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Class 257/92 - Alphanumeric segmented array


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein the plural light emitting devices
No. of patents: 48
Last issue date: 05/13/2008


1    
NumberTitleIssue Date
7372066Gallium nitride compound semiconductor device and manufacturing method
A light-emitting element using GaN. On a substrate (10), formed are an SiN buffer layer (12), a GaN buffer layer (14), an undoped GaN layer (16), an Si-doped n-GaN layer (18), an SLS layer (20), an undoped GaN layer (22
05/13/2008
7373114Signal transmission circuit, signal output circuit and termination method of signal transmission circuit
This invention provides a signal transmission circuit, a signal output circuit, and a termination method of a signal transmission circuit capable of preventing the re-reflection of the signal at a transmitting node of a transmission path even when an impedance of a ...
05/13/2008
7335985Method and system for electrically coupling a chip to chip package
A chip and a chip package can transmit information to each other by using a set of converters capable of communicating with each other through the emission and reception of electromagnetic signals. Both the chip and the chip package have at least one such converter ...
02/26/2008
7321145Method and apparatus for operating nonvolatile memory cells with modified band structure
A nonvolatile memory cell with a charge storage structure is read by measuring current (such as band-to-band current) between the substrate region of the memory cell and at least one of the current carrying nodes of the memory cell. To enhance the operation of the n...
01/22/2008
7271421Light-emitting diode array
A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first e...
09/18/2007
7242029Light emitting device
A light emitting element array is made with large light emitting elements and small light emitting elements are arranged on a substrate in a matrix-like form. The large light emitting element has the luminescent area of about 1 mm square. There is a clearance N1
07/10/2007
7221006GeSOI transistor with low junction current and low junction capacitance and method for making the same
A semiconductor device (101) is provided herein which comprises a substrate (103) comprising germanium. The substrate has source (107) and drain (109) regions defined therein. A barrier layer (111) comprising a first material that ...
05/22/2007
7193322Sacrificial shallow trench isolation oxide liner for strained-silicon channel CMOS devices
A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method forms a Si substrate with a relaxed-SiGe layer overlying the Si substrate, or a SiGe on insulator (SGOI) substrate wit...
03/20/2007
7170152Wafer level semiconductor package with build-up layer and method for fabricating the same
A wafer level semiconductor package with a build-up layer is provided, which includes a glass frame having a through hole for receiving a semiconductor chip therein, a low-modulus buffer material filled within the space formed between the semiconductor chip and the ...
01/30/2007
7112825Semiconductor light emitting device
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface while a current diffusing elect...
09/26/2006
7091525Apparatus for producing a display unit
A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by t...
08/15/2006
7079677Automatic intelligent yield improving and process parameter multivariate system and the analysis method thereof
An automatic intelligent yield improving and process parameter multivariate analysis system and the analysis method thereof. The system is applied to a computer to set up analysis procedures for analyzing process parameters obtained from each measuring machine in se...
07/18/2006
7038594Led driver current amplifier
A circuit powering an electrical device based on a commanded current signal is provided. The circuit includes a linear current amplifier which sets a desired current flow. The circuit also dynamically controls a supply voltage in order to minimize power dissipation ...
05/02/2006
7019331Green light-emitting microcavity OLED device using a yellow color filter element
An OLED device having green emitting regions disposed over a substrate, and wherein each green emitting region includes one or more light-emitting layer(s), a reflector and a semitransparent reflector respectively disposed on opposite sides of the light-emitting lay...
03/28/2006
7009287Chip on photosensitive device package structure and electrical connection thereof
A chip on photosensitive device package structure is provided. The package mainly comprises a photosensitive device, a transparent plate and a chip. The photosensitive device has an illumination area and a non-illumination area. The transparent plate has a first sur...
03/07/2006
6992333Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
A number of red LEDs, green LEDs, and blue LEDs are mounted on one surface of a polygonal flexible multilayer substrate. The LEDs are connected in series according to color. A red feeder terminal, a green feeder terminal, a blue feeder terminal, and a common termina...
01/31/2006
6891200Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
A number of red LEDs, green LEDs, and blue LEDs are mounted on one surface of a polygonal flexible multilayer substrate. The LEDs are connected in series according to color. A red feeder terminal, a green feeder terminal, a blue feeder terminal, and a common termina...
05/10/2005
6872966Optical semiconductor device
There are provided first and second optical waveguides formed on a semiconductor substrate and having upper clad layers and core layers that are separated mutually respectively, first and second phase modulation electrodes formed on the first and second optical wave...
03/29/2005
6858875Light-emitting-element array
A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench divides the semiconductor layer...
