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| Number | Title | Issue Date |
| 8183584 | High efficient phosphor-converted light emitting diode A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-e... | 05/22/2012 |
| 8164106 | AIGaInP light emitting diode A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the compositio... | 04/24/2012 |
| 8158994 | GaN LED element and light emitting device having a structure to reduce light absorption by a pad electrode included therein A first conductive film 104-1 of a light-transmissive conductive oxide film 104 and a positive pad electrode 105 are electrically connected through a second conductive film 104-2 of the light-transmissive conductive oxide fi... | 04/17/2012 |
| 8124990 | Semiconductor light emitting device having an electron barrier layer between a plurality of active layers Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a se... | 02/28/2012 |
| 8089082 | Nitride semiconductor LED and fabrication method thereof A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an Inx | 01/03/2012 |
| 8053794 | Nitride semiconductor light emitting device and fabrication method thereof A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a th... | 11/08/2011 |
| 8044417 | Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarizatio... | 10/25/2011 |
| 8030673 | Nitride semiconductor light emitting element Provided is a nitride semiconductor light emitting element capable of producing an emission spectrum having two peaks with stable ratio of emission peak intensity. The nitride semiconductor light emitting 1 comprises an active layer 12 disposed between... | 10/04/2011 |
| 8017958 | P-contact layer for a III-P semiconductor light emitting device A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1−x p-contact layer, wherein x | 09/13/2011 |
| 7999274 | White light emitting device A white light emitting device is disclosed. The white light emitting device includes a blue light emitting diode (LED) including a plurality of active layers generating different peak wavelengths, and phosphors emitting yellow light when excited by light emitted fro... | 08/16/2011 |
| 7960745 | Light emitting device and method of fabricating the same A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first... | 06/14/2011 |
| 7943943 | Light-emitting device and manufacturing method thereof To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including... | 05/17/2011 |
| 7935974 | White light emitting device The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the fir... | 05/03/2011 |
| 7935973 | Light-emitting diode, light-emitting diode substrate and production method of light-emitting diode The light-emitting diode is a light-emitting diode including a light-converting material substrate and a semiconductor layer formed on the light-converting material substrate, wherein the light-converting material substrate includes a solidified body in which at lea... | 05/03/2011 |
| 7928453 | Semiconductor light emitting device An end face emission type semiconductor light emitting device which include: a substrate; a first conductive type clad layer stacked on the substrate; an active region layer including an active layer stacked on the first conductive type clad layer; a second conducti... | 04/19/2011 |
| 7910937 | Method and structure for fabricating III-V nitride layers on silicon substrates A method and structure for fabricating III-V nitride layers on silicon substrates includes a substrate, a transition structure having AlGaN, AlN and GaN layers, and a superlattice structure having AlGaN and GaN layers. In the invention, the large lattice mismatch (1... | 03/22/2011 |
| 7880187 | Semiconductor light emitting device having narrow radiation spectrum Radiation occurs when current is injected into an active layer from electrodes. A pair of clad layers is disposed sandwiching the active layer, the clad layer having a band gap wider than a band gap of the active layer. An optical absorption layer is disposed outsid... | 02/01/2011 |
| 7872270 | Semiconductor light emitter A semiconductor light emitter includes a quantum well active layer which includes nitrogen and at least one other Group-V element, and barrier layers which are provided alongside the quantum well active layer, wherein the quantum well active layer and the barrier la... | 01/18/2011 |
| 7863631 | A1InGaP LED having reduced temperature dependence To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately eq... | 01/04/2011 |
| 7838893 | Semiconductor optical device A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top o... | 11/23/2010 |
| 7763902 | Light emitting diode chip A LED chip including a substrate, a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, at least an Indium-doped AlxGa1-xN based material layer (0≦x | 07/27/2010 |
| 7759689 | Photonic crystal structures and methods of making and using photonic crystal structures A light emitting device having a buried photonic bandgap (PBG) structure is created using a relatively simple fabrication method known as epitaxial layer overgrowth (ELOG). By burying the PBG structure, the difficulties and disadvantages associated with the known te... | 07/20/2010 |
| 7750355 | Light emitting element structure using nitride bulk single crystal layer The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer thereb... | 07/06/2010 |
| 7745841 | Semiconductor light-emitting device A semiconductor light-emitting device which exhibits small threshold current, high differential efficiency, and good characteristics, by reducing electrons that overflow an electron barrier, trapping the electrons in an active layer. Of the barrier layers of an acti... | 06/29/2010 |
| 7709849 | Light emitting diode having plurality of light emitting cells and method of fabricating the same The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the fir... | 05/04/2010 |
| 7705364 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-n... | 04/27/2010 |
| 7692203 | Semiconductor light emitting device A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers ... | 04/06/2010 |
| 7692202 | Semiconductor structure comprising active zones A semiconductor structure with active zones, such as light diodes or photodiodes, including a substrate (SUB) with at least two active zones (AZ1-AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wav... | 04/06/2010 |
| 7675076 | Nitride-based semiconductor device of reduced voltage drop A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working... | 03/09/2010 |
| 7671375 | Nitride-based semiconductor device of reduced voltage drop, and method of fabrication A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n... | 03/02/2010 |
| 7629619 | Group III nitride-based compound semiconductor light-emitting device and method for producing the same A Group III nitride-based compound semiconductor light-emitting device having a quantum well structure, includes a well layer, a first layer formed on one surface of the well layer, a second layer formed on the other surface of the well layer, a first region provide... | 12/08/2009 |
| 7622745 | Epitaxial wafer for a semiconductor light emitting device, method for fabricating the same and semiconductor light emitting device A n-type GaAs buffer layer 2, a n-type GaInP buffer layer 3, a n-type AlGaInP cladding layer 4, an undoped AlGaAs guide layer 5, an AlGaAs/GaAs multiquantum well (MQW) active layer 6, a first p-type AlGaInP cladding layer 7,... | 11/24/2009 |
| 7576365 | Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same A Group III nitride semiconductor light-emitting device having a stacked structure includes a transparent crystal substrate having a front surface and a back surface, a first Group III nitride semiconductor layer of first conductive type formed on the front surface ... | 08/18/2009 |
| 7550776 | Light generating semiconductor device and method of making the same In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor f... | 06/23/2009 |
| 7528417 | Light-emitting diode device and production method thereof A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-sid... | 05/05/2009 |
| 7528418 | Light-emitting device It is an object of the present invention to provide a light-emitting device with high current efficiency and high display quality, in which a change in luminance with time is suppressed. The light-emitting device is provided with a plurality of light-emitting elemen... | 05/05/2009 |
| 7518154 | Nitride semiconductor substrate and semiconductor element built thereon A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion coefficient therebetween. Electrodes are formed on the nitride semiconduct... | 04/14/2009 |
| 7501664 | III-Nitride compound semiconductor light emitting device The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made o... | 03/10/2009 |
| 7482635 | Gallium nitride-based compound semiconductor multilayer structure and production method thereof An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emis... | 01/27/2009 |
| 7462876 | Nitride semiconductor light emitting device Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially forme... | 12/09/2008 |
