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| Number | Title | Issue Date |
| 7405482 | High-k dielectric film, method of forming the same and related semiconductor device A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first ... | 07/29/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7368823 | Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) formin... | 05/06/2008 |
| 7247924 | Method of controlling grain size in a polysilicon layer and in semiconductor devices having polysilicon structures A method of modulating grain size in a polysilicon layer and devices fabricated with the method. The method comprises forming the layer of polysilicon on a substrate; and performing an ion implantation of a polysilicon grain size modulating species into the polysili... | 07/24/2007 |
| 7235853 | Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film A fingerprint detection device has a fingerprint sensor chip and a diamond-like carbon (DLC) film covering the outermost surface of the sensor chip. The DLC film provides sufficient strength and enhanced electrostatic discharge withstand voltage to the fingerprint s... | 06/26/2007 |
| 7042095 | Semiconductor device including an interconnect having copper as a main component Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and ... | 05/09/2006 |
| 7034409 | Method of eliminating photoresist poisoning in damascene applications A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectri... | 04/25/2006 |
| 6960790 | Fingerprint detection device and method of its manufacture, and apparatus for forming a protective film A fingerprint detection device has a fingerprint sensor chip and a diamond-like carbon (DLC) film covering the outermost surface of the sensor chip. The DLC film provides sufficient strength and enhanced electrostatic discharge withstand voltage to the fingerprint s... | 11/01/2005 |
| 6737168 | Composite material and semiconductor device using the same A composite material that consists mainly of ceramic and semi-metal, that is high in thermal conductivity, that is light in weight, and that has high compatibility in coefficient of thermal expansion (CTE) with a semiconductor element and another member comprising c... | 05/18/2004 |
| 6730984 | Increasing an electrical resistance of a resistor by oxidation or nitridization A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. ... | 05/04/2004 |
| 6667523 | Highly linear integrated resistive contact A semiconductor device or integrated circuit has high and low resistive contacts. Mobility spoiling ions such as carbon are implanted into all contacts of the substrate. High resistive contacts are temporarily covered with an oxide during processing to pr... | 12/23/2003 |
| 6653719 | Silicone polymer insulation film on semiconductor substrate A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has --SiR2 O-- repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor subst... | 11/25/2003 |
| 6635950 | Semiconductor device having buried boron and carbon regions, and method of manufacture thereof To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 10/21/2003 |
| 6633082 | Semiconductor device and method for manufacturing the semiconductor device A semiconductor device is provided and contains a substrate, a first wiring layer, a first oxide film, a dielectric film, a first nitrogen layer, a second wiring layer, a via hole, and a second nitrogen layer. The first wiring layer is formed on the subst... | 10/14/2003 |
| 6525384 | Conductor layer nitridation Methods and apparatus for forming word line stacks comprise forming a thin nitride layer coupled between a bottom silicon layer and a conductor layer. In a further embodiment, a diffusion barrier layer is coupled between the thin nitride layer and the bot... | 02/25/2003 |
| 6489654 | Silicon-on-insulator (SOI) substrate There is provided a method of fabricating a silicon-on-insulator substrate, including the steps of (a) forming a silicon substrate at a surface thereof with an oxygen-containing region containing oxygen at such a concentration that oxygen is not precipita... | 12/03/2002 |
| 6297533 | LDMOS structure with via grounded source A lateral conduction MOS structure characterized by reduced source resistance and reduced pitch. The structure includes a semiconductor substrate having an epitaxial semiconductor layer thereon, the substrate and epitaxial layer being of the same conducti... | 10/02/2001 |
| 6271566 | Semiconductor device having a carbon containing insulation layer formed under the source/drain A manufacturing method produces a semiconductor IC device which can maintain a low power consumption for electronic circuits and form gate-isolation layers of different thicknesses without increasing the manufacturing cost. The semiconductor IC device has... | 08/07/2001 |
| 6235559 | Thin film transistor with carbonaceous gate dielectric A gate dielectric layer comprising a carbon film aligned to, and continuously covering, the gate electrode. The carbon dielectric film adheres to a wide variety of gate metals and is readily etched using etch processes which do not etch into the gate meta... | 05/22/2001 |
| 6198157 | Semiconductor device having buried boron and carbon regions To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 03/06/2001 |
| 6188101 | Flash EPROM cell with reduced short channel effect and method for providing same Reduction in the short channel effect of a Flash EPROM cell is described. A method includes forming a gate structure on a substrate structure, and performing a nitrogen implant. Further included is performing device doping, wherein the nitrogen implant in... | 02/13/2001 |
