical transistor (EPO)
Patents: 155
Patent Applications: 683
- E21.411 Thin film unipolar transistor (EPO)
Patents: 79
Patent Applications: 559
- E21.412 Amorphous silicon or polysilicon transistor (EPO)
Patents: 158
Patent Applications: 147
- E21.413 Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO)
Patents: 1025
Patent Applications: 93
- E21.414 Lateral single gate single channel transistor with inverted structure, i.e., channel layer is formed after gate (EPO)
Patents: 672
Patent Applications: 333
- E21.415 Monocrystalline silicon transistor on insulating substrate, e.g., quartz substrate (EPO)
Patents: 487
Patent Applications: 121
- E21.416 On sapphire substrate, e.g., silicon on sapphire (SOS) transistor (EPO)
Patents: 25
Patent Applications: 1
- E21.417 With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., DMOS transistor (EPO)
Patents: 112
Patent Applications: 201
- E21.418 Vertical power DMOS transistor (EPO)
Patents: 276
Patent Applications: 26
- E21.419 With recessed gate (EPO)
Patents: 282
Patent Applications: 34
- E21.42 With recess formed by etching in source/base contact region (EPO)
Patents: 81
Patent Applications: 1
- E21.421 With multiple gate, one gate having MOS structure and others having same or a different structure, i.e., non MOS, e.g., JFET gate (EPO)
Patents: 59
Patent Applications: 156
- E21.422 With floating gate (EPO)
Patents: 674
Patent Applications: 391
- E21.423 With charge trapping gate insulator, e.g., MNOS transistor (EPO)
Patents: 88
Patent Applications: 326
- E21.424 Lateral single gate silicon transistor (EPO)
Patents: 51
Patent Applications: 34
- E21.425 With source or drain region formed by Schottky barrier or conductor-insulator-semiconductor structure (EPO)
Patents: 29
Patent Applications: 3
- E21.426 With single crystalline channel formed on the silicon substrate after insulating device isolation (EPO)
Patents: 91
Patent Applications: 5
- E21.427 With asymmetry in channel direction, e.g., high-voltage lateral transistor with channel containing layer, e.g., p-base (EPO)
Patents: 430
Patent Applications: 10
- E21.428 With a recessed gate, e.g., lateral U-MOS (EPO)
Patents: 74
Patent Applications: 10
- E21.429 Using etching to form recess at gate location (EPO)
Patents: 179
Patent Applications: 14
- E21.43 Recessing gate by adding semiconductor material at source (S) or drain (D) location, e.g., transist or with elevated single crystal S and D (EPO)
Patents: 218
Patent Applications: 4
- E21.431 With source and drain recessed by etching or recessed and refi lled (EPO)
Patents: 155
Patent Applications: 64
- E21.432 With source and drain contacts formation strictly before final gate formation, e.g., contact first technology (EPO)
Patents: 102
Patent Applications: 4
- E21.433 Where the source and drain or source and drain extensions are self-aligned to sides of gate (EPO)
Patents: 544
Patent Applications: 42
- E21.434 With initial gate mask or masking layer complementary to prospective gate location, e.g., with dummy source and drain contacts (EPO)
Patents: 217
Patent Applications: 2
- E21.435 Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO)
Patents: 1081
Patent Applications: 34
- E21.436 Gate comprising layer with ferroelectric properties (EPO)
Patents: 16
Patent Applications: 7
- E21.437 With lightly doped drain selectively formed at side of gate (EPO)
Patents: 137
Patent Applications: 126
- E21.438 Using self-aligned silicidation, i.e., salicide (EPO)
Patents: 547
Patent Applications: 41
- E21.439 Providing different silicide thicknesses on gate and on source or drain (EPO)
Patents: 56
Patent Applications: 5
- E21.44 Using self-aligned selective metal deposition simultaneously on gate and on source or drain (EPO)
Patents: 29
Patent Applications: 3
- E21.441 Active layer is Group III-V compound (EPO)
Patents: 48
Patent Applications: 15
- E21.442 With gate at side of channel (EPO)
Patents: 100
Patent Applications: 8
- E21.443 Using self-aligned punch through stopper or threshold implant under gate region (EPO)
Patents: 119
Patent Applications: 8
- E21.444 Using dummy gate wherein at least part of final gate is self-aligned to dummy gate (EPO)
Patents: 282
Patent Applications: 10
- E21.445 With PN junction or heterojunction gate (EPO)
Patents: 6
Patent Applications: 58
- E21.446 With PN homojunction gate (EPO)
Patents: 32
Patent Applications: 25
- E21.447 Vertical transistor, e.g., tecnetrons (EPO)
Patents: 16
Patent Applications: 11
- E21.448 With heterojunction gate (EPO)
Patents: 18
Patent Applications: 9
- E21.449 Active layer is Group III-V compound (EPO)
Patents: 56
Patent Applications: 3
- E21.45 With Schottky gate, e.g., MESFET (EPO)
Patents: 45
Patent Applications: 35
- E21.451 Active layer being Group III-V compound (EPO)
Patents: 21
Patent Applications: 7
- E21.452 Lateral single-gate transistors (EPO)
Patents: 221
Patent Applications: 5
- E21.453 Process wherein final gate is made after formation of source and drain regions in active layer, e.g., dummy-gate process (EPO)
Patents: 101
Patent Applications: 0
