Class 257/69 - Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter wherein there is a field effect transistor
No. of patents: 382
Last issue date: 04/24/2012

«First «Previous1 2 3 4 5 6 7 8 9 10 Next»Last»

Number	Title	Issue Date
8164095	Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer It is an object to provide a semiconductor device which has a large size and operates at high speed. A top gate transistor which includes a semiconductor layer of single-crystal and a bottom gate transistor which includes a semiconductor layer of amorphous silicon (...	04/24/2012
8124977	Localized compressive strained semiconductor One aspect of the present subject matter relates to a method for forming strained semiconductor film. According to an embodiment of the method, a crystalline semiconductor bridge is formed over a substrate. The bridge has a first portion bonded to the substrate, a s...	02/28/2012
8124976	Semiconductor device and method of manufacturing the same The present invention provides a semiconductor device including SRAM cell units each including a data holding section made up of a pair of driving transistors and a pair of load transistors, a data write section made up of a pair of access transistors, and a data re...	02/28/2012
8044403	Display device An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconduc...	10/25/2011
8035106	Electronic device, constituted by using thin-film transistors An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconduc...	10/11/2011
8035105	Solid state image pickup device and method of producing solid state image pickup device Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for t...	10/11/2011
7964873	Thin film transistor array panel and manufacturing method thereof A thin film transistor array panel is provided, which includes: a substrate; a first polysilicon member that is formed on the substrate and includes an intrinsic region, at least one first extrinsic region, and at least one second extrinsic region disposed between t...	06/21/2011
7893437	Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same are disclosed. An example semiconductor device includes a semiconductor substrate having a first well, a first source electrode, a drain electrode, and a first gate insulation layer formed on the semiconduc...	02/22/2011
7821008	Semiconductor device and manufacturing method thereof A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ...	10/26/2010
7808001	Method for fabricating semiconductor device and semiconductor device An n-channel MOS transistor and a p-channel MOS transistor are formed on a semiconductor substrate 100. The p-channel MOS transistor includes a gate electrode 102a, a first offset sidewall 103a formed on side surfaces of the gate e...	10/05/2010
7791077	Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconduc...	09/07/2010
7755089	Semiconductor device including complementary MOS transistor having a strained Si channel A semiconductor device includes a semiconductor substrate, p-type first and n-type second semiconductor regions formed on the substrate so as to be insulated with each other, n-channel and p-channel MOS transistors formed on the first and second semiconductor region...	07/13/2010
7755090	Solid state image pickup device and method of producing solid state image pickup device Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for t...	07/13/2010
7696517	NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric Transistors having a Hafnium-Silicon gate electrode and high-k dielectric are disclosed. A workpiece is provided having a gate dielectric formed over the workpiece, and a gate formed over the gate dielectric. The gate may comprise a layer of a combination of Hf and ...	04/13/2010
7683374	Silicon based photodetector A method of fabricating a photodetector device includes preparing a silicon substrate, forming a patterned mesa on the silicon substrate, and forming a patterned conductive layer over the patterned mesa. ...	03/23/2010
7638805	Method of fabricating a semiconductor device A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {11...	12/29/2009
7619253	Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, to obtain a crystalline semiconduct...	11/17/2009
7619252	Integrated circuit having a predefined dielectric strength An integrated circuit having a first connection, a second connection, a substrate, and a control connection, in provided. The control connection controls a conductivity of the integrated circuit between the first connection and the second connection. The integrated ...	11/17/2009
7589349	CMOS image sensor with asymmetric well structure of source follower Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having one terminal connected to a power voltage and a first gate electrode...	09/15/2009
7569857	Dual crystal orientation circuit devices on the same substrate Embodiments of the invention provide a substrate with a device layer having different crystal orientations in different portions or areas. One layer of material having one crystal orientation may be bonded to a substrate having another crystal orientation. Then, a p...	08/04/2009
7521715	Node contact structures in semiconductor devices A static random-access memory (SRAM) device may include a bulk MOS transistor on a semiconductor substrate having a source/drain region therein, an insulating layer on the bulk MOS transistor, and a thin-film transistor having a source/drain region therein on the in...	04/21/2009
7439542	Hybrid orientation CMOS with partial insulation process The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, junction capacitance of one of t...	10/21/2008
7427799	Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ...	09/23/2008
7417253	Semiconductor device and manufacturing method therefor An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions incr...	08/26/2008
7411215	Display device and method of fabricating the same To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes conn...	08/12/2008
7400004	Isolation structures for preventing photons and carriers from reaching active areas and methods of formation Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure prevents photons and electro...	07/15/2008
7391054	Semiconductor device and manufacturing method thereof The active layer of an n-channel TFT is formed with a channel forming region, a first impurity region, a second impurity region and a third impurity region. In this case, the concentration of the impurities in each of the impurity regions is made higher as the regio...	06/24/2008
7387919	Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter In one embodiment, an intrinsic single crystalline semiconductor plug is formed to pass through a lower insulating layer using a selective epitaxial growth process employing a node impurity region as a seed layer, and a single crystalline semiconductor body pattern ...	06/17/2008
7381990	Thin film transistor with multiple gates fabricated using super grain silicon crystallization A thin film transistor with multiple gates is fabricated using a super grain silicon (SGS) crystallization process. The thin film transistor a semiconductor layer formed in a zigzag shape on an insulating substrate, and a gate electrode intersecting with the semicon...	06/03/2008
7368337	Semiconductor device and manufacturing method thereof A semiconductor device and method of manufacturing the same are disclosed. An example semiconductor device includes a semiconductor substrate having a first well, a first source electrode, a drain electrode, and a first gate insulation layer formed on the semiconduc...	05/06/2008
7351617	Semiconductor device and a method of manufacturing the same To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insula...	04/01/2008
7348598	Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT includes a gate electrode for...	03/25/2008
7348224	Method for manufacturing thin film transistor, electro-optical device and electronic apparatus A method for manufacturing a thin film transistor results in a thin film transistor including a semiconductor film, a channel region provided in the semiconductor film, source and drain regions sandwiching the channel region, and a gate electrode facing the channel ...	03/25/2008
7335580	Lamellar-derived microelectronic component array and method of fabrication Sub-lithographic lamella and pillar structures defined by larger lines or lamellae are described. A static random access memory (SRAM) cell structure is created in a three-dimensional format as a vertical stack of wired transistors. These transistors are fabricated ...	02/26/2008
7332385	Method of manufacturing a semiconductor device that includes gettering regions A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline ...	02/19/2008
7329923	High-performance CMOS devices on hybrid crystal oriented substrates An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device is formed upon a second different crystallographic surface that is optimal for the other device is...	02/12/2008
7317207	Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A T...	01/08/2008
7315063	CMOS transistor and method of manufacturing the same A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. T...	01/01/2008
7304325	Group III nitride compound semiconductor light-emitting device A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed ...	12/04/2007
7297978	Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} o...	11/20/2007

«First «Previous1 2 3 4 5 6 7 8 9 10 Next»Last»

PatentStorm

Bizarre Patents

PatentStorm News

Class 257/69 - Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS)