Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| RE43159 | Semiconductor light emitting device A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The ... | 02/07/2012 |
| 8106412 | Semiconductor light emitting device and fabrication method for the same The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal ... | 01/31/2012 |
| 8101959 | Light emitting device An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower... | 01/24/2012 |
| 8076682 | Contact for a semiconductor light emitting device A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion ... | 12/13/2011 |
| 8063408 | Integrated semiconductor optical device and optical apparatus using the same In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal sur... | 11/22/2011 |
| 8058660 | Semiconductor light emitting device, method for manufacturing same, and method for forming underlying layer Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the un... | 11/15/2011 |
| 8026525 | Boron phosphide-based semiconductor light-emitting device A boron phosphide-based semiconductor light-emitting device includes a substrate of silicon single crystal, a first cubic boron phosphide-based semiconductor layer that is provided on a surface of the substrate and contains twins, a light-emitting layer that is comp... | 09/27/2011 |
| 7994525 | Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor... | 08/09/2011 |
| 7973325 | Reflective electrode and compound semiconductor light emitting device including the same Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting... | 07/05/2011 |
| 7964882 | Nitride semiconductor-based light emitting devices A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-ty... | 06/21/2011 |
| 7956369 | Light emitting diode A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a sec... | 06/07/2011 |
| 7952109 | Light-emitting crystal structures An apparatus comprising a structure comprising a group III-nitride and a junction between n-type and p-type group III-nitride therein, the structure having a pyramidal shape or a wedge shape. ... | 05/31/2011 |
| 7947994 | Nitride semiconductor device According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contr... | 05/24/2011 |
| 7943942 | Semiconductor light-emitting device with double-sided passivation A light-emitting device includes a substrate, a first doped semiconductor layer situated above the substrate, a second doped semiconductor layer situated above the first doped layer, and a multi-quantum-well (MQW) active layer situated between the first and the seco... | 05/17/2011 |
| 7928452 | GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of manufacturing GaN-based semiconductor light-emitting element, method of driving GaN-based semiconductor light-emitting element, and image display apparatus A GaN-based semiconductor light-emitting element includes a first GaN-based compound semiconductor layer of n-conductivity type, an active layer, a second GaN-based compound semiconductor layer of p-conductivity type, a first electrode electrically connected to the ... | 04/19/2011 |
| 7919784 | Semiconductor light-emitting device and method for making same One embodiment of the present invention provides a semiconductor light-emitting device, which comprises: an upper cladding layer; a lower cladding layer; an active layer between the upper and lower cladding layers; an upper ohmic-contact layer forming a conductive p... | 04/05/2011 |
| 7915624 | III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the secon... | 03/29/2011 |
| 7915625 | Semiconductor light emitting device Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a curren... | 03/29/2011 |
| 7902562 | Light emitting diode device that includes a three dimensional cloud structure and manufacturing method thereof A light-emitting diode device (LED) device and manufacturing methods thereof are provided, wherein the LED device comprises a substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an... | 03/08/2011 |
| 7902561 | Nitride semiconductor light emitting device The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit ... | 03/08/2011 |
| 7893446 | Nitride semiconductor light-emitting device providing efficient light extraction A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate succe... | 02/22/2011 |
| 7893447 | Nitride-based semiconductor light emitting diode A nitride-based semiconductor LED includes a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor... | 02/22/2011 |
| 7888693 | Semiconductor light emitting device and method for manufacturing the same Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped se... | 02/15/2011 |
| 7888692 | Single photon source Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to locali... | 02/15/2011 |
| 7884380 | Semiconductor light emitting device This invention discloses a light emitting semiconductor device including a light-emitting structure and an external optical element. The optical element couples to the light-emitting structure circumferentially. In addition, the refractive index of the external opti... | 02/08/2011 |
| 7884381 | Light emitting device and method for fabricating the same including a back surface electrode with an Au alloy A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one su... | 02/08/2011 |
| 7880186 | III-nitride light emitting device with double heterostructure light emitting region In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm... | 02/01/2011 |
| 7872269 | Gallium nitride semiconductor light emitting element Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer an... | 01/18/2011 |
| 7872268 | Substrate buffer structure for group III nitride devices A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the alumi... | 01/18/2011 |
| 7834367 | Low voltage diode with reduced parasitic resistance and method for fabricating A method of making a diode begins by depositing an AlxGa1−xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n− GaN layer, an AlxGa1−xN barrier layer, and an SiO2 dielectric... | 11/16/2010 |
| 7834368 | Light-emitting diode having additional stack structure A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-t... | 11/16/2010 |
| 7834366 | Semiconductor device having a group III nitride semiconductor layer A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III... | 11/16/2010 |
| 7816695 | Light emitting device and method of forming the same An embodiment of present invention discloses a light-emitting device comprising a first multi-layer structure comprising a first lower layer; a first upper layer; and a first active layer able to emit light under a bias voltage and positioned between the first lower... | 10/19/2010 |
| 7812357 | LED having vertical structure and method for fabricating the same A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers fo... | 10/12/2010 |
| 7804100 | Polarization-reversed III-nitride light emitting device A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded... | 09/28/2010 |
| 7795631 | Light-emitting device A light-emitting device, including a compound semiconductor layer disposed on a substrate, includes a light-emitting layer, and a dielectric constant change structure formed in a part of the compound semiconductor layer including a main surface as a light extraction... | 09/14/2010 |
| 7795630 | Semiconductor device with oxidized regions and method for fabricating the same A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a react... | 09/14/2010 |
| 7791091 | Semiconductor light-emitting device, light-emitting module and lighting unit A semiconductor light-emitting device (1) includes a semiconductor multilayer film (11), a base material (12) for supporting the semiconductor multilayer film (11), a first feed terminal (17a), and a second feed terminal ( | 09/07/2010 |
| 7781785 | Light emitting diode with plated substrate and method for producing the same The present invention discloses a light emitting diode having a mirror and a permanent substrate plated thereon. The present invention also discloses a method for producing such light emitting diode. The permanent substrate and the mirror are formed after both elect... | 08/24/2010 |
| 7781786 | Semiconductor device having a heterojunction diode and manufacturing method thereof Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heteroju... | 08/24/2010 |
