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"Flight by machines heavier than air is unpractical and insignificant, if not utterly impossible."
Simon Newcomb, astronomer ; Said in 1902, less than two years before the first flight at Kitty Hawk
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| Number | Title | Issue Date |
| 8174132 | Folded surface capacitor in-line assembly An in-line capacitor, having a pair of inner conductor segments, each of the inner conductor segments having a mating surface. A dielectric spacer positioned between the mating surfaces, each of the mating surfaces having corresponding folds formed thereon. ... | 05/08/2012 |
| 8053911 | Semiconductor device and data processor Synchronization between command and address signals commonly coupled to a plurality of memory devices to be operated in parallel and a clock signal coupled to the memory devices is achieved, while suppressing an increase in the clock wiring length. A semiconductor d... | 11/08/2011 |
| 8030784 | Semiconductor nanoparticle surface modification Semiconductor nanoparticles having high luminescence properties that are preferable for applications and uses of biotechnology are provided. With the use of electric charges on the surfaces of particles, the particles and selected polymers are allowed to elec... | 10/04/2011 |
| 8030785 | Shadow mask deposition of materials using reconfigurable shadow masks A shadow mask deposition system includes a plurality of identical shadow masks arranged in a number of stacks to form a like number of compound shadow masks, each of which is disposed in a deposition vacuum vessel along with a material deposition source. Materials f... | 10/04/2011 |
| 7948096 | Semiconductor using specific contact angle for immersion lithography A semiconductor device having a specific contact angle for immersion lithography is disclosed. The semiconductor device includes a substrate and a top layer disposed on the substrate. The top layer used in an immersion lithography process includes a composition such... | 05/24/2011 |
| 7880318 | Sensing system and method of making the same A sensing system includes a nanowire, a passivation layer established on at least a portion of the nanowire, and a barrier layer established on the passivation layer. ... | 02/01/2011 |
| 7875988 | Substrate and manufacturing method of the same, and semiconductor device and manufacturing method of the same A substrate for fixing an integrated circuit element includes: a plurality of metal columns that are aligned in a longitudinal direction and a lateral direction in a planar view, each of the plurality of metal columns having a first face and a second face facing opp... | 01/25/2011 |
| 7816795 | Semiconductor device and data processor Synchronization between command and address signals commonly coupled to a plurality of memory devices to be operated in parallel and a clock signal coupled to the memory devices is achieved, while suppressing an increase in the clock wiring length. A semiconductor d... | 10/19/2010 |
| 7719125 | Method for detaching a semiconductor chip from a foil and device for mounting semiconductor chips The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which i... | 05/18/2010 |
| 7579699 | Systems and methods for performing quantum computations Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice, identif... | 08/25/2009 |
| 7569941 | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline ... | 08/04/2009 |
| 7535115 | Wafer and method of producing a substrate by transfer of a layer that includes foreign species A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted int... | 05/19/2009 |
| 7525202 | Quantum computational systems Apparatus and methods for performing quantum computations are disclosed. Such quantum computational systems may include quantum computers, quantum cryptography systems, quantum information processing systems, quantum storage media, and special purpose quantum simula... | 04/28/2009 |
| 7495348 | Process for producing copy protection for an electronic circuit Processes for producing copy protection for an integrated circuit are provided. To avoid unauthorized copying of an integrated circuit, an effective and reliable copy protection are provided. The process includes the steps of providing a substrate that has semicondu... | 02/24/2009 |
| 7474010 | Systems and methods for performing quantum computations Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice accordin... | 01/06/2009 |
| 7453162 | Systems and methods for performing quantum computations Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particles within the lattice accordin... | 11/18/2008 |
| 7436076 | Micromechanical component having an anodically bonded cap and a manufacturing method A micromechanical component includes a cap wafer made up of at least a first silicon substrate and a thin glass substrate, and having a functional wafer made up of at least a second silicon substrate, at least one electrical contact surface being disposed on the fun... | 10/14/2008 |
| 7436075 | Ion beam irradiation apparatus and ion beam irradiation method The ion beam irradiation apparatus has a vacuum chamber 10, an ion source 2, a substrate driving mechanism 30, rotation shafts 14, arms 12, and a motor. The ion source 2 is disposed inside the vacuum chamber 10, and e... | 10/14/2008 |
| 7432526 | Surface-passivated zinc-oxide based sensor A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an... | 10/07/2008 |
| 7429497 | Hybrid package with non-insertable and insertable conductive features, complementary receptacle, and methods of fabrication therefor A hybrid electronic circuit package (102, FIG. 1) includes non-insertable conductive features (110) and insertable conductive features (112) at a surface of the package. A hybrid receptacle (120), such as a socket, for example, inc... | 09/30/2008 |