- E21.454 Process wherein final gate is made before formation, e.g., activation anneal, of source and drain regions in active layer (EPO)
Patents: 111
Patent Applications: 1
- E21.455 Lateral transistor with two or more independen t gates (EPO)
Patents: 14
Patent Applications: 0
- E21.456 Charge transfer device (EPO)
Patents: 6
Patent Applications: 10
- E21.457 With insulated gate (EPO)
Patents: 133
Patent Applications: 5
- E21.458 With Schottky gate (EPO)
Patents: 3
Patent Applications: 1
- E21.459 Device having semiconductor body other than carbon, Si, Ge, SiC, Se, Te, Cu 2 O, CuI, and Group III-V compounds with or without impurities, e.g., doping materials (EPO)
Patents: 5
Patent Applications: 97
- E21.46 Multistep process (EPO)
Patents: 14
Patent Applications: 126
- E21.461 Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)
Patents: 74
Patent Applications: 231
- E21.462 Using physical deposition, e.g., vacuum deposition, sputtering (EPO)
Patents: 88
Patent Applications: 19
- E21.463 Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)
Patents: 71
Patent Applications: 34
- E21.464 Using liquid deposition (EPO)
Patents: 47
Patent Applications: 10
- E21.465 From molten solution of compound or alloy, e.g., liquid phase epitaxy (EPO)
Patents: 29
Patent Applications: 0
- E21.466 Diffusion of impurity material, e.g., dopant, electrode material, into or out of semiconductor body, or between semiconductor regions (EPO)
Patents: 12
Patent Applications: 28
- E21.467 Using diffusion into or out of solid from or into gaseous phase (EPO)
Patents: 15
Patent Applications: 4
- E21.468 Using diffusion into or out of solid from or into solid phase, e.g., doped oxide layer (EPO)
Patents: 13
Patent Applications: 4
- E21.469 Using diffusion into or out of solid from or into liquid phase, e.g., alloy diffusion process (EPO)
Patents: 8
Patent Applications: 1
- E21.47 Alloying of impurity material, e.g., dopant, electrode material, with semiconductor body (EPO)
Patents: 13
Patent Applications: 4
- E21.471 Radiation treatment (EPO)
Patents: 2
Patent Applications: 11
- E21.472 With high-energy radiation (EPO)
Patents: 7
Patent Applications: 4
- E21.473 Producing ion implantation (EPO)
Patents: 16
Patent Applications: 153
- E21.474 Using mask (EPO)
Patents: 1
Patent Applications: 17
- E21.475 Using electromagnetic radiation, e.g., laser radiation (EPO)
Patents: 21
Patent Applications: 24
- E21.476 Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (EPO)
Patents: 22
Patent Applications: 950
- E21.477 Deposition of conductive or insulating materials for electrode (EPO)
Patents: 21
Patent Applications: 155
- E21.478 From gas or vapor, e.g., condensation (EPO)
Patents: 30
Patent Applications: 41
- E21.479 From liquid, e.g., electrolytic deposition (EPO)
Patents: 18
Patent Applications: 14
- E21.48 Involving application of pressure, e.g., thermo compression bonding (EPO)
Patents: 5
Patent Applications: 3
- E21.481 Including application of mechanical vibration, e.g., ultrasonic vibration (EPO)
Patents: 1
Patent Applications: 1
- E21.482 Treatment of semiconductor body using process other than electromagnetic radiation (EPO)
Patents: 3
Patent Applications: 112
- E21.483 To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO)
Patents: 16
Patent Applications: 102
- E21.484 Mechanical treatment, e.g., grinding, ultrasonic treatment (EPO)
Patents: 9
Patent Applications: 22
- E21.485 Chemical or electrical treatment, e.g., electrolytic etching (EPO)
Patents: 81
Patent Applications: 178
- E21.486 Using mask (EPO)
Patents: 17
Patent Applications: 55
- E21.487 To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; post treatment of these layers (EPO)
Patents: 9
Patent Applications: 92
- E21.488 Using mask (EPO)
Patents: 2
Patent Applications: 8
- E21.489 Post treatment of insulating layer (EPO)
Patents: 7
Patent Applications: 10
- E21.49 Etching layer (EPO)
Patents: 11
Patent Applications: 8
- E21.491 Doping layer (EPO)
Patents: 0
Patent Applications: 0
- E21.492 Organic layer, e.g., photoresist (EPO)
Patents: 6
Patent Applications: 20
- E21.493 Inorganic layer (EPO)
Patents: 25
Patent Applications: 11
- E21.494 Composed of oxide or glassy oxide or oxide-based glass (EPO)
Patents: 34
Patent Applications: 10
- E21.495 Deposition of noninsulating, e.g., conductive -, resistive -, layer on insulating layer (EPO)
Patents: 11
Patent Applications: 743
- E21.496 Post treatment of layer (EPO)
Patents: 6
Patent Applications: 32
- E21.497 Thermal treatment for modifying property of semiconductor body, e.g., annealing, sintering (EPO)
Patents: 33
Patent Applications: 40
- E21.498 Application of electric current or fields, e.g., for electroforming (EPO)
Patents: 7
Patent Applications: 13
- E21.499 Assembling semiconductor devices, e.g., packaging , including mounting, encapsulating, or treatment of packaged semiconductor (EPO)
Patents: 416
Patent Applications: 2058
- E21.5 Mounting semiconductor bodies in container (EPO)
Patents: 49
Patent Applications: 99
- E21.501 Providing fillings in container, e.g., gas fillings (EPO)
Patents: 17
Patent Applications: 18
- E21.502 Encapsulation, e.g., encapsulation layer, coating (EPO)
