...that the x-ray was discovered purely by accident? When German physicist Wilhelm Konrad von Roentgen was experimenting with cathode rays in 1895, he put an activated Crookes tube in a book and went out to lunch. When he returned, he discovered that a key that had also been placed in the book showed up as an image on the developed film!
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| Number | Title | Issue Date |
| 8120048 | LED unit An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-inci... | 02/21/2012 |
| 8101960 | Nitride light emitting device and manufacturing method thereof A nitride light emitting device includes a first conduction type cladding layer, an active layer, and a second conduction type cladding layer that are stacked on a substrate. The second conduction type cladding layer has an uneven shape including at least one concav... | 01/24/2012 |
| 8089081 | Semiconductor light emitting device A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semicon... | 01/03/2012 |
| 8076683 | Surface-textured encapsulations for use with light emitting diodes Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to ... | 12/13/2011 |
| 8058661 | Semiconductor light emitting device A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top surface that is curved to protrude, and a light emitting structure th... | 11/15/2011 |
| 8053793 | III-nitride semiconductor light emitting device The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound ... | 11/08/2011 |
| 8026526 | Optoelectronic semiconductor component An optoelectronic semiconductor component includes a basic body, at least one semiconductor chip arranged thereon, and an encapsulation embedding the at least one semiconductor chip and composed of a radiation-transmissive material with scattering particles. A radia... | 09/27/2011 |
| 8022423 | Standing transparent mirrorless light emitting diode An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent cont... | 09/20/2011 |
| 7999272 | Semiconductor light emitting device having patterned substrate There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a se... | 08/16/2011 |
| 7999273 | Light emitting device having pillar structure with roughness surface and the forming method thereof A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is fo... | 08/16/2011 |
| 7989825 | Lens-attached light-emitting element and method for manufacturing the same A lens-attached light-emitting element having an improved optical availability efficiency includes a composite lens provided on an approximately U-shaped light-emitting area of the light emitting element array. Four spherical lenses are arranged in such a manner tha... | 08/02/2011 |
| 7989826 | Semiconductor light emitting device Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semic... | 08/02/2011 |
| 7968896 | Separate optical device for directing light from an LED Embodiments of the present invention provide separate optical devices operable to couple to a separate LED, the separate optical device comprising an entrance surface to receive light from a separate LED when the separate optical device is coupled to the separate LE... | 06/28/2011 |
| 7956370 | Silicon based solid state lighting A semiconductor device includes a substrate comprising a first surface having a [111] orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured ... | 06/07/2011 |
| 7947995 | Gallium nitride-based compound semiconductor light emitting device An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. The inventive gallium nitride-based compound semiconductor lig... | 05/24/2011 |
| 7939840 | Light emitting device having light extraction structure and method for manufacturing the same A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor laye... | 05/10/2011 |
| 7915626 | Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density. ... | 03/29/2011 |
| 7893448 | Light emitting device having nano structures for light extraction The present invention relates to a light emitting device having nano structures for light extraction and a method for manufacturing the same, nano structures comprising nano rods, nano agglomerations, nano recesses, nano patterns with nano line widths, nano through-... | 02/22/2011 |
| 7875894 | Semiconductor device and fabrication method thereof A semiconductor device includes a semiconductor chip having electrode pads, and a rewiring pattern having interconnects which are connected to the electrode pads and extend over an insulation film. The semiconductor device also includes columnar electrodes each of w... | 01/25/2011 |
| 7834369 | Light-emitting device having a roughened surface with different topographies This invention provides an optoelectronic semiconductor device having a rough surface and the manufacturing method thereof. The optoelectronic semiconductor device comprises a semiconductor stack having a rough surface and an electrode layer overlaying the semicondu... | 11/16/2010 |
| 7825420 | Method for forming slot via bitline for MRAM devices A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline... | 11/02/2010 |
| 7816696 | Nitride semiconductor device and method for manufacturing same An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconduct... | 10/19/2010 |
| 7777241 | Optical devices featuring textured semiconductor layers A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The ... | 08/17/2010 |
| 7772604 | Separate optical device for directing light from an LED Embodiments of the present invention provide separate optical devices operable to couple to a separate LED, the separate optical device comprising an entrance surface to receive light from a separate LED when the separate optical device is coupled to the separate LE... | 08/10/2010 |
| 7745840 | Solide-state light source A solid-state light source includes a substrate, a solid-state light-emitting chip, a plurality of micro-members and a light-permeable encapsulation. The substrate has a substantially flat surface. The solid-state light-emitting chip is arranged on the substantially... | 06/29/2010 |
| 7741649 | Semiconductor light emitting device and method for manufacturing the same In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient struct... | 06/22/2010 |
| 7723739 | Semiconductor light emitting device and illuminating device using it A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface... | 05/25/2010 |
| 7719016 | Light-emitting diode device and backlight apparatus and liquid-crystal display apparatus using light-emitting diode device A light-emitting diode device and backlight apparatus and liquid-crystal display apparatus using light-emitting diode device are provided. A light-emitting diode device has a lens covered around a light-emitting diode chip and a processed portion for adjusting light... | 05/18/2010 |
| 7714339 | Light emitting diode A light emitting diode (LED) includes a substrate, a first type epitaxial layer, a light emitting layer, a second type epitaxial layer and a plurality of nano-particles. The first type epitaxial layer is disposed on the substrate. The light emitting layer is dispose... | 05/11/2010 |
| 7700962 | Inverted-pyramidal photonic crystal light emitting device A light-emitting device (LED) is described which exhibits high extraction efficiency and an emission profile which is substantially more directional than from a Lambertian source. The device comprises a light generating layer disposed between first and second layers... | 04/20/2010 |
| 7700963 | Nitride semiconductor light-emitting device In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitr... | 04/20/2010 |
| 7692201 | Semiconductor light-emitting device with improved light extraction efficiency The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substra... | 04/06/2010 |
| 7687813 | Standing transparent mirrorless light emitting diode An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent cont... | 03/30/2010 |
| 7683391 | UV emitting LED having mesa structure The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED. In an embodiment of the invention, the UV-LED is characterized by a base layer material including a substrate, a p-doped semiconductor material, a mult... | 03/23/2010 |
| 7663151 | Method of fabricating light emitting device and thus-fabricated light emitting device A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-cond... | 02/16/2010 |
| 7663150 | Optoelectronic chip An optoelectronic chip having a semiconductor body (14), which contains a radiation-emitting region (2), and a partial region (3) in which the surface (13) of the semiconductor body (14) is curved convexly toward a carrier (10 | 02/16/2010 |
| 7652299 | Nitride semiconductor light-emitting device and method for fabrication thereof A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular t... | 01/26/2010 |
| 7635873 | Semiconductor light emitting device and method of manufacturing the same A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer ca... | 12/22/2009 |
| 7589352 | Light emitting device A light emitting element (100) comprising an element chip (100C) provided, at least in a partial section in the thickness direction thereof, with a part of reduced cross-section where the cross sectional area decreases continuously or stepwise in the d... | 09/15/2009 |
| 7576364 | Display device and method of manufacturing the same A display device and its method of manufacture. The display device is formed to include a substrate having an upper surface, a recess region having a bottom surface and sidewalls, a light-emitting element and a switch element. The light-emitting element includes a f... | 08/18/2009 |