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| Number | Title | Issue Date |
| 8183585 | Lighting module A lighting module comprising a base panel and a plurality of light-emitting diode (LED) chips attached directly to the base panel. The LED chips are in electrical communication with conductive traces on the base panel, which deliver a current to the LED chips. Vario... | 05/22/2012 |
| 8183586 | Organic electroluminescence device and luminescence apparatus The invention provides an organic EL device including an anode, a cathode, and a luminescent portion positioned between the anode and cathode, the luminescent portion including two or more luminescent layers, each of the luminescent layers including plural primary l... | 05/22/2012 |
| 8154037 | Light-emitting diode light source apparatus An LED light source apparatus comprises a circular base having thermal conductivity, an insulative substrate concentric with the base and including a pass-through hole provided to pass through an upper surface and a lower surface of the substrate, at least one mount... | 04/10/2012 |
| 8115219 | LED semiconductor body and use of an LED semiconductor body An LED semiconductor body includes at least one first radiation-generating active layer and at least one second radiation-generating active layer, wherein the LED semiconductor body has a photonic crystal. ... | 02/14/2012 |
| 8110841 | Nitride based light emitting device A nitride based light emitting device is disclosed. More particularly, a nitride based light emitting device capable of improving light emitting efficiency and reliability thereof is disclosed. The nitride based light emitting device includes a first conductive semi... | 02/07/2012 |
| 8076685 | Nitride semiconductor device having current confining layer A nitride semiconductor device includes an active layer formed between an n-type cladding layer and a p-type cladding layer, and a current confining layer having a conductive area through which a current flows to the active layer. The current confining layer include... | 12/13/2011 |
| 8076684 | Group III intride semiconductor light emitting element A group III nitride semiconductor light emitting element, comprising having a light emitting layer with a multiquantum well structure formed of a group III nitride semiconductor. The light emitting layer has plural well layers, and the plural well layers are formed ... | 12/13/2011 |
| 8049232 | Organic EL element having a plurality of light emitting layers To provide an organic EL element in which the hue of display light can be restrained from varying according to a change of the viewing angle. The organic EL element includes: a first electrode (anode) 4 having translucency; an organic layer 7 at least ... | 11/01/2011 |
| 7973326 | Semiconductor structure combination for epitaxy of semiconductor optoelectronic device The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The ... | 07/05/2011 |
| 7932526 | LED semiconductor body and use of an LED semiconductor body An LED semiconductor body comprising a first radiation-generating active layer and a second radiation-generating active layer, the first active layer and the second active layer being arranged one above another in the vertical direction. ... | 04/26/2011 |
| 7928454 | Light emitting device and method for manufacturing the same Disclosed are a light emitting device and a method for manufacturing the same. A light emitting diode comprises a plurality of Un-GaN layers and a plurality of N-type semiconductor layers, an active layer on the N-type semiconductor layer, and a P-type semiconductor... | 04/19/2011 |
| 7868337 | Light emitting diode and method for manufacturing the same Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately lami... | 01/11/2011 |
| 7821019 | Triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a ... | 10/26/2010 |
| 7812358 | Light-emitting device A light-emitting device is provided in a light-emitting element with a bonding wire that is a fine metallic wire formed mainly of gold or copper and coated at least partly with a substance capable of heightening a reflection coefficient of a wavelength of light emit... | 10/12/2010 |
| 7800120 | Semiconductor light emitting element A semiconductor light emitting element comprising: a plurality of light-emitting-layer forming portions each of which includes a pn junction capable of emitting light of a certain wavelength, and which are separated from one anothe... | 09/21/2010 |
| 7759690 | Gallium nitride-based compound semiconductor light-emitting device An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compo... | 07/20/2010 |
| 7728338 | Nitride semiconductor light emitting device and fabricating method thereof A nitride semiconductor light emitting device including: a first nitride semiconductor layer, an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second... | 06/01/2010 |
| 7687814 | Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so cal... | 03/30/2010 |
| 7683392 | Semiconductor device with anisotropy-relaxed quantum dots A semiconductor quantum dot device includes: an inclined InP substrate whose principal surface normal is inclined from a [001] direction to a [1 −10] direction in a (001) plane; and semiconductor quantum dots made of InAs1-xSbx (0 | 03/23/2010 |
| 7675077 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first su... | 03/09/2010 |
| 7638809 | Light emitting device A light emitting device includes a transparent substrate having first and second surfaces, a semiconductor layer provided on the first surface, a first light emission layer provided on the semiconductor layer and emitting first ultraviolet light including a waveleng... | 12/29/2009 |
| 7569863 | Semiconductor light emitting device A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of... | 08/04/2009 |
| 7479661 | Nitride semiconductor light emitting device The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers ... | 01/20/2009 |
| 7456435 | Light-emitting semiconductor device A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lam... | 11/25/2008 |
| 7449723 | Semiconductor device A semiconductor device is disclosed in which a barrier layer is deposited on the sides of the mesa. The barrier layer may comprise a semiconductor material. The barrier layer reduces diffusion of dopants into the active region of the device. ... | 11/11/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7372033 | Multi-spectral filtering One device embodiment includes a device for filtering radiation from a target region in multiple spectral bands. The device includes a number of optical quantum dot filters, each having a particular pass-through wavelength range, positioned on a rotatable disk. ... | 05/13/2008 |
| 7368309 | Nitride semiconductor and fabrication method thereof The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in a... | 05/06/2008 |
| 7368757 | Compound semiconductor and compound semiconductor device using the same A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 1016-102... | 05/06/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7358659 | Monolithic white light emitting device having nitride cladding layers and passive layer A monolithic white light emitting device is provided, including an active layer and a passive layer that emits light with a long wavelength obtained by wavelength conversion. White light can be obtained by appropriately controlling lights emitted from the active lay... | 04/15/2008 |
| 7358538 | Organic light-emitting devices with multiple hole injection layers containing fullerene The present invention provides layered hole injection structures including one or more layers of fullerenes for application in an organic electroluminescent device. The layered structures include a bi-layered structure including an electrically conductive layer serv... | 04/15/2008 |
| 7352009 | Light emitting nitride semiconductor device and method of fabricating the same There is provided a light emitting nitride semiconductor device including a substrate, a semiconductor layer of a first conductivity overlying the substrate, a light emitting layer overlying the semiconductor layer of the first conductivity, a semiconductor layer of... | 04/01/2008 |
| 7351661 | Semiconductor device having trench isolation layer and a method of forming the same A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a buried layer, wherein the buried layer includes a first buried layer fo... | 04/01/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7323722 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 01/29/2008 |
| 7323721 | Monolithic multi-color, multi-quantum well semiconductor LED A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitti... | 01/29/2008 |
| 7315048 | Method and apparatus for mixing light emitted by a plurality of solid-state light emitters In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they primarily emit light away from the substrate. The light emitters are... | 01/01/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