Patents: 523
Patent Applications: 1238
- E21.503 Encapsulation of active face of flip chip device, e.g., under filling or under encapsulation of flip-chip, encapsulation perform on chip or mounting substrate (EPO)
Patents: 930
Patent Applications: 93
- E21.504 Moulds (EPO)
Patents: 797
Patent Applications: 75
- E21.505 Insulative mounting semiconductor device on support (EPO)
Patents: 531
Patent Applications: 429
- E21.506 Attaching or detaching leads or other conductive members, to be used for carrying current to or from device in operation (EPO)
Patents: 61
Patent Applications: 757
- E21.507 Formation of contacts to semiconductor by use of metal layers separated by insulating layers, e.g., self-aligned contacts to source/drain or emitter/base (EPO)
Patents: 951
Patent Applications: 68
- E21.508 Forming solder bumps (EPO)
Patents: 1140
Patent Applications: 138
- E21.509 Involving soldering or alloying process, e.g., soldering wires (EPO)
Patents: 184
Patent Applications: 287
- E21.51 Mounting on metallic conductive member (EPO)
Patents: 151
Patent Applications: 85
- E21.511 Mounting on insulating member provided with metallic leads, e.g., flip-chip mounting, conductive die mounting (EPO)
Patents: 1179
Patent Applications: 205
- E21.512 Right-up bonding (EPO)
Patents: 392
Patent Applications: 18
- E21.513 Mounting on semiconductor conductive member (EPO)
Patents: 22
Patent Applications: 7
- E21.514 Involving use of conductive adhesive (EPO)
Patents: 331
Patent Applications: 26
- E21.515 Involving use of mechanical auxiliary part without use of alloying or soldering process, e.g., pressure contacts (EPO)
Patents: 13
Patent Applications: 3
- E21.516 Involving automation techniques using film carriers (EPO)
Patents: 196
Patent Applications: 2
- E21.517 Involving use of electron or laser beam (EPO)
Patents: 53
Patent Applications: 12
- E21.518 Involving application of mechanical vibration, e.g., ultrasonic vibration (EPO)
Patents: 308
Patent Applications: 14
- E21.519 Involving application of pressure, e.g., thermo-compression bonding (EPO)
Patents: 244
Patent Applications: 22
- E21.52 Devices having no potential-jump barrier or surface barrier (EPO)
Patents: 5
Patent Applications: 88
- E21.521 Testing or measuring during manufacture or treatment or reliability measurement, i.e., testing of parts followed by no processing which modifies parts as such (EPO)
Patents: 100
Patent Applications: 294
- E21.522 Structural arrangement (EPO)
Patents: 23
Patent Applications: 28
- E21.523 Additional lead-in metallization on device, e.g., additional pads or lands, lines in scribe line, sacrificed conductors, sacrificed frames (EPO)
Patents: 16
Patent Applications: 19
- E21.524 Circuit for characterizing or monitoring manufacturing process, e.g., whole test die, wafer filled with test structures, onboard devices incorporated on each die, process/product control monitors or PCM, devices in scribe-line/kerf, drop-in devices (EPO)
Patents: 23
Patent Applications: 7
- E21.525 Procedures, i.e., sequence of activities consisting of plurality of measurement and correction, marking or sorting steps (EPO)
Patents: 695
Patent Applications: 74
- E21.526 Connection or disconnection of subentities or redundant parts of device in response to measurement, e.g., wafer scale, memory devices (EPO)
Patents: 136
Patent Applications: 14
- E21.527 Optical enhancement of defects or not directly visible states, e.g., selective electrolytic deposition, bubbles in liquids, light emission, color change (EPO)
Patents: 62
Patent Applications: 6
- E21.528 Acting in response to ongoing measurement without interruption of processing, e.g., endpoint detection, in-situ thickness measurement (EPO)
Patents: 292
Patent Applications: 84
- E21.529 Measuring as part of manufacturing process (EPO)
Patents: 25
Patent Applications: 223
- E21.53 For structural parameters, e.g., thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (EPO)
Patents: 555
Patent Applications: 347
- E21.531 For electrical parameters, e.g., resistance, deep-levels, CV, diffusions by electrical means (EPO)
Patents: 160
Patent Applications: 249
- E21.532 Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (EPO)
Patents: 19
Patent Applications: 162
- E21.533 Of thick- or thin-film circuits or parts thereof (EPO)
Patents: 28
Patent Applications: 9
- E21.534 Of thick-film circuits or parts thereof (EPO)
Patents: 46
Patent Applications: 1
- E21.535 Of thin-film circuits or parts thereof (EPO)
Patents: 36
Patent Applications: 202
- E21.536 Manufacture of specific parts of devices (EPO)
Patents: 8
Patent Applications: 227
- E21.537 Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (EPO)
Patents: 302
Patent Applications: 6
- E21.538 Making of internal connections, substrate contacts (EPO)
Patents: 371
Patent Applications: 14
- E21.539 For Group III-V compound semiconductor integrated circuits (EPO)
Patents: 6
Patent Applications: 0
- E21.54 Making of isolation regions between components (EPO)
Patents: 139
Patent Applications: 315
- E21.541 Between components manufactured in active substrate comprising SiC compound semiconductor (EPO)