| 7414324 | Wafer structure with mirror shot A wafer structure with mirror shot is provided. A wafer structure according to the present invention comprises a first mirror shot area to which a mirror shot is applied, wherein the position of a first die is searched for based on the first mirror shot area. The wa... | 08/19/2008 |
| 7414437 | Nanomechanical computer An electromechanical switching device employs a first nanoscale pillar shuttling charge between opposed charged electrodes. Motion of the first pillar is coupled to a second set of pillars providing controlled charge transfer between a second isolated set of electro... | 08/19/2008 |
| 7402770 | Nano structure electrode design A microelectronic switch having a substrate layer, an electrically conductive switching layer formed on the substrate layer, an electrically conductive cavity layer formed on the switching layer, an electrically conductive cap layer formed on the cavity layer, the c... | 07/22/2008 |
| 7390427 | Hydrofluoroether as a heat-transfer fluid The present invention provides an apparatus comprising a device and a mechanism for heat transfer comprising a hydrofluoroether heat-transfer fluid wherein the heat transfer fluid is represented by the following structure: Rf—O—Rh... | 06/24/2008 |
| 7368385 | Method for producing a structure on the surface of a substrate The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that a... | 05/06/2008 |
| 7368788 | SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions Complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cells include at least a first inverter formed in a fin-shaped pattern of stacked semiconductor regions of opposite conductivity type. In some of these embodiments, the first inverter ... | 05/06/2008 |
| 7358619 | Tape carrier for TAB A striped tape carrier for TAB includes a plurality of mounting parts. In the respective mounting parts, wiring patterns to bond electrodes of electronic components are formed. Each of exposure regions includes a predetermined number of mounting parts. On both sides... | 04/15/2008 |
| 7350397 | Device for measuring the quantity of solid particles in a gas medium A device for detecting the amount or concentration of particulate matter in a gas medium comprises a structure for the deposit of solid particles, at least a first and a second electrode associated to the structure, and means for measuring an electric quantity betwe... | 04/01/2008 |
| 7342318 | Semiconductor package free of substrate and fabrication method thereof A semiconductor package and a fabrication method thereof are provided in which a dielectric material layer formed with a plurality of openings is used and a solder material is applied into each of the openings. A first copper layer and a second copper layer are in t... | 03/11/2008 |
| 7334476 | Acceleration sensor chip package An acceleration sensor chip package includes an acceleration sensor chip; a sensor control chip; a re-wiring layer; an outer terminal; a sealing portion; and a substrate. The acceleration sensor chip includes a frame portion; a movable structure; a detection element... | 02/26/2008 |
| 7321131 | Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the ν=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum computer from these alone. ... | 01/22/2008 |
| 7317531 | Apparatus and methods for detecting overlay errors using scatterometry Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structur... | 01/08/2008 |
| 7301634 | Apparatus and methods for detecting overlay errors using scatterometry Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an in... | 11/27/2007 |
| 7291931 | Semiconductor device, semiconductor substrate and fabrication process of a semiconductor device A semiconductor device includes a first insulation layer including a first conductor pattern, a second insulation layer formed on the first insulation layer and including a second conductor pattern, and a third conductor pattern formed on the second insulation layer... | 11/06/2007 |
| 7289213 | Apparatus and methods for detecting overlay errors using scatterometry Disclose is a combined scatterometry mark comprising a scatterometry critical dimension (CD) or profile target capable of being measured to determine CD or profile information and a scatterometry overlay target disposed over the scatterometry CD or profile target, t... | 10/30/2007 |
| 7282422 | Overlay key, method of manufacturing the same and method of measuring an overlay degree using the same An overlay key includes a first overlay key having a first main overlay pattern and a first auxiliary pattern, and a second overlay key having a second main overlay pattern and a second auxiliary overlay pattern, the second auxiliary overlay pattern formed at a loca... | 10/16/2007 |
| 7280212 | Apparatus and methods for detecting overlay errors using scatterometry Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For each of a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sampl... | 10/09/2007 |
| 7272974 | Capacitance type physical quantity sensor having sensor chip and circuit chip A capacitance type physical quantity sensor includes a sensor chip and a circuit chip. The sensor chip includes: a support substrate; a semiconductor layer; a movable electrode; and a fixed electrode. The sensor chip is stacked on the circuit chip such that the mova... | 09/25/2007 |
| 7250644 | Electronic device and method for designing the same The electronic device includes a plurality of layout regions each including a plurality of patterns defined by a buried structure buried in a substrate. For each of the layout regions, in each of the layout regions, the minimum space between the patterns, and a maxi... | 07/31/2007 |
| 7242477 | Apparatus and methods for detecting overlay errors using scatterometry Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. A sample having a plurality of periodic targets that each have a first structure in a first layer and a second structure in a second layer is provided. The... | 07/10/2007 |
