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| Number | Title | Issue Date |
| 8188482 | SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method One aspect includes a semiconductor device with self-aligned contacts, integrated circuit and manufacturing method. One embodiment provides gate control structures. Each of the gate control structures is configured to control the conductivity of a channel region wit... | 05/29/2012 |
| 8188483 | Silicon carbide devices having smooth channels Power devices are provided including a p-type conductivity well region and a buried p+ conductivity region in the p-type conductivity well region. An n+ conductivity region is provided on the buried p+ conductivity region. A channel ... | 05/29/2012 |
| 8188484 | Semiconductor device The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity r... | 05/29/2012 |
| 8183573 | Process for forming an interface between silicon carbide and silicon oxide with low density of states An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially gro... | 05/22/2012 |
| 8174024 | Gallium nitride device with a diamond layer In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer, and a second diamond layer having a first thermal conductivity and d... | 05/08/2012 |
| 8168985 | Semiconductor module including a switch and non-central diode A semiconductor module having one or more silicon carbide diode elements mounted on a switching element is provided in which the temperature rise is reduced by properly disposing each of the diode elements on the switching element, to thereby provide a thermal dissi... | 05/01/2012 |
| 8164100 | Semiconductor device and method of manufacturing thereof A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate.... | 04/24/2012 |
| 8154027 | Silicon carbide substrate, epitaxial wafer and manufacturing method of silicon carbide substrate An SiC substrate includes the steps of preparing a base substrate having a main surface and made of SiC, washing the main surface using a first alkaline solution, and washing the main surface using a second alkaline solution after the step of washing with the first ... | 04/10/2012 |
| 8154028 | Infrared external photoemissive detector An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; and the p-layer is a p-type d... | 04/10/2012 |
| 8154026 | Silicon carbide bipolar semiconductor device In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the fo... | 04/10/2012 |
| 8138504 | Silicon carbide semiconductor device and method of manufacturing the same A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth layer on a 4H—SiC substrate, and an extended terrace surface is formed... | 03/20/2012 |
| 8134159 | Semiconductor device including a p-type transistor having extension regions in sours and drain regions and method of fabricating the same A semiconductor device according to one embodiment includes: a semiconductor layer formed on a semiconductor substrate; a gate electrode formed on the semiconductor layer via a gate insulating film; an impurity diffusion suppression layer formed between the semicond... | 03/13/2012 |
| 8124983 | Power transistor A power transistor includes a first terminal, a second terminal and a control terminal. A support layer is formed of a first material having a first bandgap. An active region is formed of a second material having a second bandgap wider than the first bandgap, and is... | 02/28/2012 |
| 8124984 | Semiconductor multilayer structure on an off-cut semiconductor substrate A semiconductor device is fabricated on an off-cut semiconductor substrate 11. Each unit cell 10 thereof includes: a first semiconductor layer 12 on the surface of the substrate 11; a second semiconductor layer 16 stacked on the fi... | 02/28/2012 |
| 8115211 | Silicon carbide semiconductor device and manufacturing method thereof An objective is to provide a manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be ensured, and by the manufacturing method increase of the manufacturing c... | 02/14/2012 |
| 8093598 | Power semiconductor device A power semiconductor device less prone to cause a reaction between a metal material for interconnection and an electrode or the like connected to a semiconductor region during the high-temperature operation thereof and less prone to be strained during the high-temp... | 01/10/2012 |
| 8093599 | Silicon carbide Zener diode A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a sil... | 01/10/2012 |
| 8084773 | Semiconductor-on-diamond devices and associated methods Semiconductor-on-diamond (SOD) substrates and methods for making such substrates are provided. In one aspect, a method of making an SOD substrate may include depositing a base layer onto a lattice-orienting silicon (Si) substrate such that the base layer lattice is ... | 12/27/2011 |
| 8080826 | High performance active and passive structures based on silicon material bonded to silicon carbide The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bo... | 12/20/2011 |
| 8067776 | Method of manufacturing semiconductor device and semiconductor device manufactured thereof Methods of manufacturing a semiconductor device including a semiconductor substrate and a hetero semiconductor region including a semiconductor material having a band gap different from that of the semiconductor substrate and contacting a portion of a first surface ... | 11/29/2011 |