Patents: 16
Patent Applications: 2
- E21.542 Between components manufactured in active substrate comprising Group III-V compound semiconductor (EPO)
Patents: 111
Patent Applications: 2
- E21.543 Between components manufactured in active substrate comprising Group II-VI compound semiconductor (EPO)
Patents: 0
Patent Applications: 3
- E21.544 PN junction isolation (EPO)
Patents: 405
Patent Applications: 37
- E21.545 Dielectric regions, e.g., EPIC dielectric isolation, LOCOS; trench refilling techniques, SOI technology, use of channel stoppers (EPO)
Patents: 252
Patent Applications: 160
- E21.546 Using trench refilling with dielectric materials (EPO)
Patents: 856
Patent Applications: 568
- E21.547 Dielectric material being obtained by full chemical transformation of nondielectric materials, such as polycrystalline silicon, metals (EPO)
Patents: 73
Patent Applications: 10
- E21.548 Concurrent filling of plurality of trenches having different trench shape or dimension, e.g., rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches (EPO)
Patents: 451
Patent Applications: 23
- E21.549 Of trenches having shape other than rectangular or V shape, e.g., rounded corners, oblique or rounded trench walls (EPO)
Patents: 415
Patent Applications: 10
- E21.55 Trench shape altered by local oxidation of silicon process step, e.g., trench corner rounding by LOCOS (EPO)
Patents: 157
Patent Applications: 2
- E21.551 Introducing impurities in trench side or bottom walls, e.g., for forming channel stoppers or alter isolation behavior (EPO)
Patents: 268
Patent Applications: 21
- E21.552 Using local oxidation of silicon, e.g., LOCOS, SWAMI, SILO (EPO)
Patents: 486
Patent Applications: 16
- E21.553 In region recessed from surface, e.g., in recess, groove, tub or trench region (EPO)
Patents: 169
Patent Applications: 22
- E21.554 Using auxiliary pillars in recessed region, e.g., to form LOCOS over extended areas (EPO)
Patents: 29
Patent Applications: 0
- E21.555 Recessed region having shape other than rectangular, e.g., rounded or oblique shape (EPO)
Patents: 81
Patent Applications: 0
- E21.556 Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter LOCOS oxide growth characteristics or for additional isolation purpose (EPO)
Patents: 105
Patent Applications: 4
- E21.557 Introducing electrical active impurities in local oxidation region solely for forming channel stoppers (EPO)
Patents: 220
Patent Applications: 2
- E21.558 Introducing both types of electrical active impurities in local oxidation region solely for forming channel stoppers, e.g., for isolation of complementary doped regions (EPO)
Patents: 94
Patent Applications: 1
- E21.559 With plurality of successive local oxidation steps (EPO)
Patents: 80
Patent Applications: 1
- E21.56 Dielectric isolation using EPIC technique, i.e., epitaxial passivated integrated circuit (EPO)
Patents: 163
Patent Applications: 1
- E21.561 Using semiconductor or insulator technology, i.e., SOI technology (EPO)
Patents: 161
Patent Applications: 104
- E21.562 Using selective deposition of single crystal silicon, e.g., Selective Epitaxial Growth (SEG) (EPO)
Patents: 31
Patent Applications: 2
- E21.563 Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO)
Patents: 120
Patent Applications: 13
- E21.564 SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO)
Patents: 652
Patent Applications: 20
- E21.565 Using full isolation by porous oxide silicon, i.e., FIPOS technique (EPO)
Patents: 26
Patent Applications: 3
- E21.566 Using lateral overgrowth technique, i.e., ELO techniques (EPO)
Patents: 52
Patent Applications: 2
- E21.567 Using bonding technique (EPO)
Patents: 304
Patent Applications: 102
- E21.568 With separation/delamination along ion implanted layer, e.g., "Smart-cut", "Unibond" (EPO)
Patents: 148
Patent Applications: 237
- E21.569 Using silicon etch back technique, e.g., BESOI, ELTRAN (EPO)
Patents: 73
Patent Applications: 4
- E21.57 With separation/delamination along porous layer (EPO)
Patents: 87
Patent Applications: 4
- E21.571 Using selective deposition of single crystal silicon, i.e., SEG technique (EPO)
Patents: 76
Patent Applications: 1
- E21.572 Polycrystalline semiconductor regions (EPO)
Patents: 437
Patent Applications: 7
- E21.573 Air gaps (EPO)
Patents: 217
Patent Applications: 55
- E21.574 Isolation by field effect (EPO)
Patents: 113
Patent Applications: 2
- E21.575 Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (EPO)
Patents: 455
Patent Applications: 576
- E21.576 Characterized by formation and post treatment of dielectrics, e.g., planarizing (EPO)
Patents: 1179
Patent Applications: 92
- E21.577 By forming via holes (EPO)
Patents: 1243
Patent Applications: 218
- E21.578 Tapered via holes (EPO)
Patents: 310
Patent Applications: 21
- E21.579 For "dual damascene" type structures (EPO)
Patents: 770
Patent Applications: 69
- E21.58 Planarizing dielectric (EPO)
Patents: 455
Patent Applications: 7
- E21.581 Dielectric comprising air gaps (EPO)
Patents: 251
Patent Applications: 14
- E21.582 Characterized by formation and post treatment of conductors, e.g., patterning (EPO)
