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| Number | Title | Issue Date |
| 8188486 | Optical disk for lighting module An optical disk for use in converting light emitted from a light-emitting diode chip to white light. The optical disk includes a tapered surface such that a center area of the disk has a width greater than a width of an outer area of the disk. The optical disk is fo... | 05/29/2012 |
| 8188487 | Surface emitting laser with trenches to define conductive regions A surface emitting laser includes a lower multilayer mirror, an active layer, and an upper multilayer mirror stacked onto a substrate. A first current confinement layer having a first electrically conductive region and a first insulating region is formed above or be... | 05/29/2012 |
| 8188485 | Detection system having a light emitting diode The invention relates to a light emitting diode having at least one (semi)conductive electroluminescent active layer which comprises at least two different electroluminescent functionalities, wherein the emission spectrum of the diode exhibits at least two intensity... | 05/29/2012 |
| RE43411 | Series connection of two light emitting diodes through semiconductor manufacture process A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layer... | 05/29/2012 |
| 8183578 | Double flip-chip LED package components A light-emitting device (LED) package component includes an LED chip and a carrier chip. The carrier chip includes a first and a second bond pad on a surface of the carrier chip; and a third and a fourth bond pad on the surface of the carrier chip and electrically c... | 05/22/2012 |
| 8183577 | Controlling pit formation in a III-nitride device A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an... | 05/22/2012 |
| 8183579 | LED flip-chip package structure with dummy bumps A light-emitting device (LED) package component includes an LED chip having a first active bond pad and a second active bond pad. A carrier chip is bonded onto the LED chip through flip-chip bonding. The carrier chip includes a first active through-substrate via (TS... | 05/22/2012 |
| 8183580 | Thermally-enhanced hybrid LED package components A light-emitting device (LED) package component includes an LED chip and a carrier chip. The carrier chip includes a first bond pad and a second bond pad on a surface of the carrier chip and bonded onto the LED chip through flip-chip bonding, and a third bond pad an... | 05/22/2012 |
| 8183574 | Thermal isolation of electronic devices in submount used for LEDs lighting applications The present invention relates to an electronic device for providing improved heat transporting capability for protecting heat sensitive electronics and a method for producing the same. The present invention also relates to uses of the electronic device for various a... | 05/22/2012 |
| 8183576 | Light-emitting diodes including perpendicular-extending nano-rods Light-emitting diodes, and methods of manufacturing the light-emitting diode, are provided wherein a plurality of nano-rods may be formed on a reflection electrode. The plurality of nano-rods extend perpendicularly from an upper surface of the reflection electrode. ... | 05/22/2012 |
| 8183575 | Method and apparatus for providing a patterned electrically conductive and optically transparent or semi-transparent layer over a lighting semiconductor device A light emitting diode (“LED”) using an electrical conductive and optical transparent or semi-transparent layer to improve overall light output is disclosed. The device includes a first conductive layer, an active layer, a second conductive layer, an electrical ... | 05/22/2012 |
| 8174028 | Semiconductor composite apparatus, LED, LED printhead, and image forming apparatus A semiconductor composite apparatus includes a substrate and a planarizing layer, and a semiconductor thin film. The planarizing layer is formed on the substrate either directly or indirectly. The planarizing layer includes a first surface that faces the substrate, ... | 05/08/2012 |
| 8174026 | Light emitting device and method of manufacturing the same A light emitting device and a method of manufacturing the same are provided. The light emitting device comprises a first conductive type lower semiconductor layer, a current diffusion layer, a first conductive type upper semiconductor layer, an active layer, and a s... | 05/08/2012 |
| 8174029 | Light emitting apparatus and method for manufacturing the same The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a s... | 05/08/2012 |
| 8174027 | Semiconductor light emitting device and method for manufacturing same A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface;... | 05/08/2012 |
| 8174030 | Luminous devices, packages and systems containing the same, and fabricating methods thereof The present invention is directed to a vertical-type luminous device and high through-put methods of manufacturing the luminous device. These luminous devices can be utilized in a variety of luminous packages, which can be placed in luminous systems. The luminous de... | 05/08/2012 |
| 8174025 | Semiconductor light emitting device including porous layer A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type reg... | 05/08/2012 |
| 8168987 | Semiconductor light emitting device The embodiment discloses a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer; a first electrode layer below the first conductive semiconductor layer; a semiconductor layer at an outer periphe... | 05/01/2012 |
