Bizarre Patents
Crispy Chip Sandwich and Process of Producing a Sandwich Product
A food product comprising a multilayer cookie or snack having outer layers formed from a crispy type edible food product such as a potato chip or corn chip, etc. with an intermediate marshmallow layer being in contact with the inner surface of each crispy chip and one or more filler substances.
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| Number | Title | Issue Date |
| 8044413 | Loudspeaker system for motor vehicles utilizing cavities formed by supporting structures In order to produce a powerful bass, bass boxes require a relatively large installation volume, for which insufficient space is frequently available in the interior of a motor vehicle, in particular in a passenger motor vehicle. When drivers and front-seat passenger... | 10/25/2011 |
| 8030668 | Semiconductor LED, opto-electronic integrated circuits (OEIC), and method of fabricating OEIC A light emitting diode demonstrating high luminescence efficiency and comprising a Group IV semiconductor such as silicon or germanium equivalent thereto as a basic component formed on a silicon substrate by a prior art silicon process, and a fabricating method of w... | 10/04/2011 |
| 7994519 | Semiconductor chip and method for producing a semiconductor chip A semiconductor chip (1) comprises a semiconductor body (2) having a semiconductor layer sequence having an active region (23) provided for generating radiation. A contact (4) is arranged on the semiconductor body (2). An injection... | 08/09/2011 |
| 7994520 | Semiconductor light emitting device having multiple single crystalline buffer layers Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprisin... | 08/09/2011 |
| 7863628 | Light-emitting device and light-receiving device using transistor structure Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode ... | 01/04/2011 |
| 7821017 | Light-emitting diode and method for fabricating the same The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upp... | 10/26/2010 |
| 7772600 | Light emitting device having zener diode therein and method of fabricating the same Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type com... | 08/10/2010 |
| 7745837 | Semiconductor light-emitting device with high light-extraction efficiency and method for fabricating the same The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic el... | 06/29/2010 |
| 7582910 | High efficiency light emitting diode (LED) with optimized photonic crystal extractor A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or mo... | 09/01/2009 |
| 7508003 | Production of a GaN bulk crystal substrate and a semiconductor device formed thereon A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge. ... | 03/24/2009 |
| 7495260 | Light emitting devices Light-emitting devices, and related components, systems and methods are disclosed. ... | 02/24/2009 |
| 7417258 | Semiconductor light-emitting device, and a method of manufacture of a semiconductor device A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth ... | 08/26/2008 |
| 7411220 | Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 08/12/2008 |
| 7372200 | Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment The present invention uses plastic film in vacuum sealing an OLED. Inorganic insulating films which can prevent oxygen or water from being penetrated therein and an organic insulating film which has a smaller internal stress than that of the inorganic insulating fil... | 05/13/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7365366 | Boron phosphide-based semiconductor light-emitting device and production method thereof A boron phosphide-based semiconductor light-emitting device, comprising: a crystalline substrate; a first semiconductor layer formed on said crystalline substrate, said first semiconductor layer including a light-emitting layer, serving as a base layer and having a ... | 04/29/2008 |
| 7364805 | Crystal film, crystal substrate, and semiconductor device A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12 | 04/29/2008 |
| 7355204 | Organic device with environmental protection structure An organic electronic device includes a first member including: a substrate; a first conductive layer formed on the substrate; an organic active layer deposited on a portion of the first conductive layer; and a second conductive layer deposited on the organic active... | 04/08/2008 |
| 7355208 | Nitride-based semiconductor element and method of forming nitride-based semiconductor A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in co... | 04/08/2008 |
| 7355213 | Electrode material and semiconductor element As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent ... | 04/08/2008 |
| 7352008 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 04/01/2008 |
| 7347632 | Optical connectors for electronic devices A high-data rate connector for use with consumer electronics couples digital electrical connection interfaces with optical cabling and optical transceivers. In one implementation, an electrical connection interface, such as a DVI, HDMI, or USB connection interface i... | 03/25/2008 |
| 7345297 | Nitride semiconductor device A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order ... | 03/18/2008 |
| 7329942 | Array-type modularized light-emitting diode structure and a method for packaging the structure An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. A material with high heat con... | 02/12/2008 |
| 7317280 | Organic light-emitting devices and their encapsulation method and application of this method An organic light-emitting device comprising a transparent substrate, an anode layer, a cathode layer, organic functional layers sandwiched between the anode layer and the cathode layer, and an encapsulation layer fabricated on one side or both sides of the device, w... | 01/08/2008 |
| 7294862 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of se... | 11/13/2007 |
| 7294848 | Light-emitting Group IV semiconductor devices In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications inducing localized strain that inc... | 11/13/2007 |
| 7291544 | Homoepitaxial gallium nitride based photodetector and method of producing A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104... | 11/06/2007 |
| 7282132 | Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaini... | 10/16/2007 |
| 7279347 | Method for manufacturing a light-emitting structure of a light-emitting device (LED) A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so... | 10/09/2007 |
| 7274041 | Method for locally modifying electronic and optoelectronic properties of crystalline materials an devices made from such materials An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said cryst... | 09/25/2007 |
| 7271417 | Light-emitting element with porous light-emitting layers The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive cladding layer and at least one porous light-emitting layer. The porous lig... | 09/18/2007 |
| 7271418 | Semiconductor apparatus for white light generation and amplification The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, ... | 09/18/2007 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7265299 | Method for reducing voltage drop across metal lines of electroluminescence display devices A conducting device for a display device is disclosed. It comprises one or more non-conducting base lines formed in predetermined locations on a substrate layer, and one or more conducting line structures formed over the non-conducting base lines on the substrate la... | 09/04/2007 |
| 7259406 | Semiconductor optical element A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InG... | 08/21/2007 |
| 7256386 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As... | 08/14/2007 |
| 7250635 | Light emitting system with high extraction efficency In an epitaxial structure of a solid state lighting system, electrical current injection into the active layer is used to excite the photon emission. The present invention employs a unique waveguide layer in the epitaxial structure for trapping the light generated b... | 07/31/2007 |
| 7251265 | Micro-cavity laser having increased sensitivity An optically pumped micro-cavity laser has an optical gain cavity and an optical resonant cavity. The optical gain cavity has a gain medium disposed that generates an optical output in response to an optical pump signal. The optical resonant cavity has an electro-op... | 07/31/2007 |
| 7251418 | Signal receiver having light guide for guiding light transmitted from remote control A signal receiver which receives an optical signal from a remote control includes a light guide for guiding a light passing through a front panel window toward a photodetector mounted on a circuit board. The light guide is made of a homogeneous material. A light gui... | 07/31/2007 |
