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Class 257/662 - Transmission line or shielded


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: Subject matter under 661 in which the superconductive electrical
No. of patents: 136
Last issue date: 05/01/2012


1        
NumberTitleIssue Date
8169060Integrated circuit package assembly including wave guide
Some embodiments herein relate to a transmitter. The transmitter includes an integrated circuit (IC) package including a first antenna configured to radiate a first electromagnetic signal therefrom. A printed circuit board (PCB) substrate includes a waveguide config...
05/01/2012
8106488Wafer level packaging
Through vias in a substrate are formed by creating a trench in a top side of the substrate and at least one trench in the back side of the substrate. The sum of the depths of the trenches at least equals the height of the substrate. The trenches cross at intersectio...
01/31/2012
8026579Silicon pillars for vertical transistors
In order to form a more stable silicon pillar which can be used for the formation of vertical transistors in DRAM cells, a multi-step masking process is used. In a preferred embodiment, an oxide layer and a nitride layer are used as masks to define trenches, pillars...
09/27/2011
7737536Capacitive techniques to reduce noise in high speed interconnections
Structures, in various embodiments, are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. In an embodiment, a transmission line is disposed on a first layer of insulating material, where the fir...
06/15/2010
7602049Capacitive techniques to reduce noise in high speed interconnections
Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. Embodiments of an electronic device having a transmission line circuit include a first layer of electrically...
10/13/2009
7514766Semiconductor device
A semiconductor device in which the threshold voltage of transistors is controlled through the applied substrate bias and having relatively small size. The semiconductor device includes: a clock signal line; a shield wiring for shielding the clock signal line from a...
04/07/2009
7449769Superconducting system, superconducting circuit chip, and high-temperature superconducting junction device with a shunt resistor
A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having Josephson junctions formed by...
11/11/2008
7411279Component interconnect with substrate shielding
An example of a circuit structure may include a first dielectric layer having first and second surfaces, and a channel extending at least partially between the first and second surfaces and along a length of the first dielectric layer. First and second conductive la...
08/12/2008
7411277Semiconductor integrated circuit having shield wiring
A shield wiring is provided on a boundary of a target region to be shielded of macros, an inner side of the boundary, an outer side of the boundary, or an inner side and an outer side of the boundary, each being as a black box, so as to surround the target region. T...
08/12/2008
7391637Semiconductor memory device with high permeability composite films to reduce noise in high speed interconnects
A memory device is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating materia...
06/24/2008
7375414High permeability layered films to reduce noise in high speed interconnects
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conduc...
05/20/2008
7361975Semiconductor integrated circuit having reduced cross-talk noise
A semiconductor integrated circuit, includes a shielded wire line and a shielding wire line provided for the shielded wire line and divided into a plurality of segments in a longitudinal direction of the shielded wire line. ...
04/22/2008
7335968High permeability composite films to reduce noise in high speed interconnects
A transmission line circuit provides a structure for improved transmission line operation on integrated circuits. The transmission line circuit includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed ...
02/26/2008
7327016High permeability composite films to reduce noise in high speed interconnects
An electronic system is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating ma...
02/05/2008
7323771Electronic circuit device
An electronic circuit device has a high-density mount board (2), on which are disposed a microcomputer (3) and random access memory (7) which are connected to each other through an exclusive memory bus (12) for high-speed data transfer, a...
01/29/2008
7321145Method and apparatus for operating nonvolatile memory cells with modified band structure
A nonvolatile memory cell with a charge storage structure is read by measuring current (such as band-to-band current) between the substrate region of the memory cell and at least one of the current carrying nodes of the memory cell. To enhance the operation of the n...
01/22/2008
7294906Wiring technique
An apparatus for supplying electrical power to a movable member. The apparatus includes a fixed member, the movable member moving relative to the fixed member, a flexible wiring member having an end connected to the movable member and another end connected to the fi...
11/13/2007
7279778Semiconductor package having a high-speed signal input/output terminal
A semiconductor package including a flexible tape having a mounting portion and an extended portion, a plurality of arrayed connection electrodes provided on the mounting portion of the flexible tape, and a semiconductor chip mounted on the mounting portion of the f...
10/09/2007
7265438RF seal ring structure
Described is a method where a seal ring is formed by stacking interconnected conductive layers along the perimeter of an integrated circuit (IC). The seal ring is formed continuously around the IC perimeter using a conductive chain with two distinct widths. Each sec...