| 6144094 | Semiconductor device including an insulation film and electrode having nitrogen added thereto A semiconductor device comprising: a silicon substrate having a primary plane; an insulation film formed on the primary plane of the silicon substrate by subjecting the silicon substrate to thermal oxidation in an atmosphere of a gas of N2 O or a mi... | 11/07/2000 |
| 6059553 | Integrated circuit dielectrics An integrated circuit with an intermetal level dielectric (IMD) including an organic-silica hybrid (110) and located between metal lines (104).... | 05/09/2000 |
| 5959333 | Reduction of dopant diffusion by the co-implantation of impurities into the transistor gate conductor Diffusion of dopants within the gate of the transistor and/or the source/drain regions can be inhibited by the ion co-implantation of impurities in addition to the ion implantation of the n-type or p-type dopants. Implanting a combination of nitrogen and ... | 09/28/1999 |
| 5936287 | Nitrogenated gate structure for improved transistor performance and method for making same An integrated circuit fabrication method incorporating nitrogen into the polysilicon-dielectric interface in an MOS transistor. A semiconductor substrate having a P-well region and an N-well region is provided. Each well region includes channel regions an... | 08/10/1999 |
| 5923071 | Semiconductor device having a semiconductor film of low oxygen concentration A semiconductor substrate having a silicon-on-insulator structure may achieve superior performance by utilizing a low oxygen content monocrystalline silicon thin film layer for device formation. A supporting substrate, which may comprise a transparent mat... | 07/13/1999 |
| 5874772 | Semiconductor device A semiconductor device is obtained in which initial breakdown voltage of an insulating film is improved. On a silicon substrate, an insulating film is provided which is not more than 100 Å in thickness. An electrode is provided on the silicon substrate, ... | 02/23/1999 |
| 5801425 | Semiconductor device having a wiring layer including a TISI2, film of the C49 or C54 structure A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another ... | 09/01/1998 |
| 5648673 | Semiconductor device having metal silicide film on impurity diffused layer or conductive layer A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a s... | 07/15/1997 |
| 5635746 | Semiconductor device comprising a salicide structure After formation a gate electrode and source/drain regions, N ions or O ions are implanted into a predetermined region using a resist mask, and a Ti layer is deposited on the entire face of a substrate, and then the Ti layer is silicided in self-alignment ... | 06/03/1997 |
| 5600154 | Thin film transistor with particular nitrogen concentration According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using... | 02/04/1997 |
| 5594263 | Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" semiconductor is a na... | 01/14/1997 |
| 5581092 | Gate insulated semiconductor device In order to provide TFTs having a low leak current property in its reverse biased state, the active semiconductor layer of the TFTs is doped with an impurity for increasing the band gap thereof, for example, carbon, nitrogen, and oxygen. Also, in order to... | 12/03/1996 |
| 5514902 | Semiconductor device having MOS transistor A semiconductor device which can effectively prevent impurity diffusion in heat treatment for electrically activating the impurity, and a manufacturing method thereof are disclosed. In the semiconductor device, a diffusion preventing layer having a depth ... | 05/07/1996 |
| 5479031 | Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value An overvoltage protection device having multiple shorting dots in the emitter region and multiple buried regions substantially aligned with these shorting dots. The placement, number, and area of these buried regions reduce and more accurately set the ove... | 12/26/1995 |
| 5338968 | Method of forming isolated regions of oxide A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over the integrated circuit. A nitrogen doped polysilicon layer is formed over the pad... | 08/16/1994 |
| 5332919 | Photodetector with surrounding region This invention relates to a photodetector including a package having a window disposed in a light incident part, and a light detecting element installed in the package. The light detecting element includes a first region formed of a second conduction-type... | 07/26/1994 |
| 5313077 | Insulated gate field effect transistor and its manufacturing method A thin film transistor including a semiconductor layer including a non-single crystalline silicon layer formed on an insulating surface of a substrate; a gate electrode formed on the semiconductor layer; a gate insulating film disposed between the gate el... | 05/17/1994 |
| 5309002 | Semiconductor device with protruding portion Between electrodes (9) and (10) are formed a p+ substrate (2), an n- epitaxial layer (1) having a protruding portion (3), an n+ diffusion region (4) and p+ diffusion regions (13). Control electrodes (6) are form... | 05/03/1994 |
| 5302840 | HEMT type semiconductor device having two semiconductor well layers A HEMT type semiconductor device includes a semiconductor substrate, a buffer semiconductor layer formed on the substrate, a first semiconductor well layer formed on the buffer layer and serving as a first conductivity type channel layer, a second semicon... | 04/12/1994 |
