Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 8076781 | Semiconductor device and manufacturing method of the same A conventional semiconductor device has a problem that reduction of a connection resistance value between wiring layers is difficult because of an oxide film formed between the wiring layers. In a semiconductor device of this invention, a first metal layer is embede... | 12/13/2011 |
| 7960835 | Fabrication of metal film stacks having improved bottom critical dimension A method of fabricating metal film stacks is described that reduces or eliminates adverse effects of photolithographic misalignments. A bottom critical dimension is increased by removal of a bottom titanium nitride barrier. ... | 06/14/2011 |
| 7755198 | Al-Ni-based alloy wiring material and element structure using the same The present invention provides Al—Ni-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding t... | 07/13/2010 |
| 7741720 | Electronic device with wire bonds adhered between integrated circuits dies and printed circuit boards An electronic device that has an integrated circuit die with a plurality of contacts pads, a printed circuit board with a plurality of conductors corresponding to each of the contact pads respectively, wire bonds electrically connecting each of the contact pads to t... | 06/22/2010 |
| 7531904 | Al-Ni-B alloy wiring material and element structure using the same The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the... | 05/12/2009 |
| 7425765 | Zinc-aluminum solder alloy A high melting point solder alloy superior in oxidation resistance, in particular a solder alloy provided with both a high oxidation resistance and high melting point suitable for filling fine through holes of tens of microns in diameter and high aspect ratios and f... | 09/16/2008 |
| 7411219 | Uniform contact A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point contact material. A wide band-gap ... | 08/12/2008 |
| 7355271 | Flexible assembly of stacked chips A three-dimensional package consisting of a plurality of folded integrated circuit chips (100, 110, 120) is described wherein at least one chip provides interconnect pathways for electrical connection to additional chips of the stack, and at least one chip ( | 04/08/2008 |
| 7314781 | Device packages having stable wirebonds A method of making a packaged electrical device comprises the steps of (a) connecting one end of a wire to a first point (e.g., a first electrical node) in the package, and (b) connecting the other end of the wire to a second point (e.g., a second electrical node) i... | 01/01/2008 |
| 7310458 | Stacked module systems and methods The present invention provides methods for constructing stacked circuit modules and precursor assemblies with flexible circuitry. Using the methods of the present invention, a single set of flexible circuitry whether articulated as one or two flex circuits may be em... | 12/18/2007 |
| 7268481 | Field emission display with smooth aluminum film This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks... | 09/11/2007 |
| 7247882 | Display device There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second g... | 07/24/2007 |
| 7247552 | Integrated circuit having structural support for a flip-chip interconnect pad and method therefor A technique for alleviating the problems of defects caused by stress applied to bond pads (32) includes, prior to actually making an integrated circuit (10), adding dummy metal lines (74, 76) to interconnect layers (18, 22, 26) to increas... | 07/24/2007 |
| 7242098 | Barrier film integrity on porous low k dielectrics by application of a hydrocarbon plasma treatment A method for treating a dielectric material using hydrocarbon plasma is described, which allows for thinner films of barrier material to be used to form a robust barrier. ... | 07/10/2007 |
| 7235844 | Power composite integrated semiconductor device and manufacturing method thereof A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper... | 06/26/2007 |
| 7235310 | Hillock-free aluminum layer and method of forming the same A hillock-free conductive layer comprising at least two aluminum (Al) layers formed on a substrate, wherein said at least two Al layers comprise a barrier Al layer formed on the substrate, and a pure Al layer formed on the barrier Al layer. The barrier Al layer coul... | 06/26/2007 |
| 7224065 | Contact/via force fill techniques and resulting structures An improved method of forming a semiconductor device structure is disclosed, comprising insertion of a semiconductor wafer into a high-pressure heated chamber and the deposition of a low melting-point aluminum material into a contact hole or via and over an insulati... | 05/29/2007 |