09/04/2007
7239002Integrated circuit device
In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An ...
07/03/2007
7230319Electronic substrate
A substrate for mounting a device is disclosed. The substrate includes at least one transition for providing an RF connection to a lead of the device, the lead extending from a device input to an otherwise free end. The transition comprises two spaced apart electric...
06/12/2007
7221586Memory utilizing oxide nanolaminates
Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region b...
05/22/2007
7221017Memory utilizing oxide-conductor nanolaminates
Structures, systems and methods for floating gate transistors utilizing oxide-conductor nanolaminates are provided. One floating gate transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A float...
05/22/2007
7214586Methods of fabricating nonvolatile memory device
A method of fabricating nonvolatile memory devices. The method includes forming a tunnel oxide layer, a stacked oxide layer, a polysilicon layer for a control gate, a buffer oxide layer and a buffer nitride layer in order on the entire surface of a semiconductor sub...
05/08/2007
7211887connection arrangement for micro lead frame plastic packages
A connection arrangement for a micro lead frame plastic (MLP) package is provided that includes a paddle configured to be connected to a circuit board and a first ground pad and a second ground pad each connected to the paddle. The first and second ground pads toget...
05/01/2007
7196387Memory cell with an asymmetrical area
An asymmetric-area memory cell, and a fabrication method for forming an asymmetric-area memory cell, are provided. The method comprises: forming a bottom electrode having an area; forming a CMR memory film overlying the bottom electrode, having an asymmetric area; a...
03/27/2007
7193893Write once read only memory employing floating gates
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...
03/20/2007
7190053Field device incorporating circuit card assembly as environmental and EMI/RFI shield
A field hardened industrial device is described with a housing of the device having electrically conductive walls surrounding a cavity with an open end. An electronics assembly is adapted to fit within the cavity. The device includes a circuit card assembly, which i...
03/13/2007
7187061Use of a down-bond as a controlled inductor in integrated circuit applications
A Radio Frequency (RF) device includes a semi conductive die and a package in which the semi conductive die mounts. The semi conductive die includes a first portion of an RF circuit and a plurality of die pads formed thereon. The package includes a heat slug upon wh...
03/06/2007
7170300Apparatus and method for inspecting interface between ground layer and substrate of microstrip by using scattering parameters
An apparatus and method for detecting a defect on a ground layer of microstrip by using scattering parameters is disclosed. The apparatus includes: a providing unit for providing a signal to the microstrip by changing a frequency of the signal in a predetermined ran...
01/30/2007
7166509Write once read only memory with large work function floating gates
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...
01/23/2007
7154140Write once read only memory with large work function floating gates
Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra...
12/26/2006
7149666Methods for modeling interactions between massively coupled multiple vias in multilayered electronic packaging structures
Analyzing interactions between vias in multilayered electronic packages that include at least two spaced-apart conducting planes, and multiple vias that connect signal traces on different layers. Voltages at active via ports are represented as magnetic ring current ...
12/12/2006
7135717Semiconductor switches and switching circuits for microwave
The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes ...
11/14/2006
7122881Wiring board and circuit module
A wiring board houses a bare radio-frequency IC. Shield wiring films are provided above and below the IC. A plurality of shield interlayer-connection conductor films, i.e., shield via-holes, is provided so as to surround the IC. The shield wiring films and the shiel...
10/17/2006
7112870Semiconductor integrated circuit device including dummy patterns located to reduce dishing
A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region where th...
09/26/2006
7112494Write once read only memory employing charge trapping in insulators
Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor having a first source/drain region, a second source/drain r...
09/26/2006
7109569Dual referenced microstrip
Structures and methods are provided for dual referenced microstrip structures having low reference discontinuities between a microstrip trace referenced to a primary reference plane as compared to a microstrip trace referenced to a secondary reference plane. A metho...
09/19/2006
7087983Manufacturing methods of semiconductor devices and a solid state image pickup device
A manufacturing method of manufacturing a semiconductor device having a plurality of wiring layers. The method includes the steps of forming a wiring by a first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divi...
08/08/2006
7075171Superconducting system, superconducting circuit chip, and high-temperature superconducting junction device with a shunt resistor
A superconducting system that includes an interface circuit capable of making the best use of a high-speed superconducting circuit and a high-speed semiconductor circuit. A multi-chip module in which an Nb superconducting circuit having josephson junctions formed by...
07/11/2006
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