Famous Patents
The first match was accidentally discovered in 1826 when John Walker scraped a stick with chemicals on the end against a stone floor.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8097886 | Organic electroluminescence device An organic electroluminescence device which can prevent the deterioration thereof attributed to moisture by preventing a desiccant from influencing organic electroluminescence elements is provided. The organic electroluminescence device includes: first and second su... | 01/17/2012 |
| 8049225 | Semiconductor device and method for manufacturing the same An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain el... | 11/01/2011 |
| 8030663 | Semiconductor device and manufacturing method thereof A semiconductor device including thin film transistors having high electrical properties and reliability is proposed. Further, a method for manufacturing the semiconductor devices with mass productivity is proposed. The semiconductor device includes a thin film tran... | 10/04/2011 |
| 7880175 | UV light-blocking material with metal nanoparticles Disclosed herein is an ultraviolet (UV) light-blocking composition comprising a metal nanoparticle that absorbs and blocks a UV light wavelength using a surface plasmon-absorbing wavelength, and a dielectric. The UV light-blocking composition is capable of absorbing... | 02/01/2011 |
| 7847297 | Ohmic contact on p-type GaN An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer tha... | 12/07/2010 |
| 7592629 | Gallium nitride thin film on sapphire substrate having reduced bending deformation A gallium nitride thin film on sapphire substrate having reduced bending deformation and a method for manufacturing the same. An etching trench structure is formed on a sapphire substrate by primary nitradation and HCl treatment and a gallium nitride film is grown t... | 09/22/2009 |
| 7476902 | Semiconductor light-emitting device with faceted surfaces and interstice A semiconductor light-emitting device including a light-emitting layer forming portion, a semiconductor substrate of a first conductivity type, a first electrode which is disposed on a surface of the semiconductor substrate of the first conductivity type, a semicond... | 01/13/2009 |
| 7442254 | Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layer A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 10/28/2008 |
| 7420235 | Solid-state imaging device and method for producing the same In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the ch... | 09/02/2008 |
| 7417255 | Methods of forming a high conductivity diamond film and structures formed thereby A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains, which are at least about 20... | 08/26/2008 |
| 7404913 | Codoped direct-gap semiconductor scintillators Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fa... | 07/29/2008 |
| 7399692 | III-nitride semiconductor fabrication A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes. ... | 07/15/2008 |
| 7368310 | Light generating semiconductor device and method of making the same In a method of making a semiconductor light generating device, a GaN-based semiconductor portion is formed on a GaN or AlGaN substrate. The GaN-based semiconductor portion includes a light generating film. An electrode film is formed on the GaN-based semiconductor f... | 05/06/2008 |
| 7368794 | Boron carbide particle detectors Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons. ... | 05/06/2008 |
| 7348200 | Method of growing non-polar a-plane gallium nitride The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitri... | 03/25/2008 |
| 7329915 | Rectifying contact to an n-type oxide material or a substantially insulating oxide material A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 ... | 02/12/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7294360 | Conformal coatings for micro-optical elements, and method for making the same A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure having a surface with uneven structures is exposed to one or more precursor vapors to create a self-limiting film growth on the surface of ... | 11/13/2007 |
| 7291865 | Light-emitting semiconductor device A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflectio... | 11/06/2007 |
| 7262485 | Substrate for growing electro-optical single crystal thin film and method of manufacturing the same A substrate 1 for growing an electro-optical single crystal thin film in which two or more layers of buffer layers 3, 4, and 5 for buffering lattice mismatch between Si and BTO are formed on an Si (001) substrate 2 is provided as a substr... | 08/28/2007 |
| 7259398 | Semiconductor light emitting apparatus and method of fabricating the same A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer,... | 08/21/2007 |
| 7253446 | Light emitting device and illumination apparatus A light-emitting device and illumination apparatus using the same are provided. The light-emitting device includes a semiconductor light-emitting element that emits blue-violet or blue light and a fluorescent material that absorbs the light emitted by the semiconduc... | 08/07/2007 |
| 7238556 | Thin film transistor structure and method of manufacturing the same The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate laye... | 07/03/2007 |
| 7224532 | Optical uses diamondoid-containing materials Novel optical devices based on diamondoid-containing materials are disclosed. Materials that may be fabricated from diamondoids included diamondoid nucleated CVD films, diamondoid-containing CVD films, molecular crystals, and polymerized materials. Devices that may ... | 05/29/2007 |
| 7202503 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant formed on the intermediate l... | 04/10/2007 |
| 7190060 | Three-dimensional stacked semiconductor package device with bent and flat leads and method of making same A three-dimensional stacked semiconductor package device includes first and second semiconductor package devices and a conductive bond. The first device includes a first insulative housing, a first semiconductor chip and a first lead that is bent outside the first i... | 03/13/2007 |
| 7176497 | Group III nitride compound semiconductor An Al0.15Ga0.85N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2 | 02/13/2007 |
| 7173286 | Semiconductor devices formed of III-nitride compounds, lithium-niobate-tantalate, and silicon carbide Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon... | 02/06/2007 |
| 7170095 | Semi-insulating GaN and method of making the same Large-area, single crystal semi-insulating gallium nitride that is usefully employed to form substrates for fabricating GaN devices for electronic and/or optoelectronic applications. The large-area, semi-insulating gallium nitride is readily formed by doping the gro... | 01/30/2007 |
| 7158284 | Apparatus and methods of using second harmonic generation as a non-invasive optical probe for interface properties in layered structures A method for non-invasively probing at least one interface property in a layered structure having at least one interface. In one embodiment, the method includes the steps of exposing the layered structure to an incident photon beam at an incident angle to produce a ... | 01/02/2007 |
| 7154128 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 12/26/2006 |
| 7145181 | Semiconductor chip for optoelectronics A semiconductor chip, in particular a light-emitting diode, has a substrate (2), on which a sequence of semiconductor layers (3) with an active zone (5) has been applied. Above the sequence of semiconductor layers (3) there is a stepped w... | 12/05/2006 |
| 7122842 | Solid state white light emitter and display using same A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are e... | 10/17/2006 |
| 7115487 | Crystalline thin film and process for production thereof, element employing crystalline thin film, circuit employing element, and device employing element or circuit A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number conce... | 10/03/2006 |
| 7112526 | Manufacturing of a semiconductor device with a reduced capacitance between wirings In the method of manufacturing a semiconductor device, via holes and first trenches to form air gaps are concurrently formed in a first insulating film on a semiconductor substrate and a second insulating film is formed thereon. Thereafter, the second insulating fil... | 09/26/2006 |
| 7105875 | Lateral power diodes A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating greater 200V. Contrary to conventional vertical design of power diodes,... | 09/12/2006 |
| 7102171 | Magnetic semiconductor material and method for preparation thereof A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided. In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 Å onto a CdGeP2 sin... | 09/05/2006 |
| 7103079 | Pulsed quantum dot laser system with low jitter A circuit for generating a clock or sampling signal, the circuit including: a semiconductor quantum dot laser element including a region of quantum dots, wherein the region of quantum dots is characterized by an emission distribution having a half-width of at least ... | 09/05/2006 |
| 7084422 | Semiconductor light emitting device having quantum well layer sandwiched between carrier confinement layers The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwic... | 08/01/2006 |
| 7071047 | Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions Semiconductor structures and method of forming semiconductor structures. The semiconductor structures including nano-structures or fabricated using nano-structures. The method of forming semiconductor structures including generating nano-structures using a nano-mask... | 07/04/2006 |
