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| Number | Title | Issue Date |
| 8154034 | Method for fabricating vertical light emitting devices and substrate assembly for the same In a method for fabricating a vertical light emitting device, the separation or lift-off of the substrate from the light emitting diode structure formed thereon is facilitated by forming voids at the interface between the substrate and the light emitting diode struc... | 04/10/2012 |
| 8148741 | Polychromatic LED's and related semiconductor devices A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white... | 04/03/2012 |
| 8035118 | Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same A nitride semiconductor light-emitting device includes a layered portion emitting light on a substrate. The layered portion includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The periphery of the layered portion is inclined, a... | 10/11/2011 |
| 7994524 | Vertically structured LED array light source A vertical structured Light Emitting Diode (LED) array using wafer level bonding. The process bonds two or more LED arrays vertically to produce light mixing in a small footprint. The vertically bonded LED array contains through substrate vias and a plurality of met... | 08/09/2011 |
| 7956367 | Light-emitting device having light-emitting elements connected in series A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED array... | 06/07/2011 |
| 7899103 | Side light emitting type semiconductor laser diode having dielectric layer formed on active layer Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide la... | 03/01/2011 |
| 7880185 | Semiconductor light emitting device with a substrate having a cross sectional trapezoidal shape and an oblique surface In an LED array chip (2), LEDs (6) are connected together in series by a bridging wire (30). The LEDs (6) each have a semiconductor multilayer structure (8-18) including a light emitting layer (14). Here, the semicond... | 02/01/2011 |
| 7847304 | LED array, LED head and image recording apparatus An LED array includes a semiconductor substrate and a plurality of first LED portions formed integrally on a surface of the semiconductor substrate. The first LED portions emit light of a predetermined color. The LED array includes a plurality of second LED portions... | 12/07/2010 |
| 7821018 | GaN-based semiconductor light-emitting device and method for the fabrication thereof A GaN-based semiconductor light-emitting device 1 includes a stacked body 10A having the component layers 12 that include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semicondu... | 10/26/2010 |
| 7675075 | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is ... | 03/09/2010 |
| 7642560 | Composite semiconductor light-emitting device A composite semiconductor light-emitting device includes a first semiconductor element portion made of a first semiconductor material and a second semiconductor element portion made of a second semiconductor material different from the first semiconductor material. ... | 01/05/2010 |
| 7598529 | Semiconductor chip having a soldering layer sequence, and process for soldering a semiconductor chip A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follo... | 10/06/2009 |
| 7598530 | Light emitting diode with high illumination A light emitting diode (80) includes a first and a second semiconductor structures (30, 40), and an adhesive layer (34, 46) between the first and the second semiconductor structures. The first semiconductor structure includes a n-type AlGaInP cl... | 10/06/2009 |
| 7531843 | Structure of AC light-emitting diode dies A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse ori... | 05/12/2009 |
| 7514720 | White light emitting device The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the fir... | 04/07/2009 |
| 7473935 | White-light emitting semiconductor device A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first light-emitting die emits a first radiation having a first wavelength range. The s... | 01/06/2009 |
| 7435994 | Semiconductor device and method for fabricating the same A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown layer is adhered to a recipient... | 10/14/2008 |
| 7420204 | Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor layer between a source electrode... | 09/02/2008 |
| 7388230 | Selective colored light emitting diode A selective colored LED includes a light emitting area epitaxially grown on a first cladding layer, and a second cladding layer epitaxially grown on the light emitting area. The light emitting area includes at least one thin single crystal layer of rare earth materi... | 06/17/2008 |
| 7352006 | Light emitting diodes exhibiting both high reflectivity and high light extraction The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally gen... | 04/01/2008 |
| 7339491 | Light-emitting diode backlight module An LED backlight module includes a substrate. An LED array, composed of a plurality of red, blue and green lamp LEDs, is mounted on the substrate. A light-mixing chamber is mounted on the substrate and is used to seal the LED array inside. A diffusion sheet is secur... | 03/04/2008 |
| 7326062 | System and method for increasing the surface mounting stability of a lamp In one embodiment, an LED is constructed with its entire contact structure stamped and inserted into the molded lamp as a single structure. A portion of the contact structure is imbedded in the molded lamp such that the bottom surface of the contacts do not extend b... | 02/05/2008 |
| 7323721 | Monolithic multi-color, multi-quantum well semiconductor LED A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitti... | 01/29/2008 |
| 7323720 | Light-emitting device, image forming apparatus, and electronic apparatus with an integrated circuit mounted on a substrate A light-emitting device includes a substrate having a plurality of light-emitting elements and a light emission region arranged on one surface thereof, light being emitted from one surface of the light emission region; and an integrated circuit chip that generates s... | 01/29/2008 |
| 7321191 | Phosphor blends for green traffic signals There is provided a blue-green illumination system, including a semiconductor light emitter, and a luminescent material, wherein the system has an emission with CIE color coordinates located within an area of a of a pentagon on a CIE chromaticity diagram, whose corn... | 01/22/2008 |
| 7321132 | Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high electron mobility transistors. The... | 01/22/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7282855 | Flat panel display having light blocking layer A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at l... | 10/16/2007 |
| 7271420 | Monolitholic LED chip to emit multiple colors A light emitting diode chip with red, green and blue light emission regions on a single substrate. The light emission regions may be powered selectively to only emit one color light at a time. Or all three regions may be powered simultaneously so that the LED chip e... | 09/18/2007 |
| 7271423 | Semiconductor light-emitting device and light-emitting display device therewith A semiconductor light-emitting device has a semiconductor light-emitting element for emitting light with emission wavelengths of 390 to 420 nm, wherein the wavelengths of light from the semiconductor light-emitting element are converted by a fluorescent substance ha... | 09/18/2007 |
| 7259398 | Semiconductor light emitting apparatus and method of fabricating the same A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer,... | 08/21/2007 |
| 7224001 | Semiconductor light source A semiconductor light source for illuminating a physical space has been invented. In various embodiments of the invention, a semiconductor such as and LED chip, laser chip, LED chip array, laser array, an array of chips, or a VCSEL chip is mounted on a heat sink. Th... | 05/29/2007 |
| 7223998 | White, single or multi-color light emitting diodes by recycling guided modes A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electrically biased in a forward di... | 05/29/2007 |
| 7208752 | Structure and manufacturing of gallium nitride light emitting diode A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semic... | 04/24/2007 |
| 7204050 | Exit device with lighted touchpad An exit device includes an electroluminescent exit sign assembly, preferably mounted on a push rail actuator of the exit device. An electroluminescent illuminator, an opaque material and a transparent protective cover form the electroluminescent sign assembly. The p... | 04/17/2007 |
| 7205578 | Semiconductor component which emits radiation, and method for producing the same This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2)... | 04/17/2007 |
| 7202506 | Multi element, multi color solid state LED/laser A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons ar... | 04/10/2007 |
| 7199401 | Light-emitting semiconductor device An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is ... | 04/03/2007 |
| 7193236 | Light emitting device using nitride semiconductor and fabrication method of the same A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1—xN/InyGa... | 03/20/2007 |
| 7190076 | Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN sub... | 03/13/2007 |
