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Pizza Pie With Concentric Rings of Crust
A pizza mold for forming a plurality of concentric raised ridges of dough (i.e., crust) on the surface of a pizza pie.
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| Number | Title | Issue Date |
| 8053790 | Optical device having light sensor employing horizontal electrical field The optical device includes a waveguide and a light sensor on a base. The light sensor includes a light-absorbing medium configured to receive a light signal from the waveguide. The light sensor also includes field sources for generating an electrical field in the l... | 11/08/2011 |
| 7910935 | Group-III nitride-based light emitting device Disclosed is a group-III nitride-based light emitting diode. The group-III nitride-based light emitting diode includes a substrate, an n-type nitride-based cladding layer formed on the substrate, a nitride-based active layer formed on the n-type nitride-based claddi... | 03/22/2011 |
| 7906787 | Nitride micro light emitting diode with high brightness and method for manufacturing the same The present invention relates to a nitride micro light emitting diode (LED) with high brightness and a method of manufacturing the same. The present invention provides a nitride micro LED with high brightness and a method of manufacturing the same, wherein a plurali... | 03/15/2011 |
| 7838890 | Optical device and method for manufacturing optical device A method for manufacturing an optical device comprises steps of: (a) laminating a first, a second, a third, a fourth, a fifth, and a sixth semiconductor layers; (b) patterning at least the third, fourth, fifth and sixth semiconductor layers, thereby forming a light ... | 11/23/2010 |
| 7772599 | Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure A gallium-nitride-based semiconductor stacked structure includes a low-temperature-deposited buffer layer and an active layer. The low-temperature-deposited buffer layer is composed of a Group III nitride material that has been grown at low temperature and includes ... | 08/10/2010 |
| 7683385 | Facet extraction LED and method for manufacturing the same A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the sub... | 03/23/2010 |
| 7598527 | Monitoring photodetector for integrated photonic devices A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously cou... | 10/06/2009 |
| 7538355 | Laser addressed monolithic display The present invention aims to provide a display screen where pixels are addressed by a scanning LASER. The screen performs as a photo-amplifier circuit, producing light output at the region being illuminated by the LASER. This illumination produces electron-hole pai... | 05/26/2009 |
| 7470934 | Radiation-emitting optoelectronic semiconductor chip with a diffusion barrier In a radiation-emitting optoelectronic semiconductor chip comprising an active layer (3) at least one p-doped layer (9) and a layer sequence (8) comprising a plurality of undoped layers (4, 5, 6, 7), which is arranged between the active l... | 12/30/2008 |
| 7442569 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 10/28/2008 |
| 7432534 | III-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor... | 10/07/2008 |
| 7429755 | High power light emitting diode A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semic... | 09/30/2008 |
| 7429756 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first ele... | 09/30/2008 |
| 7420998 | Semiconductor laser device A semiconductor laser device has a front surface electrode formed by Au plating, a rear surface electrode formed by Au plating, an anti-adhesive film only on the front surface electrode and made of a material that does not react with Au, and a coating film that cove... | 09/02/2008 |
| 7397066 | Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor having a face with a convex and/... | 07/08/2008 |
| 7385227 | Compact light emitting device package with enhanced heat dissipation and method for making the package A light emitting device package and method for making the package utilizes a first leadframe having a first surface and a second leadframe having a second surface that are relatively positioned such that the second surface is at a higher level than the first surface... | 06/10/2008 |
| 7375378 | Surface passivated photovoltaic devices A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystal... | 05/20/2008 |
| 7375380 | Semiconductor light emitting device A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. Th... | 05/20/2008 |
| 7369585 | Semiconductor based broad area optical amplifier An optical amplifier including: a photonic gain clement; and, a transistor electromagnetically coupled to the gain element to inject current into the gain element responsively to the internal optical intensity of the gain element. The coupling of the transistor and ... | 05/06/2008 |
| 7355212 | Light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 04/08/2008 |
| 7352008 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 04/01/2008 |
| 7339970 | Surface light emitting element, optical module, light transmission device To provide a surface light emitting element capable of maintaining characteristics of the surface light emitting element and accurately detecting emitted light. A surface light emitting element includes a light emitting element part, provided on a semiconductor subs... | 03/04/2008 |
| 7339971 | Optical element and optical module An optical element comprising: a surface-emitting type semiconductor laser having an emission surface; and a photodetector element formed above the emission surface of the surface-emitting type semiconductor laser, wherein the photodetector element includes a semico... | 03/04/2008 |
| 7332211 | Layered materials including nanoparticles A composition includes a layer of nanoparticles and a layer of a second material. ... | 02/19/2008 |
| 7329942 | Array-type modularized light-emitting diode structure and a method for packaging the structure An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. A material with high heat con... | 02/12/2008 |
| 7326965 | Surface-emitting type device and its manufacturing method A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted with respect to the second f... | 02/05/2008 |
| 7326963 | Nitride-based light emitting heterostructure An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure ... | 02/05/2008 |
| 7312472 | Compound semiconductor element based on Group III element nitride In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the m... | 12/25/2007 |
| 7291509 | Method for fabricating a plurality of semiconductor chips A semiconductor material (5) is grown in the windows (4) of a patterned mask layer (3) on a substrate (1). The semiconductor material (5) grows together over the mask layer (3) with semiconductor material (5) from adj... | 11/06/2007 |
| 7282746 | Light emitting diode and method of fabricating the same A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrus... | 10/16/2007 |
| 7279698 | System and method for an optical modulator having a quantum well The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator may receive an optical signal and modulate the received signal by alter... | 10/09/2007 |
| 7271418 | Semiconductor apparatus for white light generation and amplification The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, ... | 09/18/2007 |
| 7264987 | Method of fabricating optoelectronic integrated circuit chip Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thi... | 09/04/2007 |
| 7259399 | Vertical GaN-based LED and method of manufacturing the same Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electr... | 08/21/2007 |
| 7259505 | OLED display with circular polarizer A top-emitting OLED display that includes a substrate; an array of OLED light emissive elements formed over the substrate; an encapsulating cover located over the OLED light emissive elements; and a circular light polarizer located between the encapsulating cover an... | 08/21/2007 |
| 7259398 | Semiconductor light emitting apparatus and method of fabricating the same A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer,... | 08/21/2007 |
| 7253454 | High electron mobility transistor A HEMT device including a GaN channel structure including a very thin (Al,In,Ga)N subchannel layer that is disposed between a first GaN channel layer and a second GaN channel layer, to effect band bending induced from the piezoelectric and spontaneous charges associ... | 08/07/2007 |
| 7244632 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color fi... | 07/17/2007 |
| 7239762 | Light modulation using the Franz-Keldysh effect An optical modulator includes at least one waveguide medium that receives light. An absorption medium absorbs the light under predefined conditions and outputs optically modulated light. The absorption medium is comprised of a Ge-based structure. The Ge-based struct... | 07/03/2007 |
| 7235304 | Optical sensor An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region i... | 06/26/2007 |