Patents: 868
Patent Applications: 61
- E21.583 Planarization; smoothing (EPO)
Patents: 446
Patent Applications: 24
- E21.584 Barrier, adhesion or liner layer (EPO)
Patents: 1595
Patent Applications: 440
- E21.585 Filling of holes, grooves, vias or trenches with conductive material (EPO)
Patents: 1174
Patent Applications: 518
- E21.586 By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (EPO)
Patents: 402
Patent Applications: 110
- E21.587 By deposition over sacrificial masking layer, e.g., lift-off (EPO)
Patents: 114
Patent Applications: 6
- E21.588 Reflowing or applying pressure to fill contact hole, e.g., to remove voids (EPO)
Patents: 160
Patent Applications: 6
- E21.589 By forming conductive members before deposition of protective insulating material, e.g., pillars, studs (EPO)
Patents: 430
Patent Applications: 98
- E21.59 Local interconnects; local pads (EPO)
Patents: 679
Patent Applications: 114
- E21.591 Modifying pattern or conductivity of conductive members, e.g., formation of alloys, reduction of contact resistances (EPO)
Patents: 218
Patent Applications: 27
- E21.592 By altering solid-state characteristics of conductive members, e.g., fuses, in situ oxidation, laser melting (EPO)
Patents: 275
Patent Applications: 75
- E21.593 By forming silicide of refractory metal (EPO)
Patents: 245
Patent Applications: 10
- E21.594 By using super-conducting material (EPO)
Patents: 15
Patent Applications: 0
- E21.595 Modifying pattern (EPO)
Patents: 81
Patent Applications: 6
- E21.596 Using laser, e.g., laser cutting, laser direct writing, laser repair (EPO)
Patents: 154
Patent Applications: 9
- E21.597 Formed through semiconductor substrate (EPO)
Patents: 193
Patent Applications: 253
- E21.598 Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (EPO)
Patents: 10
Patent Applications: 222
- E21.599 With subsequent division of substrate into plural individual devices (EPO)
Patents: 360
Patent Applications: 628
- E21.6 Involving separation of active layers from substrate (EPO)
Patents: 20
Patent Applications: 7
- E21.601 Leaving reusable substrate, e.g., epitaxial lift-off process (EPO)
Patents: 5
Patent Applications: 2
- E21.602 To produce devices each consisting of plurality of components, e.g., integrated circuits (EPO)
Patents: 108
Patent Applications: 197
- E21.603 Substrate is semiconductor, using combination of semiconductor substrates, e.g., diamond, SiC, Si, Group III-V compound, and/or Group II-VI compound semiconductor substrates (EPO)
Patents: 28
Patent Applications: 0
- E21.604 Substrate is semiconductor, using diamond technology (EPO)
Patents: 0
Patent Applications: 0
- E21.605 Substrate is semiconductor, using SiC technology (EPO)
Patents: 17
Patent Applications: 3
- E21.606 Substrate being semiconductor, using silicon technology (EPO)
Patents: 44
Patent Applications: 27
- E21.608 Bipolar technology (EPO)
Patents: 158
Patent Applications: 38
- E21.609 Comprising combination of vertical and lateral transistors (EPO)
Patents: 33
Patent Applications: 0
- E21.61 Comprising merged transistor logic or integrated injection logic (EPO)
Patents: 57
Patent Applications: 1
- E21.611 Complementary devices, e.g., complementary transistors (EPO)
Patents: 27
Patent Applications: 11
- E21.612 Complementary vertical transistors (EPO)
Patents: 76
Patent Applications: 3
- E21.613 Memory structures (EPO)
Patents: 57
Patent Applications: 18
- E21.614 Three-dimensional integrated circuits stacked in different levels (EPO)
Patents: 267
Patent Applications: 33
- E21.615 Field-effect technology (EPO)
Patents: 5
Patent Applications: 78
- E21.616 MIS technology (EPO)
Patents: 112
Patent Applications: 312
- E21.617 Combination of charge coupled devices, i.e., CCD or BBD (EPO)
Patents: 64
Patent Applications: 5
- E21.618 With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (EPO)
Patents: 119
Patent Applications: 24
- E21.619 With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO)
Patents: 154
Patent Applications: 46
- E21.62 Manufacturing common source or drain regions between plurality of conductor-insulator-semiconductor structures (EPO)
Patents: 124
Patent Applications: 2
- E21.621 With particular manufacturing method of gate conductor, e.g., particular materials, shapes (EPO)
Patents: 62
Patent Applications: 29
- E21.622 Silicided or salicided gate conductors (EPO)
Patents: 96
Patent Applications: 12
- E21.623 Gate conductors with different gate conductor materials or different gate conductor implants, e.g., dual gate structures (EPO)
Patents: 102
Patent Applications: 8
- E21.624 Gate conductors with different shapes, lengths or dimensions (EPO)
Patents: 75
Patent Applications: 2
- E21.625 With particular manufacturing method of gate insulating layer, e.g., different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants (EPO)
Patents: 260
Patent Applications: 37
- E21.626 With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (EPO)
Patents: 150
Patent Applications: 10
- E21.627 Interconnection or wiring or contact manufacturing related aspects (EPO)
Patents: 108
Patent Applications: 31