| 8168986 | GaN-based semiconductor light-emitting element, light-emitting element assembly, light-emitting apparatus, method of driving GaN-based semiconductor light-emitting element, and image display apparatus A GaN-based semiconductor light-emitting element is provided and includes a first GaN-based compound semiconductor layer; an active layer having a multi-quantum well structure; and a second GaN-based compound semiconductor layer. At least one of barrier layers const... | 05/01/2012 |
| 8168988 | Light emitting element with a plurality of cells bonded, method of manufacturing the same, and light emitting device using the same The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurali... | 05/01/2012 |
| 8158987 | Light-emitting diode and method for fabrication thereof A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16 | 04/17/2012 |
| 8154029 | Planar light source device A planar light source device includes: a substrate having a thickness larger than 0.9 mm and including a metal layer; and a plurality of light-emitting diode chips disposed on the substrate in a matrix array. Each light-emitting diode chip has a chip size ranging fr... | 04/10/2012 |
| 8148732 | Carbon-containing semiconductor substrate A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixin... | 04/03/2012 |
| 8148733 | Vertical LED with current guiding structure Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to ... | 04/03/2012 |
| 8148734 | Light emitting device having a lateral passivation layer Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an ac... | 04/03/2012 |
| 8143629 | Lighting system and lighting device An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second ele... | 03/27/2012 |
| 8143630 | Zinc sulfide substrates for group III-nitride epitaxy and group III-nitride devices A semiconductor structure includes a substrate which may be formed from a ZnS single crystal of wurtzite (2H) structure with a predetermined crystal orientation, and which has a first surface and a second surface. The structure includes a layer of a group III-nitrid... | 03/27/2012 |
| 8138506 | Group III nitride-based compound semiconductor light-emitting device In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion ... | 03/20/2012 |
| 8138505 | Light-emitting device, display apparatus, and electronic system A light-emitting device includes a cathode, an anode, a first light-emitting layer that is disposed between the cathode and the anode and that emits light of a first color, a second light-emitting layer that is disposed between the first light-emitting layer and the... | 03/20/2012 |
| 8134160 | Chip-type LED having an insulating substrate in which a first concave hole and a second concave hole are formed An embodiment of the present invention has an insulating substrate in which a first concave hole for mounting an LED chip and a second concave hole for connecting a metallic small-gauge wire are formed, where a metallic sheet that serves as a first wiring pattern is... | 03/13/2012 |
| 8129727 | Semiconductor light emitting device A semiconductor light emitting device including a second electrode layer; a light emitting unit including a plurality of compound semiconductor layers under one portion of the second electrode layer; a first insulating layer under the other portion of the second ele... | 03/06/2012 |
| 8129726 | Light-emitting diode package having electrostatic discharge protection function and method of fabricating the same A light-emitting diode (LED) package having electrostatic discharge (ESD) protection function and a method of fabricating the same adopt a composite substrate to prepare an embedded diode and an LED, and use an insulating layer in the composite substrate to isolate ... | 03/06/2012 |
| 8129728 | Light emitting device and method for enhancing light extraction thereof A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection lay... | 03/06/2012 |
| 8124986 | Nitride-based semiconductor device and method for fabricating the same A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor re... | 02/28/2012 |
| 8124985 | Semiconductor light emitting device and method for manufacturing the same There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and at... | 02/28/2012 |
| 8120041 | Semiconductor light-emitting device and method of manufacturing the same A semiconductor light-emitting device has an n-type DBR layer (3), an n-type cladding layer (4), an active layer (5), a p-type cladding layer (6), a p-type intermediate layer (7), a p-type contact layer (8), a p-type transpa... | 02/21/2012 |
| 8120042 | Semiconductor light emitting device A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a substrate and a light emitting structure. The substrate comprises a plurality of discontinuous fusion spots on at least one side surface thereof. The light emittin... | 02/21/2012 |
| 8115213 | Semiconductor light sources, systems, and methods A light-emitting diode includes a substrate, a lower cladding layer, an active layer having a quantum well of a thirty percent concentration of indium on the lower cladding layer, and an upper cladding layer. A method of manufacturing light-emitting diodes includes ... | 02/14/2012 |
| 8115212 | Positive electrode for semiconductor light-emitting device An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises ... | 02/14/2012 |
| 8110836 | Semiconductor device A semiconductor is provided with: a silicon substrate 2a of a first conductivity type, including a first surface S1a and a second surface S2a; a silicon layer 4a of a second conductivity type, arranged on the f... | 02/07/2012 |
