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| Number | Title | Issue Date |
| 8183554 | Symmetrical programmable memresistor crossbar structure A crossbar structure includes a first layer or layers including first p-type regions and first n-type regions, a second layer or layers including second p-type regions and second n-type regions, and a resistance programmable material formed between the first layer(s... | 05/22/2012 |
| 8178862 | Junctionless metal-oxide-semiconductor transistor A junctionless metal-oxide-semiconductor transistor is described. In one aspect, a transistor device comprises a semiconductor material. The semiconductor material comprises first, second, and third portions. The second portion is located between the first and third... | 05/15/2012 |
| 8168964 | Semiconductor device using graphene and method of manufacturing the same A semiconductor graphene is used for a channel layer, and a metal graphene is used for electrode layers for a source, a drain, and a gate which serve as interconnections as well. An oxide is used for a gate insulating layer. The channel layer and the electrode layer... | 05/01/2012 |
| 8164082 | Spin-bus for information transfer in quantum computing A spin bus quantum computing architecture includes a spin bus formed of multiple strongly coupled and always on qubits that define a string of spin qubits. A plurality of information bearing qubits are disposed adjacent a qubit of the spin bus. Electrodes are formed... | 04/24/2012 |
| 8164083 | Quantum dot optoelectronic devices with enhanced performance An optoelectronic device is disclosed which includes a quantum dot layer including plurality of quantum dots which do not have capping layers. This optoelectronic device may be a quantum dot light-emitting device, which includes (1) a substrate which is transparent ... | 04/24/2012 |
| 8138492 | Formation of carbon and semiconductor nanomaterials using molecular assemblies The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attach... | 03/20/2012 |
| 8138491 | Self-aligned nanotube field effect transistor A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a... | 03/20/2012 |
| 8115190 | Nanowires An apparatus and a method of manufacturing the apparatus. The apparatus includes a main nanowire and branch nanowires emanating from the main nanowire. The main nanowire may have a first portion and a second portion. The first portion may have a first carrier concen... | 02/14/2012 |
| 8115191 | Self-constrained anisotropic germanium nanostructure from electroplating A nanostructure comprising germanium, including wires of less than 1 micron in diameter and walls of less than 1 micron in width, in contact with the substrate and extending outward from the substrate is provided along with a method of preparation. ... | 02/14/2012 |
| 8115189 | Silica nanowire comprising silicon nanodots and method of preparing the same Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as va... | 02/14/2012 |
| 8076666 | Use of sack geometry to implement a single qubit phase gate An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit consisting of two σ-quasiparticles. which may be isolated on respect... | 12/13/2011 |
| 8063396 | Polariton mode optical switch Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the ... | 11/22/2011 |
| 8058638 | Quantum computational systems Apparatus and methods for performing quantum computations are disclosed. Such quantum computational systems may include quantum computers, quantum cryptography systems, quantum information processing systems, quantum storage media, and special purpose quantum simula... | 11/15/2011 |
| 8053754 | Quantum computational systems A computer-implemented method for encryption and decryption using a quantum computational model is disclosed. Such a method includes providing a model of a lattice having a system of non-abelian anyons disposed thereon. From the lattice model, a first quantum state ... | 11/08/2011 |
| 8049203 | Nanoelectronic structure and method of producing such The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. Th... | 11/01/2011 |
| 8044379 | Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least i... | 10/25/2011 |
| 8003973 | Connect and capacitor substrates in a multilayered substrate structure coupled by surface coulomb forces A multi layered substrate structure can be formed where the substrates are coupled together using surface Coulomb forces. Connect substrates electrically connects signals and DC voltages between the substrates. The connect substrates bypass output/input buffers betw... | 08/23/2011 |
| 7999248 | Ultrahigh density patterning of conducting media A nanoscale device and a method for creating and erasing of nanoscale conducting regions at the interface between two insulating oxides SrTiO3 and LaAlO3 is provided. The method uses the tip of a conducting atomic force microscope to locally an... | 08/16/2011 |
| 7989798 | Fabricating arrays of metallic nanostructures A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic ... | 08/02/2011 |
| 7982204 | Using unstable nitrides to form semiconductor structures Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to ... | 07/19/2011 |
