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| Number | Title | Issue Date |
| 5942797 | Power semiconductor module A power semiconductor module in which a plurality of power semiconductor elements forming a bridge circuit are provided together with control circuits. The module includes a common casing which accommodates a metal base, a main circuit section, and a cont... | 08/24/1999 |
| 5929519 | Semiconductor module including switching device chips and diode chips An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, hi... | 07/27/1999 |
| 5821618 | Semiconductor component with insulating housing A semiconductor component includes an insulating housing. A plurality of sheet-metal mounting plates are disposed in one and the same plane and are electrically separated from one another in the housing. Semiconductor switches of a rectifier bridge are el... | 10/13/1998 |
| 5773885 | Thermally responsive compressive diode assembly A power rectifier has a diode blank sandwiched between a pair of contacts which apply progressive compressive loads upon the diode blank as the temperature of the diode assembly increases. Preferably, the contacts are formed from dissimilar metals having ... | 06/30/1998 |
| 5731606 | Reliable edge cell array design Techniques are provided for protecting the cells of an array against deleterious effects of, for example, photolithography, etching and charge contamination. The cell array is designed to have edge cells modified at layout, or inactive edge cells, or guar... | 03/24/1998 |
| 5592022 | Fabricating a semiconductor with an insulative coating An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit... | 01/07/1997 |
| 5589708 | Radiation hard integrated circuits with implanted silicon in gate oxide layer, field oxide region, and interlevel dielectric layer A method is provided for forming a radiation hard dielectric region of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A field oxide region, a gate oxide layer and an interlevel dielectric layer are formed over ... | 12/31/1996 |
| 5512782 | Semiconductor device for DC/AC converter A semiconductor device for converting DC input power to AC output power includes a package having a rectangular shape with four side edges and containing a plurality of semiconductor chips therein. Two pairs of positive and negative terminals of DC input ... | 04/30/1996 |
| 5506441 | Semiconductor device having pair of transistors A semiconductor device includes a plurality of groups of transistor elements which are formed on a single semiconductor chip, each group having a first pair of transistor elements which are arranged so as to be symmetrical about a point and a second pair ... | 04/09/1996 |
| 5391919 | Semiconductor power module with identical mounting frames A semiconductor device module is formed of four identical frame sections which each have a flat base and perpendicularly extending strap terminal. Semiconductor chips are soldered to the center of the top surfaces of each base, and the devices are interco... | 02/21/1995 |
| 5296731 | Semiconductor integrated circuit device with alpha rays resistance A semiconductor integrated circuit device according to the present invention includes a semiconductor layer of a first conductivity type having a high concentration of impurity atoms which layer is formed in or on predetermined locations of a semiconducto... | 03/22/1994 |
| 5278430 | Complementary semiconductor device using diamond thin film and the method of manufacturing this device A complementary semiconductor device incorporating semiconductor composed of diamond. Substantially, diamond is insulative. When both III group elementary atoms and V group elementary atoms are doped into diamond, the doped regions respectively turn into ... | 01/11/1994 |
| 5109259 | Multiple DRAM cells in a trench A multiple DRAM cell trench structure provides increased cell capacitance. A deep trench (18) is formed in a P+ semiconductor substrate (10), with sufficient trench width to prevent the tapered trench sidewalls from pinching off at the bottom thereof. Plu... | 04/28/1992 |
| 5040035 | MOS devices having improved threshold match In certain circuits, it is desirable to match the electrical characteristics, (e.g., thresholds), of two (or more) MOS transistors. For example, in an ECL output buffer, a first transistor is a voltage reference, and a second transistor is an output buffe... | 08/13/1991 |
| 4929998 | Integrated circuit having plural capacitances of different values An integrated circuit includes capacitances of different capacitance values, this circuit having rows of basic capacitances, while the capacitances have different numbers of basic capacitances connected in parallel between a first connection electrode and... | 05/29/1990 |
| 4849805 | Radiation hardened integrated circuit and method of making the same A SOI integrated circuit includes a plurality of islands of single crystalline silicon on a surface of a substrate of an insulating material. Each of the silicon islands contains an electrical component, such as a MOS transistor. A layer of silicon oxide ... | 07/18/1989 |
| 4831431 | Capacitance stabilization An integrated circuit using interconnection of opposite plates of multiple capacitors formed therein to stabilize composite capacitor parameters.... | 05/16/1989 |
| 4731642 | Semiconductor memory device with means to prevent word line breakage A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is ... | 03/15/1988 |
| 4659920 | Image sensor arrays with series redundancy In the particular embodiments of the invention disclosed in the specification, a closely spaced sensor array has two or three adjacent rows of sensor elements arranged to be connected so that if there is a defective sensor element in one row, an output si... | 04/21/1987 |
| 4589002 | Diode structure A diode structure is disclosed wherein the diode includes a body of a first type conductivity material; a first region of a second conductivity material in the body and having an opening therein through which a portion of the body projects; and a second r... | 05/13/1986 |
| 4484212 | Semiconductor device A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor ... | 11/20/1984 |
| 4423434 | Semiconductor device having two or more semiconductor elements with paired characteristics regularly arranged in a semiconductor substrate Semiconductor elements are arranged in a semiconductor substrate substantially equidistantly of a dicing line and oriented in the same direction. A region where the semiconductor elements are regularly arranged is the one where, when the semiconductor sub... | 12/27/1983 |
| 4398207 | MOS Digital-to-analog converter with resistor chain using compensating "dummy" metal contacts An MOS integrated circuit digital-to-analog converter employing a plurality of generally parallel resistance strings. Decoding means and switching means provide an analog output from the resistance strings, this output passes through only two switches. Th... | 08/09/1983 |
| 4161742 | Semiconductor devices with matched resistor portions In an integrated circuit semiconductor device different matched resistors are provided by at least one resistor comprising at least two matched resistor parts connected together, these resistor parts also being matched to each constituent resistor part of... | 07/17/1979 |