- E21.628 Isolation region manufacturing related aspects, e.g., to avoid interaction of isolation region with adjacent structure (EPO)
Patents: 179
Patent Applications: 29
- E21.629 With particular manufacturing method of vertical transistor structures, i.e., with channel vertical to substrate surface (EPO)
Patents: 70
Patent Applications: 27
- E21.63 With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO)
Patents: 59
Patent Applications: 5
- E21.631 Combination of enhancement and depletion transistors (EPO)
Patents: 40
Patent Applications: 62
- E21.632 Complementary field-effect transistors, e.g., CMOS (EPO)
Patents: 363
Patent Applications: 570
- E21.633 With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (EPO)
Patents: 317
Patent Applications: 44
- E21.634 With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO)
Patents: 410
Patent Applications: 88
- E21.635 With particular manufacturing method of gate conductor, e.g., particular materials, shapes (EPO)
Patents: 64
Patent Applications: 30
- E21.636 Silicided or salicided gate conductors (EPO)
Patents: 168
Patent Applications: 13
- E21.637 Gate conductors with different gate conductor materials or different gate conductor implants, e.g., dual gate structures (EPO)
Patents: 233
Patent Applications: 9
- E21.638 Gate conductors with different shapes, lengths or dimensions (EPO)
Patents: 64
Patent Applications: 3
- E21.639 With particular manufacturing method of gate insulating layer, e.g., different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants (EPO)
Patents: 148
Patent Applications: 39
- E21.64 With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (EPO)
Patents: 192
Patent Applications: 14
- E21.641 Interconnection or wiring or contact manufacturing related aspects (EPO)
Patents: 146
Patent Applications: 19
- E21.642 Isolation region manufacturing related aspects, e.g., to avoid interaction of isolation region with adjacent structure (EPO)
Patents: 223
Patent Applications: 34
- E21.643 With particular manufacturing method of vertical transistor structures, i.e., with channel vertical to substrate surface (EPO)
Patents: 50
Patent Applications: 6
- E21.644 With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO)
Patents: 240
Patent Applications: 5
- E21.645 Memory structures (EPO)
Patents: 187
Patent Applications: 186
- E21.646 Dynamic random access memory structures (DRAM) (EPO)
Patents: 298
Patent Applications: 222
- E21.647 Characterized by type of capacitor (EPO)
Patents: 187
Patent Applications: 42
- E21.648 Capacitor stacked over transfer transis tor (EPO)
Patents: 1340
Patent Applications: 21
- E21.649 Making connection between transistor and capacitor, e.g., plug (EPO)
Patents: 192
Patent Applications: 8
- E21.65 Capacitor extending under transfer transistor area (EPO)
Patents: 35
Patent Applications: 0
- E21.651 Capacitor in U- or V-shaped trench in substrate (EPO)
Patents: 348
Patent Applications: 12
- E21.652 In combination with vertical transistor (EPO)
Patents: 196
Patent Applications: 2
- E21.653 Making connection between transistor and capacitor, e.g., buried strap (EPO)
Patents: 98
Patent Applications: 2
- E21.654 Characterized by type of transistor; manufacturing of transistor (EPO)
Patents: 297
Patent Applications: 11
- E21.655 Transistor in U- or V-shaped trench in substrate (EPO)
Patents: 146
Patent Applications: 4
- E21.656 Characterized by data lines (EPO)
Patents: 52
Patent Applications: 2
- E21.657 Making bit line (EPO)
Patents: 125
Patent Applications: 4
- E21.658 Making bit line contact (EPO)
Patents: 209
Patent Applications: 2
- E21.659 Making word line (EPO)
Patents: 71
Patent Applications: 0
- E21.66 Simultaneous fabrication of periphery and memory cells (EPO)
Patents: 395
Patent Applications: 2
- E21.661 Static random access memory structures (SRAM) (EPO)
Patents: 599
Patent Applications: 52
- E21.662 Read-only memory structures (ROM), i.e., nonvolatile memory structures (EPO)
Patents: 64
Patent Applications: 51
- E21.663 Ferroelectric nonvolatile memory structures (EPO)
Patents: 48
Patent Applications: 18
- E21.664 With ferroelectric capacitor (EPO)
Patents: 213
Patent Applications: 26
- E21.665 Magnetic nonvolatile memory structures, e.g., MRAM (EPO)
Patents: 102
Patent Applications: 46
- E21.666 PROM (EPO)
Patents: 30
Patent Applications: 2
- E21.667 ROM only (EPO)
Patents: 8
Patent Applications: 1
- E21.668 With source and drain on same level, e.g., lateral channel (EPO)
Patents: 19
Patent Applications: 2
- E21.669 Source or drain contact programmed (EPO)
Patents: 19
Patent Applications: 0
- E21.67 Gate contact programmed (EPO)
Patents: 13
Patent Applications: 0
- E21.671 Doping programmed, e.g., mask ROM (EPO)
Patents: 38
Patent Applications: 2
- E21.672 Entire channel doping programmed (EPO)
Patents: 169
Patent Applications: 0
- E21.673 Source or drain doping programmed (EPO)
Patents: 57
Patent Applications: 0
- E21.674 Gate programmed, e.g., different gate material or no gate (EPO)
Patents: 10
Patent Applications: 0
- E21.675 Gate dielectric programmed, e.g., different thickness (EPO)
Patents: 28
