Bizarre Patents
An electrified table cloth for preventing crawling insects from gaining access to the consumer's food or drink.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7098492 | Thin film transistor having LDD region and process for producing same A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a seco... | 08/29/2006 |
| 6956240 | Light emitting device In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an orga... | 10/18/2005 |
| 6949765 | Padless structure design for easy identification of bridging defects in lines by passive voltage contrast A new test structure to locate bridging defects in a conductive layer of an integrated circuit device is achieved. The test structure comprises a line comprising a conductive layer overlying a substrate. The line is coupled to ground. A plurality of rectangles compr... | 09/27/2005 |
| 6707123 | EUV reflection mask In an EUV reflection mask which is set up for region-by-region exposure of a radiation-sensitive layer lying on a semiconductor wafer by means of radiation in the spectral region of extreme ultraviolet radiation, which radiation is reflected at the mask, patterns ar... | 03/16/2004 |
| 6703689 | Miniature optical element for wireless bonding in an electronic instrument A method of manufacturing an optical element including the steps of: forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and forming a conductive layer extending fr... | 03/09/2004 |
| 6476417 | Image-pickup semiconductor device having a lens, a light-receiving element and a flexible substrate therebetween with a shading plate blocking undesired light rays A semiconductor device for picking up an image includes a lens-mounting unit provided with a lens for picking up an image; a semiconductor chip having a light-receiving element formed on a circuit-forming surface thereof, the light-receiving element conve... | 11/05/2002 |
| 5329139 | Semiconductor integrated circuit device analyzable by using laser beam inducing current A semiconductor integrated circuit device is subjected to a non-contact and non-destructive analysis using a laser beam after fabrication process, and impurity regions are previously formed in an area assigned to wiring strips regardless of the circuit co... | 07/12/1994 |
| 5319228 | Semiconductor memory device with trench-type capacitor A semiconductor memory device having a trench-type capacitor configuration is provided. The device comprises an element isolation insulating film formed on the surface of the substrate in the vicinity of the trenches. The insulating film includes a thickn... | 06/07/1994 |
| 5250831 | DRAM device having a memory cell array of a divided bit line type A memory cell array (50) of a DRAM has a so-called divided bit line structure including two regions (50a and 50) divided from each other. One bit line (24) of a bit line pair is connected to a predetermined memory cell in a first memory cell array block (... | 10/05/1993 |
| 5072269 | Dynamic ram and method of manufacturing the same A semiconductor memory device includes a plurality of semiconductor pillar projections separated by grooves formed in longitudinal and transverse directions in a substrate and arranged in a matrix manner, a MOS capacitor and a MOSFET formed on side surfac... | 12/10/1991 |
| 5070388 | Trench-resident interconnect structure Interconnect metal is selectively provided in a network of trenches formed in the top surface of a semiconductor substrate containing multiple circuit devices, electrical contact to regions of which is to be provided. The trench network is formed so that ... | 12/03/1991 |
| 5057896 | Semiconductor device and method of producing same A semiconductor device comprises a semiconductor substrate having a pillar-like portion projecting upwardly from the main surface thereof and defining circumferential side walls and a top surface, a first insulating layer covering the circumferential side... | 10/15/1991 |
| 5006481 | Method of making a stacked capacitor DRAM cell A capacitor is formed for use with a DRAM storage cell by lying down alternating layers of polycrystalline silicon for the storage node and the ground plate. A buried bit line allows the capacitor area to cover a significant fraction of the cell layout ar... | 04/09/1991 |
| 4979013 | Semiconductor memory device A semiconductor memory device having a memory cell array of a folded bit line configuration comprises memory cells, two each of which are formed to share a contact hole and surrounded by an isolation trench, and data charge storage capacitance formed on t... | 12/18/1990 |
