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| Number | Title | Issue Date |
| 8188493 | Light emitting diode with independent electrode patterns Abstract of Disclosure A light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer dispos... | 05/29/2012 |
| 8154035 | Nitride semiconductor light emitting element In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess region... | 04/10/2012 |
| 8039854 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional featu... | 10/18/2011 |
| 8013349 | Light emitting device and method of manufacturing the same A method of manufacturing a light emitting device includes: forming a plurality of independent light emitting portions on a growth substrate; separating the light emitting portions from the growth substrate; mounting the light emitting portions onto a receiving subs... | 09/06/2011 |
| 7989824 | Method of forming a dielectric layer on a semiconductor light emitting device A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The... | 08/02/2011 |
| 7989823 | Light emitting system, light emitting apparatus and forming method thereof A light emitting system, a light emitting apparatus and the forming method thereof, the light emitting system comprising a plurality of light emitting units (100) and a frame for connecting the light emitting units. Each light emitting unit comprises a substrate (10... | 08/02/2011 |
| 7939838 | Semiconductor light emitting device with transparent substrate and reflective slope A semiconductor light emitting device includes a semiconductor layer having a recess extending downwardly from a top surface thereof along a pattern of a closed line so that said recess defines and encloses a region of the semiconductor layer that emits light, said ... | 05/10/2011 |
| 7928451 | Shaped contact layer for light emitting heterostructure An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more ... | 04/19/2011 |
| 7915623 | Light-emitting diode array, light-emitting diode, and printer head A light emitting diode array in which, when viewed from the above, the shape of an almost square light emitting diode is square-chamfered or round-chamfered at the corners thereof in order to minimize light leakage at a reverse mesa surface to allow an electrode lay... | 03/29/2011 |
| 7884379 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device is provided with a substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, an n-side pad electrode, a translucent electrode and a p-side pad electrode, wherein the translucent electrode is... | 02/08/2011 |
| 7838892 | Optoelectronic semiconductor chip and method for forming a contact structure for making electrical contact with an optoelectronic semiconductor chip An optoelectronic semiconductor chip, comprising a plurality of semiconductor function regions (10) arranged on a common carrier layer (1, 7), at least one of the semiconductor function regions being a defect region (12), and a contact structure... | 11/23/2010 |
| 7791090 | GaN based LED having reduced thickness and method for making the same A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermin... | 09/07/2010 |
| 7737453 | Light emitting diode structure Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a li... | 06/15/2010 |
| 7728337 | Light emitting diode assembly and light emitting diode display device An exemplary light emitting diode (LED) assembly includes a cover, a substrate, a LED unit, a first electrode terminal, and a second electrode terminal. The substrate includes a first surface and a second surface on an opposite side of the substrate thereto. The sub... | 06/01/2010 |
| 7723738 | Semiconductor light emitting element and semiconductor light emitting device A semiconductor light emitting element includes a semiconductor layer which has an electrode on at least one principal surface and a supporting substrate which is bonded with the electrode by a conductive adhesive. One of the semiconductor layer and the supporting s... | 05/25/2010 |
| 7671374 | LED chip package structure with a plurality of thick guiding pins and a method for manufacturing the same An LED chip package structure with thick guiding pin includes a plurality of conductive pins separated from each other, an insulative casing, a plurality of LED chips, and a packaging colloid. The insulative casing covers a bottom side of each conductive pin to form... | 03/02/2010 |
| 7605403 | Semiconductor light-emitting device and fabrication method of the same A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a ... | 10/20/2009 |
| 7598531 | Electronic device contact structures Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. Contact structures (also referred to as electrical contact structures or electrodes) are features on a device that are electrically conne... | 10/06/2009 |
| 7541620 | Semiconductor device, light emitting diode print head, and image forming apparatus A semiconductor device includes a plurality of light emitting elements formed of a thin layer of a compound semiconductor and arranged in a row in one direction with an equal interval therebetween. Each of the light emitting elements includes a light emitting area f... | 06/02/2009 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7439550 | Semiconductor light emitting device A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having... | 10/21/2008 |
| 7432533 | Encapsulation of electronic devices with shaped spacers An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer particles comprise a base and an u... | 10/07/2008 |
| 7429755 | High power light emitting diode A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semic... | 09/30/2008 |
| 7427799 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ... | 09/23/2008 |
| 7420271 | Heat conductivity and brightness enhancing structure for light-emitting diode A heat conductivity and brightness enhancing structure for light-emitting diode, including a bracket having a cathode leg support. A bowl structure is formed on upper end of the cathode leg support for resting a light-emitting chip therein. At least one depression i... | 09/02/2008 |
| 7411220 | Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 08/12/2008 |
| 7408202 | Solid state device with current spreading segments Solid state devices, such as solid state light emitting devices, having non-linear current spreading segments are disclosed. Projection subsystems and systems equipped with such solid state light emitting devices are also disclosed. ... | 08/05/2008 |
| 7408200 | Thin film transistor array panel and manufacturing method thereof A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected... | 08/05/2008 |
| 7402837 | Light emitting devices with self aligned ohmic contacts Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region... | 07/22/2008 |
| 7385226 | Light-emitting device A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer... | 06/10/2008 |
| 7372077 | Semiconductor device A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed o... | 05/13/2008 |
| 7364371 | Optical module An optical module has plural optical units each having an optical communication device that performs conversion between an electrical signal and an optical signal, and a socket that the optical communication device is fitted in. The optical units are aligned and det... | 04/29/2008 |
| 7366216 | Semiconductor laser element formed on substrate having tilted crystal orientation A semiconductor laser element having a structure in which at least one AlGaInP or GaInP layer is formed above a GaAs substrate. The crystal orientation of the principal plane of the GaAs substrate is tilted from (100) toward (111). When the total thickness of the at... | 04/29/2008 |
| 7365368 | Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-em... | 04/29/2008 |
| 7361935 | Semiconductor device, LED print head, that uses the semiconductor, and image forming apparatus that uses the LED print head A semiconductor device includes a substrate, conductive layer, semiconductor thin films, and individual electrodes. The conductive layer is formed on the substrate and serves as a common electrode. The thin films are bonded on the conductive layer. Each of the plura... | 04/22/2008 |
| 7355212 | Light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 04/08/2008 |
| 7355210 | High-efficiency light-emitting element A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride... | 04/08/2008 |
| 7342707 | Indicators and illuminators using a semiconductor radiation emitter package A vehicle lamp assembly includes a housing and an LED lamp carried in the housing. A signal mirror includes a mirror and an LED lamp. The LED lamp includes a heat extraction member. ... | 03/11/2008 |
| 7342251 | Method of manufacturing an electro-optical device An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be us... | 03/11/2008 |
| 7341879 | Method of manufacturing a point source light-emitting diode A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a patter... | 03/11/2008 |
