Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7397063 | Semiconductor device A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon l... | 07/08/2008 |
| 7341923 | Substrate, manufacturing method therefor, and semiconductor device A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the b... | 03/11/2008 |
| 7342290 | Semiconductor metal contamination reduction for ultra-thin gate dielectrics A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom ... | 03/11/2008 |
| 7250628 | Memory devices and electronic systems comprising thyristors The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and SRAM-like performance. The memory cell includes an access transistor and a g... | 07/31/2007 |
| 7242037 | Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices An electronic power device comprising a single crystal silicon segment being characterized in that the segment comprises a non-uniform distribution of minority carrier recombination centers, the minority carrier recombination centers comprising a substitutional meta... | 07/10/2007 |
| 7164183 | Semiconductor substrate, semiconductor device, and method of manufacturing the same A semiconductor device includes a porous layer, a structure which is formed on the porous layer and has a semiconductor region whose height of the sectional shape is larger than the width, and a strain inducing region which strains the structure by applying stress t... | 01/16/2007 |
| 7141822 | Semiconductor device and method for manufacturing the same The TFT electric characteristic is ready to be influenced by the channel region in the neighborhood of an interface between a semiconductor and a gate insulating film. The present invention provides TFTs reduced in electric characteristic deviations and a method for... | 11/28/2006 |
| 7126194 | Method for removing impurities of a semiconductor wafer, semiconductor wafer assembly, and semiconductor device On a silicon layer of an SOI wafer is defined a semiconductor device-forming region to form semiconductor devices thereon and an insulating region to electrically insulate the semiconductor device-forming region. Then, a mask layer is formed of nitride by means of p... | 10/24/2006 |
| 7045418 | Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor The present invention provides a semiconductor device (200), a method of manufacture therefor and an integrated circuit including the same. In one embodiment of the invention, the semiconductor device (200) includes a floating gate (230) located... | 05/16/2006 |
| 7015507 | Thin film transistor and method of fabricating the same Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active layer made of a non-single-cry... | 03/21/2006 |
| 6998648 | Protected organic electronic device structures incorporating pressure sensitive adhesive and desiccant Organic electronic device structures are provided, which comprise: (a) a first portion comprising a substrate and an organic electronic device region (e.g., an OLED region) disposed over the substrate; (b) a second portion comprising a cover and a getter region; and... | 02/14/2006 |
| 6967391 | Electronic control device An electronic control device includes a power supply circuit, electronic circuits, a ground wiring pattern, and a common ground wiring pattern formed in a multi-layered substrate. The ground wiring pattern is dedicated for the power supply circuit and the common gro... | 11/22/2005 |
| 6946711 | Semiconductor device In a semiconductor device such as MOSFET, a single crystal semiconductor substrate is provided. An epitaxitial layer is formed on the single crystal semiconductor substrate. A p-well regions are formed on the epitaxitial layer, respectively, and n+ source... | 09/20/2005 |
| 6828690 | Non-uniform minority carrier lifetime distributions in high performance silicon power devices A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, ... | 12/07/2004 |
| 6709955 | Method of fabricating electronic devices integrated in semiconductor substrates provided with gettering sites, and a device fabricated by the method A method of fabricating electronic devices, integrated monolithically in a semiconductor substrate having at least one non-active area contiguous with at least one device active area, which method comprises at least one step of implanting ions of a noble gas, follow... | 03/23/2004 |
| 6635950 | Semiconductor device having buried boron and carbon regions, and method of manufacture thereof To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 10/21/2003 |
| 6465873 | Semiconductor gettering structures The present invention relates to the formation of multiple gettering structures within a semiconductive substrate by ion implantation through recesses in the semiconductive substrate. A preferred embodiment of the present invention includes forming the re... | 10/15/2002 |
| 6452219 | Insulated gate bipolar transistor and method of fabricating the same An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a w... | 09/17/2002 |
| 6452271 | Interconnect component for a semiconductor die including a ruthenium layer and a method for its fabrication A multi-layered metal bond pad for a semiconductor die having a conductive metal layer and an overlying ruthenium electrode layer. The ruthenium electrode layer protects the conductive metal from oxidation due to ambient environmental conditions. An inter... | 09/17/2002 |
| 6313507 | SOI semiconductor device capable of preventing floating body effect The present invention provides an SOI device preventing the floating body effect, and a method for manufacturing the same. Disclosed is a method comprising the steps of: forming an isolation layer on a first silicon substrate; forming a conductive layer o... | 11/06/2001 |