| 4967396 | Semiconductor integrated circuit device The present invention relates to a dynamic type RAM and, more particularly, to a dynamic type RAM formed using one-element type dynamic memory cells each comprised of a data storing capacitor and an address selecting MOSFET. Divided word lines are arrange... | 10/30/1990 |
| 4929990 | Semiconductor memory device A semiconductor memory device comprises a semiconductor substrate, four memory cells arranged in point symmetry on the main surface, each of the memory cells having one transistor (6) formed around the point of symmetry and one capacitor adjacent to the o... | 05/29/1990 |
| 4922313 | Process for manufacturing semiconductor memory device and product formed thereby A dynamic RAM having a memory cell constituted by a capacitor element, utilizing a trench or moat formed in a semiconductor substrate, and a MISFET. One of the electrodes of the capacitor element is connected to the MISFET constituting part of the memory ... | 05/01/1990 |
| 4894695 | Semiconductor device with no stress generated at the trench corner portion and the method for making the same The semiconductor device in which no stress occurs at the corner portion of the trench comprises a p type semiconductor substrate having a trench and a main surface, a thick insulating film formed on the bottom portion of the trench, a thin insulating fil... | 01/16/1990 |
| 4887136 | Semiconductor memory device and the method for manufacturing the same A dynamic semiconductor memory device comprising a substrate having one trench including two capacitors for memory cell capacitances of two bits, and two elements such as transistors for reading, writing, and storing information represented by charge, arr... | 12/12/1989 |
| 4887137 | Semiconductor memory device A semiconductor memory device comprises four memory cells (4a, 6) arranged in point symmetry on a semiconductor substrate (1), and an insulating layer (10) covering the memory cells and having one contact hole (2) placed in the center of the point symmetr... | 12/12/1989 |
| 4763178 | Semiconductor memory device A dynamic random access memory is disclosed which has memory cell units formed on a silicon substrate, each of which includes four memory cells, each of these including a MOS transistor and a MOS capacitor. One cell unit occupies a substantially square ar... | 08/09/1988 |
| 4686552 | Integrated circuit trench cell A two-device trench cell having a transistor surrounded by a capacitor. This combined capacitor and transistor cell can be used as a memory cell. The capacitor is first fabricated into the walls of a trench leaving a narrowed trench into which a vertical ... | 08/11/1987 |
| 4673962 | Vertical DRAM cell and method DRAM cells and arrays of cells on a semiconductor substrate, together with methods of fabrication, are disclosed wherein the cells are formed in pairs or quartets by excavating a trench or two trenches through the cell elements to split an original cell i... | 06/16/1987 |
| 4651183 | High density one device memory cell arrays A memory is provided which includes a semiconductor substrate having a diffusion region disposed therein, first, second, third and fourth storage capacitors, first, second, third and fourth switching or transfer devices for coupling the first, second, thi... | 03/17/1987 |
| 4630088 | MOS dynamic ram A MOS dynamic RAM consists of integrated memory cells each having a MOSFET and a MOS capacitor. The MOS dynamic RAM comprises a semiconductor substrate of a first conductivity type on which periodic projections and recesses are formed, a source region of ... | 12/16/1986 |
| 4271418 | VMOS Memory cell and method for making same A semiconductor memory device is provided comprised of an integrated array of cells formed on a substrate in conjunction with parallel spaced-apart bit lines and conductive word lines that are perpendicular to the bit lines. A plurality of V-shaped recess... | 06/02/1981 |
| 4126881 | Semiconductor memory A semiconductor memory has storage cells composed of MOS selector transistors operated by a drive line and storage capacitors connected to selector transistors. The selector transistors are constructed in accordance with the V-MOS technique. A semiconduct... | 11/21/1978 |
| 4021844 | Photosensitive diode array storage target A storage target comprising a photosensitive diode array which can be used to convert an optical image into an electronic image where the photo diodes are constituted by "hyper abrupt" junctions having a junction capacitance of wide dynamic range when rev... | 05/03/1977 |