| 8058655 | Vertical junction field effect transistors having sloped sidewalls and methods of making Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs). The devices have raised regions with sloped sidewalls which taper inward. The sidewalls can form an angle of 5° or more from vertica... | 11/15/2011 |
| 8053784 | Silicon carbide semiconductor device and method for manufacturing the same A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift lay... | 11/08/2011 |
| 8053783 | Switching device A high voltage diamond based switching device capable of sustaining high currents in the on state with a relatively low impedance and a relatively low optical switching flux, and capable of being switched off in the presence of the high voltage being switched. The d... | 11/08/2011 |
| 8053785 | Tunneling field effect transistor switch device A tunneling field effect transistor (TFET) device includes a semiconductor substrate having a layer of relatively intermediate bandgap semiconductor material, a layer of relatively low bandgap semiconductor material overlying the layer of relatively intermediate ban... | 11/08/2011 |
| 8049223 | Semiconductor device with large blocking voltage A junction FET having a large gate noise margin is provided. The junction FET comprises an n− layer forming a drift region of the junction FET formed over a main surface of an n+ substrate made of silicon carbide, a p+ layer formin... | 11/01/2011 |
| 8049224 | Process for transferring a layer of strained semiconductor material Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained s... | 11/01/2011 |
| 8044408 | SiC single-crystal substrate and method of producing SiC single-crystal substrate The invention provides a high-quality SiC single-crystal substrate, a seed crystal for producing the high-quality SiC single-crystal substrate, and a method of producing the high-quality SiC single-crystal substrate, which enable improvement of device yield and stab... | 10/25/2011 |
| 8039845 | Methods for coupling diamond structures to photonic devices Various embodiments of the present invention are directed to methods for coupling semiconductor-based photonic devices to diamond. In one embodiment of the present invention, a photonic device is optically coupled with a diamond structure. The photonic device compri... | 10/18/2011 |
| 8035112 | SIC power DMOSFET with self-aligned source contact An intermediate product in the fabrication of a MOSFET, including a silicon carbide wafer having a substrate and a drift layer on said substrate, said drift layer having a plurality of source regions formed adjacent an upper surface thereof; a first oxide layer on s... | 10/11/2011 |
| 8030662 | Semiconductor memory device There is offered a switching resistance RAM that is very much reduced in an occupied area and is highly integrated. Memory cells CEL11-CEL14 are formed corresponding to four intersections of word lines WL0 and WL1 and bit lines BL0... | 10/04/2011 |
| 8030661 | Power conversion apparatus In the case where a chip is made of wide band gap semiconductor, a power conversion apparatus is obtained in which a component having a low heat resistant temperature is prevented from receiving thermal damage by heat generated at the chip. In a configuration includ... | 10/04/2011 |
| 8026523 | Nitride semiconductor free-standing substrate and device using the same A nitride semiconductor free-standing substrate includes a surface inclined in a range of 0.03° to 1.0° from a C-plane, and an off-orientation that an angle defined between a C-axis and a tangent at each point on a whole surface of the substrate becomes maximum is... | 09/27/2011 |
| 8022414 | Silicon carbide semiconductor device, and method of manufacturing the same The silicon carbide semiconductor device includes a trench formed from a surface of a drift layer of a first conductivity type formed on a substrate of the first conductivity type, and a deep layer of a second conductivity type located at a position in the drift lay... | 09/20/2011 |
| 8013343 | Silicon carbide single crystal, silicon carbide substrate and manufacturing method for silicon carbide single crystal SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no ... | 09/06/2011 |
| 8008669 | Programmable anti-fuse structure with DLC dielectric layer In one embodiment an anti-fuse structure is provided that includes a first dielectric material having at least a first anti-fuse region and a second anti-fuse region, wherein at least one of the anti-fuse regions includes a conductive region embedded within the firs... | 08/30/2011 |
| 8003991 | Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-ty... | 08/23/2011 |
| 7999268 | Low temperature impurity doping of silicon carbide The method described herein enables the introduction of external impurities into Silicon Carbide (SiC) to be conducted at a temperature between 1150-1400° C. Advantages include: a) low temperature diffusion procedure with greater control of the doping process, b) p... | 08/16/2011 |
| 7994513 | Silicon carbide semiconductor device including deep layer A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift ... | 08/09/2011 |
| 7985970 | High voltage low current surface-emitting LED A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconn... | 07/26/2011 |
| 7982224 | Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration A semiconductor device includes: a semiconductor substrate of silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type, which has been grown on the principal surface of the substrate; well regions of a second con... | 07/19/2011 |
