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| Number | Title | Issue Date |
| 7405092 | Method of manufacturing electron-emitting device and method of manufacturing image display apparatus A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disp... | 07/29/2008 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7095041 | High-efficiency light emitting diode A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode formed on a region of the first compound semiconductor layer; an act... | 08/22/2006 |
| 7095042 | Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron injection layer having first and ... | 08/22/2006 |
| 7064359 | Switching semiconductor device and switching circuit A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where 0≦x≦1; a second compound layer formed on the ... | 06/20/2006 |
| 7057212 | Flip chip nitride semiconductor light emitting diode In a nitride semiconductor LED, an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride semiconductor layer is formed on the active layer. A high reflectivit... | 06/06/2006 |
| 7057214 | Light-activated semiconductor switches Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of differen... | 06/06/2006 |
| 7034331 | Material systems for semiconductor tunnel-junction structures The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor m... | 04/25/2006 |
| 7030414 | III group nitride compound semiconductor luminescent element A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well la... | 04/18/2006 |
| 7026653 | Semiconductor light emitting devices including current spreading layers III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current s... | 04/11/2006 |
| 7019323 | Semiconductor light emitting device A semiconductor light emitting device is formed by adhering a semiconductor layered portion having a light emitting layer forming portion to a conductive substrate via a metal layer. The metal layer has at least a first metal layer for ohmic contact with the semicon... | 03/28/2006 |
| 6995401 | Light emitting device and method of fabricating the same A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. ... | 02/07/2006 |
| 6956240 | Light emitting device In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an orga... | 10/18/2005 |
| 6933588 | High performance SCR-like BJT ESD protection structure In a NPN transistor electrostatic discharge (ESD) protection structure, certain parameters, including maximum lattice temperature, are improved by introducing certain process changes to provide for SCR-like characteristics during ESD events. A p+region is formed adj... | 08/23/2005 |
| 6919584 | White light source A colorless light approaching that of white light in nature, is produced by using a blue color LEDs and a green color LED are covered with a red color phosphorescent glue and a yellow phosphorescent glue in separate layers or a mixed layer. ... | 07/19/2005 |
| 6914262 | White light emitting diode and method for manufacturing the same Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first... | 07/05/2005 |
| 6911674 | Feedback and coupling structures and methods A light emitting device may include a light emitting layer such as an organic semiconductor material, one or more feedback structures, and a coupling structure. The one or more feedback structures may cause light emitted by the light emitting layer to be fed back th... | 06/28/2005 |
| 6897139 | Group III nitride compound semiconductor device A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to t... | 05/24/2005 |
| 6875629 | III group nitride based semiconductor element and method for manufacture thereof A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystalli... | 04/05/2005 |
| 6869814 | Silicon-based ultra-violet LED A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein,... | 03/22/2005 |
| 6861672 | Semiconductor light emitting element and method for fabricating the same The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer. ... | 03/01/2005 |
| 6853007 | Submount for vertical cavity surface emitting lasers and detectors A semiconductor assembly having a submount with a plurality of conductive traces. A semiconductor array, such as a VCSEL array or a detector array, is attached to the submount. A plurality of conductive vias pass through the submount's body, or a conductive trace is... | 02/08/2005 |
| 6849861 | Electronic device and electronic apparatus Performance of an electronic device is highly improved by epitaxially growing a perovskite-type oxide thin film on an inorganic amorphous layer or an organic solid layer in a desired direction; and furthermore, a high performance electronic device is provided by inc... | 02/01/2005 |
| 6847052 | Light-emitting diode device geometry A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extendin... | 01/25/2005 |
| 6835950 | Organic electronic devices with pressure sensitive adhesive layer An organic electronic device structure, according to a first aspect of the invention, includes: (a) a substrate layer; (b) an organic electronic region disposed over the substrate layer; (c) a pressure sensitive adhesive layer disposed over the organic electronic de... | 12/28/2004 |
| 6825500 | Light-emitting thyristor and self-scanning light-emitting device A light-emitting thyristor having an improved luminous efficiency is provided. According to the light-emitting thyristor, a p-type AlGaAs layer and an n-type AlGaAs layer are alternately stacked to form a pnpn structure on a GaAs buffer layer formed on a GaAs substr... | 11/30/2004 |
| 6794731 | Minority carrier semiconductor devices with improved reliability A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, whic... | 09/21/2004 |
| 6794686 | White light source A colorless light approaching that of white light in nature, is produced by using no more than two color LEDs covered with one or more layers of complementary color phosphorescent glue on an insulating substrate. ... | 09/21/2004 |
| 6765238 | Material systems for semiconductor tunnel-junction structures The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor m... | 07/20/2004 |
| 6759686 | Silicon-based ultra-violet LED A light emitting diode (LED), and a method for producing the same. The LED includes a substrate that may be made of silicon, a first conductive layer on one side, and a porous insulating layer on the opposite side. The insulating layer defines microcavities therein,... | 07/06/2004 |
| 6753552 | Growth-selective structure of light-emitting diode A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN la... | 06/22/2004 |
| 6737679 | Optoelectronic unit and transparent conductive substrate of the same An optoelectronic unit and a transparent conductive substrate of the same are disclosed. The transparent conductive substrate comprises a transparent plate, a transparent electrode film, an insulation part, and a bounding pad, wherein the transparent electrode film ... | 05/18/2004 |
| 6734462 | Silicon carbide power devices having increased voltage blocking capabilities A structure and method for a voltage blocking device comprises a cathode region, a drift region positioned on the cathode region, a gate region positioned on the drift region, an anode region positioned on the gate region and a plurality of contacts positioned on ea... | 05/11/2004 |
| 6703677 | Submount integrated photodiode and laser diode package using the same Disclosed is a submount integrated photodiode package with an improved metal layer configuration and laser diode package using the same. In particular, a unitary laser diode of the invention provides a light receiving area overlying a semiconductor substr... | 03/09/2004 |
| 6696703 | Thin film phosphor-converted light emitting diode device The present invention provides a phosphor-converted LED device comprising one or more phosphor thin films that convert primary light emitted by the LED into one or more other wavelengths of light to produce light of a particular color. Each phosphor thin ... | 02/24/2004 |
| 6667496 | Optical semiconductor apparatus, and its fabrication method The optical semiconductor apparatus is provided with a surface light-emitting device and a surface light-receiving device, and includes an active layer, a first spacer layer, and a first semiconductor multi-layer mirror. The active layer, the first spacer... | 12/23/2003 |
| 6661028 | Interface texturing for light-emitting device The present invention discloses a light-emitting device (LED) with a textured interface formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternativ... | 12/09/2003 |
| 6657233 | Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in t... | 12/02/2003 |