| 7217661 | Small grain size, conformal aluminum interconnects and method for their formation A first layer of titanium nitride (TiN) is formed on a semiconductor structure, such as an interconnect via. Then, a second layer of TiN is formed on the first layer of TiN. The first layer of TiN is amorphous. The second layer of TiN is polycrystalline, having a mi... | 05/15/2007 |
| 7215029 | Multilayer interconnection structure of a semiconductor In order to solve the aforementioned problems, the present-invention provides a semiconductor device having a multilayer interconnection structure, wherein an upper interconnection comprises a first metal layer composed of an aluminum alloy, which is formed over a l... | 05/08/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7202497 | Semiconductor device A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically c... | 04/10/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7193326 | Mold type semiconductor device A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of s... | 03/20/2007 |
| 7192827 | Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 03/20/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7166921 | Aluminum alloy film for wiring and sputter target material for forming the film Disclosed is an Al alloy film for wiring, which consists of, by atom, 0.2 to 1.5% Ge and 0.2 to 2.5% Ni and the balance being essentially Al, wherein a total amount of Ge and Ni is not more than 3.0%. The invention is also directed to a sputter target material havin... | 01/23/2007 |
| 7157761 | Capacitor with noble metal pattern An intermediate product for an integrated circuit is disclosed. The intermediate product comprises a first portion of a conductive layer, preferably a layer of noble metal, which will form an upper electrode of a capacitor or a patterned wiring. The intermediate pro... | 01/02/2007 |
| 7154180 | Electronic device, method of manufacture of the same, and sputtering target In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film ... | 12/26/2006 |
| 7141861 | Semiconductor device and manufacturing method there A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR characteristics of a Schottky barrier diode are in a trade-off relationship is her... | 11/28/2006 |
| 7138688 | Doping method and semiconductor device fabricated using the method A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semicond... | 11/21/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7129582 | Reducing the migration of grain boundaries A method of forming a semiconductor device includes implanting a precipitate into a gate conductor of an at least partially formed semiconductor device. The gate conductor including a plurality of semiconductor grains. The boundaries of adjacent grains forming a dop... | 10/31/2006 |
| 7126205 | Devices having improved capacitance and methods of their fabrication A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 10/24/2006 |
| 7119418 | Supercritical fluid-assisted deposition of materials on semiconductor substrates Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be... | 10/10/2006 |
| 7115986 | Flexible ball grid array chip scale packages A method and apparatus for increasing the integrated circuit density in a semiconductor assembly. The assembly includes a flexible interposer substrate attached to an active surface and a back side of a first die, the interposer substrate wrapping around at least on... | 10/03/2006 |
| 7112863 | Optical device, optical module, semiconductor apparatus and its manufacturing method, and electronic apparatus The invention provides an optical device that enables a mutual electrical connection between the stacked semiconductor substrates to be realized with ease and high reliability and to provide for miniaturization. The optical device has a first semiconductor substrate... | 09/26/2006 |
| 7098539 | Electronic device, method of manufacture of the same, and sputtering target In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film ... | 08/29/2006 |
| 7094632 | Low profile chip scale stacking system and method The present invention stacks chip scale-packaged integrated circuits (CSPs) into low profile modules that conserve PWB or other board surface area. Low profile structures provide connection between CSPs of the stacked module and between and to the flex circuitry. Lo... | 08/22/2006 |
| 7078733 | Aluminum alloyed layered structure for an optical device A layered structure of wire(s) comprising a wiring layer made of a low resistance metal containing aluminum, copper or silver; and an alloy layer made of an intermediate phase containing the low resistance metal and a refractory metal. The refractory metal is molybd... | 07/18/2006 |
| 7071563 | Barrier layer for interconnect structures of a semiconductor wafer and method for depositing the barrier layer An interconnect structure of a semiconductor device includes a tungsten plug (14) deposited in a via or contact window (11). A barrier layer (15) separates the tungsten plug (14) from the surface of a dielectric material (16) withi... | 07/04/2006 |