| 6300680 | Semiconductor substrate and manufacturing method thereof A semiconductor substrate is provided which maintains its gettering capabilities throughout the manufacturing process of a semiconductor device and which prevents previously gettered contaminating impurities from being released again into an operating reg... | 10/09/2001 |
| 6284384 | Epitaxial silicon wafer with intrinsic gettering This invention is directed to a novel a single crystal silicon wafer. The wafer comprises: (a) two major generally parallel surfaces (ie., the front and back surfaces); (b) a central plane between and parallel to the front and back surfaces; (c) a front s... | 09/04/2001 |
| 6271541 | Semiconductor device with high gettering capability to impurity present in semiconductor layer of SOI substrate A semiconductor device is provided which is capable of removing the heavy metal impurity in a SOI layer by gettering, and realizing an improvement in breakdown voltage and reliability. The semiconductor device comprises polysilicon regions functioning as ... | 08/07/2001 |
| 6255719 | Semiconductor device including thermal neutron absorption material A boron nitride inclusion sheet is applied on the surface of a mold package enclosing a semiconductor chip so as to prevent soft error caused by a thermal neutron.... | 07/03/2001 |
| 6252294 | Semiconductor device and semiconductor storage device A semiconductor device and a semiconductor storage device having an SOI structure and being enable sufficient gettering performance without imposing limitations on the freedom of design of an LSI circuit. A semiconductor device includes a semiconductor wa... | 06/26/2001 |
| 6236104 | Silicon on insulator structure from low defect density single crystal silicon The present invention relates to a silicon on insulator ("SOI") structure having a low defect density device layer and, optionally, a handle wafer having improved gettering capabilities. The device layer comprises a central axis, a circumferential edge, a... | 05/22/2001 |
| 6232205 | Method for producing a semiconductor device Disclosed is a simplified technique of introducing a metal element capable of promoting the crystallization of silicon into an amorphous silicon film to be crystallized, and of removing the metal element from the film. An amorphous silicon film 102 is for... | 05/15/2001 |
| 6229196 | Semiconductor device and fabrication method thereof The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N- layer (105) laid one on top of ... | 05/08/2001 |
| 6222252 | Semiconductor substrate and method for producing the same A semiconductor substrate is provided which can efficiently exhibit intrinsic gettering (IG) effect, is less likely to cause slipping or dislocation, and causes no significant lowering in mechanical strength. The semiconductor substrate has bulk micro def... | 04/24/2001 |
| 6198157 | Semiconductor device having buried boron and carbon regions To improve the gettering performance by ion implanting boron and improves the production yield of the semiconductor device by using an epitaxial wafer of good quality suppressing the occurrence of dislocations. For this purpose, an epitaxial wafer in which an ... | 03/06/2001 |
| 6180220 | Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, and a central plane between the front and bac... | 01/30/2001 |
| 6120749 | Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. Th... | 09/19/2000 |
| 6066893 | Contaminant resistant barriers to prevent outgassing An integrated circuit comprises a dielectric layer disposed outwardly from a semiconductor substrate, the dielectric layer comprising at least one cavity having sidewalls extending from an outer surface of the dielectric layer inwardly toward the substrat... | 05/23/2000 |
| 5993493 | Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers Two or more processes selected from heat treatment for anihilation of oxygen donors, formation of a gettering region, and formation of a dopant-volatilization-prevention film are simultaneously performed in a common apparatus in accordance with the specif... | 11/30/1999 |
| 5994761 | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back su... | 11/30/1999 |
| 5973386 | Semiconductor substrate having silicon oxide layers formed between polysilicon layers On the back side of a base body, three layers of polysilicon layer are formed. These polysilicon layers contain boron. A boron concentration CB(1), CB(2) and CB(3) of the first, second and third polysilicon layers from the... | 10/26/1999 |
| 5973370 | Preventing boron penetration through thin gate oxide of P-channel devices in advanced CMOS technology A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon is implanted into the polysilicon gate electrode of the PMOS device functioning as a d... | 10/26/1999 |
| 5949115 | Semiconductor device including nickel formed on a crystalline silicon substrate In a MOS semiconductor device utilizing a crystalline silicon substrate, the formation of a parasitic channel is suppressed. A solution of nickel acetate is applied to a silicon substrate 101 to form a layer including nickel indicated by 102. Thermal oxid... | 09/07/1999 |
| 5939770 | Semiconductor device and its manufacturing method A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zo... | 08/17/1999 |
| 5929507 | Gettering regions and methods of forming gettering regions within a semiconductor wafer In one aspect, the invention pertains to a method of forming a gettering region within an Si semiconductor wafer, the method including: a) providing a semiconductor material wafer; b) providing a background region within the semiconductor material wafer, ... | 07/27/1999 |