| 7968863 | Optical device having a quantum-dot structure Method of manufacturing an optical device, and an optical device, the optical device having one or more layers (13) of quantum-dots located in-between barrier layers (12). A spacer layer (15) is grown on a barrier layer (12), such that th... | 06/28/2011 |
| 7956345 | CNT devices, low-temperature fabrication of CNT and CNT photo-resists A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface... | 06/07/2011 |
| 7935954 | Artificial band gap A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are ... | 05/03/2011 |
| 7932511 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 04/26/2011 |
| 7915604 | Optical device capable of emitting photons and method for its manufacture An optical device which can operate as a single photon emitter 1, comprising a three dimensional optical cavity 7 which spatially confines a photon to the order of the photon wavelength in all three dimensions. The cavity 7 is configured to defi... | 03/29/2011 |
| 7902541 | Semiconductor nanowire with built-in stress A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a g... | 03/08/2011 |
| 7902540 | Fast P-I-N photodetector with high responsitivity A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the ... | 03/08/2011 |
| 7897960 | Self-aligned nanotube field effect transistor A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a... | 03/01/2011 |
| 7893422 | Transistor on the basis of new quantum interference effect A quantum interference transistor comprising a thin metal film having a protrusion and a thin insulating layer between the metal film and protrusion. A potential barrier is formed in the region beneath the protrusion as a result of quantum interference caused by the... | 02/22/2011 |
| 7893423 | Electrical circuit device having carbon nanotube fabrication from crystallography oriented catalyst A device and method associated with carbon nanowires, such as single walled carbon nanowires having a high degree of alignment are set forth herein. A catalyst layer is deposited having a predetermined crystallographic configuration so as to control a growth paramet... | 02/22/2011 |
| 7880161 | Multiple-wavelength opto-electronic device including a superlattice A multiple-wavelength opto-electronic device may include a substrate and a plurality of active optical devices carried by the substrate and operating at different respective wavelengths. Each optical device may include a superlattice comprising a plurality of stacke... | 02/01/2011 |
| 7838865 | Method for aligning elongated nanostructures A method of depositing elongated nanostructures that allows accurate positioning and orientation is described. The method involves printing or otherwise depositing elongated nanostructures in a carrier solution. The deposited droplets are also elongated, usually by ... | 11/23/2010 |
| 7829880 | Quantum dot semiconductor device A quantum dot semiconductor device includes an active layer having a plurality of quantum dot layers each including a composite quantum dot formed by stacking a plurality of quantum dots and a side barrier layer formed in contact with a side face of the composite qu... | 11/09/2010 |
| 7820998 | Device and method for manipulating direction of motion of current carriers A device and method for manipulating a direction of motion of current carriers are presented. The device comprises a structure containing a two-dimensional gas of current carriers configured to define at least one region of inhomogeneity which is characterized by a ... | 10/26/2010 |
| 7816662 | RF nanoswitch An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material se... | 10/19/2010 |
| 7812336 | Levitating substrate being charged by a non-volatile device and powered by a charged capacitor or bonding wire At least one non-volatile device is coupled to a first Coulomb island. The floating gates of these non-volatile devices are connected to the island and can charge the Coulomb islands. One device can charge the island positively while a second device can be used to c... | 10/12/2010 |
| 7781754 | Fermionic bell-state analyzer and quantum computer using same The Bell-state analyzer includes a semiconductor device having quantum dots formed therein and adapted to support Fermions in a spin-up and/or spin-down states. Different Zeeman splittings in one or more of the quantum dots allows resonant quantum tunneling only for... | 08/24/2010 |
| 7767995 | Single-electron tunnel junction for complementary metal-oxide device and method of manufacturing the same A method of providing a p-type substrate, disposing a pad oxide layer on the p-type substrate, disposing a nitride layer on the pad oxide layer, forming a nitride window in the nitride layer, disposing a field oxide in the nitride window, disposing a polysilicon gat... | 08/03/2010 |
| 7709823 | Group-III nitride vertical-rods substrate The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the b... | 05/04/2010 |
| 7700936 | Fabrication of quantum dots embedded in three-dimensional photonic crystal lattice In one embodiment, a method of producing an optoelectronic nanostructure includes preparing a substrate; providing a quantum well layer on the substrate; etching a volume of the substrate to produce a photonic crystal. The quantum dots are produced at multiple inter... | 04/20/2010 |
