Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 7868329 | Semiconductor device and method for fabricating the same A semiconductor device, comprising a substrate, a semiconductive layer and a gate electrode is provided. The semiconductive layer having a crystallization promoting material is formed over the substrate. The semiconductive layer has a channel region, a first doped r... | 01/11/2011 |
| 7649206 | Sequential lateral solidification mask A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in whi... | 01/19/2010 |
| 7635866 | Semiconductor device and its manufacturing method Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temper... | 12/22/2009 |
| 7557376 | Display device using first and second semiconductor films of different crystallinity and boundary section therebetween The present invention provides an active matrix display device capable of raising its integration density by reducing the drive circuit area on the active matrix substrate. A semiconductor film presents in the boundary between a quasi-strip crystalline semiconductor... | 07/07/2009 |
| 7420628 | Method of making an active-type LCD with digitally graded display An electro-optical device comprising a display drive system with the display timing related to the unit time t for writing-in a picture element and to the time F for writing-in one picture is disclosed. In the device, a gradated display corresponding to the ratio of... | 09/02/2008 |
| 7372073 | Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals... | 05/13/2008 |
| 7361577 | Method of manufacturing semiconductor device In a step of doping a silicon-based semiconductor film as a TFT active layer such as channel doping or the like, a protective film is formed by a CVD method as a pretreatment so as to prevent the silicon-based semiconductor film from being contaminated and etched. H... | 04/22/2008 |
| 7348221 | Process for manufacturing a semiconductor device, a semiconductor device and a high-frequency circuit A process for manufacturing a semiconductor device, provides that a silicide layer is formed, an amorphous semiconductor layer is applied both to the silicide layer and to an open monocrystalline semiconductor region, adjacent to the silicide layer, and during a sub... | 03/25/2008 |
| 7348598 | Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for... | 03/25/2008 |
| 7335916 | Electrode structure, and semiconductor light-emitting device having the same A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a... | 02/26/2008 |
| 7317207 | Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T... | 01/08/2008 |
| 7317245 | Method for manufacturing a semiconductor device substrate Disclosed is a method for manufacturing a semiconductor device substrate. A substrate having no bus line and lead-in line is efficiently manufactured. In a step needing an electroplating process, conductive film is temporarily attached to circuit patterns in order t... | 01/08/2008 |
| 7312471 | Liquid crystal display device having drive circuit and fabricating method thereof A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etc... | 12/25/2007 |
| 7309900 | Thin-film transistor formed on insulating substrate There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasi... | 12/18/2007 |
| 7297978 | Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} o... | 11/20/2007 |
| 7294857 | Polysilicon thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: depositing an amorphous silicon layer on an insulating substrate; converting the amorphous silicon layer to a polysilicon layer by a plurality of laser shots using a mask; form... | 11/13/2007 |
| 7288787 | Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a sou... | 10/30/2007 |
| 7272068 | Semiconductor device A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current. ... | 09/18/2007 |
| 7268384 | Semiconductor substrate having first and second pairs of word lines The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative material over the bit node. Sac... | 09/11/2007 |
| 7268030 | Methods of forming semiconductor constructions Thin film transistor based three-dimensional CMOS inverters utilizing a common gate bridged between a PFET device and an NFET device. One or both of the NFET and PFET devices can have an active region extending into both a strained crystalline lattice and a relaxed ... | 09/11/2007 |
| 7238963 | Self-aligned LDD thin-film transistor and method of fabricating the same A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer includes a material t... | 07/03/2007 |
| 7232716 | Display device and method for manufacturing the same The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum va... | 06/19/2007 |
| 7217952 | Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, aft... | 05/15/2007 |
| 7208763 | Semiconductor device In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver opera... | 04/24/2007 |
| 7202499 | Semiconductor device including two transistors and capacitive part An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is made from crystalline semiconduc... | 04/10/2007 |
| 7183571 | Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication ... | 02/27/2007 |
| 7176479 | Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire substrate; a second single crys... | 02/13/2007 |
| 7166861 | Thin-film transistor and method for manufacturing the same The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film transistor with a larger area, and... | 01/23/2007 |
| 7164152 | Laser-irradiated thin films having variable thickness A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The first film thickness is greater... | 01/16/2007 |
| 7148507 | Semiconductor device having thin film transistor with position controlled channel formation region A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowerin... | 12/12/2006 |
| 7148510 | Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from esca... | 12/12/2006 |
| 7132343 | Method and apparatus for manufacturing display panel The whole surface of an insulating substrate having an amorphous silicon film formed thereon is scanned/irradiated with a solid-state pulsed laser beam shaped linearly or rectangularly, to form a uniform fine poly-crystalline silicon film for forming a pixel region.... | 11/07/2006 |
| 7132686 | Semiconductor device and method of fabricating the same In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor devi... | 11/07/2006 |
| 7129522 | Semiconductor device and its manufacturing method Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is crystallized by laser, a temper... | 10/31/2006 |
| 7129153 | Process for forming polycrystalline silicon layer by laser crystallization A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiate... | 10/31/2006 |
| 7119365 | Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form the polycrystalline Si... | 10/10/2006 |
| 7115903 | Semiconductor device and semiconductor device producing system An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively formed in the semiconductor film. ... | 10/03/2006 |
| 7115456 | Sequential lateral solidification device and method of crystallizing silicon using the same A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed i... | 10/03/2006 |
| 7091519 | Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals... | 08/15/2006 |
| 7045880 | Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Improved methods and structures are provided that are lateral to surfaces with a (110) crystal plane orientation such that an electrical current of such structures is conducted in the direction. Advantageously, improvements in hole carrier mobility of approxim... | 05/16/2006 |