Patent Applications: 1
- E21.676 With source and drain on different levels, e.g., vertical channel (EPO)
Patents: 37
Patent Applications: 0
- E21.677 With FETs on different levels, e.g., 3D ROM (EPO)
Patents: 13
Patent Applications: 0
- E21.678 Simultaneous fabrication of periphery and memory cells (EPO)
Patents: 27
Patent Applications: 0
- E21.679 Charge trapping insulator nonvolatile memory structures (EPO)
Patents: 160
Patent Applications: 57
- E21.68 Electrically programmable (EPROM), i.e., floating gate memory structures (EPO)
Patents: 307
Patent Applications: 59
- E21.681 With conductive layer as control gate (EPO)
Patents: 15
Patent Applications: 17
- E21.682 With source and drain on same level and without cell select transistor (EPO)
Patents: 957
Patent Applications: 6
- E21.683 Simultaneous fabrication of periphery and memory cells (EPO)
Patents: 44
Patent Applications: 5
- E21.684 Including one type of peripheral FET (EPO)
Patents: 33
Patent Applications: 1
- E21.685 Control gate layer used for peripheral FET (EPO)
Patents: 67
Patent Applications: 1
- E21.686 Intergate dielectric layer used for peripheral FET (EPO)
Patents: 24
Patent Applications: 0
- E21.687 Floating gate layer used for peripheral FET (EPO)
Patents: 31
Patent Applications: 0
- E21.688 Floating gate dielectric layer used for peripheral FET (EPO)
Patents: 117
Patent Applications: 1
- E21.689 Including different types of peripheral FETs (EPO)
Patents: 271
Patent Applications: 5
- E21.69 With source and drain on same level and with cell select transistor (EPO)
Patents: 157
Patent Applications: 5
- E21.691 Simultaneous fabrication of periphery and memory cells (EPO)
Patents: 58
Patent Applications: 22
- E21.692 With source and drain on different levels, e.g., sloping channel (EPO)
Patents: 17
Patent Applications: 2
- E21.693 For vertical channel (EPO)
Patents: 78
Patent Applications: 1
- E21.694 With doped region as control gate (EPO)
Patents: 51
Patent Applications: 0
- E21.695 Combination of bipolar and field-effect technologies (EPO)
Patents: 49
Patent Applications: 14
- E21.696 Bipolar and MOS technologies (EPO)
Patents: 642
Patent Applications: 69
- E21.697 Substrate is Group III-V semiconductor (EPO)
Patents: 175
Patent Applications: 4
- E21.698 Substrate is Group II-VI semiconductor (EPO)
Patents: 8
Patent Applications: 4
- E21.699 Substrate is semiconductor other than diamond, SiC, Si, Group III-V compound, or Group II-VI compound (EPO)
Patents: 12
Patent Applications: 5
- E21.7 Substrate is nonsemiconductor body, e.g., insulating body (EPO)
Patents: 10
Patent Applications: 222
- E21.701 Substrate is sapphire, e.g., silicon on sapphire structure (SOS) (EPO)
Patents: 3
Patent Applications: 3
- E21.702 To produce devices, each consisting of single circuit element (EPO)
Patents: 1
Patent Applications: 14
- E21.703 Substrate is semiconductor body (EPO)
Patents: 1585
Patent Applications: 120
- E21.704 Substrate is nonsemiconductor body, e.g., insulating body (EPO)
Patents: 137
Patent Applications: 119
- E21.705 Assembly of devices consisting of solid-state components formed in or on a common substrate; assembly of integrated circuit devices (EPO)
Patents: 434
Patent Applications: 277
- 900 MOSFET TYPE GATE SIDEWALL INSULATING SPACER
Patents: 463
Patent Applications: 39
- 901 MOSFET SUBSTRATE BIAS
Patents: 72
Patent Applications: 1
- 902 FET WITH METAL SOURCE REGION
Patents: 23
Patent Applications: 0
- 903 FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL
Patents: 636
Patent Applications: 37
- 904 WITH PASSIVE COMPONENTS, (e.g., POLYSILICON RESISTORS)
Patents: 284
Patent Applications: 9
- 905 PLURAL DRAM CELLS SHARE COMMON CONTACT OR COMMON TRENCH
Patents: 120
Patent Applications: 2
- 906 DRAM WITH CAPACITOR ELECTRODES USED FOR ACCESSING (E.G., BIT LINE IS CAPACITOR PLATE)
Patents: 154
Patent Applications: 0
- 907 FOLDED BIT LINE DRAM CONFIGURATION
Patents: 68
Patent Applications: 1
- 908 DRAM CONFIGURATION WITH TRANSISTORS AND CAPACITORS OF PAIRS OF CELLS ALONG A STRAIGHT LINE BETWEEN ADJACENT BIT LINES
Patents: 101
Patent Applications: 2
- 909 MACROCELL ARRAYS (E.G., GATE ARRAYS WITH VARIABLE SIZE OR CONFIGURATION OF CELLS)
Patents: 84
Patent Applications: 1
- 910 DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY)
Patents: 61
Patent Applications: 7
- 911 LIGHT SENSITIVE ARRAY ADAPTED TO BE SCANNED BY ELECTRON BEAM (E.G.,VIDICON DEVICE)
Patents: 28
Patent Applications: 0
- 912 CHARGE TRANSFER DEVICE USING BOTH ELECTRON AND HOLE SIGNAL CARRIERS
Patents: 23
Patent Applications: 0
- 913 WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING)
Patents: 71
Patent Applications: 12
- 914 POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS)
Patents: 80
Patent Applications: 0
- 915 WITH TITANIUM NITRIDE PORTION OR REGION
Patents: 198
Patent Applications: 1
- 916 NARROW BAND GAP SEMICONDUCTOR MATERIAL (>>1EV)
Patents: 42
Patent Applications: 0
- 917 PLURAL DOPANTS OF SAME CONDUCTIVITY TYPE IN SAME REGION
Patents: 36
Patent Applications: 0
- 918 LIGHT EMITTING REGENERATIVE SWITCHING DEVICE (E.G., LIGHT EMITTING SCR) ARRAYS, CIRCUITRY, ETC.
