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| Number | Title | Issue Date |
| 7443008 | Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable s... | 10/28/2008 |
| 7349248 | Non-volatile memory A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region between the upper electrode and the lower electrode. The state-varia... | 03/25/2008 |
| 7339186 | IC chip with nanowires Arrangement of nanowires with PN junctions between bit lines and word lines are arranged as a ROM memory cell array. A number of the nanowires have dielectric regions and are present only as a dummy. The connections between word and bit lines may also exist as trans... | 03/04/2008 |
| 7321153 | Semiconductor memory device and corresponding programming method A semiconductor cell includes, within a substrate region, four active zones that are mutually laterally isolated, the first active zone to be connected to a first voltage, the second active zone, of an opposite type of conductivity to that of the first active zone, ... | 01/22/2008 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| 7233024 | Three-dimensional memory device incorporating segmented bit line memory array A three-dimensional (3D) high density memory array includes multiple layers of segmented bit lines (i.e., sense lines) with segment switch devices within the memory array that connect the segments to global bit lines. The segment switch devices reside on one or more... | 06/19/2007 |
| 7227238 | Integrated fuse with regions of different doping within the fuse neck An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second regions having different types of dopants. In one example, the first... | 06/05/2007 |
| 7166875 | Vertical diode structures A method of making a vertical diode is provided, the vertical dioxide having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the d... | 01/23/2007 |
| 7145255 | Lateral programmable polysilicon structure incorporating polysilicon blocking diode A programmable element includes a diode and a programmable structure formed in a polysilicon layer isolated from a semiconductor substrate by a dielectric layer. The diode includes a first region and a second region of opposite conductivity types. The programmable s... | 12/05/2006 |
| 7115524 | Methods of processing a semiconductor substrate The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region received about a peripheral edge of the semiconductor substrate. A la... | 10/03/2006 |
| 7105858 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 09/12/2006 |
| 7005727 | Low cost programmable CPU package/substrate A programmable package with a fuse embedded therein, and fabrication method are provided. The fuse has first and second terminal ends joined by a central portion defining a fusible link. The ends include a portion of the first and second conductive layers, the centr... | 02/28/2006 |
| 6992365 | Reducing leakage currents in memories with phase-change material A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N t... | 01/31/2006 |
| 6972476 | Diode and diode string structure A diode structure is provided. The diode structure comprises a first conductive type substrate, a second conductive type first well region, a first conductive type second well region, a second conductive type first doped region, a first conductive type second doped ... | 12/06/2005 |
| 6956240 | Light emitting device In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an orga... | 10/18/2005 |
| 6879020 | Semiconductor device Via-shaped copper interconnect lines (2) buried in an interlayer insulating film (8) are connected to gate interconnect lines (1) in the lowermost layer. A copper interconnect line (6) of a shield ring (5) is buried in the interlay... | 04/12/2005 |
| 6867478 | Semiconductor device having improved alignment of an electrode terminal on a semiconductor chip and a conductor coupled to the electrode terminal A semiconductor device manufacturing method is used for packaging a thin semiconductor chip in an economical manner. A semiconductor chip having one electrode terminal, a first member having a first conductor on its surface, and a second member having a second condu... | 03/15/2005 |
| 6797992 | Apparatus and method for fabricating a high reverse voltage semiconductor device The present invention provides a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. The device includes a high resistivity substrate, and an epitaxially grown, low resistivity layer having a stress-relieving dopant. ... | 09/28/2004 |
| 6774456 | Configuration of fuses in semiconductor structures with Cu metallization A configuration of fuses in a semiconductor structure having Cu metallization planes is provided. The semiconductor structure has an Al metal layer on the topmost interconnect plane for providing Al bonding pads. The fuses are configured as Al fuses and, in the semi... | 08/10/2004 |
| 6770948 | Integrated fuse with regions of different doping within the fuse neck An integrated fuse has regions of different doping located within a fuse neck. The integrated fuse includes a polysilicon layer and a silicide layer. The polysilicon layer includes first and second regions having different types of dopants. In one example, the first... | 08/03/2004 |
| 6603153 | Fast recovery diode and method for its manufacture A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recover... | 08/05/2003 |
| 6552409 | Techniques for addressing cross-point diode memory arrays A memory array and some addressing circuitry therefor are formed by creating circuit elements at the crossing-points of two layers of electrode conductors that are separated by a layer of a semiconductor material. The circuit elements formed at the crossi... | 04/22/2003 |
