Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 8188498 | Light emitting device package A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second ca... | 05/29/2012 |
| 8188495 | Gallium nitride-based compound semiconductor light emitting device An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudina... | 05/29/2012 |
| 8188496 | Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconducto... | 05/29/2012 |
| 8188501 | Optical device to emit polarized light An optical device capable of emitting polarized light includes a light emitting means, two multi-layer optical films disposed above and below the light emitting means and two metal layers. The two metal layers cover the two multi-layer optical layers from the upper ... | 05/29/2012 |
| 8188499 | Polarized light emitting diode device and method for manufacturing the same The present invention relates to a polarized light emitting diode (LED) device and the method for manufacturing the same, in which the LED device comprises: a base, a light emitting diode (LED) chip, a polarizing waveguide and a packaging material. In an exemplary e... | 05/29/2012 |
| 8188497 | Semiconductor device and method of manufacturing the same The invention is directed to providing a smaller semiconductor device with a lower manufacturing cost and higher reliability and a method of manufacturing the same. A light emitting element (a LED die 8) is formed on a first substrate 1. A cathode elec... | 05/29/2012 |
| 8188500 | Organic light-emitting element and light-emitting device using the same An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emi... | 05/29/2012 |
| 8188494 | Utilizing nanowire for generating white light One embodiment in accordance with the invention is an apparatus that can include a light emitting diode that is for of outputting light in the blue wavelength. Furthermore, the apparatus can also include a nanowire or nanoparticle coupled to a surface of the light e... | 05/29/2012 |
| 8188502 | Light emitting device with phosphor wavelength conversion A light emitting device comprises an excitation source (20), one or more light emitting diode(s) operable to generate excitation light of a first wavelength range (λ1) and a light emitting surface (14) having a phosphor material (26)... | 05/29/2012 |
| 8183588 | High efficiency group III nitride LED with lenticular surface A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by ... | 05/22/2012 |
| 8183589 | Substrate for fabricating light emitting device and method for fabricating the light emitting device Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser ir... | 05/22/2012 |
| 8183587 | LED with upstanding nanowire structure and method of producing such The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding n... | 05/22/2012 |
| 8178891 | Semiconductor light emitting device and method for manufacturing the same Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a pro... | 05/15/2012 |
| 8178890 | Light emitting diode package structure A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a highly thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The opt... | 05/15/2012 |
| 8178889 | Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11a which has a crystal defect density higher than in the other region. On the substrate 11, a semiconductor layer 12 is formed. On ... | 05/15/2012 |
| 8178888 | Semiconductor light emitting devices with high color rendering A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a w... | 05/15/2012 |
| 8174040 | Light emitting device A light emitting device is provided. The light emitting device comprises: a reflective layer; and a semiconductor layer including a light emitting layer on the reflective layer. A distance between the reflective layer and a center of the light emitting layer corresp... | 05/08/2012 |
| 8174042 | Method of growing semiconductor heterostructures based on gallium nitride The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers... | 05/08/2012 |
| 8174037 | High efficiency group III nitride LED with lenticular surface A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a len... | 05/08/2012 |
| 8174038 | Light emitting device A light emitting device includes a board, a semiconductor light emitting element formed on the board optionally via a submount, a cap sealing the semiconductor light emitting element and a reflector provided surrounding the cap. The cap has top and bottom surfaces t... | 05/08/2012 |
| 8174039 | Light-emitting diode device with high luminescent efficiency The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the... | 05/08/2012 |
| 8174036 | Lighting device The invention relates to a lighting device comprising a light source (1) that emits incoherent light with a total radiation power P and has a radiation-emitting area (S) divided into a plurality of subareas (Si), wherein assigned to each subarea (S... | 05/08/2012 |
| 8174041 | Lighting unit with temperature compensation A lighting unit comprises a packaging substrate (10) formed from a semiconductor, a channel (12) formed in the substrate and a discrete light emitting diode arrangement (34) in the channel. A surface region of the channel comprises doped semicon... | 05/08/2012 |
| 8168992 | Light-emitting diode backlight module A light-emitting diode backlight module includes a base and a light source disposed on the base. The light source comprises a substrate, a heat sink and an LED chip. The base has a heat conductor. The heat sink of the light source is coupled between the substrate of... | 05/01/2012 |
| 8168991 | Optical element and optoelectronic component comprising such an optical element An optical element (1) is specified comprising an optical body (2) containing a plastic material. The optical body (2) is completely encapsulated by a protective layer (3) containing a silicon oxide. An optoelectronic component comprising... | 05/01/2012 |
| 8168993 | Light emtting device, method for manufacturing light emitting device, and light emitting apparatus A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact laye... | 05/01/2012 |
| 8164108 | Light emitting diode chip and manufacturing method thereof A light emitting diode chip includes a thermal conductive substrate, an epi-layer, a thin-type ohmic contacting film, a transparent conducting layer, and an electrode pad. The epi-layer includes a p-type semiconductor layer, an n-type semiconductor layer, and an act... | 04/24/2012 |
| 8164109 | Nitride semiconductor element and method for producing the same A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an elec... | 04/24/2012 |
| 8164107 | Light emitting device and method of manufacturing the same The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type ... | 04/24/2012 |
| 8158996 | Semiconductor light emitting device package A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groov... | 04/17/2012 |
| 8158997 | Optical element package and method of manufacturing the same An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minut... | 04/17/2012 |
| 8158998 | High-reflectivity and low-defect density LED structure The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials wh... | 04/17/2012 |
| 8158995 | Optoelectronic semiconductor chip An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnet... | 04/17/2012 |
| 8154040 | Light-emitting diode arrangement and method for producing the same A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102)—opposite the front side—on a first m... | 04/10/2012 |
| 8154041 | Light emitting device A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substra... | 04/10/2012 |
| 8154043 | Packaged light emitting devices Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a firs... | 04/10/2012 |
| 8154038 | Group-III nitride for reducing stress caused by metal nitride reflector A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light e... | 04/10/2012 |
| 8154039 | High efficiency group III nitride LED with lenticular surface A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geomet... | 04/10/2012 |
| 8154042 | Light emitting device with trenches and a top contact A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region an... | 04/10/2012 |
| 8148743 | Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is... | 04/03/2012 |
