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| Number | Title | Issue Date |
| 8158991 | Light-emitting element, light-emitting device, electronic device, and lighting device Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer betw... | 04/17/2012 |
| 7999270 | III-nitride compound semiconductor light emitting device comprising layer with pinhole structure The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of elect... | 08/16/2011 |
| 7994521 | Light emitting devices Light-emitting devices, and related components, systems and methods are disclosed. ... | 08/09/2011 |
| 7994522 | Organic light emitting element and organic light emitting device The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, s... | 08/09/2011 |
| 7985974 | Light-emitting element, light-emitting device, lighting device, and electronic device An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a c... | 07/26/2011 |
| 7910936 | N2 based plasma treatment for enhanced sidewall smoothing and pore sealing of porous low-k dielectric films A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the line... | 03/22/2011 |
| 7768019 | Organic light-emitting device with field-effect enhanced mobility A two-terminal organic light-emitting device structure is presented with low absorption losses and high current densities. Light generation and emission occur at a predetermined distance from any metallic contact, thereby reducing optical absorption losses. High cur... | 08/03/2010 |
| 7763898 | Light emitting device having high optical output efficiency A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said u... | 07/27/2010 |
| 7635872 | Semiconductor layer, process for forming the same, and semiconductor light emitting device A semiconductor layer contains, as a principal constituent, a Groups III-V semiconductor compound, which may be represented by the general formula: BxAlyGazN, wherein x represents a number satisfying the condition 0 | 12/22/2009 |
| 7622744 | Light emitting material, light emitting element, light emitting device and electronic device The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A ... | 11/24/2009 |
| 7488986 | Light emitting device In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element c... | 02/10/2009 |
| 7453096 | Method of fabricating a semiconductor light-emitting device A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 11/18/2008 |
| 7402836 | Light emitting device In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. In a light emitting element c... | 07/22/2008 |
| 7358159 | Method for manufacturing ZnTe compound semiconductor single crystal ZnTe compound semiconductor single crystal, and semiconductor device The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by u... | 04/15/2008 |
| 7329902 | IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs... | 02/12/2008 |
| 7329942 | Array-type modularized light-emitting diode structure and a method for packaging the structure An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. A material with high heat con... | 02/12/2008 |
| 7329898 | Transition metal complex and light-emitting device A light-emitting device comprising a pair of electrodes and one or more organic layers disposed between the electrodes, the one or more organic layers comprising a light-emitting layer. At least one of the organic layers comprises a transition metal complex containi... | 02/12/2008 |
| 7310361 | Intersubband semiconductor lasers with enhanced subband depopulation rate Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 μm) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have g... | 12/18/2007 |
| 7274041 | Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said cryst... | 09/25/2007 |
| 7256483 | Package-integrated thin film LED LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package subs... | 08/14/2007 |
| 7253491 | Silicon light-receiving device A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelect... | 08/07/2007 |
| 7247885 | Carrier confinement in light-emitting group IV semiconductor devices In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of local crystal modifications in t... | 07/24/2007 |
| 7244964 | Light emitting device An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitti... | 07/17/2007 |
| 7211831 | Light emitting device with patterned surfaces Light-emitting devices, and related components, systems and methods are disclosed. The light-emitting device can include a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region. A surface of the... | 05/01/2007 |
| 7208770 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 04/24/2007 |
| 7204050 | Exit device with lighted touchpad An exit device includes an electroluminescent exit sign assembly, preferably mounted on a push rail actuator of the exit device. An electroluminescent illuminator, an opaque material and a transparent protective cover form the electroluminescent sign assembly. The p... | 04/17/2007 |
| 7189591 | Process for producing light-emitting semiconductor device The invention provides a process for producing a light-emitting semiconductor device, which comprises: (1) forming a polycarbodiimide-containing layer on a light takeout side of a light-emitting semiconductor element; and (2) forming irregularities on the surface of... | 03/13/2007 |
| 7179667 | Semiconductor base material and method of manufacturing the material As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes ... | 02/20/2007 |
| 7180154 | Integrated circuit devices having corrosion resistant fuse regions and methods of fabricating the same Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are parallel to the first and secon... | 02/20/2007 |
| 7180100 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 02/20/2007 |
| 7176498 | Terahertz radiating device based on semiconductor coupled quantum wells A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materia... | 02/13/2007 |
| 7173286 | Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon... | 02/06/2007 |
| 7166871 | Light emitting systems Light-emitting systems, and related components, systems and methods are disclosed. ... | 01/23/2007 |
| 7166870 | Light emitting devices with improved extraction efficiency Light-emitting devices, and related components, systems and methods are disclosed. ... | 01/23/2007 |
| 7157741 | Silicon optoelectronic device and optical signal input and/or output apparatus using the same A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite type from that of the substr... | 01/02/2007 |
| 7132695 | Light emitting diode having a dual dopant contact layer A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conducti... | 11/07/2006 |
| 7122846 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 10/17/2006 |
| 7095042 | Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron injection layer having first and ... | 08/22/2006 |
| 7087449 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substr... | 08/08/2006 |
| 7078736 | Light emitting device with a photonic crystal A light emitting device includes a photonic crystal having a periodic pattern of elements exhibiting a spectrum of electromagnetic modes that includes guided modes of frequencies below a predetermined cutoff frequency, and radiation modes of frequencies below and ab... | 07/18/2006 |