| 6531757 | Semiconductor device fuse box with fuses of uniform depth A semiconductor device with a fuse box includes at least two gate electrodes 8, 9 and a fuse member 6. The two gate electrodes 8, 9 are formed on at least one insulating film 13 on a semiconductor substrate 100. The fuse member 6 is formed on the insulati... | 03/11/2003 |
| 6515345 | Transient voltage suppressor with diode overlaying another diode for conserving space A semiconductor component includes a semiconductor layer (210) and at least one diode (220) in the semiconductor layer. The semiconductor component also includes an electrically insulative layer (230) over the semiconductor layer and the diode. The semico... | 02/04/2003 |
| 6496053 | Corrosion insensitive fusible link using capacitance sensing for semiconductor devices A structure and method for a programming device or a fuse includes a capacitive circuit having a capacitance which is alterable. The capacitive circuit can include a first capacitor, a fuse link connected to the first capacitor and a second capacitor conn... | 12/17/2002 |
| 6384435 | Data cell region and system region for a semiconductor memory The present invention relates to a memory and an information apparatus and more specifically realizes a memory having large capacity through a simplified process and an information apparatus utilizing the same memory by generating the data cell region wit... | 05/07/2002 |
| 6380636 | Nonvolatile semiconductor memory device having an array structure suitable to high-density integrationization In a memory cell array having sub-bit lines and sub-source lines formed of a diffusion layer, a main bit line is arranged commonly to the sub-bit lines arranged in multiple columns. A memory cell area can be reduced without restrictions by pitch condition... | 04/30/2002 |
| 6362514 | Semiconductor device There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the... | 03/26/2002 |
| 6329678 | Semiconductor memory array A semiconductor memory array for improving packaging reliability and device speed is disclosed in the present invention. The semiconductor memory array includes a peripheral device region in a center portion of the array, a plurality of memory mat regions... | 12/11/2001 |
| 6303975 | Low noise, high frequency solid state diode A low noise, high frequency solid state diode is provided from a plurality of unit diode cells which are interconnected in parallel. Each of the unit diode cells forms an element of an array having rows and columns of unit diode cells. The diode cells inc... | 10/16/2001 |
| 6208012 | Zener zap diode and method of manufacturing the same The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according to the invention i... | 03/27/2001 |
| 6064100 | Product for ROM components having a silicon controlled rectifier structure A manufacturing method and a structure for ROM component having a silicon controlled rectifier as the basic memory instead of a channel transistor in a conventional ROM, and using a formation of contact windows for coding a ROM instead of performing an io... | 05/16/2000 |
| 6015995 | ROM diode structure A read only memory device, which includes a P-type substrate, is provided. Several essentially parallel N-pole regions are located on the substrate. The N-pole regions extends in a first direction, and are separated from each other by a space. The N-pole ... | 01/18/2000 |
| 6008522 | Structure of buried bit line The structure of a buried bit line. A substrate is provided and a trench is, formed within the substrate. Next, a trench insulating layer is located on a portion of the trench surface to expose a top corner of the trench. Then, a first conductive layer is... | 12/28/1999 |
| 5997152 | Light emitting element module and printer head using the same A light emitting element module is provided including a board and plural chips arranged in the form of an array on the board. Each chip includes at least one light emitting element having a light emitting function and/or a photosensing function. The chips... | 12/07/1999 |
| 5898211 | Laser diode package with heat sink A laser diode package includes a laser diode, a heat sink and a lid. The laser diode has an emitting surface, a reflective surface opposing the emitting surface, and first and second surfaces between the emitting surface and the reflective surface. The la... | 04/27/1999 |
| 5854102 | Vertical diode structures with low series resistance A vertical diode is provided having a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the diode opening and contacts the active region. The di... | 12/29/1998 |
| 5825069 | High-density semiconductor read-only memory device A ROM device of the type including an array of diode-type memory cells and a method for fabricating the same are provided. The bit lines of this ROM device are a plurality of diffusion regions formed in an alternate manner on the bottom of a plurality of ... | 10/20/1998 |
| 5663589 | Current regulating semiconductor integrated circuit device and fabrication method of the same A semiconductor integrated device having a current regulating diode may be substantially reduced in size and improved in performance by forming the current regulating diode of a plurality of MOS transistors each having a gate, a drain region, and a source... | 09/02/1997 |
| 5643816 | High-density programmable read-only memory and the process for its fabrication A read-only memory device having a memory array composed of memory cells formed as P-N junction diodes when programmed to be in an ON state and as blocking capacitors when remaining in an OFF state. A number of insulators are placed on the surface of a P-... | 07/01/1997 |