Patents: 69
Patent Applications: 1
- 919 ELEMENTS OF SIMILAR CONSTRUCTION CONNECTED IN SERIES OR PARALLEL TO AVERAGE OUT MANUFACTURING VARIATIONS IN CHARACTERISTICS
Patents: 26
Patent Applications: 0
- 920 CONDUCTOR LAYERS ON DIFFERENT LEVELS CONNECTED IN PARALLEL (E.G., TO REDUCE RESISTANCE)
Patents: 50
Patent Applications: 0
- 921 RADIATION HARDENED SEMICONDUCTOR DEVICE
Patents: 36
Patent Applications: 0
- 922 WITH MEANS TO PREVENT INSPECTION OF OR TAMPERING WITH AN INTEGRATED CIRCUIT (E.G., "SMART CARD", ANTI-TAMPER)
Patents: 64
Patent Applications: 4
- 923 WITH MEANS TO OPTIMIZE ELECTRICAL CONDUCTOR CURRENT CARRYING CAPACITY (E.G., PARTICULAR CONDUCTOR ASPECT RATIO)
Patents: 78
Patent Applications: 1
- 924 WITH PASSIVE DEVICE (E.G., CAPACITOR), OR BATTERY, AS INTEGRAL PART OF HOUSING OR HOUSING ELEMENT (E.G., CAP)
Patents: 102
Patent Applications: 18
- 925 BRIDGE RECTIFIER MODULE
Patents: 24
Patent Applications: 0
- 926 ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD
Patents: 89
Patent Applications: 0
- 927 DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER
Patents: 27
Patent Applications: 0
- 928 WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION
Patents: 41
Patent Applications: 1
- 929 PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER)
Patents: 20
Patent Applications: 0
- 930 THERMOELECTRIC (E.G., PELTIER EFFECT) COOLING
Patents: 135
Patent Applications: 9
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Definition
This class provides for active solid-state electronic devices,
that is, electronic devices or components that are made up primarily
of solid materials, usually semiconductors, which operate by the
movement of charge carriers - electrons or holes - which undergo
energy level changes within the material and can modify an input
voltage to achieve rectification, amplification, or switching action,
and are not classified elsewhere. SCOPE OF THE CLASS Active solid-state electronic devices include diodes, transistors,
thyristors, etc., but exclude pure resistors, capacitors, inductors,
or combinations solely thereof. The latter class of devices is characterized
as passive. The subject matter to be found here includes only active solid-state
devices, per se. It may include one or more such devices combined
with contacts or leads, or structures configured to be tested on
a semiconductor chip, or merely semiconductor material without contacts
or leads where the sole disclosed use is an active solid-state device.
This subject matter does not include
active solid-state devices combined with significant circuits. Claims reciting an integrated circuit nominally with significant
metallization will be classified in Class 257, whereas otherwise,
nominal recitation of an integrated circuit (i.e., without significant
active solid-state device recitation) will not be sufficient to
permit the device to be classified in Class 257. KEY CONCEPTS See Subclass References to the Current Class, below, for references
that relate to key concepts and terms found in Class 257. An indication
that a particular concept or term occurs in one or more subclasses
does not mean that the indicated subclass or subclasses are the
only places that subject matter may be found. That subject matter
may possibly be found elsewhere in Class 257 listed under a related
term or concept that may be broader or narrower or of the same scope. OTHER CLASSIFICATION SYSTEMS Each subclass definition may contain an OTHER CLASSIFICATION
SYSTEMS listing that is to be used for informational purposes only.
These classification listings may change at any time after their
publication and are therefore not guaranteed to be current. In
addition, the classification listing does not necessarily indicate
the sole relationship between the U.S. Patent Classification System
and foreign classifications. Even where a single classification
is listed for a single U.S. subclass, a one-to-one correlation should
not be inferred. As a result, information contained therein is considered
to be only a guide to related subject matter.
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Lines with other classes and within this class
A. Classes related to Class 257 subject matter in the sense
that they employ active solid-state devices in electronic circuits
and the relationship of these classes to Class 257 is mainly that
of a combination to a subcombination or of a genus to a specie.
See References to Other Classes, below, referencing this section. B. Classes related to Class 257 subject matter in the sense
that they employ active solid-state devices in electronic circuits
and the use of active solid-state electronic devices primarily as
a perfecting feature. See References to Other Classes, below, referencing
this section. C. See References to Other Classes below for classes that
provide for materials used in active solid-state electronic devices. D. See References to Other Classes, below, for classes related
to Class 257 because they provide for methods of making, cleaning,
coating, etc., active solid-state devices, e.g., Class 438, Semiconductor
Device Manufacturing: Process. E. See References to Other Classes, below, for Classes related
to Class 257 because they provide for active solid-state electronic
devices structures with a specified use, e.g., Class 136, Batteries:
Thermoelectric and Photoelectric. F. See References to Other Classes, below, for classes providing
for provide for subcombination subject matter that can be used
as component part of active solid-state electronic devices (e.g.,
lead frames) or perfect the device (e.g., a heat sink). G. Classes which provide for passive solid-state electronic
devices with names that may refer to either active or passive solid-state
electronic devices, e.g., coherers, varistors, varactors. luminescent
or electroluminescent devices. The devices may be part of the main
subject matter of the class or may be used as circuit elements in circuits
or control or measuring systems which form the main subject matter
of the class. See References to Other Classes, below, referencing this section. |
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