02/22/2005
6828595Light shield cum gap fill scheme for microdisplay backplane fabrication
A light shield apparatus and formation method for preventing the transmission of incident light towards active devices of the display. In one embodiment, the present invention recites forming a plurality of metal pixels wherein adjacent ones of the plurality of meta...
12/07/2004
6822267Signal transmission circuit, CMOS semiconductor device, and circuit board
A signal transmission circuit, a CMOS semiconductor device, and a circuit board improve the signal transmission characteristic of a signal line having a large capacitance that is generated on the long signal line inside a large-scale integrated circuit when the sign...
11/23/2004
6806506Semiconductor device having leads provided with interrupter for molten resin
A semiconductor device includes semiconductor elements, a housing for accommodating the semiconductor elements, a resin material arranged in the housing for enclosing the semiconductor elements, and leads connected to the semiconductor elements. Each lead is divided...
10/19/2004
6791150Optical module and optical transceiver apparatus
A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surface are disposed on the same pl...
09/14/2004
6785311Optical semiconductor device
An optical semiconductor device comprising: an active region; and a p-doped cladding region disposed on one side of the active region; wherein an electron-reflecting barrier is provided on the p-side of the active region for reflecting both Γ-electrons and X-electr...
08/31/2004
6765235Array of semiconductor elements with paired driving scheme
A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pads, each connected to two sem...
07/20/2004
6753214Photodetector with isolation implant region for reduced device capacitance and increased bandwidth
A PIN photodetector includes reduced parasitic capacitance and is suitable for high-speed applications. Metal interconnect leads are coupled to the photodetector and extend over electrically insulating regions which reduce or eliminate parasitic capacitance. The ele...
06/22/2004
6746884Method of manufacturing field-emission electron emitters and method of manufacturing substrates having a matrix electron emitter array formed thereon
In a method of manufacturing matrix electron emitter arrays, each array comprising a plurality of scanning lines formed on a glass substrate and arranged in parallel with each other, a plurality of signal lines formed in a direction to cross the scanning lines and a...
06/08/2004
6710376Opto-coupler based on integrated forward biased silicon diode LED
This invention discloses the basic chip architecture and packing configuration required to build an all silicon opto-coupler in which a forward biased silicon PN junction diode is used as the LED. Construction of the LED and the detector are disclosed as well as the...
03/23/2004
6479839III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer
A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g...
11/12/2002
6433367Semiconductor device with sloping sides, and electronic apparatus including semiconductor devices with sloping sides, modified for crack-free wire bonding
A semiconductor device has a first surface with at least one wire bonding pad, a second surface located opposite to the first surface, and at least one side sloping inward from the first surface to the second surface. According to a first aspect of the in...
08/13/2002
6429461Surface light emitting devices
It is an object of the present invention to provide a surface light-emitting device that can realize a lightweight and compact-profile optical input/output device with reasonable price, especially the one that emits light. The beam generator 12 comprises ...
08/06/2002
6417524Light emitting semiconductor device
Light emitting diodes each comprising a body of semiconductor material having a first side surface, a second side surface, and a top surface; and a stripe of conductive material over the top surface of the body. The stripe has a first segment and a second...
07/09/2002
6211537LED array
A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed therein and aligned in ...
04/03/2001
5926375Surface mounting structure
A circuit board is provided with blind connection vias which are filled with solder. The end portions of the pins of an electronic component are inserted into the connection vias, and are connected to the connection vias by solder. The electronic componen...
07/20/1999
5757026Multicolor organic light emitting devices
A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or sim...
05/26/1998
5449926High density LED arrays with semiconductor interconnects
A high density LED array with semiconductor interconnects includes a plurality of layers of material stacked on a substrate including a conductive layer, a first carrier confinement layer, an active layer, and a second carrier confinement layer. The layer...
09/12/1995
5357123Light emitting diode array with dovetail
A light emitting diode array has light emitting dots arranged in a line and is characterized in that a semiconductor substrate of a chip constituting the light emitting diode array has a Dovetail grooved mesa shape on a chip end face opposed to an adjacen...
10/18/1994
5173759Array of light emitting devices or photo detectors with marker regions
In an optical printer head or image reading apparatus, light emitting diodes, photo detectors and other picture elements are formed, by a specified number of pieces individually, as picture element arrays, and these arrays are linearly arranged. The dista...
12/22/1992
4902641Process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded to the nitride lay...
02/20/1990
4893169Lead frame and a process for the production of a lead with this lead frame
A lead frame adapted for a plurality of semiconductor chips in which, for each semiconductor chip, at least one electric terminal is extended out of the package after encapsulation of the lead frame. In addition, a process for the production of a lead wit...
01/09/1990
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